Flip-chip Light-emitting Diodes Research Articles

Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes

Abstract Distributed Bragg reflectors have been widely utilized in GaN-based flip-chip light-emitting diodes (FCLEDs) owing to their excellent reflection performance. Recently, wide reflected angle DBR (WRA-DBR) has been suggested to enhance the optical characteristics of GaN-based FCLEDs by incorporating multiple sub-DBRs with varying central wavelengths. However, the reflectivity of WRA-DBR decreases at large incident angle from 425 nm to 550 nm, which restricts further optical performance improvement of FCLEDs. Here, we demonstrate a quintuple-stack DBR comprised of five sub-DBRs. The quintuple-stack DBR possesses a high reflectivity (>97.5%) for incident angles below 50° within the blue and green light wavelength ranges. Compared to WRA-DBR, quintuple-stack DBR exhibits a higher reflectivity in wavelength range of 425 nm to 550 nm and thinner multilayer thicknesses. Furthermore, stronger electric field intensities exist in the top facet and sidewalls of FCLED with quintuple-stack DBR, revealing that quintuple-stack DBR is beneficial for enhancing the light extraction efficiency. As a result, the light output power of FCLED with quintuple-stack DBR is ~3% higher than that of FCLED with WRA-DBR at 750 mA.

Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode

Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm.

Temperature-Dependent Efficiency Droop in GaN-Based Blue Micro Light-Emitting Diodes

This work investigates the size-dependent decrease in external quantum efficiency (EQE) of various InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ-LEDs) of sizes from 10 × 10 μm2 to 250 × 250 μm2 and proposes that the temperature-dependent efficiency droop is the main mechanism for decrease in EQE with reducing dimensions for well-passivated μ-LEDs. Experimental results show that the EQE increases with reducing μ-LED sizes to 50 × 50 μm2. However, the EQE decreases as the μ-LED size is further reduced to 10 × 10 μm2. The measured current-voltage characteristics, the minimum ideality factor, the light-emission patterns by the photon-emission microscope, and the transmission-electron-microscopy images consistently reveal that the decreased EQE of the smallest sized μ-LED is not due to the sidewall leakage: the decreased EQE is rather caused by the temperature-dependent efficiency droop (T-droop), which is systematically found by investigating the blueshift in peak emission wavelength and calculating the thermal resistance (Rth) that increases with the reduced mesa area. The decrease in peak EQE at 440 K compared to 300 K is also presented, which demonstrates that the reduction in peak EQE increases with reducing μ-LED sizes. It is pointed out that the small-sized μ-LEDs suffer from higher junction temperature due to lower heat dissipation caused by higher Rth compared to large-sized μ-LEDs.

Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode.

Here, we propose a thermally stable and high-reflectivity Ni/Rh/Ni/Au p-type electrode for AlGaN-based deep-ultraviolet (DUV) flip-chip light-emitting diodes (FCLEDs). We discover that the reflectance of Ni/Au electrode deteriorated significantly after rapid thermal annealing. Experiments show that Ni and Au agglomerate at high temperatures, and more incident photons traverse the gaps between the agglomerates, leading to a decrease in reflectance of Ni/Au after annealing. In contrast, the proposed Ni/Rh/Ni/Au p-type electrode shows remarkable thermal stability as a result of the suppression of Ni agglomeration by the Rh layer at high temperatures. Besides, due to the higher reflectivity of the Ni/Rh/Ni/Au electrode and its lower specific contact resistivity formed with p-GaN, the external quantum efficiency and wall-plug efficiency of a DUV FCLED with Ni/Rh/Ni/Au electrode are increased by 13.94% and 17.30% in comparison with the one with Ni/Au electrode at an injection current of 100 mA. The Ni/Rh/Ni/Au electrode effectively solves the long-standing dilemma of efficiency degradation of DUV FCLEDs with a Ni/Au electrode after high-temperature annealing.

SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (MCSA) to form the SiC layer is proposed. This new approach enables the growth of epitaxial GaN layers with low defect content and facilitates transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by the MCSA and elaborates on the benefits of using these substrates in LED production. Additionally, the advantages of the growth interface between SiC and Si materials are discussed. Moreover, it is found that thinner SiC layers (<200 nm) contribute to the scattering of the LED’s own radiation in the heterostructure waveguide, which decreases its absorption by silicon. For flip-chip LEDs with the substrate removed, substrates with thicker SiC layers (~400 nm) and a growth porous layer of several microns at the SiC-Si interface is utilized to simplify Si substrate removal and enhance the manufacturing process’s cost-effectiveness.

