Flash Lamp Annealing Research Articles

Flexible Micro‐supercapacitors with Enhanced Energy Density Utilizing Flash Lamp Annealed Graphene‐Carbon Nanotube Composite Electrodes

As demand for micro‐power sources grows, micro‐supercapacitors (MSCs) have become critical for miniaturized devices, offering robust electrochemical energy storage. However, the challenge remains to develop a simple, scalable fabrication method that achieves both high energy and power densities. In this study, we present a refined approach to fabricating MSCs with 3D interconnected graphene/carbon nanotube (CNT) composite electrodes. Our method combines flash lamp annealing (FLA) and laser ablation, where FLA converts graphene oxide (GO) and CNT composite films into 3D‐structured graphene/CNT electrodes, and laser ablation precisely patterns them into interdigitated designs. This dual‐process technique produces MSCs with exceptional electrochemical performance, including an impressive areal capacitance of 26.11 mF/cm2 and a volumetric capacitance of 31.88 F/cm3. These devices also achieve energy densities of 3.72 μWh/cm2 and 4.43 mWh/cm3, maintaining 97% of their initial capacitance under extreme bending, demonstrating outstanding mechanical flexibility and durability. Furthermore, the scalability of this method was validated by configuring MSCs in series and parallel, achieving enhanced voltage and current outputs without additional interconnections. Overall, the integration of FLA and laser ablation holds significant promise for advancing the performance and scalability of micro‐sized energy storage devices, addressing the growing need for efficient, flexible, and high‐capacity micro‐power sources.

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

Impact of Silver Incorporation and Flash-Lamp-Annealing on the Photocatalytic Response of Sputtered ZnO Films.

Thin films of silver-doped zinc oxide (SZO) were deposited at room temperature using a DC reactive magnetron co-sputtering technique using two independent Zn and Ag targets. The crystallographic structure, chemical composition and surface morphology of SZO films with different silver concentrations were correlated with the photocatalytic (PC) properties. The crystallization of the SZO films was made using millisecond range flash-lamp-annealing (FLA) treatments. FLA induces significant structural ordering of the wurtzite structure and an in-depth redistribution of silver, resulting in the formation of silver agglomerates. The wurtzite ZnO structure is observed for silver contents below 10 at.% where Ag is partially incorporated into the oxide matrix, inducing a decrease in the optical band-gap. Regardless of the silver content, all the as-grown SZO films do not exhibit any significant PC activity. The best PC response is achieved for samples with a relatively low Ag content (2-5 at.%) after FLA treatment. The enhanced PC activity of SZO upon FLA can be attributed to structural ordering and the effective band-gap narrowing through the combination of silver doping and the plasmonic effect caused by the formation of Ag clusters.

Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing

We report the use of a low-thermal-budget annealing technique; flash lamp annealing (FLA), which provides an extremely short annealing time in the millisecond range, on the ferroelectric properties of Al-doped HfO2 (HAO) films. HAO annealed at 1000 °C with 5 ms shows a higher remanent polarization value of 24.9 μC cm−2 compared to rapid thermal annealing (RTA), without degradation of endurance. GIXRD shows a stronger peak intensity originating from the orthorhombic (o-) phase and is observed when using FLA, indicating the formation of a larger amount of the o-phase. We believe that this is a consequence of the low thermal budget of FLA, and that specifically FLA can minimize the relaxation of the compressive stress in the TiN electrodes, inducing a high tensile stress to the HAO films and therefore an enhancement of o-phase formation. These results indicate that FLA is a promising annealing method for HAO crystallization due to the enhancement of o-phase formation.

Phase selectivity upon flash-lamp annealing of sputter deposited amorphous titanium oxide films

We report the impact of flash-lamp-annealing (FLA) on the structural evolution of amorphous titania (TiO2) films produced by DC reactive magnetron sputtering. TiO2 films were grown at room-temperature at different oxygen partial pressure (PO2) and subsequently annealed as a function of the FLA energy density. X-ray diffraction confirms that FLA induces phase formation from the initial amorphous state with a general transition from anatase to rutile by increasing the FLA energy density (temperature). Interestingly, the transformation onset of anatase to rutile is achieved at lower energy densities for higher PO2. On the contrary, films with a highly resilient anatase phase can be produced at relatively low PO2. A detailed analysis of the pristine amorphous structure carried out by X-ray absorption near-edge structure indicates the role of oxygen sites in the observed phase transformation. In particular, oxygen vacancies seem to stabilize the anatase phase at high temperatures. The results show the relevance of subtle changes in the initial amorphous structure for phase selectivity in TiO2 films upon FLA.

