Flexible Thin-film Transistors Research Articles

Separation of Highly Pure Semiconducting Single-Wall Carbon Nanotubes in Alkane Solvents via Double Liquid-Phase Extraction.

This study delves into the distinctive selective property exhibited by a non-conjugated cholesterol-based polymer, poly(CEM11-b-EHA7), in sorting semiconducting single-walled carbon nanotubes (s-SWCNTs) within isooctane. Comprised of 11 repeating units of cholesteryloxycarbonyl-2-hydroxy methacrylate (CEM) and 7 repeating units of 2-ethylhexyl acrylate (EHA), this non-conjugated polymer demonstrates robust supramolecular interactions across the sp2 surface structure of carbon nanotubes and graphene. When coupled with the Double Liquid-Phase Extraction (DLPE) technology, the polymer effectively segregates s-SWCNTs into the isooctane phase (nonpolar) while excluding metallic SWCNTs (m-SWCNTs) in the water phase (polar). DLPE proves particularly efficient in partitioning larger-diameter s-SWCNTs (0.85-1.0 nm) compared to those dispersed directly in isooctane by poly(CEM11-b-EHA7) using direct liquid-phase exfoliation (LPE) techniques for diameters ranging from 0.75 to 0.95 nm. The DLPE method, bolstered by poly(CEM11-b-EHA7), successfully eliminates impurities from s-SWCNT extraction, including residual metallic catalysts and carbonaceous substances, which constitute up to 20% of raw HiPCO SWCNTs. DLPE emerges as a scalable and straightforward approach for selectively extracting s-SWCNTs in nonpolar, low-boiling-point solvents like alkanes. These dispersions hold promise for fabricating fast-drying s-SWCNT inks, which are ideal for printed and flexible thin-film transistors.

Combustion-assisted low-temperature ZrO2/SnO2 films for high-performance flexible thin film transistors

We developed high-performance flexible oxide thin-film transistors (TFTs) using SnO2 semiconductor and high-k ZrO2 dielectric, both formed through combustion-assisted sol-gel processes. This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating. The combustion ZrO2 films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network, which contributes to the low leakage current and frequency-independent dielectric properties. The ZrO2/SnO2 TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics, including a field-effect mobility of 26.16 cm2/Vs, a subthreshold swing of 0.125 V/dec, and an on/off current ratio of 1.13 × 106 at a low operating voltage of 3 V. Furthermore, we demonstrated flexible ZrO2/SnO2 TFTs with robust mechanical stability, capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm, achieved by scaling down the device dimensions.

Electrical and UV-sensing performance of N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3-dielectric and ZnSnO-channel-based flexible thin-film transistors

Flexible thin-film transistors (TFTs) based on N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 dielectric and ZnSnO channel show high electrical and UV-sensing performance. The optimal N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 compositions with low equivalent oxide thicknesses (≈2 nm) and high-entropy (configurational entropy ≈ 1.59 R) are efficiently determined from a wide composition space (library). The film library is patterned to 450 metal–insulator-metal stacks, revealing dielectric constants ≈ 262–322 and loss (tan δ) ≈ 0.01–0.30 for the N-doped Ba(Ti,Zr,Mo,Hf,Ta)O3 at 1 kHz. The library is further integrated to 63 TFTs, and the promising ones exhibit the remarkable parameters: current on/off ratio of 108, threshold voltage (VT) of 0.02 V, saturation field-effect mobility of ≈76 cm2⋅V−1⋅s−1, and subthreshold swing of 0.062 V dec−1. The devices also exhibit desirable long-term stability for up to five months and perform reliably with small or negligible changes in VT and drain-source current under various gate-bias stress and temperature conditions. Furthermore, the TFT-based ultraviolet (253 nm) detector demonstrates impressive sensitivity (≈ 2 × 106) and responsibility (≈ 1171.9 A W−1). There is no substantial degradation in electrical or sensing characteristics under various levels of deformation. Charge transport in constructed energy band diagrams is used to elucidate the observed remarkable performance.

