First-principles Calculation Method Research Articles

First-Principles Calculations of TiB4 and TiB5 as Anodes with High Capacity for Na-Ion Batteries.

The electrochemical properties of TiB4 and TiB5 monolayers in Na-ion batteries (NIBs) were studied by using the first-principles calculation method based on density functional theory. The TiB4/TiB5 monolayer showed excellent Na storage capacity, capable of adsorbing two layers of Na with theoretical capacities of 1176.77 and 1052.05 mA g-1, respectively. The average operating voltages of the TiB4 and TiB5 monolayers are 0.073 and 0.042 eV, respectively, indicating that they can be used as anode materials for NIBs. More interestingly, the exposed B surface not only brings a high theoretical capacity but also provides a relatively small diffusion barrier of 0.16 (for TiB4) and 0.33 eV (for TiB5), enhancing their rate capability in NIBs.

Atomic-scale tribological behavior of pressure-induced MoO3(0 1 0)/Ag(1 1 1) heterogeneous sliding interface

The atomic-scale tribological properties of the MoO3(010)/Ag(111) heterogeneous sliding interface were studied by first-principles calculation method. The interface binding energy, sliding potential energy, friction force, charge density difference, partial density of states, Mulliken bond population and HiRshfeld charge were analyzed, and the essence of the friction was revealed. The results show that the sliding potential energy and friction exhibit anisotropy for the pressure-induced MoO3(010)/Ag(111) heterogeneous sliding interface. The friction force can be described by the change of the sliding potential energy, and the charge redistribution between interface atoms is the intrinsic reason for the change of tribological properties. This work provides atomic and electronic level insights for understanding the tribological characteristics between two-dimensional materials and soft metals.

First-principles calculations of the electronic structure and thermodynamic properties of B–Co–O materials

In the present study, the structural properties, electronic, elastic, and thermodynamic properties of Co4B6O13、Co2B2O5、Co3(BO3)2、Co(BO2)2, and CoB4O7 materials were calculated by adopting first-principles calculation method based on density functional theory. The simulated lattice constant is compliant with the existing experimental data well. The formation energy, Gibbs free energy, and phonon dispersion curves show that the B–Co–O materials are thermodynamically stable. The results show that the mechanical properties of CoB4O7 material is excellent, while the mechanical properties of Co2B2O5 material is the weakest. The CoB4O7 material has higher Debye temperature and constant volume heat capacity, and the thermodynamic stability of Co3(BO3)2 is the best. By analyzing band structure and electronic density of states, Co2B2O5 and Co3(BO3)2 materials are conductors, Co4B6O13, Co(BO2)2 and CoB4O7 materials belong to P-type semiconductors. Through electronic density of states analysis and Hirshfeld analysis, they indicated that five B–Co–O materials exhibit ferromagnetic.

Thermal Transport Properties of Two-Dimensional Janus MoXSiN2 (X = S, Se, and Te).

The design of Janus materials offers an effective means of regulating both their physical and chemical properties, leading to their application in various fields. However, the underlying mechanism governing the modulation of the thermal transport characteristics through the construction of Janus materials remains unclear. In this work, we introduce VI-group elements into the MoSi2N4 structure, yielding two-dimensional Janus MoXSiN2 (X = S, Se, and Te) and systematically investigate their thermal transport properties based on first-principles calculation methods. Our findings reveal that the lattice thermal conductivities (κl) of MoSSiN2, MoSeSiN2, and MoTeSiN2 are 47.2, 24.3, and 40.6 W/mK at 300 K, respectively, significantly lower than that of MoSi2N4 (224 W/mK). Such low κl values mainly come from the introduction of X atoms, which enhances phonon scattering and reduces phonon vibration frequencies. In addition, MoTeSiN2 exhibits a higher κl compared to MoSeSiN2, contrary to the trend observed in most materials containing VI-group elements, where κl decreases gradually from S to Te. This anomalous behavior can be attributed to the competitive result between its lower phonon vibrational frequency and weaker phonon anharmonicity of MoTeSiN2. This work elucidates the inherent mechanism governing the modulation of thermal transport properties in Janus materials, thereby enhancing the potential application of Janus MoXSiN2 in engineering thermal management.

