In this paper, an approach of forming a band gap gradient by depositing a layer of Ge between the Mo layers by magnetron sputtering is proposed. The diffusion depth of the Ge into Cu2ZnSnSe4 (CZTSe) thin film can be effectively controlled by the Mo transition layer, resulting in the formation of Cu2Zn(SnxGe1-x)Se4 (CZTGSe) thin film with a band gap grading along the back surface. To validate the formation of the Ge gradient in the absorber, energy dispersive spectrometer line scanning and grazing incidence X-ray diffraction were performed. Furthermore, the impact of Ge layer on the morphologies of CZTSe was assessed using scanning electron microscopy. As a result, the introduced Ge layer formed a Ge grading along the back surface and improved the crystal quality of the absorber. Compared to CZTSe solar cells, the power conversion efficiency (PCE) of CZTGSe solar cells with a Ge gradient improved from 5.79 % to 9.28 %.
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