NH3 Flow Research Articles

Influence of NH3 flow rate on the photoelectric properties of high Al content p-AlGaN.

High Al content (60%) p-AlGaN with different NH3 flow rates was grown using metal-organic chemical vapor deposition (MOCVD), and changes in its photoelectric properties were studied using the Hall effect tester (Hall) and cathodoluminescence (CL) spectrometer. The results show that the film resistivity increases from 3.8 Ω·cm to 46.5 Ω·cm with increasing NH3 flow rate. The impurity peak intensity of p-AlGaN grown under high NH3 flow conditions is particularly high, indicating numerous point defects. The results of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) show a large number of Ga interstitial atoms (Gai) at the interface. As Gai acts as a donor, this may be the main reason for the increase in resistivity. And under high NH3 flow conditions, a lattice distortion and a high density of dislocation occur between p-AlGaN and p-GaN, which can lead to enhanced carrier scattering and decreased mobility. Additional validation via LED growth experiments indicates that the luminescence intensity of samples with low ammonia concentration increased by more than 13000 times.

Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy

We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.

Effect of NH3 flow rate to titanium nitride as etch hard mask in thermal atomic layer deposition

Effect of NH3 flow rate to titanium nitride as etch hard mask in thermal atomic layer deposition

Lower‐Temperature Synthesis of Nitrogen‐Rich Molybdenum Nitride/Nickel (Cobalt) Heterojunctional Assembly for the Effective Water Electrolysis

AbstractThe nitrogen‐rich molybdenum nitrides (N/Mo > 1) are promising for water electrolysis due to their increased activity and antioxidant ability. However, a higher temperature is needed in the usual synthesis for introducing more N, leading to the formation of large particles and the difficulty in controlling the morphology, thus limiting their catalytic performance. Here, a new strategy is reported based on the synergy of internal/external N sources (INS and ENS) toward Mo5N6‐based catalysts at a decreased temperature of 450 °C. The PMo12 clusters and Ni2+ (Co2+) are first combined with 2‐methylimidazole/melamine (INS) to give a flower‐like assembly. The subsequent pyrolysis under NH3 flow (ENS) gives the flowers composed of small Mo5N6/Ni (Co) heterojunctional particles that can expose more surface sites with an optimized electronic structure. The Mo5N6/Ni exhibits good HER activity close to Pt/C, and Mo5N6/Co shows superior OER performance to IrO2. The Mo5N6/Ni||Mo5N6/Co cell drives overall water splitting (OWS) at a low voltage of 1.397/1.74 V to achieve a current density of 10/100 mA cm−2 in the 1.0 M KOH. An anion exchange membrane water electrolyzer (AEMWE) based on the catalysts can achieve a current density of 450 mA cm−2 at 1.8 V with a long‐term stability of 120 h.

ZIF-8 derived iron-, sulphur-, and nitrogen-doped catalysts for anion-exchange membrane fuel cell application

This study presents the preparation of tridoped Fe, N, S carbon-based catalysts using ZIF-8 as the main carbon source and iron(II)acetate, 1,10-phenanthroline, ammonia gas and thiourea as precursors for Fe, N and S elements. Thiourea was mixed via planetary ball-milling with a Fe–N–C catalyst prepared by inert gas pyrolysis, and different pyrolysis conditions were applied thereafter. The main goal of the work is to synthesise active non-precious metal electrocatalysts for oxygen reduction reaction (ORR). High electrocatalytic ORR activity in alkaline media was observed for the two materials obtained after thiourea addition and subsequent pyrolysis. Physico-chemical characterisation revealed successful S- and N-doping for all three catalysts with enhanced porosity for the two materials that were subjected to additional pyrolysis after the thiourea addition. The sulphur doping was highest for the FeNSC3 material that was subjected to a second pyrolysis in N2 and a third pyrolysis in NH3, compared to the FeNSC2 material that was subjected to a single pyrolysis in NH3 flow after thiourea addition. The ORR activity of FeNSC2 with half-wave potential of 0.88 V was slightly higher than that of FeNSC3, and the former was selected for evaluation as a cathode catalyst in an anion-exchange membrane fuel cell.

Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution

In present paper an innovative technique to reproduce the epitaxial growth results through lateral flow metal organic chemical vapor deposition (MOCVD) reactor process at atomistic scale is reported. It includes the equivalent MOCVD reactor geometry architecture of AIXTRON 200/4 RF-S horizontal flow reactor. The gas- and surface phase chemical reaction kinetics and thermodynamics are given due consideration in the present study without use of any continuum or fluid dynamics models. The optimum conditions are extracted by running design of experiments over TNL-EpiGrow simulator to achieve high crystalline quality aluminum nitride (AlN) films over Si (111) substrate. The impact of variation in precursor NH3 flow rates and carrier gas N2 pressure are used to predict the conditions to optimize the improved morphology and quality of the AlN films. The defects densities are characterized in terms of vacancies and dislocation densities. The roughness and lattice parameters are extracted. The growth rates obtained in present studies are compared against reported the similar experiments. The excellent agreement is observed between experimental and simulated results. The dislocation densities in grown samples are also found in good agreement with the similar experimental reported densities in each sample.

Control of nitrogen defects in carbon nanotubes for self-powered memristive systems

Recent studies show that the additional introduction of heteroatoms into the structure of CNTs makes it possible to change their electronic and physical properties [1]. Of great interest is the process of doping CNTs with nitrogen atoms [2]. The introduction of nitrogen defects into a lattice of carbon atoms makes it possible to modify the CNT structure up to the demonstration of anomalous properties that are not appropriate for this material [3]. It has been shown that multi-walled N-CNTs can exhibit memristive and piezoelectric properties [4]. The parameters of CNTs during synthesis can be controlled by the plasma enhanced chemical vapor deposition (PECVD) method. The addition of ammonia (NH3) to the carbonaceous gas in the PECVD process allows CNTs to be doped directly during growth. At the same time, the dopant concentration and the type of nitrogen defects have a significant effect on the properties of CNTs. The memristive properties of CNTs have already been sufficiently studied [5], however, for their application in self-powered systems, additional studies of the parameters of the piezoelectric module of N-CNTs are required. The aim of this work is to study the effect of ammonia flow on the concentration, type of nitrogen defects, and the value of the piezoelectric modulus during growth of CNTs by the PECVD. Silicon (100) substrates were used as samples with films of a buffer (Mo, 100 nm) sublayer and a catalytic layer (Ni, 15 nm). CNTs were grown at a temperature of 550 °C in an atmosphere of acetylene (C2H2, 35 sccm) and NH3. The C2H2 flow was kept constant, while the NH3 flow was changed in the C2H2:NH3 ratio from 1:1 to 1:10. Based on the obtained SEM images, it was found that with an increase in the ratio of C2H2:NH3 flowes, an increase in the density of nanotubes in the array were observed. This occurs due to more active growth of N-CNTs on small nickel catalytic centers due to the accelerated process of hydrogen desorption and its binding with ions in ammonia plasma, which leads to an increase in the growth rate of nanotubes on smaller catalytic centers. Thus, the area of the catalytic center is one of the limiting factors of the growth rate and allows one to control the aspect ratio and density of CNTs in the array. An analysis of the XPS spectra showed that with an increase in the ratio of C2H2:NH3 flows from 1:1 to 1:10, a nonlinear change in the concentration of the nitrogen dopant in N-CNTs from 8.4 to 12 at % is also observed. This led to a nonlinear change in the piezoelectric modulus of nanotubes from 8.7 to 20.6 pm/V and a change in their memristive properties. It has been established that an increase in the concentration of doping nitrogen leads to an increase in the piezoelectric modulus of N-CNTs, which is the source of the memristive effect. The obtained results can be used in the development of energy-efficient piezoelectric nanogenerators based on an array of vertically aligned N-CNTs for autonomous memristive systems.

