Free Carriers Research Articles

Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity

We experimentally investigated the self-pulsing (SP) oscillations induced by the thermo-optic, free carrier, and Kerr nonlinear effects in integrated active silicon microring resonators. We demonstrate high frequency self-pulsing oscillations (up to 30 MHz) by applying a few millivolts of reverse bias voltage to the PIN junction of the active cavity. We illustrate that the shape of those oscillations (i.e., frequency and duty cycle) can be controlled by adjusting the CW input power and applying a reverse bias voltage to the PIN junction for carrier removal. This controlling is important for synchronizing the cavity which is crucial for neural network applications. Furthermore, we utilize a mathematical model for visualizing the stability regions by numerically studying coupled mode theory in silicon microcavity under different conditions.

Pulse length effects in the nonresonant long-wave infrared nonlinear optical response of n-Ge, GaAs, and ZnSe

Nonlinear optical refraction and nonlinear absorption are characterized in important long-wave infrared optical materials with picosecond and femtosecond laser pulses. The effective nonlinear refractive indices are found to be constant across a range of pulse parameters. Nonlinear absorption far from resonance is observed at relatively low (∼1GW/cm2) intensities in these materials, and the onset intensity and fluence scale strongly with pulse length. A free carrier dominated nonlinear absorption mechanism is identified for picosecond pulses, whereas nonperturbative photoionization causes femtosecond absorption.

Growth and performance of n++ GaN cap layer for HEMTs applications

Apart from providing high-quality ohmic contacts to III-N devices, n++ GaN cap layers can eliminate surface-related current collapse effects in high-electron-mobility transistors (HEMTs). Various metal-organic chemical vapor deposition conditions and n-type doping are tested in GaN growth on sapphire by using triethylgallium as a Ga precursor, replacing more conventional trimethylgallium. Consequently, despite relatively low temperature of the growth at 800 °C to facilitate InAlN barrier capping, optimized growth conditions and SiH4 flow provided free electron concentration of 7.2 × 1019 cm−3 and mobility of 103 cm2/Vs. Moreover, electron concentration in the range of 1020 cm−3 is demonstrated by using flow modulation epitaxy. On the other hand, as calibration growths indicated, excessive SiH4 flow alone can lead to high density of edge dislocations and surface undulations without enhancing free electron concentration. 6 nm (Si: 4.2 × 1019 cm−3) and 8 nm thick (Si: 7.2 × 1019 cm−3) n++ GaN cap is implemented in normally-off n++ GaN/InAlN/AlN/GaN HEMTs grown on Si, with a collapse-free performance for the latter case. By calculating energy band and free carrier concentration profiles of the heterostructures it is shown, that free electrons of a sufficiently thick and doped n++ GaN cap can shield the channel from the unstable surface potential.

High-harmonic generation by a bright squeezed vacuum

AbstractHigh-harmonic generation has been driving the development of attosecond science and sources. More recently, high-harmonic generation in solids has been adopted by other communities as a method to study material properties. However, so far high-harmonic generation has only been driven by classical light, despite theoretical proposals to do so with quantum states of light. Here we observe non-perturbative high-harmonic generation in solids driven by a macroscopic quantum state of light, a bright squeezed vacuum, which we generate in a single spatiotemporal mode. The process driven by a bright squeezed vacuum is considerably more efficient in the generation of high harmonics than classical light of the same mean intensity. Due to its broad photon-number distribution, covering states from 0 to 2 × 1013 photons per pulse, and strong subcycle electric field fluctuations, a bright squeezed vacuum gives access to free carrier dynamics within a much broader range of peak intensities than accessible with classical light.

Phonon-assisted Auger decay of excitons in doped transition metal dichalcogenide monolayers.

The competition between the radiative and nonradiative lifetimes determines the optical quantum yield and plays a crucial role in the potential optoelectronic applications of transition metal dichalcogenides (TMDCs). Here, we show that, in the presence of free carriers, an additional nonradiative decay channel opens for excitons in TMDC monolayers. Although the usual Auger decay channel is suppressed at low doping levels by the simultaneous momentum and energy conservation laws, exciton-phonon coupling relaxes this suppression. By solving a Bethe-Salpeter equation, we calculate the phonon-assisted Auger decay rates in four typical TMDCs as a function of doping, temperature, and dielectric environment. We find that even for a relatively low doping of 1012 cm-2, the nonradiative lifetime ranges from 16 to 165ps in different TMDCs, offering competition to the radiative decay channel.

