Four-inch Wafers Research Articles

A New Silicon Mold Process for Polydimethylsiloxane Microchannels.

As an alternative to SU-8 soft lithography, a new silicon mold process of fabricating PDMS microchannel chips was proposed. A picosecond laser is used to cut through a 550 μm thick silicon wafer and generate the original microchannel pattern with a 50 μm minimum feature size. This single-crystal silicon pattern, with the edge debris caused by laser cutting being trimmed off by a KOH solution and with the protection field oxide layer being removed by BOE afterwards, firmly resided on a glass substrate through the anodic bonding technique. Four-inch wafers with microchannel patterns as the PDMS mold cores were successfully bonded on Pyrex 7740 or Eagle XG glass substrates for the follow-up PDMS molding/demolding process. This new maskless process does not need a photolithography facility, but the laser cutting service must be provided by professional off-campus companies. One PDMS microchannel chip for particle separation was shown as an example of what can be achieved when using this new process.

Coupling model of electromigration and experimental verification – Part I: Effect of atomic concentration gradient

This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech and standard wafer-level electromigration acceleration test (SWEAT)-like structures, which were fabricated on four-inch wafers. Second, a molecular dynamics (MD) simulation-based diffusion-induced strain was incorporated into the existing coupled theory. Third, one-dimensional (1D) governing equations in terms of atomic concentration for un-passivated and passivated configurations were derived for void formation and growth, using a modified Eshelby's solution to consider the effect of passivation. Fourth, a systematic approach was established, including theoretical formulations and experimental methods, to obtain key material properties, i.e., critical atomic concentration and diffusivity. We then determined the material's properties from a specific set of experimental data, using aluminium (Al) as a carrier for demonstration. These properties were then used to predict the time to failure and void growth under various conditions. The theoretical results agreed well with the experimental data. Moreover, we theoretically determined the critical threshold products of current density and conductor length for the un-passivated and passivated configurations, respectively. Both experiment and theory showed that, in the absence of mechanical stress in un-passivated configurations, the atomic self-diffusion, which was opposite to electron wind, was significant in resisting EM development. However, when mechanical stress was present, such as in passivated configurations, stress migration played a dominant role in resisting EM development. Our numerical results showed that the current density exponent n in Black's law remained as 2 in the range of the current density greater than 0.2 MA/cm2 and rapidly approached infinity at a low level of current density.

Novel structuring technique for diamond coatings

Here we report a novel structuring technique for diamond coatings using a copper masking on a previously deposited diamond layer to epitaxially grow a subsequent diamond layer only at the exposed areas of the mask. An 8 μm thick copper mask is applied onto the substrate using physical vapor deposition and structured by standard photolithographic methods. Hot filament chemical vapor deposition is used to grow the 14 μm thick structured diamond layer on the diamond coated silicon wafer. Micro and nano crystallinity of the diamond layers are varied, as well as the doping with boron to verify the applicability of the new structuring method for different kinds of diamond qualities. It is shown that four-inch wafers can be fully structured with this high temperature masking technique and the resolution was mostly affected by the quality of the printed mask used for the photolithographic structuring of the copper mask. This diamond structuring method could pave the way for diamond being used in electronics or adding additional functionalities to diamond coated tools.

Simple Benchtop Approach to Polymer Brush Nanostructures Using Visible-Light-Mediated Metal-Free Atom Transfer Radical Polymerization.

The development of an operationally simple, metal-free surface-initiated atom transfer radical polymerization (SI-ATRP) based on visible-light mediation is reported. The facile nature of this process enables the fabrication of well-defined polymer brushes from flat and curved surfaces using a "benchtop" setup that can be easily scaled to four-inch wafers. This circumvents the requirement of stringent air-free environments (i.e., glovebox), and mediation by visible light allows for spatial control on the micron scale, with complex three-dimensional patterns achieved in a single step. This robust approach leads to unprecedented access to brush architectures for nonexperts.

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

Commercial production of QWIP wafers by molecular beam epitaxy

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Synthesis of crack-free thick diamond wafer by step-down control of deposition temperature

Due to growth tensile stress, which evolves in diamond films during deposition, thick diamond films are easily cracked. In this study we successfully prevented growth cracks by introducing thermal compressive stress with step-down control of deposition temperatures during growth. Three deposition temperature drops of 10 °C each during deposition enabled us to successfully synthesize crack-free four-inch diamond wafers several hundred micrometers in thickness. This method is very simple and may be applicable to coating of films of various materials different from those of substrates.

Four-inch wafers seen as standard in five years : Judy Curtis. Electronics p. 88. (Nov. 27 1975)

Four-inch wafers seen as standard in five years : Judy Curtis. Electronics p. 88. (Nov. 27 1975)