This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.
Read full abstract