Flicker Noise Measurement Research Articles

Chemistry of the Au-Thiol Interface through the Lens of Single-Molecule Flicker Noise Measurements.

Chemistry of the Au-S interface at the nanoscale is one of the most complex systems to study, as the nature and strength of the Au-S bond change under different experimental conditions. In this study, using mechanically controlled break junction technique, we probed the conductance and analyzed Flicker noise for several aliphatic and aromatic thiol derivatives and thioethers. We demonstrate that Flicker noise can be used to unambiguously differentiate between stronger chemisorption (Au-SR) and weaker physisorption (Au-SRR') type interactions. The Flicker noise measurements indicate that the gold rearrangement in chemisorbed Au-SR junctions resembles that of the Au rearrangement in pure Au-Au metal contact breaking, which is independent of the molecular backbone structure and the resulting conductance. In contrast, thioethers showed the formation of a weaker physisorbed Au-SRR' type bond, and the Flicker noise measurement indicates the changes in the Au-anchoring group interface but not the Au-Au rearrangement like that in the Au-SR case. Additionally, by employing single-molecular conductance and Flicker noise analysis, we have probed the interfacial electric field-catalyzed ring-opening reaction of cyclic thioether under mild environmental conditions, which otherwise requires harsh chemical conditions for cleavage of the C-S bond. All of our conductance measurements are complemented by NEGF transport calculations. This study illustrates that the single-molecule conductance, together with the Flicker noise measurements can be used to tune and monitor chemical reactions at the single-molecule level.

Flicker Noise in Resistive Gas Sensors-Measurement Setups and Applications for Enhanced Gas Sensing.

We discuss the implementation challenges of gas sensing systems based on low-frequency noise measurements on chemoresistive sensors. Resistance fluctuations in various gas sensing materials, in a frequency range typically up to a few kHz, can enhance gas sensing by considering its intensity and the slope of power spectral density. The issues of low-frequency noise measurements in resistive gas sensors, specifically in two-dimensional materials exhibiting gas-sensing properties, are considered. We present measurement setups and noise-processing methods for gas detection. The chemoresistive sensors show various DC resistances requiring different flicker noise measurement approaches. Separate noise measurement setups are used for resistances up to a few hundred kΩ and for resistances with much higher values. Noise measurements in highly resistive materials (e.g., MoS2, WS2, and ZrS3) are prone to external interferences but can be modulated using temperature or light irradiation for enhanced sensing. Therefore, such materials are of considerable interest for gas sensing.

Assessment of Fuel Cells’ State of Health by Low-Frequency Noise Measurements

We proposed applying low-frequency (flicker) noise in proton-exchange membrane fuel cells under selected loads to assess their state of health. The measurement set-up comprised a precise data acquisition board and was able to record the DC voltage and its random component at the output. The set-up estimated the voltage noise power spectral density at frequencies up to a few hundred mHz. We observed the evolution of the electrical parameters of selected cells of different qualities. We confirmed that flicker noise intensity varied the most (more than 10 times) and preceded changes in the impedance or a drop in the output DC voltage (less than 2 times). The data were observed for current loads (from 0.5 to 32 A) far from the permissible load. We deduce that the method can be utilised in industrial conditions to monitor the state of health of the selected cells by noise analysis. The method can be used in real-time when the flicker noise is measured within the range of a few Hz and requires a reasonable amount of averaging time to estimate its power spectral density. The presented method of flicker noise measurement has considerable potential for use in innovative ways of fuel cell quality monitoring.

A correlation noise spectrometer for flicker noise measurement in graphene samples

We present a high-resolution digital correlation spectrum analyzer for the measurement of low frequency resistance fluctuations in graphene samples. The system exploits the cross-correlation method to reject the amplifiers’ noise. The graphene sample is excited with a low-noise DC current. The output voltage is fed to two two-stage low-noise amplifiers connected in parallel; the DC signal component is filtered by a high-pass filter with a cutoff frequency of 34 mHz. The amplified signals are digitized by a two-channel synchronous ADC board; the cross-periodogram, which rejects uncorrelated amplifiers’ noise components, is computed in real time. As a practical example, we measured the noise cross-spectrum of graphene samples in the frequency range from 0.153 Hz to 10 kHz, both in two- and four-wire configurations, and for different bias currents. We report here the measurement setup, the data analysis and the error sources.

High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT

The InAlAs/InGaAs metal–oxide–semiconductor metamorphic high electron mobility transistors (MOS-mHEMTs) were demonstrated by using liquid-phase HBr treatment technology to form a high-quality gate insulator layer. In this study, liquid-phase HBr treatment technology was used instead of traditional plasma-assisted chemical vapor deposition (PECVD) because the proposed technology can prevent the device from plasma-induced damage. The novel HBr + ultraviolet (UV) illumination treated InGaAs provided a lower surface states such that MOS structure can be efficiently obtained. Besides, based on the atomic force microscopy (AFM) measurement, the native oxides film formed by HBr + UV illumination treatment also provided a better surface roughness compared to traditional NH 4OH and only HBr treatment solutions. It is beneficial for reducing the surface traps and lowering the leakage current in MOS-mHEMTs. Based on the flicker noise and load-pull power measurement results, HBr + UV treatment mHEMT achieved a low flicker noise at high current level and the power-added efficiency can be enhanced up to 9%. Therefore, the novel liquid phase method of HBr + UV illumination treatment exhibited a highly potential for low noise microwave power device applications.

MEASUREMENT OF FLICKER NOISE AS A DIAGNOSTIC TOOL FOR HOT-ELECTRON DEGRADATION IN GaN-BASED LEDS

Hot-electron stressing on GaN -based light emitting diodes (LEDs) has been performed using a dc stressing current. Detailed characterizations on the degradations in the optoelectronic and low-frequency noise properties of the devices have been conducted. Experimental results on I-V, electroluminescence (EL) and the integrated light output of the devices exhibit significant degradations with the stress time. Investigations on the low-frequency excess noise of the devices show that the degradations of the device properties arise from the generation of interface states at the InGaN / GaN heterointerface due to hot-electron stressing. Over two orders of magnitude increase in the current noise power spectral density, SI(f), is typically observed prior to the failure of the devices. Furthermore, it is shown that the initial rate of increase in SI(f) resulting from a dc current stress time of 48 hours is strongly correlated to the lifetimes of the devices demonstrating that flicker noise measurement can be used as a diagnostic tool for hot-electron hardness of the device.

Flicker noise measurement of HF quartz resonators

Frequency flicker of quartz resonators can be derived from the measurement of S(phi) (f), i.e., the power spectrum density of phase fluctuations phi. The interferometric method appears to be the best choice to measure the phase fluctuations of the quartz resonators because of its high sensitivity in the low power conditions, which is required for this type of resonator. Combining these two ideas, we built an instrument suitable to measure the frequency flicker floor of the quartz resonators, and we measured the stability of some 10-MHB high performance resonators as a function of the dissipated power. The stability limit of our instrument, described in terms of Allan deviation sigma(y)(tau), is of some 10(-14).