Near-Unity All-Optical Modulation of Third-Harmonic Generation with a Fano-Resonant Dielectric Metasurface.

We demonstrate all-optical modulation with a near-unity contrast of nonlinear light generation in a dielectric metasurface. We study third-harmonic generation from silicon Fano-resonant metasurfaces excited by femtosecond pulses at 1480 nm wavelength. We modulate the metasurface resonance by free carrier excitation induced by absorption of an 800 nm pump pulse, leading to up to 93% suppression of third-harmonic generation. Modulation and recovery occur on (sub)picosecond time scales. According to the Drude model, the pump-induced refractive index change blue-shifts the metasurface resonance away from the generation pulse, causing a strong modulation of third-harmonic conversion efficiency. The principle holds great promise for spatiotemporal programmability of nonlinear light generation.

Nonlinear optical parameters and electronic properties of plasma polymerized methyl acrylate thin films

Plasma polymerized methyl acrylate (PPMA) thin films were fabricated on a borosilicate glass substrate at a plasma power of 28 W to study nonlinear optical parameters and electronic properties. X-ray Diffraction analysis confirmed the amorphous nature of the PPMA films, while Attenuated total reflectance Fourier transform infrared spectroscopy indicated monomer fragmentation due to plasma polymerization. Field emission scanning electron microscope images of the films display a water wave-like structure. PPMA films demonstrated thermal stability up to approximately 574 K in both N2 and air environments. The values of direct band gap energies increase from 3.30 to 3.41 eV with increasing film thicknesses, whereas the Urbach energy values show in an opposite manner. The Wemple-DiDomenico model was employed to analyze both the oscillator energies ranging from 5.54 to 6.44 eV and the dispersion energies ranging from 10.56 to 12.89 eV. The static linear refractive index showed typical dispersion behavior, with film thickness conforming to Moss's rule. The nonlinear refractive index and 2nd and 3rd order nonlinear susceptibilities decrease with increasing the studied films. The lattice dielectric constant values exceeded the high-frequency dielectric constant, indicating the presence of lattice vibrations and free carriers. Electronic parameters are fluctuating with increasing film thickness. The observed changes in nonlinear optical parameters and electronic properties highlight the potential of PPMA films for applications in photovoltaic and optoelectronics.

Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder

We present electrical properties of heavily doped and completely compensated Ge films grown on semiinsulating GaAs(100) substrates by vacuum evaporation. The thin (∼100 nm) Ge films are single-crystal and characterized using temperature-dependent transport measurements, with anomalously large activation energy up to half the Ge bandgap, anisotropy of the transverse magnetoresistance, high resistivity (up to 140 Ω cm), low free charge carrier mobility (∼50 cm2/V·s), and concentration (∼1014–1015 cm−3). This behaviour is attributed to a completely compensated semiconductors arising from Ga and As impurity incorporation and large-scale potential fluctuations. Analysis suggests a two-dimensional percolative transport mechanism in Ge-on-GaAs heterostructures.

Mitigating the impact of accidental ammonia release during bunkering operation

Abstract Ammonia is a carbon free energy carrier that is gaining popularity as the next generation marine fuel. However, the adoption of ammonia by ships will not be feasible without solving the challenges during its bunkering operation, of which the utmost is the harmful effect from ammonia’s toxicity. A potential release of ammonia during bunkering operation will cause harmful impacts of various levels depending on its initial physical states, rate of release, total released inventory, local geometries, terrain and weather conditions. Without any mitigation measures in place, the released ammonia will undergo a complicated dispersion, dilution and uplifting pathway, affecting potential sensitive receptors in the surrounding. The knowledge and experience learnt from chemical, fertilizer and refrigeration use of ammonia provide valuable references for ammonia handling at sea and port. Mitigation for released ammonia can follow a two-pronged strategy: 1) the preventive strategy to reduce the likelihood of accidental release and 2) the protective strategy to reduce the release severity. This translates into mitigation technologies developed for pre-release scenarios and post-release scenarios. The pre-release mitigation considers inherent safer engineering design and good management, while the post-release mitigation focuses on early vapor detection and warning, containment, suppression, counter measures and emergency response. Nevertheless, there is a lack of understanding and use cases on how to extend the findings to ammonia bunkering operation, where the contact between ammonia and the sea environment, in particular sea water surface and column, is inevitable. The review provides a consolidated view on the applicability of land-based post-release mitigations such as physical containment, use of barriers, foams, dilutions and other chemical approaches to mitigation the consequences of accidental ammonia release from future ammonia bunkering operation.