Milliseconds Thermal Processing of Boron Hyperdoped Germanium

P‐type hyperdoped germanium (Ge) has attracted significant attention for the development of superconducting semiconductors. However, the limited solid solubility of acceptors, especially boron (B), in Ge makes hyperdoping challenging. Herein, a systematic study on the electrical properties of boron‐implanted germanium is presented with an atomic concentration beyond 10 at%. The B‐implanted Ge was annealed by millisecond flash lamp annealing (ms‐FLA) with different parameters. The results indicate that millisecond solid phase epitaxy ensures the electrical activation of B much above the solubility limit with hole concentration as high as 2 × 1021 cm−3 and low‐temperature sheet resistance of 13 Ω sq−1 which is promising for superconductivity. It is also shown that millisecond annealing effectively suppresses the B diffusion and provides much higher activation efficiency of acceptors compared to conventional annealing methods.

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation.

Zinc oxide (ZnO) is a wide bandgap semiconductor that holds significant potential for various applications. However, most of the native point defects in ZnO like Zn interstitials typically cause an n-type conductivity. Consequently, achieving p-type doping in ZnO is challenging but crucial for comprehensive applications in the field of optoelectronics. In this work, we investigated the electrical and optical properties of ex situ doped p-type ZnO films. The p-type conductivity has been realized by ion implantation of group V elements followed by rapid thermal annealing (RTA) for 60 s or flash lamp annealing (FLA) on the millisecond time scale in nitrogen or oxygen ambience. The phosphorus (P)-doped ZnO films exhibit stable p-type doping with a hole concentration in the range of 1014 to 1018 cm-3, while antimony (Sb) implantation produces only n-type layers independently of the annealing procedure. Microstructural studies of Sb-doped ZnO show the formation of metallic clusters after ms range annealing and SbZn-oxides after RTA.

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Nanostructured silicon can reduce reflectance loss in optoelectronic applications, but intrinsic silicon cannot absorb photons with energy below its 1.1 eV bandgap. However, incorporating a high concentration of dopants, i.e., hyperdoping, to nanostructured silicon is expected to bring broadband absorption ranging from UV to short‐wavelength IR (SWIR, <2500 nm). In this work, we prepare nanostructured silicon using cryogenic plasma etching, which is then hyperdoped with selenium (Se) through ion implantation. Besides sub‐bandgap absorption, ion implantation forms crystal damage, which can be recovered through flash lamp annealing. We study crystal damage and broadband (250–2500 nm) absorption from planar and nanostructured surfaces. We first show that nanostructures survive ion implantation hyperdoping and flash lamp annealing under optimized conditions. Secondly, we demonstrate that nanostructured silicon has a 15% higher sub‐bandgap absorption (1100–2500 nm) compared to its non‐hyperdoped nanostructure counterpart while maintaining 97% above‐bandgap absorption (250–1100 nm). Lastly, we simulate the sub‐bandgap absorption of hyperdoped Si nanostructures in a 2D model using the finite element method. Simulation results show that the sub‐bandgap absorption is mainly limited by the thickness of the hyperdoped layer rather than the height of nanostructures.

Rapid, Direct Fabrication of Thermochromic Ceramic Composite Sensors via Flash Lamp Annealing

An inorganic, high‐temperature (≈600 °C) thermochromic sensor is synthesized from a chemically bonded ceramic composite. The ceramic composite is composed of thermochromic 10 wt% chromium‐doped alumina (Cr:Al2O3) powder blended with a low‐reacting temperature (around 250 °C) phosphate binder, Al(H2PO4)3, (aluminum dihydrogen phosphate [ADP]). Cr‐doped alumina exhibits thermochromism at high temperatures, typically around 500–600 °C. Previously, infrared (IR) irradiation has been used to successfully convert ADP to an aluminum phosphate (AlPO4) ceramic phase that can bind ceramic components together. Here, an ultrahigh‐power (tens of kilowatts per square centimeter) flash lamp annealing (FLA) system is evaluated as an alternative photonic heating process to rapidly transform ADP to this ceramic. While IR lamps require 30 min to fully transform the ADP binder, FLA processes require less than 1 min and provide more dense microstructures, opening opportunities to additively manufacture ceramic components without the need for a post‐processing heating step. Final ceramics exhibit reversible thermochromic behavior, transitioning from pink to dark gray as the temperature increases from 25 to 600 °C. Here, the ability to use this technology to fabricate a temperature warning system for heated objects that are not yet emitting significant visible black‐body radiation is demonstrated.

Charge transport in n-type As- and Sb-hyperdoped Ge

This paper presents a systematic study of the charge transport behavior of heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize the n++ Ge layers (Ge:As and Ge:Sb). The resulting materials contain free electrons with a density above 3 × 1019 cm−3 and mobility more than 220 cm2/(V s). Quantum corrections to the conductance in a magnetic field are observed at low temperatures. Weak localization persists up to 30 K in Ge:Sb, while only up to 10 K in Ge:As. Using the Hikami–Larkin–Nagaoka model to fit the magnetoconductance data, we obtain the phase coherence length lϕ of the hyperdoped Ge samples in the range of 70–163 nm. This study may pave a way to explore possible applications for quantum technologies utilizing As- and Sb-hyperdoped Ge.

