Free-carrier Dispersion Effect Research Articles

A high-performance Si-based MOS electrooptic phase Modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V/sub /spl pi//=4 V is demonstrated with an 8-mm active region length and a 4-/spl mu/m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 /spl mu/m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0/spl times/10/sup 17/ cm/sup -3/ doping level in the active region.

Carrier-induced optical bistability in silicon ring resonators

We demonstrate optical bistability in a micrometer-sized silicon ring resonator based on the free-carrier dispersion effect in silicon. We measure the transfer function of the resonator showing a hysteresis loop with an input optical power of less than 10 mW. The influence of the thermal optical effect, which is minimized in the experiment by use of nanosecond pulses, is evaluated theoretically. Applications include sequential logic operations for all-optical routing.

Thermo-Electrical Analysis of an Optoelectronic Modulator Integrated in a SOI Rib Waveguide Operating in the Gb/s Regime

ABSTRACTSilicon is the most diffused material for microelectronic industry and, in recent times, it is becoming more and more widespread in integrated optic and optoelectronic fields. We present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on free-carrier dispersion effect, realizable on standard SOI wafer. The optical behavior is based on the vanishing of the lateral confinement in the rib region, and consequent cut-off of the propagating mode. Results show that an optical modulation depth close to 100% can be reached with a bandwidth of about 154 MHz. Smart electrical driving, that is an injection overdrive of a few volts for a very short time, allows to reach total ON-OFF switching time of about 860 ps. For that bias scheme the fall transient is then limiting the whole dynamic and the resulting bit rate in a pure digital modulation scheme is about 1.2 Gb/s

Micrometer-scale all-optical wavelength converter on silicon

We demonstrate a highly integrated micrometer-scale low-power wavelength converter based on the free-carrier dispersion effect in silicon. The conversion is achieved through all-optical modulation of a silicon ring resonator by use of modulated cw control light. The ring resonator has a radius of 5 microm and a Q of approximately 10,000. Both inverted and noninverted modulation are achieved at a bit rate of 0.9 Gbits/s with a control power of 4.5 mW. The scaling of the required control power for operation with respect to the characteristics of the ring resonator is established.

Scaling the modulation bandwidth and phase efficiency of a silicon optical modulator

We present an optimized design and detailed simulation of an all-silicon optical modulator based on a silicon waveguide phase shifter containing a metal-oxide-semiconductor (MOS) capacitor. Based on a fully vectorial Maxwell mode solver, we analyze the modal characteristics of the silicon waveguide. We show that shrinking the waveguide size and reducing gate oxide thickness significantly enhances the phase modulation efficiency because of the optical field enhancement in the voltage induced charge layers of the MOS capacitor, which, in turn, induce refractive index modulation in silicon due to free carrier dispersion effects. We also analyze the device speed by transient semiconductor device modeling. As both optical absorption and modulation bandwidth increase with increasing doping concentration, we show that, with a nonuniform doping profile in the waveguide, balance between the device operation speed and optical loss can be realized. Our simulation suggests that a TE-polarized optical phase modulator with a bandwidth of 10 GHz and an on-chip optical loss less than 2 dB is achievable in silicon.

Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguides

We show time-resolved measurement of Raman gain in Silicon submicron-size planar waveguide using picosecond pump and probe pulses. A net nonlinear gain of 6 dB is obtained in a 7-mm long waveguide with 20.7-W peak pump power. We demonstrate an ultrafast all-optical switch based on the free-carrier dispersion effect in the silicon waveguide, whose transmission is enhanced by more than 13 dB due to the Raman effect.

Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator

We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-μm-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 μm by using an electrical power under dc conditions on the order of 25 μW.

Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide

We analyze, from a theoretical point of view, a novel silicon optical amplitude-phase modulator integrated into a SOI (silicon on insulator) optical waveguide and based on a three terminal electronic structure which gives rise to definite advantages in comparison with a classical p-i-n diode based modulator. The proposed device utilizes the free carrier dispersion effect to produce the desired refractive index and absorption coefficient variations. The MEDICI two-dimensional (2-D) semiconductor device simulator has been used to analyze the electrical operation, with reference to the free carrier concentration injected into the optical channel, its uniformity and the required current density and electrical power. The optical investigation was carried out by means of FDM (finite difference method), EIM (effective index method), and BPM (beam propagation method) tools, giving rise to a complete evaluation of the properties of our device. We report the results for both the amplitude and phase modulators, paying attention to the static and the dynamic behavior. In particular, an amplitude modulation of 20%, with an injection power of about 126 mW, and a switching time of 5.6 ns can be achieved theoretically, Furthermore, as a phase modulator, the device exhibits a very high figure of merit, predicting an induced phase shift per volt per millimeter of about 215/spl deg/, for a injection power of about 43 mW, and a switching time shorter than 3.5 ns.