In order to examine the dielectric properties of the Au/B1/p-Si, Au/B2/p-Si, Au/B3/p-Si and Au/B4/p-Si structures, BODIPY dye-based organic layers was coated as a thin film between the metal-semiconductor as the interface. Electrical conductivity, real and imaginary parts of the electrical module, dielectric loss and dielectric constant parameters were calculated in the frequency range of 100–1000 kHz at room temperature. The effect of frequency on dielectric constant and dielectric loss values was not regular in forward bias for Au/B1/p-Si and Au/B2/p-Si at low frequency, but was consistent with frequency for Au/B3/p-Si and Au/B4/p-Si. Dielectric parameters generally behaved as functions of voltage and frequency. The changes in the frequency-dependent electrical modulus were attributed to the relaxation process, polarization, and surface conditions.