Capture of NH3 using air plasmas to form NH4NO3 for N recycling: Impact factors and mechanisms

Ammonia loss results in significant resource waste and environmental pollution. In this study, we proposed and explored the way of using air plasmas to capture NH3 to form NH4NO3 for N recycling under different reaction modes, discharge powers, and gas flow rates. The reaction mechanisms under different modes were also revealed. A needle-needle discharge driven by AC power was used and ammonia gas was utilized to simulate the volatilized ammonia. Notably, white particles were observed during Mode 1 and Mode 2 (these particles gradually disappeared over time in Mode 2), while no particles or significant NOx were detected in Mode 3 throughout the process. The quantitative NH4NO3 yield was significantly influenced by discharge power and NH3 flow rate, reaching its highest value in Mode 1 at 24 W and 20 sccm in this investigation. Directly mixing the air discharge products with NH3 in Mode 1 under the threshold decomposition temperature of NH4NO3 leads to the stable formation of NH4NO3. Discharging in the NH3/air mixture will inhibit the generation of NOx and further restrain the NH4NO3 formation in Mode 2 and 3. Additionally, the temperature rises during discharge and also decomposes NH4NO3, resulting in unstable NH4NO3 formation in Mode 2.

Ammonia/syngas MILD combustion by a novel burner

Ammonia has received increasing attention as one of the most attractive energy carriers because of its carbon-free nature and the established reliable and economic infrastructure for its storage and distribution. However, the low burning velocity and nitrogen-containment of pure NH3 can cause some challenges for its combustion control such as flame instability and large NOx emissions. To overcome these issues, strategies of co-burning NH3 with highly reactive fuels such as CH4 or H2 have been developed and applied. Syngas, which can be produced from biomass pyrolysis, is a promising alternative fuel in the transition from carbon-based fuels to carbon-free fuels. Therefore, comparing to co-firing NH3 with CH4, co-firing NH3 with syngas is a better environmentally friendly option to improve the NH3 combustion property. However, co-firing NH3 with syngas faces severer combustion instability, NOx emissions and NH3 leakage due to the low heating value of syngas. To the best of the authors’ knowledge, the NH3/syngas combustion with low NOx emissions and zero NH3 leakage has not been achieved in a lab-scale combustor. In the present study, NH3/syngas MILD combustion was carried out in a novel burner developed in our previous work. In the novel burner, the high-temperature and diluted air produced by the lean premixed syngas combustion is the key to accomplish the MILD combustion of NH3. The impact of the temperature and O2 mole fraction of the HTDA on the emissions of NO, NO2, N2O, NH3, and CO was experimentally investigated with varying equivalence ratios and NH3 flow rates. The chemical reactor network was employed to analyze the experimental observation from the chemical kinetic aspect.

Properties of SiCN Films Relevant to Dental Implant Applications.

The application of surface coatings is a popular technique to improve the performance of materials used for medical and dental implants. Ternary silicon carbon nitride (SiCN), obtained by introducing nitrogen into SiC, has attracted significant interest due to its potential advantages. This study investigated the properties of SiCN films deposited via PECVD for dental implant coatings. Chemical composition, optical, and tribological properties were analyzed by adjusting the gas flow rates of NH3, CH4, and SiH4. The results indicated that an increase in the NH3 flow rate led to higher deposition rates, scaling from 5.7 nm/min at an NH3 flow rate of 2 sccm to 7 nm/min at an NH3 flow rate of 8 sccm. Concurrently, the formation of N-Si bonds was observed. The films with a higher nitrogen content exhibited lower refractive indices, diminishing from 2.5 to 2.3 as the NH3 flow rate increased from 2 sccm to 8 sccm. The contact angle of SiCN films had minimal differences, while the corrosion rate was dependent on the pH of the environment. These findings contribute to a better understanding of the properties and potential applications of SiCN films for use in dental implants.

Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates. The key parameter was the NH3 flow, which affects the roughness, growth rate, crystal quality, and impurities. Most parameters show a trend reversal at a V/III ratio around 500 and show either a maximum, such as the growth rate, the sizes of hexagonal hillocks on low misorientations, the yellow luminescence and the mobility, or show a minimum such as the FWHM in X-ray diffraction, the carrier concentration, the surface roughness of large misorientations, or the blue (430 nm) luminescence. This suggests that around a V/III ratio of 500, the surface changes from a Ga-terminated Ga-adlayer surface to a N-terminated 3N-H(2×2) surface. Using extremely low V/III ratios, a smooth N-polar GaN was obtained even on the standard 0.2° misorientation. However, good crystalline quality, low oxygen impurities and smooth surfaces together seem too challenging with low misorientation. The strain-dependent band edge shifted by 14 eV for strain along [0001], which is close to the values reported by Ga-polar GaN.