Enhanced p-type Ohmic contact performance in FCLEDs by manipulating thermal stress distribution to suppress Ag agglomeration

The implementation of reflective p-type Ohmic contact is an effective way to solve current crowding and improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we investigate the effects of annealing temperature, annealing time, and N2 flow rate on the formation for Ag/p-GaN Ohmic contact and determine the optimal annealing process parameters. After inserting an indium-tin oxide layer between Ag and p-GaN, the specific contact resistance decreases from 6.66 × 10−3 to 1.86 × 10−3 Ω cm2. In addition, we discover the appearance of a “black line” around the edges of the chips after high-temperature annealing. Finite element analysis and experiments show that the “black line” is related to Ag agglomeration under high temperatures due to stress concentration at the edges of the chips. A strategy for manipulating the stress concentration by adjusting the thickness of the TiW diffusion barrier layer is proposed based on insight obtained by modeling the stress distribution at the edge of the chips. The electrical properties of the fabricated FCLEDs show that the proposed stress manipulation strategy solves the problem of “black line” effectively and maintains the performance of the chips well.

Strategically constructed high-reflectivity multiple-stack distributed Bragg reflectors for efficient GaN-based flip-chip mini-LEDs

Full-angle distributed Bragg reflectors (DBRs) consisting of numerous sub-DBRs with discrete central wavelengths have been developed to enhance performance of GaN-based flip-chip mini light-emitting diodes (FC mini-LEDs). However, relatively low reflectivity of full-angle DBRs at large angle incidence restricts further enhancement in performance of FC mini-LEDs. Here, we introduce a reflectivity optimization strategy for constructing high-reflectivity multiple-stack DBRs by rationally engineering the number of sub-DBRs and adjusting central wavelength distribution of sub-DBRs. Based on the reflectivity optimization strategy, we devise a Ti3O5/SiO2 quintuple-stack DBR which is composed of five sub-DBRs. Our quintuple-stack DBR maintains a high reflectivity (>97.5%) over a wide range of incident angles of light. Notably, compared with the full-angle DBR, our quintuple-stack DBR exhibits higher reflectivity at large angle incidence and thinner multilayer thickness. Furthermore, we demonstrate two types of GaN-based blue FC mini-LEDs with indium-tin oxide (ITO)/quintuple-stack DBR and ITO/full-angle DBR p-type ohmic contacts. Benefiting from superior reflection performance, blue FC mini-LED with ITO/quintuple-stack DBR achieves an enhancement of ∼5.8% in light output power at 10 mA, in comparison with blue FC mini-LED with ITO/full-angle DBR. Our work signifies an advancement towards high-reflectivity DBRs, which enables higher-performance FC mini-LEDs.

Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing.

Ultraviolet light-emitting diodes (LEDs) suffer from a low wall-plug efficiency, which is to a large extent limited by the poor light extraction efficiency (LEE). A thin-film flip-chip (TFFC) design with a roughened N-polar AlGaN surface can substantially improve this. We here demonstrate an enabling technology to realize TFFC LEDs emitting in the UVB range (280-320 nm), which includes standard LED processing in combination with electrochemical etching to remove the substrate. The integration of the electrochemical etching is achieved by epitaxial sacrificial and etch block layers in combination with encapsulation of the LED. The LEE was enhanced by around 25% when the N-polar AlGaN side of the TFFC LEDs was chemically roughened, reaching an external quantum efficiency of 2.25%. By further optimizing the surface structure, our ray-tracing simulations predict a higher LEE from the TFFC LEDs than flip-chip LEDs and a resulting higher wall-plug efficiency.

Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter.

In this work, by using three-dimensional finite-difference time-domain (3D FDTD) method, the effect of conventional nano-patterned sapphire substrate (NPSS) on the optical crosstalk and the light extraction efficiency (LEE) for InGaN/GaN-based flip-chip micro light-emitting diodes (µ-LEDs) are systematically studied. We find that the conventional NPSS is not suitable for µ-LEDs. It is because the inclined mesa sidewall for µ-LEDs possesses a good scattering effect for µ-LEDs, but the introduced conventional NPSS causes part of the light be off escape cone between sapphire and air and become the guided light. To suppress the guided light and improve the optical crosstalk, a thick air layer between the n-GaN layer and the sapphire substrate can be used as a light filter to prevent the guided light from propagating into the sapphire. However, in reality, it is challenging to make the aforementioned air layer from point of fabrication view. Therefore, we propose the air-cavity patterned sapphire substrate (AC-PSS) as the light filter. Our results show that the crosstalk ratio can be decreased to the value even lower than 10%. The LEE can also be enhanced simultaneously due to combination effects of the filtering effect of the AC-PSS and the scattering effect of the inclined mesa sidewall.

