Fluctuation-induced Tunneling Research Articles

Temperature dependent electrical resistance and mesoscopic electronic transport mechanisms on aerographite and single-walled carbon nanotube aerogel

We investigate temperature dependent electrical resistance properties of aerographite and single-walled carbon nanotube (SWCNT) aerogel in the temperature range of 2–300 K by employing the four-probe method with magnetic field effects (in the range 0–9 T, in steps of 2 T). The current–voltage (I–V) curves were taken for several temperatures varying from 5 to 300 K, and the electrical resistance values of aerographite and SWCNT aerogel were decreased from 7.30 Ω (5 K, 0 T) to 4.88 Ω (300 K, 0 T) and 22.56 Ω (5 K, 0 T) to 0.99 Ω (300 K, 0 T) with temperature increases, respectively. Experimental results show that the electrical resistance falls exponentially as the temperature increases. Such temperature dependence of R(T) points to a form of tunneling conduction or hopping. Two mesoscopic mechanisms for electronic transport, fluctuation-induced tunneling conduction (FITC) and variable range hopping (VRH), are employed to explicate possible electrical conduction mechanisms occurring in aerographite and SWCNT aerogel, respectively. These mainly result in disorder-induced symmetry-breaking, which are modified by their structural symmetries and electronic band structures, both play important roles in temperature dependent electrical resistance properties of aerographite and SWCNT aerogel. Characteristic parameters (T0, T1, and R0) have been estimated using the morphology and the uncertainty principle for aerographite and the percolation theory for SWCNT aerogel. While the FITC mechanism captures a wide temperature range of data for aerographite, the VRH model provides an explanation for SWCNT aerogel. This study provides groundwork for further development of carbon aerogel systems with high conductivity in large-scale preparation.

Sensing mechanisms of nanomodified Portland cement composites

Mortar sensors were fabricated as beams incorporating different amounts of carbon nanofibers (CNFs) synthesized in-situ on cement particles. Changes in electrical resistivity were measured and compared to recorded changes in compressive stress, temperature, and humidity. Sensing mechanisms and corresponding models were developed. The findings of the study indicate that the piezoresistive effect is influenced by the critical concentration of CNFs inside the composite matrix and the tunneling effect. In addition, water absorption and desorption, as well as the amount of chemically bound water played an important role in humidity sensing. Thermal fluctuation-induced tunneling conduction was dominant for the temperature sensitivity.

The Origin of the Low-Temperature Minimum of Electrical Resistivity in Strontium Ferromolybdate Ceramics

In this work, we analyze the electrical behavior of strontium ferromolybdate below room temperature. We demonstrate that in SFMO ceramics, SFMO thin films deposited by pulsed laser deposition including (100) and (111) textured thin films, as well as in nonstoichiometric SFMO ceramics, an intergrain tunneling mechanism of charge carrier conduction leads to a decrease in resistivity with increasing temperature in the low-temperature region. This intergrain tunneling can be attributed to fluctuation-induced tunneling. On the other hand, bulk metallic resistivity of the grains, which increases with temperature, becomes dominant at higher temperatures and magnetic fluxes. The interplay of these conduction mechanisms leads to a resistivity minimum, i.e., a resistivity upturn below the temperature of minimum resistivity. Several mechanisms have been discussed in the literature to describe the low-temperature upturn in resistivity. Based on available literature data, we propose a revised model describing the appearance of a low-temperature resistivity minimum in SFMO ceramics by an interplay of fluctuation-induced tunneling and metallic conductivity. Additionally, we obtained that in the region of metallic conductivity at higher temperatures and magnetic fluxes, the pre-factor Rm of the temperature-dependent term of metallic conductivity written as a power law decreases exponentially with the temperature exponent m of this power law. Here, the value of m is determined by the charge scattering mechanism.

