Flexible Broadband Research Articles

Flexible Terahertz Broadband Absorber Based on a Copper Composite Film.

Terahertz absorbers play a crucial role in terahertz detectors, radar stealth, electromagnetic shielding, and other fields. However, the design and fabrication of flexible terahertz broadband absorbers remain a challenge at present. Here, we demonstrated a terahertz broadband absorber based on a copper composite film (CCF) consisting of a copper foam and an organic silica gel doped with Fe3O4 powder. The CCF can be fabricated by the infiltration method. The influence of the thickness and the pore size of the copper foam and the mass fraction of doped Fe3O4 powder on the absorption bandwidth were investigated. When the thickness of the CCF is 1.5 mm, the pore size of the copper foam is 95 pores per inch (ppi), and the mass fraction of Fe3O4 is 1%; a broadband absorption is achieved in the range of 0.11-3.5 THz. It is noted that the mass fraction of Fe3O4 has a significant impact on the absorption bandwidth. In addition, the thickness of the CCF and the pore size of the copper foam also have an impact on the absorption. The impedance matching theory is introduced to understand the mechanism of broadband absorption. This flexible broadband absorber has potential application in terahertz stealth, shielding, and the sixth-generation (6G) broadband wireless communication in the future.

Self-Assembly of Soft and Conformable Broadband Absorbing Nanocellulose-Gold Nanoparticle Composites.

Broadband light-absorbing materials are of large interest for numerous applications ranging from solar harvesting and photocatalysis to low reflection coatings. Fabrication of these materials is often complex and typically utilizes coating techniques optimized for flat and hard materials. Here, we show a self-assembly based strategy for generating robust but mechanically flexible broadband light-absorbing soft materials that can conform to curved surfaces and surface irregularities. The materials were fabricated by adsorbing large quantities of gold nanoparticles (AuNPs) on the nanofibrils of hydrated bacterial cellulose (BC) membranes by tailoring the interaction potential between the cellulose nanofibrils and the AuNPs. The highly efficient self-assembly process resulted in very dense multilayers of AuNPs on the nanofibrils, causing extensive broadening of the localized surface plasmon resonance band and a striking black appearance of the BC membranes. The nanocomposite materials showed an absorptance >96% in both the visible and the near-infrared wavelength range. The AuNP-functionalized BC membranes demonstrated excellent conformability to curved and structured surfaces and could adopt the shape of highly irregular surface structures without any obvious changes in their optical properties. The proposed self-assembly based strategy enables the fabrication of soft and conformable broadband light-absorbing nanocomposites with unique optical and mechanical properties using sustainable cellulose-based materials.

Facile SILAR deposited SnS/NiS vertical heterojunction for high performance flexible broadband photodetector

Low-cost, flexible broadband photodetectors fabricated from two-dimensional transition metal chalcogenides have garnered attention because of their excellent absorption coefficient and photoconductivity. Likewise, vertical heterojunctions fabricated from two two-dimensional (2D) transition metal chalcogenides (TMCs) also have drawn major curiosity lately owing to their superior optical performance. This work reports a p-p type II vertical Van der Waal's heterojunction structure by depositing thin film of NiS over SnS on a flexible paper substrate. Morphological and structural characterization confirms presence of a rhombohedral β-NiS crystal structure along with traces of Ni(OH)2 on orthorhombic SnS nanoparticles. The device fabrication method made use of the inexpensive, clean room free SILAR (Successive Ionic Layer Adsorption and Reaction) technique. A purposeful modification of narrow bandgap property of NiS is done by depositing it in an alkaline environment. The fabricated device records optical responsivity of 0.92 mA/W under UV illumination, 5.32 mA/W under Visible illumination, and 0.8 mA/W under NIR illumination. A maximum EQE of 1.3 % is observed along with superior response times of 0.114 s (UV),0.103 s (Visible) and 1.34 s (NIR). The acquired photo response is due to superior absorption property of NiS in UV region and SnS in the visible and NIR region. The difference in fermi level between two materials causes efficient separation of the charge carriers that results in junctional electric field upon light illumination. The device underwent flexibility testing and shown exceptional resistance to bending force making it suitable for numerous applications like wearable healthcare monitoring, security purposes and flexible image sensors.