Enhanced NIR reflectance black pigments based on CuCr2-xTixO4: Synthesis and properties

Ti-doped CuCr2O4 is an excellent black cool pigment for preventing surface overheating. Ti was introduced into the precursor in the form of tetrabutyl titanate(C16H36O4Ti) and calcined to obtain a CuCr2-xTixO4 black pigment. XRD, XPS, and EDS results showed that a portion of Ti entered the lattice of CuCr2O4, while the remaining Ti existed in the form of TiO2. The absence of TiO2 reduced the absorption of visible light. As the x value increased, the absorption of visible light by CuCr2-xTixO4 decreased and L* increased. CuCr1.1Ti0.9O4 has a maximum reflectance of 23.0% for NIR solar reflectance, and the mechanism could be determined by the following three reasons: 1) Small particles help to reflect NIR; 2) TiO2 improves the NIR reflectivity of the black pigment; and 3) According to the Drude free-electron theory, the substitution of Ti4+ for Cr3+ increases the concentration of free carriers in CuCr2O4, which increases the NIR reflectance. Application studies indicated that the CuCr1.1Ti0.9O4 coating on an alumina plate was approximately 3 °C lower than the CuCr2O4 coating after 40 minutes of irritation by an IR lamp. Therefore, CuCr1.1Ti0.9O4 pigments exhibited potential applications in insulating materials.

Comparative study of optical properties and photocatalytic performance of Cd0.4Mn0.6O nanocomposites incorporated with different metal oxides

The structural, optical, and photocatalytic properties of Cd0.4Mn0.6XO nanocomposites with 50 wt% of X were investigated (X denotes ZnO, SnO, CuO, Al2O3, Fe2O3, NiO, and CoO). The crystal structure of Cd0.4Mn0.6XO nanocomposites is composed of the monoclinic Cd2Mn3O8 phase, along with other individual phases dependent on the type of X dopant. The crystallite sizes are between 11.07 nm for CoO and 23.65 nm for ZnO, whereas the particle sizes are between 9.75 nm for ZnO and 35.61 nm for Fe2O3. The SnO, NiO, and CoO nanocomposites had the highest values of the effective surface area of 29.71, 26.3, and 24.1 m2/g, respectively. The NiO and SnO nanocomposites had the highest and lowest absorbance, respectively, notably at wavelength below 400 nm. SnO, NiO, CuO, and Fe2O3 nanocomposites have the highest values of energy gap (Eg > 2 eV), whereas CoO, ZnO, and Al2O3 nanocomposites have the lowest Eg values (<2 eV). The SnO nanocomposite exhibited the highest values of refractive index, q-factor, lattice dielectric constant (εL), free carrier density (Nm∗), and optical/electrical conductivity when compared to the other Cd0.4Mn0.6XO nanocomposites. Interestingly, the values of εL, and Nm∗ were enhanced to 21.2 and 4.9 × 1057 cm−3g−1 for SnO nanocomposite, followed by NiO and Fe2O3 nanocomposites. The photodegradation efficiency towards methylene blue (MB) using the Cd0.4Mn0.6XO catalysts after 3 h of irradiation equals 97.94, 76.43, 74.43, 71.32, 65.98, 62.86, and 48.55 % for ZnO, NiO, SnO, Fe2O3, Al2O3, CuO and CoO nanocomposites, respectively. The photocatalytic performance of Cd0.4Mn0.6XO catalysts towards MB was compared to earlier investigations and a scavenger test was performed to validate the formation of reactive oxygen species. The features of Cd0.4Mn0.6XO nanocomposites are convenient for light-emitting diodes, solar cells, reduced electronic noise, high-power operation, and water purification.