Investigation of electrothermal properties of indium-tin-oxide thin films

Transparent conductive oxide (TCO) thin films are highly sought-after for their unique characteristics of conducting electricity and transmitting visible light, making them ideal conductive coating materials for electronic devices. We carried out a comprehensive analysis of the deposition, optical, electrical, and structural properties of ITO and Ag/ITO thin films on glass substrates in this study. The weight ratio of the deposited metals was 1:10, 2:10, and 4:10[Formula: see text]wt.% (Sn:In) for ITO films and 1:1:10[Formula: see text]wt.% (Ag:Sn:In) for Ag–ITO film. The films were annealed at 300°C using a program controller furnace. We employed infrared cameras to analyze the surface temperature profiles of these thin films under external voltage supply. We also investigated the resistivity behavior of both ITO and Ag–ITO films, analyzing them with regard to Mott’s variable range hopping (VRH) model and the fluctuation-induced tunneling model. Scanning electron microscope images revealed that adding Ag increased the grain size of ITO thin films. The average grain size for ITO thin film was determined as 186[Formula: see text]nm, while it was found to be 270[Formula: see text]nm for Ag–ITO thin film. Furthermore, incorporating Ag into the ITO thin film resulted in a reduction of 21.5% in transmittance over the complete visible range of the electromagnetic spectrum when compared to the ITO thin film without Ag as measured by ultra-visible spectrophotometer. The figure of merit was obtained as [Formula: see text] for ITO and [Formula: see text] for Ag–ITO thin films. However, the resistance of the ITO thin film was calculated to be 9.58[Formula: see text]k[Formula: see text], while that of the Ag–ITO film was found to be 6.99[Formula: see text]k[Formula: see text]. The ITO thin film that included Ag exhibited a lower electrical resistivity due to the larger grain size caused by doped Ag atoms in the structure, leading to less electron scattering at the grain boundaries and a resulting decrease in resistivity as determined by four-point probe system. Thermal imaging camera measurements revealed that the surface temperature of the ITO thin film decreased with the addition of Ag under high voltage application, but not under low voltage. When a voltage of 350[Formula: see text]V and 250[Formula: see text]V was applied to the thin films, the ITO film exhibited a surface temperature of 73.9°C and 50.4°C, whereas under identical conditions, the Ag–ITO film showed a surface temperature of 62°C and 44.1°C, respectively. Furthermore, both films exhibited exponentially increasing surface temperature behavior under a certain voltage, suggesting that they have potential for transparent heaters and high-voltage/low-current applications.

Synthesis and electrical properties of PANI/CeO2 nanocomposites: A study on the fluctuation-induced tunneling conduction

This study presents the preparation of PANI/CeO2 nanocomposites via in situ chemical oxidative polymerization in an acidic environment at subzero temperatures to optimize nanocomposite properties. Two compositions of PANI/CeO2, with 2% and 5% CeO2 nanoparticles, were synthesized and characterized structurally using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The temperature-dependent electrical conductivity was measured employing the four-probe technique and analyzed theoretically using the fluctuation-induced tunneling (FIT) model. The analysis of variance (ANOVA) confirmed the validity of the FIT model in elucidating charge transport mechanisms within the PANI/CeO2 composites.

Direct current conductance and 1/f-noise in cellulose nanofiber–multi-walled carbon nanotube composites for applications in flexible electronic devices

We report on the studies of conduction mechanism, direct current conductance, and 1f-noise of cellulose nanofiber (CNF) and multiwalled carbon nanotube (MWCNT) composites. The composites were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, and field emission scanning electron microscopy. The temperature- and voltage-dependence of the dc conductance Σ were, respectively, probed to investigate the charge transport mechanism and the electrical response of the composite. At room temperature, the increase in Σ with wt. % of MWCNT ϕ showed typical percolation behavior. The Σ−T behavior was fitted to the combination of one-dimensional variable range hopping and the fluctuation-induced tunneling, which were attributed to hopping of charge carriers through 1D MWCNTs and the tunneling of charge carriers between the bundles of MWCNTs, respectively. The non-Ohmic electrical conduction was characterized by the onset voltage V0(T) which scaled with Ohmic conductance Σ0 as V0(T)∼Σ0(T)xT, with xT being the onset exponent increased with ϕ. A scaling description based on the data collapse method was adopted to find the parameters V0(T) and xT. The noise power spectrum SV(f) followed the relation SV(f)∼Vβ with two different power-laws: β1 in the Ohmic and β2 in the non-Ohmic region (β1>β2). Interestingly, this change in power-laws occurs at the same V0(T) obtained from Σ−V curves. A simple model was proposed to explain the noise behavior after V0(T). It is expected that such electrical characterization of CNF-MWCNT nanopaper composite would open up their possibility of application in flexible electronic devices, intelligent networks, sensors, and actuators.