Tunable wideband terahertz absorber based on single-layer patterned graphene

In this study, we propose and validate a broadband terahertz perfect absorber. The absorber has a simple structure, which consists of a gold (Au) substrate, a TOPAS dielectric layer and a patterned graphene layer. By the simulations, a broad absorption band can be obtained with a high absorption above 90% between 3.31 THz and 7.15 THz, and the relative bandwidth reaches 73.4%. Meanwhile, the absorption higher than 99% is between 3.81 THz and 6.6 THz with a relative bandwidth of 53.6%. The mechanism of the surface excited plasma (SPP) and electromagnetic dipole resonance are responsible for its almost perfect broadband absorption. By changing the Fermi energy level of the graphene layer, the flexible broadband absorption spectra can be acquired. By varying the geometrical parameters of the structure, a wider spectral range of absorption wavelengths can be realized. For both TE and TM polarization, the absorption can remain above 90% over a wide range of incidence angles. Due to the independent tunability and high absorption of the proposed device, it has great potential applications in terahertz imaging, smart absorption, detectors and communications.

Flexible Broadband Organic Photodetectors with Ternary Planar-Mixed Heterojunction Semiconductors and Solution-Processed Polymeric Electrode.

Flexible organic photodetectors (OPDs) hold immense promise in health monitoring sensors, flexible imaging sensors, and portable optical communication. Nevertheless, the actualization of high-performance flexible electronics has been hindered by rigid electrodes such as metals or metal oxides. In this work, we constructed a flexible broadband organic photodetector using a solution-processed polymeric electrode, which exhibits flexibility surpassing that of conventional indium tin oxide (ITO) electrodes. Additionally, we employed a planar-mixed heterojunction (PMHJ) through a sequential deposition method and introduced PC71BM as the third constituent into the PM6/Y6 binary active layer, resulting in enhanced photodetection performance and a broadend spectral range. The optimized OPDs demonstrated remarkable detectivity (D*) exceeding 1012 Jones in brodband from 300 to 900 nm, with a champion D* of 6.31 × 1012 Jones at 790 nm. Furthermore, after undergoing 500 cycles of bending, the D* retained approximately 78% of its original performance, highlighting the outstanding mechanical stability. This work presents a promising pathway toward the development of flexible broadband OPDs using a straightforward method, offering enhanced compatibility in diverse application scenarios and propelling the frontier of flexible optoelectronic research.

High-Performance Flexible Broadband Photoelectrochemical Photodetector Based on Molybdenum Telluride.

Flexible broadband photodetectors are desired but challenging to be fabricated for next-generation wearable intelligent optoelectronic devices. Considering the narrow bandgap and strong light absorption, molybdenum telluride (MoTe2) based photoelectrochemical photodetectors are successfully assembled by liquid phase exfoliation accompanied with the electrophoretic deposited method. This MoTe2-based photodetector shows a broadband detection in ultraviolet-near-infrared band, long-term stability within 18000s, and fast response in millisecond-level (response time≈19ms, recovery time≈26ms). More importantly, even though the MoTe2 photodetector is bent and twisted at a high degree for several hundred times, it still shows excellent flexibility with stable on-off switching characteristics. Additionally, this photodetector displays a good response for rotation angles in the range from 0° to 360°, and the extracted Iph maintain almost the same value approximately 0.97µAcm-2, suggesting an omnidirectional detection capability. This work demonstrates the proposed flexible photoanode shows a great potential in future broadband omnidirectional detection systems.

Flexible broadband optical frequency comb generation assisted by injection locking of semiconductor laser

A broadband optical frequency comb (OFC) generator is proposed and experimentally demonstrated. Based on the injection locking process in a semiconductor laser diode, multiple coherent carriers with large intervals can be generated, which are further combined to give a much broader OFC through the electro-optical modulation (EOM) technique. The corresponding theoretical analysis and simulation have been given in detail. In the experimental demonstration, an OFC with 9 comb lines can be generated on a single carrier by the cascaded MZMs with a multi-harmonic RF drive signal. After tripling the number of carriers, the number of the comb lines becomes 27. By properly adjusting the carrier’s interval and drive signal frequency, the generated OFC shows great flexibility on spacing and the number of comb lines, where a 27-line OFC with FSR of 5 GHz and 6.5 GHz have been demonstrated respectively. In addition, by increasing the number of RF sources, the OFC with up to 43 comb lines can be generated in this system. Compared with the traditional OFC generation implemented by the EOM technique on a single optical carrier, three times optical spectrum extension or the number of comb lines increasing can be achieved. The Multi-carrier broaden spectrum method retains all the advantages of EOM-based OFC generation and overcomes its disadvantages, such as limited spectrum width and the number of comb lines. It provides a new idea for broadband OFC generation.

