Flashlamp Research Articles

Flexible Micro‐Supercapacitors with Enhanced Energy Density Utilizing Flash Lamp Annealed Graphene‐Carbon Nanotube Composite Electrodes

AbstractAs demand for micro‐power sources grows, micro‐supercapacitors (MSCs) have become critical for miniaturized devices, offering robust electrochemical energy storage. However, the challenge remains to develop a simple, scalable fabrication method that achieves both high energy and power densities. In this study, we present a refined approach to fabricating MSCs with 3D interconnected graphene/carbon nanotube (CNT) composite electrodes. Our method combines flash lamp annealing (FLA) and laser ablation, where FLA converts graphene oxide (GO) and CNT composite films into 3D‐structured graphene/CNT electrodes, and laser ablation precisely patterns them into interdigitated designs. This dual‐process technique produces MSCs with exceptional electrochemical performance, including an impressive areal capacitance of 26.11 mF/cm2 and a volumetric capacitance of 31.88 F/cm3. These devices also achieve energy densities of 3.72 μWh/cm2 and 4.43 mWh/cm3, maintaining 97 % of their initial capacitance under extreme bending, demonstrating outstanding mechanical flexibility and durability. Furthermore, the scalability of this method was validated by configuring MSCs in series and parallel, achieving enhanced voltage and current outputs without additional interconnections. Overall, the integration of FLA and laser ablation holds significant promise for advancing the performance and scalability of micro‐sized energy storage devices, addressing the growing need for efficient, flexible, and high‐capacity micro‐power sources.

Thermal characterization of Xenon-Arc flash lamp heating system for automated fiber placement (AFP) of thermoplastic composites

Thermal characterization of Xenon-Arc flash lamp heating system for automated fiber placement (AFP) of thermoplastic composites

Optimization of thermal shock response spectrum as infrared thermography post-processing methodology using Latin hypercube sampling and analytical thermal N-layer model

In this work, we continue to develop and investigate the Thermal Shock Response Spectrum (TSRS) method as an alternative data processing method for infrared thermography (IRT). We focus on improving the current TSRS algorithm and present an optimization methodology for finding the optimal thermal Q-factor and characteristic frequency pair, which is based on the widely applied random sampling method. We show the qualitative relationship between the determined optimal characteristic frequency and the corresponding maximum difference in diffusion length between reference and defective models, as calculated by selecting a specific one-dimensional thermal N-layer model The investigations were performed on an inhomogeneous plate made of carbon fiber reinforced polymer (CFRP) with artificial square defects at different depths. Furthermore, two different heat sources were used: a xenon flash lamp and a laser. These sources are not only distinct by their underlying physics but also generate inherently different pulse shapes. To quantitatively estimate the contrast between defect and non-defect areas, and to compare these results with commonly used infrared thermography (IRT) data post-processing methods such as Pulse Phase Thermography (PPT) and Thermographic Signal Reconstruction (TSR), the Tanimoto criterion (TC) and signal-to-noise ratio (SNR) were used.

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

We investigated the properties of polycrystalline silicon (poly-Si) films formed by the flash lamp annealing (FLA) of hydrogenated amorphous Si (a-Si:H) films. Phosphorus- (P-) doped a-Si:H films with a thickness of several micrometers deposited by catalytic chemical vapor deposition (Cat-CVD) on a silicon nitride- (SiN x -) coated textured glass substrate are crystallized by FLA. P doping was achieved by flowing phosphine (PH3) during Cat-CVD, and the P concentration was controlled within a range of 1016–1021 cm−3, which was measured by secondary ion mass spectrometry. We also fabricated simple back-contact Si heterojunction solar cells to estimate a potential of flash-lamp-crystallized poly-Si as an absorption layer. The current-density–voltage (J–V) characteristics of the cells measured under 1 Sun light irradiation show an open-circuit voltage (V OC) of >0.4 V.

Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing

We report the use of a low-thermal-budget annealing technique; flash lamp annealing (FLA), which provides an extremely short annealing time in the millisecond range, on the ferroelectric properties of Al-doped HfO2 (HAO) films. HAO annealed at 1000 °C with 5 ms shows a higher remanent polarization value of 24.9 μC cm−2 compared to rapid thermal annealing (RTA), without degradation of endurance. GIXRD shows a stronger peak intensity originating from the orthorhombic (o-) phase and is observed when using FLA, indicating the formation of a larger amount of the o-phase. We believe that this is a consequence of the low thermal budget of FLA, and that specifically FLA can minimize the relaxation of the compressive stress in the TiN electrodes, inducing a high tensile stress to the HAO films and therefore an enhancement of o-phase formation. These results indicate that FLA is a promising annealing method for HAO crystallization due to the enhancement of o-phase formation.

Achieving ultralow contact resistivity in Si via Te hyperdoping and millisecond post-metallization annealing

Achieving extremely low specific contact resistance (ρc) has become a critical challenge for nanoelectronics to achieve high device performance with increased miniaturization. In this work, we explore the use of Tellurium hyperdoping and millisecond-range post-metallization flash lamp annealing as a potential solution to overcome this bottleneck. The epitaxially-resolidified hyperdoped Si layers with tunable carrier densities approaching 1021 cm−3 are achieved, which consequently alters the band diagrams as simulated by COMSOL Multiphysics®. This results in a sufficiently narrow Schottky barrier, which enables electron tunneling and can ultimately achieve extremely low ρc on the order of 10−9 Ω·cm2 in an Au/Ti/Te-hyperdoped Si junction. This study introduces an alternative fabrication process for Schottky barrier engineering, providing a viable method for the realization of future miniaturized nanoelectronics devices with high carrier density and extremely low ρc.

Milliseconds Thermal Processing of Boron Hyperdoped Germanium

P‐type hyperdoped germanium (Ge) has attracted significant attention for the development of superconducting semiconductors. However, the limited solid solubility of acceptors, especially boron (B), in Ge makes hyperdoping challenging. Herein, a systematic study on the electrical properties of boron‐implanted germanium is presented with an atomic concentration beyond 10 at%. The B‐implanted Ge was annealed by millisecond flash lamp annealing (ms‐FLA) with different parameters. The results indicate that millisecond solid phase epitaxy ensures the electrical activation of B much above the solubility limit with hole concentration as high as 2 × 1021 cm−3 and low‐temperature sheet resistance of 13 Ω sq−1 which is promising for superconductivity. It is also shown that millisecond annealing effectively suppresses the B diffusion and provides much higher activation efficiency of acceptors compared to conventional annealing methods.

Unsupervised learning-enabled pulsed infrared thermographic microscopy of subsurface defects in stainless steel

Metallic structures produced with laser powder bed fusion (LPBF) additive manufacturing method (AM) frequently contain microscopic porosity defects, with typical approximate size distribution from one to 100 microns. Presence of such defects could lead to premature failure of the structure. In principle, structural integrity assessment of LPBF metals can be accomplished with nondestructive evaluation (NDE). Pulsed infrared thermography (PIT) is a non-contact, one-sided NDE method that allows for imaging of internal defects in arbitrary size and shape metallic structures using heat transfer. PIT imaging is performed using compact instrumentation consisting of a flash lamp for deposition of a heat pulse, and a fast frame infrared (IR) camera for measuring surface temperature transients. However, limitations of imaging resolution with PIT include blurring due to heat diffusion, sensitivity limit of the IR camera. We demonstrate enhancement of PIT imaging capability with unsupervised learning (UL), which enables PIT microscopy of subsurface defects in high strength corrosion resistant stainless steel 316 alloy. PIT images were processed with UL spatial–temporal separation-based clustering segmentation (STSCS) algorithm, refined by morphology image processing methods to enhance visibility of defects. The STSCS algorithm starts with wavelet decomposition to spatially de-noise thermograms, followed by UL principal component analysis (PCA), fine-tuning optimization, and neural learning-based independent component analysis (ICA) algorithms to temporally compress de-noised thermograms. The compressed thermograms were further processed with UL-based graph thresholding K-means clustering algorithm for defects segmentation. The STSCS algorithm also includes online learning feature for efficient re-training of the model with new data. For this study, metallic specimens with calibrated microscopic flat bottom hole defects, with diameters in the range from 203 to 76 µm, were produced using electro discharge machining (EDM) drilling. While the raw thermograms do not show any material defects, using STSCS algorithm to process PIT images reveals defects as small as 101 µm in diameter. To the best of our knowledge, this is the smallest reported size of a sub-surface defect in a metal imaged with PIT, which demonstrates the PIT capability of detecting defects in the size range relevant to quality control requirements of LPBF-printed high-strength metals.