Impact of Crystal Domain on Electrical Performance and Bending Durability of Flexible Organic Thin-Film Transistors with diF-TES-ADT Semiconductor

Impact of Crystal Domain on Electrical Performance and Bending Durability of Flexible Organic Thin-Film Transistors with diF-TES-ADT Semiconductor

(Invited) Low-Frequency Noise in Flexible Carbon-Nanotube Analog Circuits

Since flexible devices can come into close contact with the human body, they are suitable for wearable sensor applications for long-term and non-invasive monitoring of biological and physiological signals in various fields such as medical/health care and sports, among others. In order to achieve a fully flexible sensor system, various electronic circuits need to be integrated on a flexible film, including the analog frontend (AFE) and radio-frequency (RF) frontend, as well as the sensors. Recently, we have demonstrated low-voltage CNT-based analog/digital mixed-signal circuits with excellent stability and robustness against variability, including the AFE. One remaining issue with CNT-based analog circuits is low-frequency noise, which directly impacts the sensitivity of the sensor system within the frequency range of physiological signals such as ECG and EEG.Here, we study the low-frequency noise of flexible carbon nanotube thin-film transistors and their influence on analog circuits. The low-frequency noise exhibits a typical 1/f spectrum. Inserting an interface layer between the CNT channel layer and gate insulator layer reduces Hooge's parameter of the 1/f noise. The results indicate that maintaining distance from the channel to traps in the gate oxide is important for reducing low-frequency noise.

Surface engineering of Al2O3 dielectric layer for all-sputtered-oxide transparent and flexible a-IGZO thin film transistor

Transparent flexible display devices have attracted massive attention in recent years owing to their practical applications that can be compatibly adapted to human demand and technological development. Worldwide researchers have studied flexible transparent thin film transistors (TFTs) to qualify them for the backplane component of future transparent and flexible displays. Simplifying the fabrication process of a TFT can be considered a critical need for reducing consumed cost, time, toxic chemicals. In this study, sputtering was utilized as a major fabrication method for manufacturing a transparent oxide TFT device, which demonstrated good mechanical flexibility. A simple surface treatment process was applied to enhance the susceptibility of the sputtered Al2O3 dielectric through multiple coatings of solution processed Al2O3. It is noteworthy that the transparent oxide TFT device exhibits a high optical transparency of 81.12% and good electrical switchability at low operating voltage (3 V) with a decent mobility of 4.37 cm2 V−1 s−1 and proven mechanical durability.

Junctionless Structure Indium-Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability.

In recent years, considerable attention has focused on high-performance and flexible crystalline metal oxide thin-film transistors (TFTs). However, achieving both high performance and flexibility in semiconductor devices is challenging due to the inherently conductive and brittle nature of crystalline metal oxide. In this study, we propose a facile way to overcome this limitation by employing a junctionless (JL) TFT structure via oxygen plasma treatment of the crystalline indium-tin oxide (ITO) films. The oxygen plasma treatment significantly reduced oxygen vacancies in the ITO films, contributing to the significant reduction in the carrier concentration from 4.67 × 1020 to 1.39 × 1016. Importantly, this reduction was achieved without inducing any noticeable structural changes in the ITO, enabling the successful realization of ITO JL TFTs with an adjustable threshold voltage. Furthermore, the ITO JL TFTs demonstrate good stability and reliability under various bias stress conditions, aging in the air atmosphere, and high-temperature processes. In addition, the ITO JL TFTs exhibit low light sensitivity due to the wide bandgap of ITO and further suppression of Vo defects, making them suitable for applications requiring stable performance under light exposure. To compare and analyze the flexibility of the JL structure and conventional structure with additional source/drain (S/D) junction in ITO TFTs with nonencapsulation, we utilized mechanical simulations and transmission line method (TLM). By employing the JL structure in ITO TFT through carefully optimized oxygen plasma treatment, we successfully mitigated stress concentration at the S/D-channel interface. This resulted in a JL ITO TFT that exhibited a change in contact resistance of less than 20% even after 20,000 bending cycles. Consequently, a stable and flexible ITO TFT with field-effect mobility (μFE) of 12.74 cm2/(V s) was realized, outperforming conventionally structured ITO TFTs with additional S/D junction, where the contact resistance nearly tripled.

