Sensors and actuators constructed from freestanding tantalum thin films show promise for micromachining applications and for the study of thin film mechanical behavior. To assess this promise, it is necessary to gain further understanding of the performance of Ta as a structural material. We first evaluate the coefficient of thermal expansion, αTa, using micromachined bent beams, which amplify displacement compared to linear expansion. The value for αTa is 6.8 × 10−6 m/m °C, in good agreement with the bulk value. This validation enables the study of interstitial oxygen diffusion in Ta, for which literature values of activation energy vary widely, from 0.60 to 1.98 eV. Displacement in air due to oxygen diffusion becomes measurable after 30 min exposure at 180 °C. We extract an activation energy for interstitial oxygen in Ta of 0.53 eV/atom. Analysis indicates that lattice rather than grain boundary diffusion is the associated mechanism. To inhibit the oxidation, we construct a thermal stage that controls specimen temperature in 10−5 Pa vacuum. Then, after a 24 h hold, oxidation is suppressed up to 400 °C. This result is discussed in terms of O dissolution from its native oxide, coupled with further absorption from background gases.