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation.

Zinc oxide (ZnO) is a wide bandgap semiconductor that holds significant potential for various applications. However, most of the native point defects in ZnO like Zn interstitials typically cause an n-type conductivity. Consequently, achieving p-type doping in ZnO is challenging but crucial for comprehensive applications in the field of optoelectronics. In this work, we investigated the electrical and optical properties of ex situ doped p-type ZnO films. The p-type conductivity has been realized by ion implantation of group V elements followed by rapid thermal annealing (RTA) for 60 s or flash lamp annealing (FLA) on the millisecond time scale in nitrogen or oxygen ambience. The phosphorus (P)-doped ZnO films exhibit stable p-type doping with a hole concentration in the range of 1014 to 1018 cm-3, while antimony (Sb) implantation produces only n-type layers independently of the annealing procedure. Microstructural studies of Sb-doped ZnO show the formation of metallic clusters after ms range annealing and SbZn-oxides after RTA.

Electro-optical Q-switched laser array with one lamp pumping six Nd:YAG rods for programmable laser reconstruction in space-power-time domains

We report a novel laser array with one lamp pumping six Nd:YAG rods for programmable laser reconstruction in space-power-time domains. A sextuple ellipse pump cavity is proposed, and this scheme permits one xenon flash lamp with advantageously cylindrical pumping characteristics to simultaneously efficiently pump multiple Nd:YAG lasers in a laser system. The experimental setup was designed, and further experiments were carried out. The laser array can stably operate at a pumping rate of 1 Hz-10 Hz. Each laser beam of the six laser outputs has a divergence angle of less than 1.7 mrad, an output pulse of greater than 208 mJ, and a pulse width of approximately 10 ns, corresponding to a pulse peak power of approximately 20 MW. The laser array has a total output energy of 1.53 J at an electrical input of 93.3 J, corresponding to an overall electro-optical conversion efficiency of 1.64 % and an electro-optical slope efficiency of 3.17 %. Finally, laser array output pulses coded modulation in the space-power-time domains are achieved by electro-optical Q-switching. Therefore, the laser array provides the capability for programmable laser reconstruction in the space-power-time domains in a laser system for multipurpose applications, such as energy-tailored material processing, coded pulse laser ranging for improved signal-to-noise ratio (SNR), active optical remote sensing and scientific research.

Efficacy and safety of intense pulsed light in rosacea: A systematic review.

Background Rosacea is a chronic inflammatory disease of the skin characterised by facial erythema, oedema, telangiectasias, papules, pustules and nodules. There is a paucity of effective therapeutic modalities for the management of rosacea. Intense Pulsed Light (IPL), a modality in which flash lamps installed in an optical treatment device (head or tip) with mirrors to reflect light, has in recent times gained popularity in the management of this condition. Aim This systematic review aims to evaluate the efficacy, safety and adverse effects of IPL treatment for rosacea. Methods This systematic review was conducted in accordance with the Preferred Reporting Item for Systematic Reviews and Meta-Analysis. The electronic databases searched were Medline, PubMed and Scopus databases. The Risk of bias in non-randomised studies of interventions (ROBINS-I) and risk-of-bias tools for randomised trials (RoB-2) was employed to assess the risk of bias. Results Of a total of 233 articles retrieved from Medline, Scopus and PubMed databases, 14 studies qualified for final analysis. The studies included patients with Fitzpatrick skin types I to IV, with ages ranging from 15 to 78 years. Although the included studies showed heterogeneity between the parameters used, most studies demonstrated positive effects of IPL treatment on telangiectasia and erythema in rosacea and that the adverse effects presented were transitory. Limitation The methodological quality of the included studies was poor. Conclusion Although most studies showed the efficacy of IPL in the treatment of rosacea, the poor quality of the studies was of concern.