Flexible broadband metamaterial absorber in long-wave infrared with visible transparency fabricated by laser direct writing.

Absorption of the long-wave infrared from human beings and the surroundings is a key step to infrared imaging and sensing. Here we demonstrate a flexible and transparent broadband infrared absorber using the photoresist-assisted metamaterials fabricated by one-step laser direct writing. The photoresist is patterned by the laser as an insulator layer as well as a mask to build the complementary bilayer metamaterials without lithography. The average absorptivity is 94.5% from 8 to 14 μm in experiment due to the broadband destructive interference of the reflected beam explained by the Fabry-Perot cavity model. The proposed absorber is applicable to various substrates with additional merits of polarization insensitivity and large angle tolerance, which offers a promising solution for thermal detection and management.

Reconfigurable and Phase‐Engineered Acoustic Metasurfaces for Broadband Wavefront Manipulation

AbstractA novel type of phase‐engineered acoustic metasurfaces with reconfigurable properties is reported, enabling the flexible broadband manipulation of reflected wavefronts. The participants of the metasurface are elements conceived to possess even‐distributed reflected phases covering 2π span with linearity and small acoustic energy loss. The reconfigurable property of the metasurface is implemented by rearranging the fixed meta‐elements based on the phase profile, which is related to the characteristic of a specific wavefront shape. The metasurface's capability is successfully demonstrated to achieve acoustic focusing and bending within the frequency range of 2300–2800 Hz, showcasing its feasibility and adaptability. To enhance its practical applications, porous materials are incorporated, leveraging the robustness of phase differences among the meta‐elements to achieve high acoustic energy cancellation. Effective sound attenuation occurs within the frequency range of 1300–3100 Hz, even under wide‐angle incidences ranging from −80° to 80°. The work paves the way for further research on reconfigurable acoustic metasurfaces in broad frequency regions and exerts favorable implications for generally applicable structures applied in multi‐fields including biomedical acoustics, noise control, and so on.

Flexible Broadband Solar Plasmonic Absorber Based on Graded Bandgap Multilayer for the Solar Cells Energy Harvesting with High Conversion Efficiency Sensitivity

Flexible Broadband Solar Plasmonic Absorber Based on Graded Bandgap Multilayer for the Solar Cells Energy Harvesting with High Conversion Efficiency Sensitivity

Preparation and coating characteristics of high performance and broadband shielding fabric based on polyester fiber

In this paper, electrodeposition was successfully used to prepare a kind of polyester fiber flexible broadband shielding material based on PET fabric. The Ni-Fe alloy coating prepared by electrodeposition can completely and evenly cover the substrate. The maximum saturation magnetic moment was 93.16 emu/g. The sample with the highest permeability was prepared through the process exploration experiment. The permeability increases first and then decreases with the increase of Fe content in the coating. The phase with the highest permeability in the coating is Ni3Fe. The simulation results show that the shielding effect of Ni-Fe/Cu layer was better than that of Cu/Ni-Fe layers. The optimal shielding effectiveness can reach 28.4db in 10 kHz magnetic field and 80 dB in 100k∼10 MHz magnetic field. In the electromagnetic field of 30M∼18 GHz, the shielding effectiveness is greater than 85 dB, up to 110 dB. The tensile strength of the shielding fabric is 91.63 MPa, the displacement is small, and the material has no obvious elasticity. During the stretching process, the coating breaks first, and then the PET fabric breaks.

Metal Work Function Effects on the Performance of UV–Visible–NIR Cs2SnI6 Photodetectors for Flexible Broadband Application

Herein, the role of top metal electrode work functions on the performance of flexible broadband ultraviolet (UV)–visible–near‐infrared (NIR) flexible Cs2SnI6 (CSI) photodetectors (PDs) are reported in the present study. The change in crystal plane orientation, surface morphology, and chemical composition of prepared films compared to hydrothermally synthesized CSI particles is confirmed by physical characteristics tools. The optical bandgap of CSI films is estimated to be 1.36 eV. The flexible CSI PDs are fabricated with three top metal electrodes (Mo, Ti, and Ni). The current–voltage (I–V) characteristics under the illumination of light sources with different wavelengths reveal the broadband UV–visible–NIR photodetection properties of flexible CSI PDs. The device with top Ti electrodes demonstrates maximum photoresponsivity (Rph = 1.65 ± 0.45 A W−1) and specific detectivity (Dph = 4.53 ± 0.36) × 1010 Jones for 455 nm compared to other wavelengths at Vb = 5 V. The fast photoresponse/decay time is 18 ms/24 ms for 455 nm at Vb = 1 V. The 85% and 90%–95% retentions of Rph of devices after 12 days keeping in a desiccator and after 500 bending cycle tests suggest the device's good environmental stability and mechanical flexibility, respectively. Thus, it is indicated in the results that CSI materials can be a potential candidate for flexible UV–visible–NIR photodetector for wearable electronic device applications.