High-performance 2D WS2 photodetector enhanced by charge-transfer doping through NH3 annealing

Transition metal dichalcogenides (TMDs) are potential candidates towards the next-generation photodetector, owing to their tunable energy bandgap and strong light–matter interaction. However, the low charge-carrier mobility and insufficient quantum efficiency of TMDs-based devices restrain their optoelectronic performances. Therefore, an effective and facile doping method needs to be developed for overcoming their poor optoelectronics properties. Here, we demonstrate a controllable nondegenerate n-doping technique for 2D TMDs materials by annealing under NH3 flow. The on/off current ratio and field-effect mobility of the device after annealing treatment increases about 2 orders of magnitude and 23 times, respectively. We attribute this remarkable doping effect to the physical adsorption and chemical adsorption of NH3 as well as the associated formation of isolated sulfur vacancies, which is dynamically activated during the annealing treatment, and further verified by the atomic-scale characterization and density functional theory calculations. The annealing temperature and time present a controllable modulation on the electron doping levels of the WS2 channel. The fabricated WS2 photodetector can operate in a broad range of visible light at room temperature. At 532 nm wavelength, the responsivity of 2.97 A/W, external quantum efficiency of 699% and specific detectivity of over 1010 Jones indicate its great potential in sensitive and power-efficient photodetectors. Our results provide an effective method to realize controllable n-doping of 2D materials, aiming for fabricating high-performance 2D photodetectors.

Multiple-objective optimization on ammonia decomposition using membrane reactor

Ammonia plays a key role in the renewable hydrogen economy nowadays, thus, the efficiency of ammonia decomposition for hydrogen production becomes an important research topic. In this study, a numerical model was built to study the performance of ammonia decomposition using a membrane reactor and Ru/Al2O3 catalyst under various operating conditions such as feed NH3 temperature and volume flow rate as well as retentate side pressure. The reactor performance was characterized by ammonia conversion, hydrogen recovery, and recovered hydrogen flow rate. Pre-exponential factor and activation energy of ammonia reaction rate were obtained by equilibrium conversion and two-step parametric sweeping. It was found that ammonia conversion can be increased by about 33% compared to a conventional fixed-bed reactor under the same operating conditions. H2 recovery can be enhanced when the reactant inlet temperature and the pressure difference between the retentate and permeate sides increase. The increase in feed NH3 flow rate (gas hourly space velocity, GHSV) decreased the ammonia conversion and H2 recovery. An optimum GHSV that results in a maximum recovered H2 flow rate can be found. Finally, optimum operation conditions for maximizing the hydrogen recovery and recovered hydrogen flow rate were analyzed using the multi-objective Non-dominated sorting genetic algorithm-II (NSGA-II). It was found that maximum H2 recovery with a value of 79.7% can be obtained under the conditions of inlet temperature of 336 °C, GHSV of 900 h−1, and retentate side pressure of 9.9875 bar. The maximum recovered hydrogen flow rate with a value of 9.55×10−14(mol·s−1) can be obtained under the conditions of an inlet temperature of 394 °C, GHSV of 1315 h−1, and retentate side pressure of 9.9879 bar.

SiNx Coating Deposition on CoCr by Plasma-Enhanced Chemical Vapor Deposition

AbstractCobalt chromium alloys (CoCr) are commonly used as total disc replacement components. However, there are concerns about its long-term biological effects. Coating the CoCr with a ceramic could improve the implant’s biocompatibility and wear resistance. Silicon nitride (SiNx) coatings have emerged as a recent alternative to this end. While many have evaluated physical vapour deposition (PVD) techniques to deposit these coatings, plasma-enhanced chemical vapour deposition (PECVD) may provide certain advantages. For example, it may allow for low-temperature depositions as well as more uniform coatings of complex structures. In this study, silicon nitride (SiNx) coatings with different nitrogen-to-silicon (N/Si ratio) compositions (0.65, 1.16 and 1.42) were deposited onto CoCr substrates by PECVD. It was found that the SiNx coating deposited at an NH3 flow rate of 30 sccm (i.e., N/Si ratio of 1.42), had the highest hardness and elastic modulus, 13.19 ± 1.29 GPa and 132.76 ± 9.32 GPa, respectively. While a coating roughness adequate for the application could be measured, further optimization of the coating adhesion is needed to adequately evaluate its wear properties. It was concluded that the PECVD SiNx coating deposited at an NH3 flow rate of 30 sccm showed the highest potential for the intended application.