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Nanostructured silicon can reduce reflectance loss in optoelectronic applications, but intrinsic silicon cannot absorb photons with energy below its 1.1 eV bandgap. However, incorporating a high concentration of dopants, i.e., hyperdoping, to nanostructured silicon is expected to bring broadband absorption ranging from UV to short‐wavelength IR (SWIR, <2500 nm). In this work, we prepare nanostructured silicon using cryogenic plasma etching, which is then hyperdoped with selenium (Se) through ion implantation. Besides sub‐bandgap absorption, ion implantation forms crystal damage, which can be recovered through flash lamp annealing. We study crystal damage and broadband (250–2500 nm) absorption from planar and nanostructured surfaces. We first show that nanostructures survive ion implantation hyperdoping and flash lamp annealing under optimized conditions. Secondly, we demonstrate that nanostructured silicon has a 15% higher sub‐bandgap absorption (1100–2500 nm) compared to its non‐hyperdoped nanostructure counterpart while maintaining 97% above‐bandgap absorption (250–1100 nm). Lastly, we simulate the sub‐bandgap absorption of hyperdoped Si nanostructures in a 2D model using the finite element method. Simulation results show that the sub‐bandgap absorption is mainly limited by the thickness of the hyperdoped layer rather than the height of nanostructures.

Rapid fabrication of binder free nickel cobalt oxide electrodes with dendritic nanostructure for electrochemical energy storage applications

A rapid and facile technique to synthesize nickel cobalt oxide electrodes by photothermal treatment of mixed organometallic precursor solution is reported. Using short and intense pulses of light from a xenon flash lamp, spray coated films are converted into porous nickel cobalt oxide electrodes with dendritic nanostructure. The electrode films fabricated in a few seconds show excellent energy storage properties as supercapacitor electrodes. Specific capacitance of up to 116 Fg−1 and capacitance retention of up to 75 % were observed in samples with low mass loading. Analysis of the cyclic voltammetry (CV) curves shows that capacitance is the dominating charge storage mechanism in these films. To study the effect of varying the mass loading in electrodes, double and triple layered electrodes were also studied. In films with high mass loading, the specific capacitance of the films decreased but areal capacitance continued to increase. A high areal capacitance of up to 243 mFcm−2 is observed in films with high mass loading. CV curve analysis of high mass loading electrodes further shows that in films with higher mass loading, the charge storage mechanism is a mix of capacitance and diffusion processes. The contribution of diffusion increased with increase in the mass loading of the electrodes. This study sheds light into the mechanism of charge storage in electrodes prepared by large-scale-amenable single step process of photonic curing which could be utilized to fabricate electrodes in industrial scale.

Impact of the thermal afterglow effect on infrared thermography data evaluation methods