Effect of solutes segregation in a binary TiAl alloy: A first-principles calculation method

Comprehending the interfacial structures and energetics of interfaces between γ-TiAl and α2-Ti3Al phase is critical to understanding the stabilities of the binary-phase TiAl-Ti3Al alloy. Here a comprehensive first-principles investigation is reported on the structures and energetic properties of γ-TiAl(111)/α2-Ti3Al(0001) interfaces with 19 segregated transition metals considered. The results indicate that all considered atoms have a tendency to segregate at the interface. The interfacial strength enhancement occurs after V, Cr, Mn, Fe, Nb, Mo, Tc, Ru segregated in TiAl, Ag segregated in Ti3Al, and almost all solute atoms can improve interface stability. Compared with the pure interface, the bonding between the segregated atoms and the surrounding atoms is stronger at the interface after V or Nb segregation, while the bonding between Cd and the surrounding atoms is weaker. Our calculations provide the necessary interfacial structures and energetics for predicting the stabilities of binary TiAl alloy.

Effect of non-metal doping on the optoelectronic properties of ZrS2/ZrSe2 heterostructure under strain: a first-principles study.

In this paper, we systematically studied the effects of non-metallic element (B, C, N, O, F) doping and biaxial stretching on the photoelectric properties of ZrS2/ZrSe2 heterostructures by using the first-principles calculation method based on density functional theory. The results show that the p-type doping is realized by B, C, and N atom doping, and the n-type doping is realized by O and F atom doping. The doping of B and C atoms produces impurity energy levels in the band gap, which affects the conductivity of the heterostructure. The band gap of N and O atom-doped heterostructures increases under tensile strain, but it is still a direct band gap. The analysis of the optical properties of the heterostructures shows that the doping of non-metallic atoms can adjust the optical absorption rate and reflectivity of the heterostructures. Under the action of tensile strain, the optical properties of the doped heterostructures have changed significantly in the low-energy region. This article provides a theoretical basis for the future application of ZrS2/ZrSe2 heterostructures. This paper uses the first-principles calculation method based on density functional theory. The PBE exchange-correlation functional based on generalized gradient approximation (GGA) is selected for the specific calculation, and the crystal structure is geometrically optimized by the ultrasoft pseudopotential method. It is verified that when the cutoff energy of the ZrS2/ZrSe2 heterostructure is 500 eV, the K-point grid is selected to be 10 × 10 × 2 with the lowest energy, so the cutoff energy is selected to be 500 eV. The K-point grid is selected to be 10 × 10 × 2. The convergence limits for structural optimization are as follows: the maximum force between atoms is 0.01 eV/Å, the convergence threshold of the maximum energy change is set to 10-9 eV/atom, and the convergence threshold of the maximum displacement is 0.001 Å. In order to avoid the influence of atomic periodic motion between different atomic layers, a vacuum layer of 20 Å is added in the vertical direction. Considering the interaction of vdW between the interfaces, the DFT-D2 method is used to verify. The optical properties were calculated by the random phase approximation method, and the K-point grid was selected as 12 × 12 × 2.

First principles investigation of in-situ NiAl(110)/Ag(111) and NiAl(110)/MoO3(010) heterogeneous interfaces behavior in composite coatings

The interface properties of in-situ NiAl(110)/Ag(111) and NiAl(110)/MoO3(010) heterogeneous interfaces were systematically studied by first-principles calculation method. The interfacial adhesion work, interfacial energy, Mulliken bond population and partial density of states were analyzed, and the bonding mechanism were revealed from the atomic and electronic perspective. The results show that the NiAl(110)/Ag(111) heterogeneous interfaces with OB-NiAl stacking site and the NiAl(110)/MoO3(010) heterogeneous interfaces with OT-Al stacking site are the most stable interface structures with maximum interfacial adhesion work (1.602 J/m2 and 2.833 J/m2, respectively) and minimum interfacial energy (0.7391 J/m2 and −0.8154∼0.7796 J/m2, respectively). Furthermore, charge density differences, partial density of states and Mulliken bond population analysis indicates that the interface bonding mechanism of NiAl (110)/Ag(111) heterogeneous interface is dominated by Al-Ag covalent bonds, and the bonding mechanism of NiAl(110)/MoO3(010) heterogeneous interface is mainly the combination of Al-O ionic bonds and Al-Mo covalent bonds.

Tunable electronic structure and optical properties of GaN monolayer via substituted doping and strain

In this study, the stability, optical properties and electronic structure of transition metal (TM) (Cr, Mn, Fe) doped GaN monolayers is investigated within the first-principles calculation methods. Additionally, the influence of biaxial strain on the aforementioned system is explored. The results demonstrate that substitutional doping effectively adjusts the electronic structure of GaN monolayer, enhancing its performance. The TM-doped GaN monolayer structures exhibit strong dynamic stability: doping with Cr and Fe bring magnetic properties, while Mn doping results in a half-metallicity property. In terms of optical absorption, the GaN:Mn system exhibits significant absorption in the infrared region, while GaN:Cr and GaN:Fe systems show stronger absorption in the visible light and ultraviolet regions compared to the pristine GaN monolayer. Under the biaxial strain from −3% to +12%, with increments of 3%, the band gap types of GaN:Cr, GaN:Fe, and GaN:Mn systems undergo minimal changes, with gradual reduction in gap values. Meanwhile, the optical absorption of doped systems exhibits systematic growth and redshift, particularly evident in the infrared-visible-ultraviolet spectral regions for the GaN:Mn system. These results indicate the controllability and variability of two-dimensional GaN materials, providing new avenues for the potential use of GaN as a material for optoelectronic devices.