ZnSe nanoflakes/ ZnO quantum dots heterojunction-based bandgap engineered, flexible broadband photodetector on paper substrate

ZnO-based photodetectors exhibit high responsivity and high photon absorption coefficients. However, they show absorption in a narrow range and a low photogenerated carrier lifetime, limiting their potential applications in optoelectronics. This work demonstrates a high-performance broadband photodetector using Zinc Selenide nanoflakes (ZnSe) - Zinc Oxide (ZnO) quantum dots (QDs) heterojunction. Using a simple hydrothermal method on a flexible paper substrate, this work overcomes the complexity of previously reported fabrication techniques that involve electrospinning, electron beam lithography, spin coating, etc. Detailed chemical and structural characterization reveal the formation of cubic phase of ZnSe nanoflakes-like structure showing broad absorption in the visible region. In contrast, ZnO QDs show a hexagonal structure and absorption in the ultraviolet region, improving the photodetector's detection range. The device shows superior responsivity (Rʎ) of 17.2 µA/W, and 30 µA/W, with specific detectivity (D*) of 4.74×107 Jones, and 9.39×107 Jones, for ultraviolet, and visible, respectively. Detailed studies based on energy band diagrams are performed to understand the charge transport mechanism. The device shows excellent reliability and high stability for 500 bending cycles, thus, presenting a low-cost, facile approach for developing high-performance photodetectors that find utility in wearables, healthcare, and security/defense applications.

Design, characterization and fabrication of a flexible broadband metamaterial absorber based on textile

Design, characterization and fabrication of a flexible broadband metamaterial absorber based on textile

Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed

Flexible broadband WS2/Si optical position-sensitive detector with high sensitivity and fast speed

Design of a transparent and flexible broadband omnidirectional antenna using characteristic mode analysis

An optically-transparent, mechanically flexible, monopole-radiation-characteristic, broadband omnidirectional antenna is proposed in this work. The radiator layer of the sandwich-structured antenna consists of a circular central patch with 16 circular satellite patches, and the characteristic mode analysis (CMA) was used to guide the detailed design process. We first analyzed the different modes of the 3×3 circular patch array, further reduced the size of the surrounding patch to increase the required omnidirectional mode bandwidth, further reduced the cross-polarization by adjusting the distance between the four corner patch and the central patch, and finally increased the number of surrounding patches to increase the bandwidth and gain. The entire analysis and optimization process uses the CMA. The antenna was excited by a single probe, with good omnidirectionality, low cross-polarization, and broad operating bandwidth in (5-12.7) GHz, achieving 87% relative bandwidth and peak gain of 4.1 dBi. The antenna has a radius of 27 mm and a thickness of 4.5 mm. A transparent and flexible antenna sample was fabricated on a flexible polydimethylsiloxane (PDMS) substrate using electrohydrodynamic (EHD) printing technology. The optical transmittance of the horseshoe-structured metal grids fabricated by EHD was investigated, as well as the equivalent surface resistance evaluation method. The theoretical optical transmittance of the horseshoe-structured single-layer silver grid on the PDMS substrate was 81.2%, versus 80.8% measured value, with an equivalent surface resistance of roughly 5 Ω/◻. The proposed antenna was bent on a 50 mm-radius cylinder surface and retained excellent omnidirectionality.