In this work, the influence of the afterglow effects from a source impulse on commonly used data processing methods of infrared thermography (IRT), such as Pulsed Phase Thermography (PPT) and Thermographic Signal Reconstruction (TSR) was investigated. To resolve this issue, we propose the adoption of a modified mathematical model or an empirical function to approximate the flash lamp pulse, which we recorded during the test with a photodiode. Two models were evaluated: one consisting of a combination of exponential and power functions describing the entire pulse and a second, focusing only on the decreasing phase. The models were compared with well-established empirical functions, such as those of Degiovanni and Vageswar, using the widely known statistical scores R2adjusted and Akaike information criterion. The quantitative comparison revealed better fitting results for our proposed models. Additionally, we introduce an algorithm based on Hough transform-clustering for automated determination of the exact pulse length. Statistical analyses were performed to evaluate the reproducibility of the measured pulse shape. The results from applying the first model as pulse correction is compared to another widespread IR data treatment methodology, such as Modified Differential Absolute Contrast (MDAC). We also consider the impact of the afterglow effects on the Source Distribution Image (SDI). Two different specimens were used in the experiments: a homogeneous polymer sheet with blind holes as defects and an in-homogeneous plate made of carbon fiber reinforced polymer (CFRP) with artificial defects made from Tetrafluorethylen-Hexafluorpropylen-Copolymer (FEP) foil inserts. In both experiments a quantitative comparison was made using the Tanimoto criterion (TC), indicating an improved sensitivity. This work forms the basis for a faster and more reliable quantitative evaluation of experimental data, in particular algorithms for the automated detection and assessment of manufacturing defects or in-service damage will benefit from these results.

Rapid, Direct Fabrication of Thermochromic Ceramic Composite Sensors via Flash Lamp Annealing

An inorganic, high‐temperature (≈600 °C) thermochromic sensor is synthesized from a chemically bonded ceramic composite. The ceramic composite is composed of thermochromic 10 wt% chromium‐doped alumina (Cr:Al2O3) powder blended with a low‐reacting temperature (around 250 °C) phosphate binder, Al(H2PO4)3, (aluminum dihydrogen phosphate [ADP]). Cr‐doped alumina exhibits thermochromism at high temperatures, typically around 500–600 °C. Previously, infrared (IR) irradiation has been used to successfully convert ADP to an aluminum phosphate (AlPO4) ceramic phase that can bind ceramic components together. Here, an ultrahigh‐power (tens of kilowatts per square centimeter) flash lamp annealing (FLA) system is evaluated as an alternative photonic heating process to rapidly transform ADP to this ceramic. While IR lamps require 30 min to fully transform the ADP binder, FLA processes require less than 1 min and provide more dense microstructures, opening opportunities to additively manufacture ceramic components without the need for a post‐processing heating step. Final ceramics exhibit reversible thermochromic behavior, transitioning from pink to dark gray as the temperature increases from 25 to 600 °C. Here, the ability to use this technology to fabricate a temperature warning system for heated objects that are not yet emitting significant visible black‐body radiation is demonstrated.

Charge transport in n-type As- and Sb-hyperdoped Ge

This paper presents a systematic study of the charge transport behavior of heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize the n++ Ge layers (Ge:As and Ge:Sb). The resulting materials contain free electrons with a density above 3 × 1019 cm−3 and mobility more than 220 cm2/(V s). Quantum corrections to the conductance in a magnetic field are observed at low temperatures. Weak localization persists up to 30 K in Ge:Sb, while only up to 10 K in Ge:As. Using the Hikami–Larkin–Nagaoka model to fit the magnetoconductance data, we obtain the phase coherence length lϕ of the hyperdoped Ge samples in the range of 70–163 nm. This study may pave a way to explore possible applications for quantum technologies utilizing As- and Sb-hyperdoped Ge.

Usage of Energy Storage Capacitors in TE Gas Laser Pulsers

An energy storage capacitor is crucial for both electrically pumped and optically pumped pulsed lasers. In electrically pumped lasers, the energy stored in the capacitors is directly deposited into the lasing medium, while in optically pumped lasers, it energizes the flash lamp that, in turn, pumps the lasing medium. We discuss here the application of energy storage capacitors in the operation of electrically pumped pulsed gas lasers. Increasing the operating pressure of the gain medium, a prerequisite for obtaining higher energy from the laser, has resulted in great advancements in the gas laser pulse technology. This progress has led to the development of transverse electric discharge pumping, enabling easy scalability of gas pressure and achievable output power. An ideal TE pulser efficiently charges the capacitor to an appropriate voltage with minimal energy dissipation on the charging element and facilitates a rapid and uniform transfer of this stored energy into the lasing medium before a glow-to-arc transition can set in. Various types of pulser circuits employed to energize pulsed gas lasers are described in this paper.

