Abstract
Frequency dependent capacitance (C) and conductance (G/ω) data for Au/n-Si structures fabricated at room temperature without interlayers and with 5 nm and 10 nm aluminium-oxide (Al2O3) interlayer thicknesses are investigated. The Al2O3 interlayers were deposited by atomic layer deposition. Data on the complex electric modulus (M*) and alternating current electrical conductivity (σac) values are acquired for the three structures in the 3 kHz-3 MHz frequency range between (-3 V) – (+5 V) bias interval and compared. It was observed that the C and G/ω values decreased with the increase in frequency and interlayer thickness and that the frequency increases as a result of polarization which also increases M*, especially in 5 nm and 10 nm interlayered structures. Frequency and interlayer thickness increment have a positive impact by increasing σac, while conductivity has been shown to be highly sensitive to the presence of an interlayer and to its thickness.
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