Absence of Weak Localization Effects in Strontium Ferromolybdate

Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications, since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K and a low-field magnetoresistance (LFMR). The magnetic, resistive and catalytic properties of the double perovskite SFMO are excellent for spintronic (non-volatile memory), sensing, fuel cell and microwave absorber applications. However, due to different synthesis conditions of ceramics and thin films, different mechanisms of electrical conductivity and magnetoresistance prevail. In this work, we consider the occurrence of a weak localization effect in SFMO commonly obtained in disordered metallic or semiconducting systems at very low temperatures due to quantum interference of backscattered electrons. We calculate the quantum corrections to conductivity and the contribution of electron scattering to the resistivity of SFMO. We attribute the temperature dependence of SFMO ceramic resistivity in the absence of a magnetic field to the fluctuation-induced tunneling model. We also attribute the decreasing resistivity in the temperature range from 409 K to 590 K to adiabatic small polaron hopping and not to localization effects. Neither fluctuation-induced tunneling nor adiabatic small polaron hopping favors quantum interference. Additionally, we demonstrate that the resistivity upturn behavior of SFMO cannot be explained by weak localization. Here, the fitted model parameters have no physically meaningful values, i.e., the fitted weak localization coefficient (B′) was three orders of magnitude lower than the theoretical coefficient, while the fitted exponent (n) of the electron–electron interaction term (CnTn) could not be assigned to a specific electron-scattering mechanism. Consequently, to the best of our knowledge, there is still no convincing evidence for the presence of weak localization in SFMO.

High-Performing Polycrystalline MoS2-Based Microelectromechanical Piezoresistive Pressure Sensor

The research toward high-performing pressure sensors has been going on for more than two decades, with the goal of improving key parameters, namely the high gauge factor (GF) and device stability for future applications. In the present work, the piezoresistivity of the polycrystalline molybdenum disulfide (MoS2) is harnessed for pressure sensing applications with very low noise levels. The fabricated microelectromechanical systems (MEMS) pressure sensor exhibits a high GF of ~92 with pressure sensitivity of ~ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.46 \mu \text{A}$ </tex-math></inline-formula> /Pa and a low nonlinearity of ~12% in the applied pressure range 0–20 kPa. This exceptional performance is explained based on fluctuation-induced tunneling in the polycrystalline MoS2-based pressure sensor. The tunneling barrier between two grains gets modified with the application of external pressure. Furthermore, the noise analysis of the fabricated MEMS pressure sensor shows that the noise level gets altered with the applied stress due to the modified barrier potential.

Enhanced thermoelectric properties of polycrystalline CuCrS2−x Se x (x = 0, 0.5, 1.0, 1.5, 2) samples by replacing chalcogens and sintering