Crystallization of piezoceramic films on glass via flash lamp annealing

Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for the growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. The functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 °C. A surface haptic device was fabricated with a 1 μm-thick film (piezoelectric e33,f of −5 C m−2). Its ultrasonic surface deflection reached 1.5 μm at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass.

Immunoassay System Based on the Technology of Time-Resolved Fluorescence Resonance Energy Transfer.

To enhance the specificity and sensitivity, cut the cost, and realize joint detection of multiple indicators, an immunoassay system based on the technology of time-resolved fluorescence resonance energy transfer (TR-FRET) was studied. Due to the FRET of the reagent, the donor probe and acceptor probe emitted specific fluorescence to enhance specificity. Long-lifetime specific fluorescence from the acceptor probe was combined with time-resolved technology to enhance sensitivity. A xenon flash lamp and a photomultiplier tube (PMT) were selected as the light source and detector, respectively. A filter-switching mechanism was placed in the light path, so the fluorescence signal from the donor and acceptor was measured alternately. The instrument's design is given, and some specificI parts are described in detail. Key technical specifications of the instrument and procalcitonin (PCT), C-reactive protein (CRP), and interleukin-6(IL-6) were tested, and the test results were presented subsequently. The CV value of the self-designed counting module is better than 0.01%, and the instrument noises for 620 nm and 665 nm are 41.44 and 10.59, respectively. When set at 37 °C, the temperature bias (B) is 0.06 °C, and the temperature fluctuation is 0.10 °C. The CV and bias are between ±3% and 5%, respectively, when pipetting volumes are between 10 μL and 100 μL. Within the concentration range of 0.01 nM to 10 nM, the luminescence values exhibit linear regression correlation coefficients greater than 0.999. For PCT detection, when the concentration ranges from 0.02 ng/mL to 50 ng/mL, the correlation coefficient of linear fitting exceeds 0.999, and the limit of quantification is 0.096 ng/mL. For CRP and IL-6, the detection concentration ranges from 0 ng/mL to 500 ng/mL and 0 ng/mL to 20 ng/mL, respectively, with limits of quantification of 2.70 ng/mL and 2.82 ng/mL, respectively. The experimental results confirm the feasibility of the technical and instrumental solutions.

Evaluating Mass Spectrometry-Based Hydroxyl Radical Protein Footprinting of a Benchtop Flash Oxidation System against a Synchrotron X-ray Beamline.

Hydroxyl radical protein footprinting (HRPF) using synchrotron X-ray radiation (XFP) and mass spectrometry is a well-validated structural biology method that provides critical insights into macromolecular structural dynamics, such as determining binding sites, measuring affinity, and mapping epitopes. Numerous alternative sources for generating the hydroxyl radicals (•OH) needed for HRPF, such as laser photolysis and plasma irradiation, complement synchrotron-based HRPF, and a recently developed commercially available instrument based on flash lamp photolysis, the FOX system, enables access to laboratory benchtop HRPF. Here, we evaluate performing HRPF experiments in-house with a benchtop FOX instrument compared to synchrotron-based X-ray footprinting at the NSLS-II XFP beamline. Using lactate oxidase (LOx) as a model system, we carried out •OH labeling experiments using both instruments, followed by nanoLC-MS/MS bottom-up peptide mass mapping. Experiments were performed under high glucose concentrations to mimic the highly scavenging conditions present in biological buffers and human clinical samples, where less •OH are available for reaction with the biomolecule(s) of interest. The performance of the FOX and XFP HRPF methods was compared, and we found that tuning the •OH dosage enabled optimal labeling coverage for both setups under physiologically relevant highly scavenging conditions. Our study demonstrates the complementarity of FOX and XFP labeling approaches, demonstrating that benchtop instruments such as the FOX photolysis system can increase both the throughput and the accessibility of the HRPF technique.