Spectroscopic ellipsometry investigation of a 6H–SiC single crystal plate for potential use in graphene optoelectronic devices

At room temperature, the spectroscopic ellipsometry SE parameters Epsi (ψ) and Delta (Δ) for 6H–SiC crystal substrate were measured in the wavelength range 350–1700 nm at four different angles of incidence, 60°, 65°, 70°, and 75°. An SE model was developed to extract optical consents of 6H–SiC crystal substrate from the experimentally measured SE parameters. In the wavelength range 350–1700 nm, the refractive index of the 6H–SiC crystal substrate was extracted and fitted to two terms of the Sellmeier dispersion function. In the wide spectral range (350–1700 nm), the Wemple-DiDomenico (WDD) dispersion model shows how the real refractive index changes with wavelength. The analysis of refractive index dispersion of the 6H–SiC crystal substrate using Sellmeier dispersion function and WDD optical model allows to extract oscillator strength Nfij, average oscillator energy Eo, dispersion energy of the single oscillator Ed, lattice oscillator strength El, Abbe dispersion number, energy gap Eg, density of valence electrons nv, refractive index at infinite wavelength n∞, lattice dielectric constant εL, the ratio of free carrier density to free carrier effective mass (N/m∗), and plasma frequency ωp. For the 6H–SiC crystal substrate, in the desired spectral range (240–1700 nm), it does not have any depolarization effect on the reflected polarized light.

Coexistence of the Band Filling Effect and Trap-State Filling in the Size-Dependent Photoluminescence Blue Shift of MAPbBr3 Nanoparticles.

The size-dependent photoluminescence (PL) blue shift in organometal halide perovskite nanoparticles has traditionally been attributed to quantum confinement effects (QCEs), irrespective of nanoparticle size. However, this interpretation lacks rigor for nanoparticles with diameters exceeding the exciton Bohr radius (rB). To address this, we investigated the PL of MAPbBr3 nanoparticles (MNPs) with diameters ranging from ~2 to 20 nm. By applying the Brus equation and Burstein-Moss theory to fit the PL and absorption blue shifts, we found that for MNPs larger than rB, the blue shift is not predominantly governed by QCEs but aligns closely with the band filling effect. This was further corroborated by a pronounced excitation-density-dependent PL blue shift (Burstein-Moss shift) at high photoexcitation densities. Additionally, trap-state filling was also found to be not a negligible origin of the PL blue shift, especially for the smaller MNPs. The time-resolved PL spectra (TRPL) and excitation-density-dependent TRPL are collected to support the coexistence of both filling effects by the high initial carrier density (~1017-1018 cm-3) and the recombination dynamics of localized excitons and free carriers in the excited state. These findings underscore the combined role of the band filling and trap-state filling effects in the size-dependent PL blue shift for solution-prepared MNPs with diameters larger than rB, offering new insights into the intrinsic PL blue shift in organometal halide perovskite nanoparticles.

Accounting for the energy dispersion of free carriers induced by powerful femtosecond laser radiation in dielectrics

Dynamics of free carriers in the conduction band of dielectrics induced by femtosecond near infrared laser radiation is analyzed. It is stressed the importance of accounting for the energy dispersion term in the Fokker-Planck equation describing such dynamics.

An Ultrasensitive Bi2O2Se/In2S3 Photodetector with Low Detection Limit and Fast Response toward High-Precision Unmanned Driving.

The machine vision utilized in unmanned driving systems must possess the ability to accurately perceive scenes under low-light illumination conditions. To achieve this, photodetectors with low detection limits and a fast response are essential. Current systems rely on avalanche diodes or lidars, which come with the drawbacks of increased energy consumption and complexity. Here, we present an ultrasensitive photodetector based on a two-dimensional (2D) Bi2O2Se/In2S3 heterostructure, incorporating a homotype unilateral depletion band design. This innovative architecture effectively modulates the transport of both free and photoexcited carriers, suppressing the dark current and facilitating the rapid and efficient separation of photocarriers. Owing to these features, this device exhibits a responsivity of 144 A/W, a specific detectivity of 1.2 × 1014 Jones, and a light on/off ratio of 1.1 × 105. These metrics rank among the top values reported for state-of-the-art 2D devices. Moreover, this device also demonstrates a fast response time of 170/296 μs and a low noise equivalent power of 0.57 fW/Hz1/2, attributes that endow it with ultraweak light imaging capabilities. Furthermore, we have successfully integrated this device into an unmanned driving system, providing a perspective on the design and fabrication of future optoelectronic devices.