The optimization of thermoelectric properties of the CuCrSSe x (x = 0, 0.5, 1.0, 1.5, 2) samples was achieved by substitution in anionic sublattice and sintering at high temperature. The maximum power factor PF ∼ 0.3 mW (m·K)−2 among a series of samples with chalcogen substitution was obtained for CuCrS0.5Se1.5 sample at T = 300 K. The sintering made it possible to obtain the maximum value PF ∼ 2.1 mW (m·K)−2 for CuCrSe2 sample. This is due to a more than threefold increase in the thermopower S(T) in CuCrSe2 sample with a spin-orbital interaction in comparison with CuCrS0.5Se1.5 sample with the same optimal electrical conductivity σ ( 100 S cm−1), but without spin-orbital interaction. In CuCrSe2 sample, sintering effectively reduced the σ to an optimal value, suppressed of the magnetic phase transition in the range of 50–100 K, and the weak localization were replaced by weak antilocalization indicating the appearance of strong spin-orbit interaction below 20 K. As a result, an additional contribution to the S(T) appeared due to the filtration of current carriers caused by the strong spin-orbit interaction. The effect of grain boundaries on the properties σ and S(T) of the samples was investigated. It was established that polycrystalline samples with a high sulfur content were low-conductivity materials consisting of high-conductivity crystallites with the charge carriers concentration cm−3 separated by low-conductivity grain boundaries with fluctuation-induced tunneling conductivity. Both the replacement of sulfur with selenium and sintering led to a decrease in the energy barriers connecting grain boundaries. Selenium-dominated samples (CuCrS0.5Se1.5 and CuCrSe2) had high electrical conductivity with negligible energy barriers between grain boundaries. Logarithmic quantum corrections to the electrical conductivity was observed below 20 K, which indicated a quasi-two-dimensional electron transport in these samples.

Effect of Oxygen Functional Groups in Reduced Graphene Oxide-Coated Silk Electronic Textiles for Enhancement of NO2 Gas-Sensing Performance.

An electronic textile-based NO2 gas sensor was fabricated using commercial silk and graphene oxide (GO). It showed a fast response time and excellent sensing performance, which was simply accomplished by modifying the heat-treatment process. The heat treatment was conducted at 400 °C and different heating rates of 1, 3, and 5 °C/min. Compared with our previous research, the response time significantly decreased, from 32.5 to 3.26 min, and we found that the highest response was obtained with the sensor treated at a heating rate of 1 °C/min. To find the reason for this enhanced sensing performance, the morphology, structure, and chemical composition of the reduced GO (rGO) were investigated, depending on the thermal treatment process, using scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. We also measured the temperature-dependent resistance of rGO, which was well described by the fluctuation-induced tunneling (FIT) model. These results revealed that the rGO thermally treated with 1 °C/min of heating rate had the largest amount of oxygen groups. This means that the oxygen functional groups play an important role in NO2 gas-sensing performance.

Electrical and thermal properties of epoxy composites filled with carbon nanotubes and inorganic particles

The electrical and thermal conductivity of the ternary epoxy composites (CMs) with two-component fillers, multiwall carbon nanotubes (MWCNT)/TiO2, and MWCNT/carbonyl iron (Fe) have been investigated. The increase of the percolation threshold was found for the ternary CMs compared to MWCNT/epoxy CMs. At MWCNT content higher than 3 wt.%, the conductivity of the ternary CMs is much higher than in MWCNT/epoxy. The temperature dependencies of the electrical resistivity were analyzed within the fluctuation-induced tunneling conductivity model. It was found that adding of two-component fillers MWCNT/TiO2 or MWCNT/Fe into epoxy promotes smaller changes in thermal conductivity compared to the two-phase MWCNT/epoxy composites.

Electric Transport in Gold-Covered Sodium-Alginate Free-Standing Foils.

The electric transport properties of flexible and transparent conducting bilayers, realized by sputtering ultrathin gold nanometric layers on sodium–alginate free-standing films, were studied. The reported results cover a range of temperatures from 3 to 300 K. In the case of gold layer thicknesses larger than 5 nm, a typical metallic behavior was observed. Conversely, for a gold thickness of 4.5 nm, an unusual resistance temperature dependence was found. The dominant transport mechanism below 70 K was identified as a fluctuation-induced tunneling process. This indicates that the conductive region is not continuous but is formed by gold clusters embedded in the polymeric matrix. Above 70 K, instead, the data can be interpreted using a phenomenological model, which assumes an anomalous expansion of the conductive region upon decreasing the temperature, in the range from 300 to 200 K. The approach herein adopted, complemented with other characterizations, can provide useful information for the development of innovative and green optoelectronics.