Hydrogen-Bonding Integrated Low-Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts.

Van der Waals (vdW) integration enables clean contacts for low-dimensional electronic devices. The limitation remains; however, that an additional tunneling contact resistance occurs owing to the inherent vdW gap between the metal and the semiconductor. Here, it is demonstrated from theoretical calculations that stronger non-covalent hydrogen-bonding interactions facilitate electron tunneling and significantly reduce the contact resistance; thus, promising to break the limitations of the vdW contact. π-plane hydrogen-bonding contacts in surface-engineered MXene/carbon nanotube metal/semiconductor heterojunctions are realized, and an anomalous temperature-dependent tunneling resistance is observed. Low-dimensional flexible thin-film transistors integrated by hydrogen-bonding contacts exhibit both excellent flexibility and carrier mobility orders of magnitude higher than their counterparts with vdW contacts. This strategy demonstrates a scalable solution for realizing high-performance and low-power flexible electronics beyond vdW contacts.

High-sensitivity and energy-efficient chloride ion sensors based on flexible printed carbon nanotube thin-film transistors for wearable electronics

The advent of flexible single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) has transformed electronics, providing significant benefits like low operating voltage, reduced power consumption, cost-effectiveness, and improved signal amplification. This study focuses on leveraging these attributes to develop a novel flexible high-sensitivity and energy-efficient chloride ion sensors based on printed flexible SWCNT-TFTs utilizing polymers-sorted semiconducting SWCNTs (sc-SWCNTs) as the active layers and ion liquids-poly(4-vinylphenol as dielectric layers along with the evaporated deposition of aluminum electrodes and printed silver electrodes as the gate and source-drain electrodes, respectively. The sensors exhibit several operational advantages, including low voltage requirements (≤1 V), rapid response speed (5.32 s), significant signal amplification (Up to 702.6 %), low power consumption (0.31 μJ at 1 mmol chloride ion), good repeatability, high sensitivity for both low and high concentrations of chloride ion (up to 100 mmol/L) and excellent mechanical flexibility (No obvious changes after bending for 10,000 times with a 5 mm radius). The detection mechanism of chloride ions was analyzed using X-ray Photoelectron Spectroscopy (XPS). It was found that chloride ions react with silver nanoparticles (AgNPs) to form silver chloride (AgCl) on printed electrodes, impeding carrier transport and reducing the currents in SWCNT TFTs. Importantly, our sensors' compatibility with smart devices allows for real-time monitoring of chloride ion levels in human sweat, offering significant potential for daily health monitoring.

Parylene-C-based flexible organic thin-film transistors and their reliability improvement using SU-8 passivation

Flexible and biocompatible organic thin-film transistors (OTFTs) can be well-suited for biological applications due to their compatibility with biomaterials. In this study, flexible OTFTs were fabricated with a Parylene-C substrate and gate dielectric, a material known for its flexibility and biocompatibility. We used poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] as organic channel material. To ensure the longevity and protection of the channel, SU-8, known for its biocompatibility and transparency, effectively safeguarded the OTFT and ensured its sustained operation. Flexible OTFTs were affixed to a curved fixture, referred to as a “curved condition.” The device parameters at −20 V of VD in the curved condition shows an Ion/off ratio of 3.5 × 104, threshold voltage (VTH) of −0.42 V, and mobility of 0.003 cm2/V s. The Parylene-C-based OTFT with SU-8 passivation demonstrated reliability by maintaining performance under curved conditions for 40 days. The results show that the proposed device is suitable for flexible electronics and sensor applications.

Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics.

Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Low-voltage operation is one of the prerequisites for the practical applications of the organic thin-film transistors (OTFTs). Up to date, the most reported low-voltage operatable OTFTs use a bottom-gate structure, and are fabricated by several different technologies in the whole process, in which the organic semiconductors and/or gate dielectrics are prepared in the expensive vacuum equipment. The simple fabricating technologies and fewer processes can better demonstrate the inherent advantages, and enhance the commercial competitiveness of OTFTs. Here, we propose a strategy to fabricate the binary polymers gate dielectric by one-step spin-coating in the top-gate structured flexible OTFTs, by which not only the device performances are prominently improved, but also the fabricating process of the OTFTs is minimized. As a result, the flexible OTFTs exhibit a high mobility over 0.5 cm2 Vs−1, low threshold voltage near to −0.5 V, and excellent mechanical bending durability with a very slightly performances degradation after the tensile and compressive bending at a small curvature radius of 3.0 mm over 1000 cycles.

Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al2O3 Interlayer

Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al₂O₃ Interlayer

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.

Thin-Film Transistor-Based Sensor Interface Circuits Enabling Distributed Local In-Module Solar Cell Temperature Monitoring

Accurate efficiency prediction, improved reliability, and extended lifetime of solar modules are the key driving factors for investment and research in photovoltaic (PV) systems. Enhanced performance and more refined models are realized by incorporating data derived from localized monitoring of solar modules. This work combines interface circuits designed in flexible thin-film transistors (TFTs) with distributed temperature sensors integrated into solar cell lamination enabling in-module within-cell PV monitoring. A TFT multiplexer selects between sensors and is commanded through a serial peripheral interface (SPI) to reduce the IO connections, while the low offset unity-gain TFT buffer enables precise signal transfer. The in-cell sensors together with TFT read-out circuitry demonstrate accurate outdoor temperature monitoring, comparable to silicon integrated circuits.

Flexible Metal Oxide Thin-Film Transistors Produced by Nanofiber-to-Film Process

With the rapid technology development of the thin-film transistors (TFTs), the TFTs based on silicon are facing inherent limitations. Finding suitable materials and developing new techniques for fabricating high-performance TFTs...

Controlled 2D growth approach via atomic layer deposition for improved stability and performance in flexible SnO thin-film transistors

Atomic layer deposition based controlled lateral growth leads the formation of 2D-like SnO thin film. This approach also enabled the fabrication of record stability of SnO TFTs and flexible SnO TFT, stable until 10,000 cycles of bending tests.

Solution-processed high-k photopatternable polymers for low-voltage electronics.

High dielectric constant (k) polymers have been widely explored for flexible, low-power-consumption electronic devices. In this work, solution-processable high-k polymers were designed and synthesized by ultraviolet (UV) triggered crosslinking at a low temperature (60 °C). The highly crosslinked network allows for high resistance to organic solvents and high breakdown strength over 2 MV cm-1. The UV-crosslinking capability of the polymers enables them to achieve a high-resolution pattern with a feature size down to 1 μm. Further investigation suggests that the polar cyano pendants in side chains are responsible for increasing the dielectric constant up to 10 in a large-area device array, thereby contributing to a low driving voltage of 5 V and high field-effect mobility exceeding 20 cm2 V-1 s-1 in indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). In addition, the solution-processable high-k dielectric polymers were utilized to fabricate flexible low-voltage organic TFTs, which show highly reliable and reproducible mechanical stability at a bending radius of 5 mm after 1000 cycles. And also, the high radiation stability of the dielectric polymers was observed in a UV-sensitive TFT device, thereby achieving highly reproducible pattern recognition, which is promising for artificial optic nerve circuits.

AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact

AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact

Highly Stable Flexible Thin-Film Transistors in Harsh Environments by Superhydrophobic Passivations

Highly Stable Flexible Thin-Film Transistors in Harsh Environments by Superhydrophobic Passivations