Simulation of quantum states in solid-state ferromagnetic nanostructures

Purpose of the article. Identification and analysis of mathematical expressions for the energy spectrum of charge carriers in nano-sized magnetic films of nickel and Ni-Cu (substrate), as well as NiO-Ni-Cu (substrate) structures.Methods. In this work, based on basic quantum mechanical concepts and taking into account the boundary conditions for coupled quantum wells, expressions for the energy spectrum of electrons are obtained. The ferrimagnetic properties of nickel are taken into account through the effective mass value. The solution of nonlinear equations that determine discrete energy levels was achieved by numerical methods using the Mathcad mathematical package.Results. Transcendental expressions for the energies of free charge carriers in quantum wells of ferromagnetic nickel films are obtained, and the influence of the position of nickel on the copper substrate is shown. It has been shown that the use of a copper substrate leads to an increase in the density of energy levels in the nickel nanofilm. The influence of the oxide layer on single-electron states in nanofilms of nickel and its oxide is considered within the framework of the Anderson model. Based on the numerical solution of the transcendental equations obtained in the work, the influence of the ratio of the thicknesses of a ferromagnetic metal and its oxide on the energy levels of electrons localized in the oxide layer is shown.Conclusions. The formulas presented in the work for the energy spectrum take into account the energy relief of a complex quantum well, the dimensions of the film, surface oxide, and the significant effective mass in the region of the ferromagnetic film. It has been shown that an increase in the effective mass in magnetic heterostructures leads to an increase in the electron density of states. It was found that the density of electronic states in the region of surface nickel oxide is practically independent of the thickness of the nickel film. The results and conclusions of the work can be used for theoretical prediction of the physical properties of magnetic nanostructures, in particular spintronic elements.

Investigation of Persistent Photoconductivity of Gallium Nitride Semiconductor and Differentiation of Primary Neural Stem Cells.

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices.

Optical properties of 4H-SiC and 6H-SiC from infrared to vacuum ultraviolet spectral range ellipsometry (0.05–8.5 eV)

Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are obtained from reflection mode spectroscopic ellipsometry and unpolarized transmittance measurements for 4H and 6H stacking sequence silicon carbide (SiC) nitrogen-doped single crystals from the infrared (IR) to vacuum ultraviolet (VUV) spectral range. A single parametric model describing ɛ predominately for the ordinary directions is developed over the 0.05–8.5 eV spectral range from analysis of (0001)-oriented back side roughened 4H-SiC and 6H-SiC single crystals with some contribution from the extraordinary direction of 6H-SiC in the IR region. Indirect bandgaps for 4H-SiC and 6H-SiC are found to be 3.30 and 3.03 eV, respectively, and the corresponding direct optical gaps are at 4.46 and 4.42 eV. A model describing the optical response in the IR spectral range is created using a Drude expression and either transverse optical (TO) and longitudinal optical (LO) (TOLO) or Lorentz oscillator models. Free carrier concentration (N) is optically measured to be 3.7 × 1018 and 3.3 × 1018 cm−3 using TOLO and Lorentz oscillator models, respectively, and the corresponding carrier mobility (μ) is 34 and 39 cm2/V s for 4H-SiC. Under the same assumption for 6H-SiC, N is measured to 8 × 1018 cm−3 using either TOLO or Lorentz oscillator models and μ is 9 and 10 cm2/V s using the TOLO and Lorentz oscillator models, respectively, in the ordinary direction and 5 cm2/V s in the extraordinary direction using either model. For 4H-SiC, using the TOLO oscillator model, TO and LO phonon modes are measured at 797.7 and 992.1 cm−1, respectively, and corresponding modes are found at same locations using the Lorentz oscillator model. In 6H-SiC, using the TOLO model, TO modes in ordinary and extraordinary directions are found at 797.7 and 789.7 cm−1, and corresponding modes are at 796.9 and 788.9 cm−1 using the Lorentz oscillator model. The LO modes using the TOLO model are found at 992 and 984 cm−1 in the ordinary and extraordinary directions, respectively, and the same modes in the corresponding direction using the Lorentz oscillator model are located at 975.9 and 967.9 cm−1.

Low-Power Threshold Optical Bistability Enabled by Hydrodynamic Kerr Nonlinearity of Free Carriers in Heavily Doped Semiconductors

Low-Power Threshold Optical Bistability Enabled by Hydrodynamic Kerr Nonlinearity of Free Carriers in Heavily Doped Semiconductors

Coulomb Contribution to Shockley-Read-Hall Recombination.

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect.