First-principles GW Research Articles

Halide Mixing in Cs2AgBi(I x Br1-x )6 Double Perovskites: A Pathway to Tunable Excitonic Properties.

Cs2AgBiBr6 is an emerging double perovskite semiconductor with robust stability. However, its potential for photovoltaics is limited by its indirect band gap and localized electronic structure featuring a resonant exciton with a large binding energy. Cs2AgBi(I x Br1-x )6 nanocrystals with iodide concentrations of up to 100% were recently demonstrated, but an atomistic understanding of how halide mixing affects the electronic and excited-state structure is missing. Here, we use first-principles GW and Bethe-Salpeter Equation calculations to show that halide mixing leads to a pronounced change in the band gap and character of optical excitations. Exciton binding energies are reduced by up to a factor of 5, with significantly more delocalized excitons in I-rich compounds. We further show that phase-pure bulk alloys with x ≤ 0.11 can be fabricated using mechanosynthesis and measure a red-shifted absorption in line with our calculations. Our study highlights that halide mixing in double perovskites can not only lead to significant band gap changes but may also be used for tuning excitonic properties.

Generalized Substrate Screening GW for Covalently Bonded Interfaces.

An accurate description of the interfacial quasiparticle electronic structure is key to the design of heterogeneous materials. While the first-principles GW approach is state-of-the-art, the computational cost is high for large interface systems. This has led to the substrate screening GW approach for weakly coupled interfaces, which breaks down for covalently bonded interfaces. In this work, we present the generalized substrate screening GW approach, based on the following two considerations: (i) the contribution of the interfacial covalent bond to the polarizability can be efficiently calculated with a low energy cutoff; (ii) the contribution of the deprotonated adsorbate to the interface polarizability can be well approximated by that of the protonated molecule. Our approach is exemplified using interfaces formed between benzene-1,4-dithiol (BDT) and Au(111), which feature the widely used Au-S bonds in experiments. Our work provides a robust and simple scheme for accurate and efficient GW calculations of covalently bonded interfaces.

Edge-Confined Excitons in Monolayer Black Phosphorus.

Quantum confinement of two-dimensional excitons in van der Waals materials via electrostatic trapping, lithographic patterning, Moiré potentials, and chemical implantation has enabled significant advances in tailoring light emission from nanostructures. While such approaches rely on complex preparation of materials, natural edges are a ubiquitous feature in layered materials and provide a different approach for investigating quantum-confined excitons. Here, we observe that certain edge sites of monolayer black phosphorus (BP) strongly localize the intrinsic quasi-one-dimensional excitons, yielding sharp spectral lines in photoluminescence, with nearly an order of magnitude line width reduction. Through structural characterization of BP edges using transmission electron microscopy and first-principles GW plus Bethe-Salpeter equation (GW-BSE) calculations of exemplary BP nanoribbons, we find that certain atomic reconstructions can strongly quantum-confine excitons resulting in distinct emission features, mediated by local strain and screening. We observe linearly polarized luminescence emission from edge reconstructions that preserve the mirror symmetry of the parent BP lattice, in agreement with calculations. Furthermore, we demonstrate efficient electrical switching of localized edge excitonic luminescence, whose sites act as excitonic transistors for emission. Localized emission from BP edges motivates exploration of nanoribbons and quantum dots as hosts for tunable narrowband light generation, with future potential to create atomic-like structures for quantum information processing applications as well as exploration of exotic phases that may reside in atomic edge structures.

Giant excitonic effects in vacancy-ordered double perovskites

Using first-principles GW plus Bethe-Salpeter equation calculations, we identify anomalously strong excitonic effects in several vacancy-ordered double perovskites Cs2MX6 (M = Ti, Zr; X = I, Br). Giant exciton binding energies about 1 eV are found in these moderate-gap, inorganic bulk semiconductors, pushing the limit of our understanding of electron-hole (e-h) interaction and exciton formation in solids. Not only are the exciton binding energies extremely large compared with any other moderate-gap bulk semiconductors, but they are also larger than typical 2D semiconductors with comparable quasiparticle gaps. Our calculated lowest bright exciton energy agrees well with the experimental optical band gap. The low-energy excitons closely resemble the Frenkel excitons in molecular crystals, as they are highly localized in a single [MX6]2- octahedron and extended in the reciprocal space. The weak dielectric screening effects and the nearly flat frontier electronic bands, which are derived from the weakly bonded [MX6]2- units, together explain the significant excitonic effects. Spin-orbit coupling effects play a crucial role in red-shifting the lowest bright exciton by mixing up spin-singlet and spin-triplet excitons, while exciton-phonon coupling effects have minor impacts on the strong exciton binding energies.

Rydberg Excitons and Trions in Monolayer MoTe2.

Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances, which serve as a microscopic, noninvasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS2, MoSe2, WS2, and WSe2), but detailed exploration of excitonic phenomena has been lacking in the important TMDC material molybdenum ditelluride (MoTe2). Here, we report an experimental investigation of excitonic luminescence properties of monolayer MoTe2 to understand the excitonic Rydberg series, up to 3s. We report a significant modification of emission energies with temperature (4 to 300 K), thereby quantifying the exciton-phonon coupling. Furthermore, we observe a strongly gate-tunable exciton-trion interplay for all the Rydberg states governed mainly by free-carrier screening, Pauli blocking, and band gap renormalization in agreement with the results of first-principles GW plus Bethe-Salpeter equation approach calculations. Our results help bring monolayer MoTe2 closer to its potential applications in near-infrared optoelectronics and photonic devices.

Ultrafast Spontaneous Localization of a Jahn-Teller Exciton Polaron in Two-Dimensional Semiconducting CrI3 by Symmetry Breaking.

The excited state species and properties in low-dimensional semiconductors can be completely redefined by electron-lattice coupling or a polaronic effect. Here, by combining ultrafast broadband pump-probe spectroscopy and first-principles GW and Bethe-Salpeter equation calculations, we show semiconducting CrI3 as a prototypical 2D polaronic system with characteristic Jahn-Teller exciton polaron induced by symmetry breaking. A photogenerated electron and hole in CrI3 localize spontaneously in ∼0.9 ps and pair geminately to a Jahn-Teller exciton polaron with elongated Cr-I octahedra, large binding energy, and an unprecedentedly small exciton-exciton annihilation rate constant (∼10-20 cm3 s-1). Coherent phonon dynamics indicates the localization is mainly triggered by the coherent nuclear vibration of the I-Cr-I out-of-plane stretch mode at 128.5 ± 0.1 cm-1. The excited state Jahn-Teller exciton polaron in CrI3 broadens the realm of 2D polaron systems and reveals the decisive role of coupled electron-lattice motion on excited state properties and exciton physics in 2D semiconductors.

2D Graphene-Like Pb-Free Perovskite Semiconductor CsSb(Br1-xIx)4 with Quasi-linear Electronic Dispersion and Direct Bandgap Close to Germanium.

Thanks to its ultrahigh carrier mobility (∼104-105 cm2 V-1 s-1), graphene shows tremendous application potential in nanoelectronics, but it cannot be applied in effective field-effect transistors (FETs) because of its intrinsic gapless band structure. Thus, introducing a bandgap for graphene is a prerequisite to realize an FET for logic applications. Herein, through first-principles GW calculations, we have predicted a series of novel Dion-Jacobson (DJ) phase halide perovskite semiconductors CsSb(Br1-xIx)4 (x = 0, 0.5, 1) with the quasi-linear (graphene-like) band edge dispersion; as the best one of which, CsSbBr2I2 exhibits a direct bandgap (0.52 eV) as well as a quasi-linear electronic dispersion, yielding an ultrasmall carrier effective mass (0.03 m0) and a high estimated carrier mobility (5 × 103 cm2 V-1 s-1). This gives a significant reference to the exploration of semiconductors with excellent transport properties. Moreover, our calculations also implicate that the DJ perovskites CsSb(Br1-xIx)4 (x = 0, 0.25, 0.5, 0.75, 1) show soft and anisotropic mechanical characteristics as well as excellent electronic, transport, and optical properties, which demonstrate their multifunctional application in infrared optoelectronic, high-speed electronics, and photovoltaics.

