The results of published theoretical investigations of irradiation-induced atomic displacements and of point-defect formation energies in Ni 3A1 were used for estimating the point-defect populations resulting from electron irradiation, and their subsequent evolution during anneals at increasing temperatures. Among the created defect species, Ni vacancies and Ni dumbbell interstitials of two different configurations are strongly predominant. During anneals, most interstitials incorporating Al atoms convert into NiNi dumbbells. The latter perform low-temperature long-range migration with two distinct activation energies; Ni vacancies migrate at substantially higher temperatures. This picture is in excellent agreement with the resistivity recovery spectrum and activation enthalpies experimentally determined in electron-irradiated Ni3A1.