Rational Distributed Bragg Reflector Design for Improving Performance of Flip-Chip Micro-LEDs

The distributed Bragg reflector (DBR) has been widely used in flip-chip micro light-emitting diodes (micro-LEDs) because of its high reflectivity. However, the conventional double-stack DBR has a strong angular dependence and a narrow reflective bandwidth. Here, we propose a wide reflected angle Ti3O5/SiO2 DBR (WRA-DBR) for AlGaInP-based red and GaN-based green/blue flip-chip micro-LEDs (RGB flip-chip micro-LEDs) to overcome the drawbacks of the double-stack DBR. The WRA-DBR consisting of six sub-DBRs has high reflectivity within the visible light wavelength region at an incident angle of light ranging from 0° to 60°. Furthermore, the influence of the WRA-DBR and double-stack DBR on performances of RGB flip-chip micro-LEDs is numerically investigated based on the finite-difference time-domain method. Owing to higher reflectivity and less angular dependence of the WRA-DBR, the RGB flip-chip micro-LEDs with the WRA-DBR have a stronger electric field intensity in the top side in comparison with RGB flip-chip micro-LEDs with the double-stack DBR, which indicates that more photons can be extracted from micro-LEDs with the WRA-DBR.

Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

This work investigates the effect of current stress on InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ-LEDs) with a mesa size of 30 × 30 μm2 and describes the stress-related mechanisms: defect aggregation and generation, which cause the change in optoelectronic performance of μ-LEDs. A forward-current stress is applied at 75 A/cm2 (0.7 mA) for 200 h. The device performance degrades with increasing stress time except until 25 h. During the initial 25 h of aging, the light output power and the external quantum efficiency (EQE) increase due to the improved crystal quality caused by aggregation of point defects in the active region, which are supported by the ideality factor and the S-parameter. The high-resolution emission-microscope images reveal that the generation of point defects at mesa sidewalls rather than the active region is crucial in performance degradation. We highlight, in particular, that the aging test generates sidewall point defects even though the sidewalls were properly passivated by a thick SiO2 layer. The mechanisms of defect aggregation and generation due to aging are consistently described by the ideality factor, the S-parameter, and the EQE.

Improving the performance for flip-chip AlGaN-based deep ultraviolet light-emitting diodes using surface textured Ga-face n-AlGaN.

Low light extraction efficiency (LEE), high forward voltage and severe self-heating effect greatly affect the performance for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this work, surface-textured Ga-face n-AlGaN is fabricated low-costly using self-assembled SiO2 nanosphere as hard mask. The experimental results manifest that when compared with conventional DUV LEDs, the optical power, the forward voltage and the thermal characteristics for the DUV LEDs with surface-textured Ga-face n-AlGaN are improved obviously. It is because the surface-textured Ga-face n-AlGaN between mesa and the n-electrode can be used as the scattering center for trapped light, and this leads to the enhanced LEE. Furthermore, thanks to the surface-textured n-AlGaN under the n-electrode, the n-type ohmic contact area can be increased effectively. Therefore, the n-type ohmic contact resistance can be reduced and the better heat dissipation can be attained for the proposed flip-chip DUV LED.

Enhancement of the light extraction characteristics and wide-angle emissive behavior of deep-ultraviolet flip-chip light-emitting diodes by using optimized optical films.

We propose the use of optical films to enhance the light extraction efficiency (LEE) and wide-angle emission of traditional packaged deep-ultraviolet light-emitting diodes (DUV-LEDs). Total internal reflection occurs easily in DUV-LEDs because they contain sapphire, which has a high refractive index. DUV-LEDs also contain an aluminum nitride (AlN) ceramic substrate, which has high light absorption in the ultraviolet band. Photons are absorbed by the sapphire and AlN ceramic substrate, which reduces the LEE of DUV-LEDs. By adding a brightness enhancement film (BEF) on the sapphire surface and a high-reflection film (HRF) on the surface of the AlN ceramic substrate, the LEE of DUV-LEDs can be increased. Moreover, we designed a single-layer metal reflective film (SMRF) on the upper surface of the quartz glass in order to achieve wide-angle emission. Experimental results indicated that compared with traditional packaged DUV-LEDs, the light output power and external quantum efficiency of DUV-LEDs with a plated BEF, HRF, and SMRF increased by 18.3% and 18.2%, respectively. Moreover, an emission angle of 160° was achieved. In a reliability test, DUV-LEDs maintained more than 95% of the initial forward voltage and light output power after 1000 h of operation at 25°C, which indicated that the addition of an optical film can improve the light efficiency and long-term reliability of DUV-LEDs.

Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

In this letter, we describe the design and fabrication of high-power AlGaN-based ultraviolet (UV) flip-chip high-voltage light-emitting diodes (LEDs) operating at 368 nm with an epitaxial indium tin oxide (ITO)/Al reflecting mirror and symmetry electrode layout. Metal-organic chemical vapor deposition (MOCVD) was used to grow an ITO thin film as a transparent electrode on the LED surface. At 365 nm, epitaxial ITO thin films exhibited a transmittance of up to 93.6%. Additionally, the epitaxial ITO/Al reflective mirror has a reflectance of 81.2% at 365-nm. To investigate the electrical characteristics, four types of HV-LED micro-cells were constructed with varying n-type mesa structures and p-type interconnect electrodes. We demonstrated a forward voltage (Vf) of 7.86 V at 350 mA with a 2 × 2 mico-cells high-voltage ultraviolet 368-nm flip-chip LED after optimising electrode structure and device process.

Mechanical, photoelectric and thermal reliability of SAC307 solder joints with Ni-decorated MWCNTs for flip-chip LED package component during aging

PurposeThis study aims to study the mechanical, photoelectric, and thermal reliability of SAC307 solder joints with Ni-decorated MWCNTs for flip-chip light-emitting diode (LED) package component during aging. By adding nanoparticles (Ni-multi-walled carbon nanotubes [MWCNTs]) to the solder paste, the shear strength and fatigue resistance of the brazed joint can be improved. However, the aging properties of Ni-modified MWCNTs composite solder joints have not been deeply studied. In this research, the mechanical, photoelectric and thermal reliability of SAC307 packaged flip-chip LEDs with Ni-MWCNTs added during aging were studied.Design/methodology/approachCompared with SAC solder alloys, the effects of different contents (0, 0.05, 0.1 and 0.2 Wt.%) of Ni-MWCNTs on the photoelectric and thermal properties of composite solder joints were examined. To study the aging characteristics of composite solder joints, the solder joints were aged at 85°C/85% relative humidity.FindingsThe addition of an appropriate amount of reinforcing agent Ni-MWCNTs reduces the density of the composite solder to 96% of the theoretical value of the SAC solder alloy. In addition, the microhardness increases and the wetting angle decreases. Two different phase compositions were observed in the solder joints with Ni-MWCNTs reinforcement: Cu3Sn and (Cu, Ni)6Sn5. The solder joints of SAC307-0.1Ni-MWCNTs exhibit the highest luminous flux and luminous efficiency of flip-chip LED filaments, the lowest steady-state voltage and junction temperature. And with the extension of the aging time, its aging stability is the best. In short, when the addition amount of Ni-MWCNTs is 0.1 Wt.%, the solder joints exhibit the best wettability and the thinnest intermetallic compound layer. And the shear strength of the tested solder joints is the best, and the void ratio is the lowest. At this time, the enhancement effect of Ni-MWCNTs on the composite solder has been best demonstrated.Research limitations/implicationsThe content range of enhancer Ni-MWCNTs needs to be further reduced.Practical implicationsThe authors have improved the performance of Ni-modified MWCNTs composite solder joints.Originality/valueComposite solder with high performance has great practical application significance for improving the reliability and life of the whole device.

Correction to: Design of a GaN-based flip chip light emitting diode (FC-LED) with Au bumps & Thermal analysis with different sizes and adhesive materials for performance considerations

Correction to: Design of a GaN-based flip chip light emitting diode (FC-LED) with Au bumps & Thermal analysis with different sizes and adhesive materials for performance considerations

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication.

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10−9 A at gate-to-source voltage (VGS) = −10 V, and 21 mA at VGS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the VGS increases from −6 to 4 V at VDD = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.

Design of a GaN-Based Flip Chip Light Emitting Diode (FC-LED) with au Bumps &amp; Thermal Analysis with Different Sizes and Adhesive Materials for Performance Considerations

Design of a GaN-Based Flip Chip Light Emitting Diode (FC-LED) with au Bumps &amp; Thermal Analysis with Different Sizes and Adhesive Materials for Performance Considerations

Issue of spatial coherence in MQW based micro-LED simulation.

In existing flip-chip LED simulations, the light extraction efficiency is related to the multiple quantum well (MQW) to metal reflector distance because of optical interference. We calculate the contrast using several typical light intensity distributions among the several QWs in MQW. The coherence is obtained analytically. When the luminosity of each QW is equal, the contrast is ∼0, meaning the light is incoherent, contrary to traditional studies. The spatial coherence is important only when the light emission comes from just one QW. As the MQW has a not negligible thickness, the traditional single-dipole model is no longer accurate.