High-performance flexible broadband photodetectors enabled by 2D Ta2NiSe5 nanosheets

Flexible broadband optoelectronic devices play a prominent role in the areas of daily life including wearable optoelectronic systems, health care, and bio-imaging systems. Two-dimensional (2D) narrow-bandgap materials with atomic thickness, adjustable bandgap, mechanical flexibility, as well as excellent optical and electrical properties exhibit great potential for applications in flexible optoelectronic devices. Here, we demonstrate a high-performance photodetector based on high-quality ternary Ta2NiSe5 nanosheets with a narrow bandgap of 0.25 eV. The photodetectors exhibit broadband photodetection capability in the visible-infrared (IR) spectrum (405–2200 nm) at room temperature. The maximum values of responsivity can reach up to 280 A W−1 at the wavelength of 405 nm. Meanwhile, the high responsivity of 63.9 A W−1 and detectivity of 3.8 × 109 Jones are achieved at the wavelength of 2200 nm, respectively. In addition, the obtained Ta2NiSe5-based photodetector shows excellent flexibility and the photodetection performance is almost insignificantly degraded after 1000 bending cycles. These results indicate that the 2D Ta2NiSe5 semiconductor has great potential in future wearable IR optoelectronic devices.

Highly stable, substrate-free, and flexible broadband halide perovskite paper photodetectors.

In this work, we aim to fabricate a highly stable and flexible perovskite paper photodetector based on a Zn-doped MA0.6FA0.4PbI3 perovskite and CNC. The paper photodetector has been successfully synthesized by the vacuum filtration method and deposited with interdigitated electrodes. The paper photodetector exhibits a significant photoresponse with a responsivity of 0.23 A W-1 under 650 nm light irradiation when operated at 5 V. The stability of the paper photodetector has also been tested and it shows high photoresponse after 30 days under ambient conditions. Therefore, this paper photodetector holds promise for developing efficient, stable, and flexible optoelectronic devices in the future.

A Comprehensive Study on Next-Generation Electromagnetics Devices and Techniques for Internet of Everything (IoE)

Evolution of mobile broadband is ensured by adopting a unified and more capable radio interface (RI). For ubiquitous connectivity among a wide variety of wireless applications, the RI enables the adoption of an adaptive bandwidth with high spectrum flexibility. To this end, the modern-day communication system needs to cater to extremely high bandwidth, starting from below 1 GHz to 100 GHz, based on different deployments. This instigates the creation of a platform called the Internet of Everything (IoE), which is based on the concept of all-round connectivity involving humans to different objects or things via sensors. In simple words, IoE is the intelligent connection of people, processes, data, and things. To enable seamless connectivity, IoE resorts to low-cost, compact, and flexible broadband antennas, RFID-based sensors, wearable electromagnetic (EM) structures, circuits, wireless body area networks (WBAN), and the integration of these complex elements and systems. IoE needs to ensure broader information dissemination via simultaneous transmission of data to multiple users through separate beams and to that end, it takes advantage of metamaterials. The precise geometry and arrangement of metamaterials enable smart properties capable of manipulating EM waves and essentially enable the metamaterial devices to be controlled independently to achieve desirable EM characteristics, such as the direction of propagation and reflection. This review paper presents a comprehensive study on next-generation EM devices and techniques, such as antennas and circuits for wearable and sub 6 GHz 5G applications, WBAN, wireless power transfer (WPT), the direction of arrival (DoA) of propagating waves, RFID based sensors for biomedical and healthcare applications, new techniques of metamaterials as well as transformation optics (TO) and its applications in designing complex media and arbitrary geometry conformal antennas and optical devices that will enable future IoE applications.

Band alignment study of 2D-2D heterointerface of MoSe2 with Ti3C2Tx (transport layer) for flexible broadband photodetection

This work signifies the band alignment study of solution processed MoSe2 with MXene (Ti3C2Tx) using Ultraviolet Photoelectron Spectroscopy and utilizing the same for broadband photodetection. Based on the work function values calculated from ultraviolet photoelectron spectroscopy (UPS), MXene functions as an excellent transport layer for the photogenerated excitons generated in MoSe2. Due to the wideband absorbance of MoSe2, the photodetection experiments were carried out from the visible to NIR range (554 nm–780 nm). To examine the heterointerface's band alignment and carrier migration mechanism between MoSe2 and MXene, work function values were extracted from UPS and used to understand the actual energy band diagram of the MoSe2/MXene interface. The fabricated MoSe2/MXene photodetector exhibits Responsivity of 6.58 mA/W and 9.82 mA/W for visible and NIR light illumination supporting that the fabricated device has a high response to the NIR spectrum due to its high absorption at NIR light incidence. The durability of the MoSe2/MXene photodetector was tested four times by examining the device response, wherein change in the Responsivity values was observed to be negligible. Understanding the band alignment of heterostructure through proper extraction of the work function values from UPS is a step ahead in choosing perfect materials for photodetection and optoelectronic applications.