Study on the Preparation and Morphology Mechanism of Micron‐Sized Hexagonal Flake Basic Zinc Chloride (Zn5(OH)8Cl2·H2O) by Ammonia Precipitation Method

AbstractThe chemical formula of basic zinc chloride is Zn5(OH)8Cl2 · H2O (denoted as ZHC). It is a new type of zinc source additive, widely used in the feed industry. In this article, micron‐sized hexagonal flake ZHC with a diameter of 10–60 µm is directly prepared by ammonia precipitation method using ZnCl2 as raw material. The products are characterized and analyzed by X‐ray diffraction, scanning electron microscopy, and laser particle size analyzer. The effects of reaction temperature, ammonia flow rate, aging time, and reactant concentration on the product morphology are studied. Under the optimum reaction conditions, the ZnCl2 concentration is 2.0 mol L−1, NH3 flow rate is 300 mL min−1, the reaction time is 1 h, the reaction temperature is 80 °C, and the aging time is 5 h. Lastly, the yield reaches 49.06%. The growth habit of ZHC is theoretically analyzed by the Morphology program. The calculation results are in good agreement with the experimental results. The change of (003) crystal plane exposure caused by temperature is an important reason for the non‐ideality of macroscopic morphology.

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of InN was performed to explore the growth parameter space of the horizontal one-dimensional InN quantum wire-like structures on miscut substrates. The InN growth temperature, InN thickness, and NH3 flow during growth were varied to determine optimal quantum wire segment growth conditions. Quantum wire segment formation was observed through AFM images for N-polar InN samples with a low growth temperature of 540 °C and 1–2 nm of InN. Below 1 nm of InN, quantum dashes formed, and 2-D layers were formed above 2 nm of InN. One-dimensional anisotropy of the electrical conduction of N-polar InN wire-like samples was observed through TLM measurements. The sheet resistances of wire-like samples varied from 10–26 kΩ/□ in the longitudinal direction of the wire segments. The high sheet resistances were attributed to the close proximity of the treading dislocations at the InN/GaN interface and might be lowered by reducing the lattice mismatch of InN wire-like structures with the substrate using high lattice constant base layers such as relaxed InGaN.

Optimizing HVPE flow field to achieve GaN crystal uniform growth

In the process of large size GaN crystal growth by hydride vapor phase epitaxy (HVPE), whether the parameters of reactants or the structure of the reactor are changed, the crystal growth is affected by the flow rate and concentration of reactants at different positions in the reactor, namely the flow field in the reactor. Therefore, the crystal quality is very sensitive to the flow field distribution in the reaction chamber. In this paper, the simulation software COMSOL Multiphysics is used to simulate the flow field in the horizontal HVPE reaction chamber. The results show that gravity has an important influence on the uniformity of GaCl and NH3 concentrations on the substrate surface. The method of improving the concentration uniformity of GaCl and NH3 on the substrate surface by changing the different dip angles of the substrate was studied, and the substrate dip angles corresponding to the optimum uniformity of GaCl and NH3 flow fields in HVPE system were obtained. The results were applied to the actual growth, and 2 inch GaN crystals with uniform growth thickness were obtained.

Tantalum oxynitride nanotube film arrays for unconventional nanostructured photo-electrodes active with visible light

