Transport of particles in flows is often modeled in a combined Eulerian–Lagrangian framework. The flow is evaluated on an Eulerian grid, while particles are modeled as Lagrangian points whose positions and velocities are evolved in time, resulting in particle trajectories embedded in the time-dependent flow field. The method essentially resolves the flow field in complex geometries in detail but uses a closure model for the particle dynamics aimed at including the essential particle–fluid interactions at the cost of detailed small-scale physics. Rarefaction effects are usually included through the phenomenological Cunningham correction on the drag force experienced by the particles. In this Lagrangian point-particle approach, any explicit reference to the finite size and the shape of the particles, and their local orientation in the flow field, is typically ignored. In this work we aim to address this gap by deriving, from fully-resolved Direct Simulation Monte Carlo (DSMC) studies, heuristic or closure models for the drag force acting on prolate and oblate spheroidal particles with different aspect ratios, and a fixed orientation, in uniform ambient rarefied flows covering the transition regime between the continuum and free-molecular limits. These closure models predict the drag in the transition regime for all considered parameter settings (validated with DSMC data). The continuum limit is enforced a priori and we retrieve the free-molecular limit with reasonable accuracy (based on comparisons with literature data). We also include in the models the capability to predict effects related to basic gas-surface interactions via the tangential momentum accommodation coefficient. We furthermore assess the validity of the proposed closure model for particle dynamics in proximity to solid walls. This investigation extends our previous work, which focused on small aspect ratio spheroids with exclusively diffusive gas-surface interactions [see Livi et al. (2022)]. The derived models are obtained for isothermal, subsonic flows relevant for particle contamination control in semiconductor manufacturing.