Crystallization of piezoceramic films on glass via flash lamp annealing

Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for the growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. The functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 °C. A surface haptic device was fabricated with a 1 μm-thick film (piezoelectric e33,f of −5 C m−2). Its ultrasonic surface deflection reached 1.5 μm at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass.

Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing

In this study, we systematically studied the polarization properties of thin ferroelectric Hf0.5Zr0.5O2 (HZO) films annealed by flash lamp annealing (FLA). We have recently proposed a unique annealing method, two-step FLA, which features high temperature annealing with a minimal increase in thermal budget. Using this technique, we observed improvements in the polarization properties in 5 nm HZO films. These were an increase in the remanent polarization (2Pr) to 24.2 μC cm−2 and better durability compared with other more conventional annealing techniques. In addition, we confirmed that there was no clear degradation in 2Pr under thermal stress. Two-step FLA is one of the effective ways to obtain ferroelectricity with high values of 2Pr and good durability in HZO films thinner than 5 nm.

Study of flashlamp annealing to promote crystallization of indium tin oxide thin films

The use of flashlamp annealing as a low-temperature alternative or supplement to thermal annealing is investigated. Flashlamp annealing and thermal annealing were conducted on 100 nm thick indium tin oxide (ITO) films deposited on glass to compare the properties of films under different annealing methods. The ITO samples had an average initial sheet resistance of 50 Ω/sq. After flashlamp annealing, the sheet resistance was reduced to 33 Ω/sq only, while by thermal annealing at 210 °C for 30 min, a sheet resistance of 29 Ω/sq was achieved. Using a combination of flashlamp annealing and thermal annealing at 155 °C for 5 min, a sheet resistance of 29 Ω/sq was achieved. X-ray diffraction analysis confirmed that flashlamp annealing can be used to crystallize ITO. Flashlamp annealing allows for low-temperature crystallization of ITO on a time scale of 1–3 min. Through electrical and optical characterizations, it was determined that flashlamp annealing can achieve similar electrical and optical properties as thermal annealing. Flashlamp offers the method of low-temperature annealing, which is particularly suitable for temperature sensitive substrates.

Al-delta-doped ZnO films made by atomic layer deposition and flash-lamp annealing for low-emissivity coating

In this work, we have investigated and optimized the Al-delta-doped ZnO (δ -AZO) superlattices for mid-infrared applications. Thin films of δ -AZO are fabricated by atomic layer deposition (ALD) followed by millisecond-range (ms-range) flash-lamp annealing (FLA). During the FLA process, the superlattice structure is preserved and Al is electrically activated. The highest carrier concentration and lowest resistivity estimated from Hall-effect measurements are 2.7 × 1021 cm−3 and 8.8 × 10-4 Ωcm, respectively, for the δ -AZO superlattice with an Al:Zn ratio of 1:20. Moreover, glass substrates coated with the developed δ -AZO superlattice show a reflectance above 60 % in the near- and mid-infrared spectral range, while the transmittance in the visible range maintains above 80 %. The presented δ -AZO superlattice is a good alternative material to replace indium tin oxide films for cost-efficient low-emissivity glazing.

B20 Weyl Semimetal CoSi Film Fabricated by Flash-Lamp Annealing.

B20-CoSi is a newly discovered Weyl semimetal that crystallizes into a noncentrosymmetric crystal structure. However, the investigation of B20-CoSi has so far been focused on bulk materials, whereas the growth of thin films on technology-relevant substrates is a prerequisite for most practical applications. In this study, we have used millisecond-range flash-lamp annealing, a nonequilibrium solid-state reaction, to grow B20-CoSi thin films. By optimizing the annealing parameters, we were able to obtain thin films with a pure B20-CoSi phase. The magnetic and transport measurements indicate the appearance of the charge density wave and chiral anomaly. Our work presents a promising method for preparing thin films of most binary B20 transition-metal silicides, which are candidates for topological Weyl semimetals.

Influence of Thermal and Flash-Lamp Annealing on the Thermoelectrical Properties of Cu2ZnSnS4 Nanocrystals Obtained by "Green" Colloidal Synthesis.

