The resistivities of undoped and 4 wt%BaZrO3-doped(BZO) GdBa2Cu3O7 − δ (GdBCO) thin films were measured in a temperature activated flux-flow regime(TAFF). In addition, resistivity versus rotation angle of magnetic field,ρ(Θ), measurements were done near the critical temperature,Tc. The results of undoped and doped GdBCO were compared with ones ofYBCO, and they showed that YBCO has better intrinsic pinning of CuO-planesthan GdBCO. This is explained by the extra stacking faults distorting theab-planes in GdBCO. The BZO-doping increased activation energy,U0, in geometry at fields higher than 1 T in YBCO and 3 T in GdBCO, but reducedU0 in the direction in the whole measured magnetic field range. Also, the irreversibility field,Birr, was enhanced in BZO-doped GdBCO at fields higher than 3 T in , but was reduced in the direction. The reduction of U0 and Birr in the direction in BZO-doped films is explained by BZO nanorods distorting theab-planes, too. The distortion may explain the more isotropicρ(Θ) in GdBCO and BZO-doped material. The 4 wt% BZO-doping seems to be more effective onGdBCO, and we suggest that either cation substitution, excess strain caused by theinteraction of the extra stacking faults and BZO nanorods, or oxygen deficiencyresult in nanosized regions whose superconducting properties are reduced andwhich act as extra pinning sites. According to the resistivity measurements nearTc, the undoped YBCO should be used if high pinning of theab-planes is needed. Further, from these materials 4 wt% BZO-doped GdBCO is best suitedfor applications where high magnetic fields are needed at high temperatures.