Form Of Drain Research Articles

Improved Device Performance in Nano Scale Transistor: An Extended Drain SOI MOSFET

Reducing the size of SOI MOSFET especially in nano regime for applying them in Integrated Circuits is difficult, because of the important problems of Short Channel Effects (SCE). These effects reduce the reliability of the device and it is objective to decrease them. In this paper, the goal is to propose a new structure for SOI MOSFET to improve SCEs. In this case the, the form of drain and channel is changed to obtain more reliable device. In this case, the drain region is extended into the channel improving the performance of the device. The drain has higher doping concentration, which causes better performance. The simulation with two dimensional ATLAS simulator shows that the new structure has better performance than the conventional one in cases of off current, subthreshold slope, threshold voltage, DIBL, maximum electron temperature and drain current which leads to more reliable device.

WHAT TO DO WITH THE WASTE WATER OF A COUNTRY HOUSE.

For the convenience of studying this subject, country houses are divided into three classes: 1. Those which have water service and use water closets for the disposal of excreta just as in the city. 2. Those in which the excreta are disposed of by some method of dry closet; sewers not being necessary, but some form of drain for carrying the waste waters from the kitchen sink, bath, etc. 3. Those which have no water service, no bath, etc., a condition found in by far the greater number of houses outside of the cities. In such a house a slop bowl should be put up in some convenient place, either in the house or outside, and connected with a surface or subsoil drain. In England, where much attention has been paid to the subject of draining isolated houses, the general opinion seems to be that some form of surface drain