The problem with waste heat in solar panels has stimulated research on materials suitable for hybrid solar cells, which combine photovoltaic and thermoelectric properties. One such potential material is Cu2ZnSnS4 (CZTS). Here, we investigated thin films formed from CZTS nanocrystals obtained by "green" colloidal synthesis. The films were subjected to thermal annealing at temperatures up to 350 °C or flash-lamp annealing (FLA) at light-pulse power densities up to 12 J/cm2. The range of 250-300 °C was found to be optimal for obtaining conductive nanocrystalline films, for which the thermoelectric parameters could also be determined reliably. From phonon Raman spectra, we conclude that in this temperature range, a structural transition occurs in CZTS, accompanied by the formation of the minor CuxS phase. The latter is assumed to be a determinant for both the electrical and thermoelectrical properties of CZTS films obtained in this way. For the FLA-treated samples, the film conductivity achieved was too low to measure the thermoelectric parameters reliably, although the partial improvement of the CZTS crystallinity is observed in the Raman spectra. However, the absence of the CuxS phase supports the assumption of its importance with respect to the thermoelectric properties of such CZTS thin films.

Millisecond flash lamp curing for porosity generation in thin films

Flash lamp annealing (FLA) with millisecond pulse durations is reported as a novel curing method for pore precursor's degradation in thin films. A case study on the curing of dielectric thin films is presented. FLA-cured films are being investigated by means of positron annihilation spectroscopy (PAS) and Fourier-transform infrared (FTIR) spectroscopy in order to quantify the nm-scale porosity and post-treatment chemistry, respectively. Results from positron annihilation reveal the onset of the formation of porous voids inside the samples at 6 ms flash treatment time. Moreover, parameter's adjustment (flash duration and energy density) allows for identifying the optimum conditions of effective curing. Within such a systematic investigation, positron results indicate that FLA is able to decompose the porogen (pore precursors) and to generate interconnected (open porosity) or isolated pore networks with self-sealed pores in a controllable way. Furthermore, FTIR results demonstrate the structural evolution after FLA, that help for setting the optimal annealing conditions whereby only a residual amount of porogen remains and at the same time a well-densified matrix, and a hydrophobic porous structures are created. Raman spectroscopy suggests that the curing-induced self-sealing layer developed at the film surface is a graphene oxide-like layer, which could serve as the outside sealing of the pore network from intrusions.

Zinc hybrid sintering for printed transient sensors and wireless electronics

Transient electronics offer a promising solution for reducing electronic waste and for use in implantable bioelectronics, yet their fabrication remains challenging. We report on a scalable method that synergistically combines chemical and photonic mechanisms to sinter printed Zn microparticles. Following reduction of the oxide layer using an acidic solution, zinc particles are agglomerated into a continuous layer using a flash lamp annealing treatment. The resulting sintered Zn patterns exhibit electrical conductivity values as high as 5.62 × 106 S m−1. The electrical conductivity and durability of the printed zinc traces enable the fabrication of biodegradable sensors and LC circuits: temperature, strain, and chipless wireless force sensors, and radio-frequency inductive coils for remote powering. The process allows for reduced photonic energy to be delivered to the substrate and is compatible with temperature-sensitive polymeric and cellulosic substrates, enabling new avenues for the additive manufacturing of biodegradable electronics and transient implants.

Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions

Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO. However, the ballistic nature of this process makes the use of annealing essential. The selection of implantation parameters, as well as post-implantation annealing, turns out to be non-trivial because they determine the luminous efficiency of the ZnO:RE system. This paper presents a comprehensive study of the optimal implantation and annealing conditions, ensuring the most efficient luminescence of RE3+ ions in the ZnO matrix. Deep and shallow implantations, implantations performed at high and room temperature with various fluencies, as well as a range of post-RT implantation annealing processes are tested: rapid thermal annealing (minute duration) under different temperatures, times, and atmospheres (O2, N2, and Ar), flash lamp annealing (millisecond duration) and pulse plasma annealing (microsecond duration). It is shown that the highest luminescence efficiency of RE3+ is obtained for the shallow implantation at RT with the optimal fluence of 1.0 × 1015 RE ions/cm2 followed by a 10 min annealing in oxygen at 800 °C, and the light emission from such a ZnO:RE system is so bright that can be observed with the naked eye.

Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing

We used millisecond flash lamp annealing (FLA) to form thin ferroelectric Hf0.5Zr0.5O2 (HZO) films with thicknesses of less than 10 nm and with remanent polarization up to 30 μC cm−2. A clear dependency of the polarization on the annealing temperature and time was observed, indicating that the precise management of the thermal budget is a key factor in forming ferroelectric HZO. We also show and compare the process windows within which ferroelectricity in 10 and 5 nm samples is obtained. The results show that a high thermal budget is necessary for thinner samples. We examined the endurance characteristics and a greater endurance compared to rapid thermal annealing treatment was observed with more than 1010 cycles without breakdown confirmed in 5 nm thick samples. The data indicates that there is the possibility of further thickness scaling whilst retaining highly durable characteristics for films annealed by FLA.