We investigated the electrical properties of low threading dislocation density (TDD) GaN crystals grown by the thin flux growth method in the Na-flux point seed technique for the first time. In addition, we attempted to fabricate GaN crystals with further lower TDD and curvature by using point seeds having a smaller diameter of 250 μm, compared to that from a previous study having a diameter of 1000 μm. As a result, the free carrier concentration was 1.1 × 1020 cm−3 with a resistivity of 9 × 10−4 Ωcm. Moreover, TDD in about 80% of the observation area was on the order of 103 cm−2 or less, and the radius of curvature of the GaN crystal was over 100 m for both a// and m//, due to the smaller-sized point seeds. These results suggest that low-TDD GaN crystals with low resistivity can be realized with this method, and Na-flux GaN crystals exhibit great performance as substrates of power devices.