Intervalley Excitonic Hybridization, Optical Selection Rules, and Imperfect Circular Dichroism in Monolayer h-BN.

We perform first-principles GW plus Bethe-Salpeter equation calculations to investigate the photophysics of monolayer hexagonal boron nitride (h-BN), revealing excitons with novel k-space characteristics. The excitonic states forming the first and third peaks in its absorption spectrum are s-like, but those of the second peak are notably p-like, a first finding of strong co-occurrence of bright s-like and bright p-like states in an intrinsic 2D material. Moreover, even though the k-space wave function of these excitonic states are centered at the K and K^{'} valleys as in monolayer transition metal dichalcogenides, the k-space envelope functions of the basis excitons at one valley have significant extents to the basin of the other valley. As a consequence, the optical response of monolayer h-BN exhibits a lack of circular dichroism, as well as a coupling that induces an intervalley mixing between s- and p-like states.

Spin splitting of dopant edge state in magnetic zigzag graphene nanoribbons.

Spin-ordered electronic states in hydrogen-terminated zigzag nanographene give rise to magnetic quantum phenomena1,2 that have sparked renewed interest in carbon-based spintronics3,4. Zigzag graphene nanoribbons (ZGNRs)-quasi one-dimensional semiconducting strips of graphene bounded by parallel zigzag edges-host intrinsic electronic edge states that are ferromagnetically ordered along the edges of the ribbon and antiferromagnetically coupled across its width1,2,5. Despite recent advances in the bottom-up synthesis of GNRs featuring symmetry protected topological phases6-8 and even metallic zero mode bands9, the unique magnetic edgestructure of ZGNRs has long been obscured from direct observation by a strong hybridization of the zigzag edge states with the surface states of the underlying support10-15. Here, we present a general technique to thermodynamically stabilize and electronically decouple the highly reactive spin-polarized edge states by introducing a superlattice of substitutional N-atom dopants along the edges of a ZGNR. First-principles GW calculations and scanning tunnelling spectroscopy reveal a giant spin splitting of low-lying nitrogen lone-pair flat bands by an exchange field (~850tesla) induced by the ferromagnetically ordered edge states of ZGNRs. Our findings directly corroborate the nature of the predicted emergent magnetic order in ZGNRs and provide a robust platform for their exploration and functional integration into nanoscale sensing and logic devices15-21.

Quasiparticle electronic structure of two-dimensional heterotriangulene-based covalent organic frameworks adsorbed on Au(111)

The modular nature and unique electronic properties of two-dimensional (2D) covalent organic frameworks (COFs) make them an attractive option for applications in catalysis, optoelectronics, and spintronics. The fabrications of such devices often involve interfaces formed between COFs and substrates. In this work, we employ the first-principles GW approach to accurately determine the quasiparticle electronic structure of three 2D carbonyl bridged heterotriangulene-based COFs featuring honeycomb–kagome lattice, with their properties ranging from a semi-metal to a wide-gap semiconductor. Moreover, we study the adsorption of these COFs on Au(111) surface and characterize the quasiparticle electronic structure at the heterogeneous COF/Au(111) interfaces. To reduce the computational cost, we apply the recently developed dielectric embedding GW approach and show that our results agree with existing experimental measurement on the interfacial energy level alignment. Our calculations illustrate how the many-body dielectric screening at the interface modulates the energies and shapes of the Dirac bands, the effective masses of semiconducting COFs, as well as the Fermi velocity of the semi-metallic COF.

Quasiparticle band structures of bulk and few-layer PdSe2 from first-principles GW calculations

We performed first-principles density functional theory (DFT) and GW calculations to investigate electronic structures of bulk and few-layer PdSe2. We obtained the quasiparticle band structure of bulk PdSe2, and the obtained energy gap agrees excellently with the reported experimental value. For monolayer and bilayer PdSe2, we obtained quasiparticle band structures with respect to the vacuum level. We analyzed DFT and GW band structures in detail, finding k-space positions of valence band maxima and conduction band minima, effective masses, the quasiparticle density of states, work functions, ionization potentials, electron affinities, and k-space shapes of electron and hole pockets. These results provide a foundation for development of basic studies and device applications.

Accuracy trade-off between one-electron and excitonic spectra of cuprous halides in first-principles calculations.

Because of the sophisticated error cancellation in the density functional theory (DFT)-based calculations, a theoretically more accurate input would not guarantee a better output. In this work, our first-principles GW plus Bethe-Salpeter equation calculations using pseudopotentials show that cuprous halides (CuCl and CuBr) are such extreme cases for which a better one-electron band is not accompanied with a better exciton binding energy. Moreover, we find that the exchange interaction of Cu core electrons plays a crucial role in their ground-state electronic properties, especially in the energy gap and macroscopic dielectric constant. Our work provides new insights into the understanding of the electronic structure of cuprous halides from the DFT perspective.

Electronic and optical properties of monolayer tin diselenide: The effect of doping, magnetic field, and defects

A parameterized tight-binding (TB) model based on the first-principles GW calculations is developed for single layer tin diselenide (SnSe$_2$) and used to study its electronic and optical properties under external magnetic field. The truncated model is derived from six maximally localized wannier orbitals on Se site, which accurately describes the quasi-particle electronic states of single layer SnSe$_2$ in a wide energy range. The quasi-particle electronic states are dominated by the hoppings between nearest wannier orbitals ($t_1$-$t_6$). Our numerical calculation shows that, due to the electron-hole asymmetry, two sets of Landau Level spectrum are obtained when a perpendicular magnetic field is applied. The Landau Level spectrum follows linear dependence on the level index and magnetic field, exhibiting properties of two-dimensional electron gas in traditional semiconductors. The optical conductivity calculation shows that the optical gap is very close to the GW value, and can be tuned by external magnetic field. Our proposed TB model can be used for further exploring the electronic, optical, and transport properties of SnSe$_2$, especially in the presence of external magnetic fields.

Dielectric embedding GW for weakly coupled molecule-metal interfaces.

Molecule-metal interfaces have a broad range of applications in nanoscale materials science. Accurate characterization of their electronic structures from first-principles is key in understanding material and device properties. The GW approach within many-body perturbation theory is the state-of-the-art and can in principle yield accurate quasiparticle energy levels and interfacial level alignments that are in quantitative agreement with experiments. However, the interfaces are large heterogeneous systems that are currently challenging for first-principles GW calculations. In this work, we develop a GW-based dielectric embedding approach for molecule-metal interfaces, significantly reducing the computational cost of direct GW without sacrificing the accuracy. To be specific, we perform explicit GW calculations only in the simulation cell of the molecular adsorbate, in which the dielectric effect of the metallic substrate is embedded. This is made possible via a real-space truncation of the substrate polarizability and the use of the interface plasma frequency in the adsorbate GW calculation. Here, we focus on the level alignment at weakly coupled molecule-metal interfaces, i.e., the energy difference between a molecular frontier orbital resonance and the substrate Fermi level. We demonstrate our method and assess a few GW-based approximations using two well-studied systems, benzene adsorbed on the Al (111) and on the graphite (0001) surfaces.