Tunneling conduction mechanisms in strontium ferromolybdate ceramics with strontium molybdate dielectric intergrain barriers

This work is a contribution to the understanding of the electrical resistivity in strontium ferromolybdate (Sr2FeMoO6-δ, SFMO) ceramics. It demonstrates that an appropriate thermal treatment leads to the formation of dielectric SrMoO4 shells at the surface of SFMO nanograins. In samples without SrMoO4 shells, the sign of the temperature coefficient of resistance changes with increasing temperature from negative at very low temperatures to positive at higher temperatures. Samples exhibiting a negative temperature coefficient contain SrMoO4 shells and demonstrate a behavior of the resistivity that can be described in terms of the fluctuation-induced tunneling model, and near room temperature the conductivity mechanism converts to a variable-range hopping one. The results of this work serve as a starting point for the understanding of the low-field magnetoresistance which is very promising for spintronic device application.

Thermo-resistive and thermo-piezoresistive sensitivity of carbon nanostructure engineered thermoplastic composites processed via additive manufacturing

We experimentally examine the thermo-resistive and thermo-piezoresistive sensitivity of multiwall carbon nanotube (MWCNT)/polypropylene random copolymer (PPR) nanocomposites processed via fused filament fabrication (FFF) process. The filament feedstocks were fabricated by melt blending of neat PPR with a predetermined amount of MWCNTs (either 4, 6 or 8 wt%) using a twin-screw extruder. Thermo-resistive characteristics of MWCNT/PPR composites were measured under both constrained and unconstrained heating from approximately 30-100 °C. For all MWCNT concentrations considered here, negative temperature coefficients of resistivity (TCR) were observed for both constrained and unconstrained heating, as a consequence of thermal fluctuation-induced tunneling at MWCNT junctions. The highest thermo-resistive sensitivity was measured for the composite with the lowest MWCNT concentration (4 wt%) under unconstrained conditions, reporting a TCR of −12,800 × 10−6/°C, which is higher in magnitude than that of other polymer nanocomposites reported in the literature. Moreover, the MWCNT/PPR composites exhibit strong thermo-piezoresistive response under tensile loading. For 4 wt% MWCNT loading, the gauge factor (measured over 0–20% strain range) of the composite increased from 27.8 to 52.3 when the temperature was raised from 30 °C to 60 °C. Our results further evince higher thermo-piezoresistive sensitivity i.e., a gauge factor as high as 395 at 60 °C. The electron tunneling and hopping, both thermally-assisted and activated by mechanical deformation of the PPR matrix, significantly increase the thermo-piezoresistance with the increase in temperature in this range. The excellent thermo-resistive and thermo-piezoresistive characteristics of MWCNT/PPR composites reported in this study would enable the development of smart nanocomposites for self-sensing both temperature and strain/damage state.

Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks.

Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17-1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron-hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (τ ∝ (E - EC)s, s = -1, EC being the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.

Charge transport in pyroprotein-based electronic yarns.

Pyroprotein-based carbon materials produced by heat-treating silk proteins have many potential applications in electronic devices, such as electronic textiles. To further develop potential electronic devices using these pyroproteins, the charge transport mechanism has to be verified. However, the electrical characteristics of the pyroproteins have not been reported yet. In this study, the temperature-dependent charge transport behavior of pyroprotein-based electronic yarns prepared from commercial silks (e-CS yarns) is investigated with respect to various heat treatment temperatures (HTT, 800, 1000, 1200, and 1400 °C). The linear current-voltage properties are shown at a low bias of 100 nA from 9 K to 300 K. The temperature-dependent resistivity of the e-CS yarns can be clearly described by the crossover of 3-dimensional Mott variable range hopping and fluctuation-induced tunneling conduction at the crossover temperature (Tc). These Tc factors are significantly different, due to the structural modulation of the e-CS yarns depending on the HTT, and are characterized by Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. This study is expected to provide a better understanding of the electrical properties of pyroproteins.

