The photoelectric properties of boron- and fluorine-ion-implanted ZnSe have been investigated by means of photoconductivity and cathodoluminescence measurements. The photoconductivity spectra have shown the existence of shallow levels 0.12 and 0.10 eV originating from boron and fluorine impurities, respectively. The quenching effect on a copper green photoconduction band has been found in the fluorine-ion-implanted ZnSe. It is suggested that the quenching behaviour arises from the Coulombic interaction between the copper acceptors and the fluorine donors. The cathodoluminescence spectra have shown the formation of the self-activated luminescence (SAL) bands and the marked decrease of the copper green emission bands by the boron- and fluorine-ion-implantations.
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