Tantalum-oxy-nitride nanotubes (TaOxNy NTs) ordered in 1D were successfully synthesized through controlled anodic oxidation of metallic Ta foils followed by high-temperature annealing under NH3 flow to prepare unconventional nanostructured photo-electrodes active with visible light. For the synthesis, a two-step anodization process was adopted: i) the first step in ethylene glycol with 0.33 % NH4F and 3 % H2O, ii) the second step in H2SO4 (98 %) with 1 % HF and 4 % H2O, by applying different voltages and anodization times. Scanning Electron Microscopy integrated with Energy Dispersive X-ray spectroscopy (SEM-EDX) revealed the NTs length ranging from 2 to 5 µm, and the inner tube diameter from 20 to 100 nm, in good correlation with the synthesis parameters. The N-content (from 2.7 % to 19.1 %) was dependent on the nitridation temperature (from 500° to 900°C), and the conversion of bare Ta2O5 into TaOxNy strongly influenced the absorption in the visible region with a bandgap shift from 4.0 to 2.1 eV, respectively. Photo-electrochemical and catalytic performances were evaluated with chronoamperometric measurements and tests in different photo-reactions using AM 1.5 G simulated sunlight: (i) degradation of methylene blue (MB), (ii) ethanol gas-phase photo-reforming and (iii) bias-assisted photoelectrochemical water splitting. The TaOxNy NTs film-type electrode obtained by nitriding at 800 °C showed the highest photocurrent value (0.1 mA∙cm-2), and the highest rates of MB degradation (k1 of 0.0189 min-1) and H2 photo-production.

Preparation of thick dense ceramic films of dielectric BaTaO2N through electrophoretic deposition

Sintering of the ferroelectric perovskite oxynitride, BaTaO2N is still a big challenge, because nitrogen is partially released from the crystal lattice during high-temperature sintering. Post-sintering annealing under an NH3 flow is essential in order to compensate for this nitrogen loss and to recover the electrically insulating properties of the ceramic. However, fully densified bulk ceramics are nitrided only on their outer surface, while their interior remains semiconducting. In this work, thick ceramic films of the perovskite oxynitride with a high relative density close to 90% were fabricated using electrophoretic deposition and high-temperature sintering. The nitrogen loss was fully recovered during annealing under an NH3 flow, owing to the thickness of the sintered films being less than 100 μm. After annealing, the BaTaO2N ceramics consisted of 200 nm-sized particles with a dense microstructure. This is the first report of the fabrication of BaTaO2N ceramics with a relative density of 89%. The dielectric constant and dielectric loss were approximately 320 and 0.05 at 1 MHz, respectively.

Combustion optimization of a coal-fired power plant boiler using artificial intelligence neural networks

This study establishes detailed neural network modeling procedures for the combustion optimization of a power generation unit, equipped with a Selective Catalytic Reduction (SCR) system. In particular, artificial intelligence neural networks were applied due to its capability in treating large pools of data of great nonlinearity. The objective of this study was to reduce nitrogen oxide (NOx) emissions in the stack gas, lower the cost of emissions compliance and minimize the net unit heat rate at this power generation unit at full-load conditions. These procedures include building a database with real coal power plant operating data, modeling the database and using the genetic algorithm to optimize the operating conditions. The operation is optimized with respect to the steam temperature, selective catalyst reactor, and separated over-fire air conditions. Verifications of the results demonstrated that by carrying out the reported study, the pollutant concentrations of the boiler are significantly decreased and the catalyst layer is effectively preserved, while the operation can be maintained stable near the full-load condition. It was found that the average ammonia (NH3) flow to the SCR under optimized conditions was 229 kg/h, while the average NH3 flow under non-optimal operational conditions was 260 kg/h, resulting in a reduction in NH3 consumption of approximately 12 % from the non-optimized operational condition. In the meantime, the SCR inlet (boiler exit) NOx was reduced from 523 mg/Nm3 (non-optimized operational condition) to 444 mg/Nm3 (optimized operational condition), which represent about 15 % reduction. Based on the experience with SCR from manufactures and operators, the SCR catalyst life expectancy has a direct relationship with the SCR inlet NOx concentration and NH3 injection rate. The lower the NOx concentration at the SCR inlet and the less the NH3 injection rate, the longer of the SCR catalyst life will be. Thus, it is expected that the SCR catalyst layer replacement frequency could be reduced by 10 to 20 % over the normal catalyst replacement cycle, while meeting the same environmental NOx emissions limit. Additionally, a Delta Heat Rate was also calculated using best available data from the optimized operational conditions, including boiler load, boiler excess oxygen (O2), fly ash unburned carbon and attemperation flow. Results were compared with the average Delta Heat Rate calculated from baseline tests. It was found that the average Delta Heat Rate from baseline tests are −60 kJ/kWh, while the delta heat rate from the optimized operation condition hours is −118 kJ/kWh. This represents about 0.57 % improvement on unit heat rate from the baseline average.