Commercial Silk-Based Electronic Yarns Fabricated Using Microwave Irradiation.

Electronic textiles (e-textiles) are being developed because of their potential applications in wearable and flexible electronics. However, complex procedures and chemical agents are required to synthesize carbon-based e-textiles. Pyroprotein-based e-textiles, obtained by the pyrolysis of silk proteins, consume large amounts of time and energy due to the high-temperature process (from 800 to 2800 °C). In this study, we report a novel method of fabricating pyroprotein-based electronic yarns (e-yarns) using microwave irradiation. Microwaves were applied to pyroprotein treated at 650 °C to remove numerous heteroatoms in a short time without the high-temperature process and chemical agents. The structural modulation was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy. We found a reduction in heteroatoms and enlargement of the carbon region. The temperature-dependent resistance was well explained by the fluctuation-induced tunneling model, which also showed structural modification. The electrical conductivity of the fabricated e-yarns was comparable to that of pyroprotein-based e-textiles heat-treated at 1000 °C (order of 102 S/cm) and showed electrical stability under bending.

Low Temperature Electrical Transport Studies of the Conducting Polymer Versicon&amp;amp;trade;

Thermal analysis and low temperature D.C. electrical transport measurements of the conducting polymer Versicon™ were carried out between 20 K and 300 K. The material was found to be stable up to 498 K (225°C), with a glass transition at 210 K (-63°C), and a crystalline transition at 436 K (163°C). The electrical resistivity data best fitted the Fluctuation Induced Tunneling (FIT) model, suggesting that at low temperatures, the electron transport is by tunneling through thermally modulated barriers. The high temperature data best fitted the thermally activated hopping model, with an activation energy of 0.015 eV, suggesting that the thermally activated hopping may be a parallel transport process to fluctuation induced tunneling, becoming dominant at higher temperatures. From the FIT model the inter-particle distance was estimated to be 12 Å. The electrical transport results were also consistent with the assertion that Versicon™ forms spherical aggregates, creating conducting pathways even in an insulating matrix.

Temperature-Dependent Charge Transport in Polymer-Sorted Semiconducting Carbon Nanotube Networks with Different Diameter Distributions

The availability of purely semiconducting single-walled carbon nanotube (s-SWCNT) dispersions has prompted their widespread application in solution-processed thin-film transistors with excellent device performance but has also raised the question of how their precise composition influences charge transport properties in random networks. Here, we compare hole and electron transport in three different polymer-sorted s-SWCNT networks from nearly monochiral (6,5) nanotubes (diameter 0.76 nm) to mixed networks of s-SWCNTs with medium (0.8–1.3 nm) and large (1.2–1.6 nm) diameters. Temperature-dependent field-effect mobilities are extracted from gated four-point probe measurements that exclude any contributions by contact resistance and indicate thermally activated transport. The mobility data can be fitted to the fluctuation-induced tunneling model, although with significant differences between the network compositions. The network with the broadest diameter and thus bandgap range results in the strongest tempe...

Electron Transport and Piezoresistive Effect in Single-Walled Carbon Nanotube Films on Polyethylene Terephthalate Substrates

The paper presents the experimental results on temperature dependences of electrical resistance of disordered single-walled carbon nanotube (SWNT) films on polyethylene terephthalate (PET) substrates and discusses the piezoresistive effect studied in the films within the strain ranging from –0.15% to +0.15%. The nanotubes were prepared by catalytic disproportionation of carbon monoxide on Fe particles obtained by ferrocene vapor decomposition. SWNT films were prepared by their in situ deposition on silicon substrates and transferred to PET substrates. Electron transport properties were studied from room temperature down to 77.4 K. It is shown that the experimental data are described by the fluctuation-induced tunneling conduction model. The effective activation energy estimated by approximating experimental data varies from 175 meV to 6.5 meV for the samples with the time of nanotube deposition varying from 5 min to 120 min, respectively. The strain gauge factor measured in the film with the smallest sheet electrical resistance appeared to be negative and equal to –14.