2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1

Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (104 -105 cm2 V-1 s-1 ). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden-Popper-type layered chalcogenide perovskite semiconductor Ca3 Sn2 S7 is found based on first-principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene-like linear electronic dispersion, small carrier effective mass (0.04 m0 ), ultrahigh room-temperature carrier mobility (6.7 × 104 cm2 V-1 s-1 ), Fermi velocity (3 × 105 m s-1 ), and optical absorption coefficient (105 cm-1 ). Particularly, it has a direct quasi-particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high-speed electronic devices.

Physical origin of giant excitonic and magneto-optical responses in two-dimensional ferromagnetic insulators

The recent discovery of magnetism in atomically thin layers of van der Waals crystals has created great opportunities for exploring light–matter interactions and magneto-optical phenomena in the two-dimensional limit. Optical and magneto-optical experiments have provided insights into these topics, revealing strong magnetic circular dichroism and giant Kerr signals in atomically thin ferromagnetic insulators. However, the nature of the giant magneto-optical responses and their microscopic mechanism remain unclear. Here, by performing first-principles GW and Bethe-Salpeter equation calculations, we show that excitonic effects dominate the optical and magneto-optical responses in the prototypical two-dimensional ferromagnetic insulator, CrI3. We simulate the Kerr and Faraday effects in realistic experimental setups, and based on which we predict the sensitive frequency- and substrate-dependence of magneto-optical responses. These findings provide physical understanding of the phenomena as well as potential design principles for engineering magneto-optical and optoelectronic devices using two-dimensional magnets.

High-Performance Solid-State Thermionic Energy Conversion Based on 2D van der Waals Heterostructures: A First-Principles Study

Two-dimensional (2D) van der Waals heterostructures (vdWHs) have shown multiple functionalities with great potential in electronics and photovoltaics. Here, we show their potential for solid-state thermionic energy conversion and demonstrate a designing strategy towards high-performance devices. We propose two promising thermionic devices, namely, the p-type Pt-G-WSe2-G-Pt and n-type Sc-WSe2-MoSe2-WSe2-Sc. We characterize the thermionic energy conversion performance of the latter using first-principles GW calculations combined with real space Green’s function (GF) formalism. The optimal barrier height and high thermal resistance lead to an excellent performance. The proposed device is found to have a room temperature equivalent figure of merit of 1.2 which increases to 3 above 600 K. A high performance with cooling efficiency over 30% of the Carnot efficiency above 450 K is achieved. Our designing and characterization method can be used to pursue other potential thermionic devices based on vdWHs.

Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. The highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.

First-Principles Calculation of Charge Transfer at the Silicon–Organic Interface

Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge transfer at hybrid silicon-molecule interfaces theoretically. The idea is to filter out the best molecular acceptors to dope silicon with hole densities as high as 1013 cm-2. Here, we use a combinatorial algorithm merging chemical hardness method and first-principles DFT and GW calculations. We start by using the chemical hardness method which is simple and fast to narrow down our search for molecular dopants. Then, for the most optimistic candidates, we perform first-principles DFT calculations and discuss the necessity of GW corrections. This screening approach is quite general and applicable to other hybrid interfaces.

Scaling Universality between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors.

Using first-principles GW Bethe-Salpeter equation calculations and the k·p theory, we unambiguously show that for two-dimensional (2D) semiconductors, there exists a robust linear scaling law between the quasiparticle band gap (E_{g}) and the exciton binding energy (E_{b}), namely, E_{b}≈E_{g}/4, regardless of their lattice configuration, bonding characteristic, as well as the topological property. Such a parameter-free universality is never observed in their three-dimensional counterparts. By deriving a simple expression for the 2D polarizability merely with respect to E_{g}, and adopting the screened hydrogen model for E_{b}, the linear scaling law can be deduced analytically. This work provides an opportunity to better understand the fantastic consequence of the 2D nature for materials, and thus offers valuable guidance for their property modulation and performance control.