First-principles study on Ga interactions with Pu surfaces and [formula omitted]-Pu bulk

The Ga-Pu alloy presents a potential solution to address the constraints of Pu metal as a fuel. Therefore, it is imperative to investigate its pertinent properties. In research, surface models were commonly employed for the preliminary exploration of information, including the identification of more stable binding sites. First-principles calculation methods were employed to investigate the adsorption characteristics of Ga atoms at various sites on the surfaces of Pu(100), Pu(110), and Pu(111), as well as their binding behavior within the Plutonium unit cells. The analysis, by adsorption energies, Charge Density Difference, Bader Charge, Electron Localization Function (ELF), Reduced Density Gradient (RDG), and Projected Density of States (PDOS), revealed that when Ga atoms interacted with the surface, they tended to bind more strongly to the Pu(100) long-bridge and Pu(110) TOP 1 sites, with adsorption energies of -2.585eV and -3.150eV, respectively. On the Pu(111) surface, the adsorption energies at the three sites were adsorption comparable, and the binding trends were similar. Upon entering the δ-Pu unit cells, Ga atoms formed a more stable structure after combining at the G, H, and I sites. The stability both on the surfaces and within the δ-Pu unit cells was primarily attributed to metallic bonds, with an additional contribution from mutual attraction due to van der Waals forces in surface adsorption. The adsorption behavior of Ga on the Pu surface and its binding within the δ-Pu unit cell was systematically investigated. This exploration aimed to offer ideas and insights for a comprehensive understanding of Ga-Pu alloys in subsequent studies.

Strain-induced modification in thermal properties of monolayer 1T-ZrS2 and ZrS2/ZrSe2 heterojunction.

This paper systematically analyzes the phonon dispersion curves of single-layer ZrS2, ZrSe2, and ZrS2/ZrSe2 heterostructures under different strains. The phonon spectra and thermal parameters of the three structures were obtained based on the density functional perturbation theory method. The upper limits of strain that different monolayers and heterojunctions can withstand were studied. The monolayers ZrSe2 and ZrS2 can withstand up to 8% biaxial tensile strain, and the ZrS2/ZrSe2 heterojunction can withstand up to 6% biaxial tensile strain. In addition, the van der Waals force of the heterojunction may cause phonon tearing in the vertical direction. The application of biaxial tensile strain can adjust the thermal properties of the system to a large extent, which is similar to the strain effect in the pristine case. When the temperature rises, the entropy enthalpy of the three structures also gradually increases, the free energy gradually decreases, and the heat capacity of the system gradually increases until it tends to be stable. Taking single-layer ZrS2 as an example, we analyzed the change curve of thermal properties of single-layer ZrS2 under tensile strain. The results show that with the gradual increase of strain, the crystal's entropy, enthalpy, and free energy change differently. In addition, the heat capacity increases slowly under high temperatures. When all systems reach the limit strain, the phonon spectrum appears to have an imaginary frequency, and the thermal properties decrease significantly. This paper uses the first-principle calculation method based on density functional theory, and the PBE exchange-correlation function based on generalized gradient approximation (GGA) is selected for a specific calculation. The density functional perturbation theory (DFPT) calculates the full kinetic matrix. Because the lattice constants of ZrS2 and ZrSe2 are similar and have similar periodicity, the corresponding unit cells are used for structural optimization and property calculation. The Brillouin zone is integrated using the K points generated by the Monkhorst-pack method. For single-layers ZrS2 and ZrSe2, 8 × 8 × 1K-point grid is selected, and for ZrS2/ZrSe2 heterojunction, 8 × 8 × 2K-point grid is selected. A vacuum layer of 30Å was added in the vertical direction to avoid interlayer interaction. The non-conservative pseudopotential method is used to optimize the structure, and the optimization convergence is set as follows: the cutoff energy is set to 700eV, the convergence threshold of the maximum force between atoms is 0.01eV/Å, the convergence threshold of the maximum energy change is set to 1 × 10-9eV, and the convergence threshold of the maximum displacement is 0.001Å.

Enhancement of interfacial thermal conductance by introducing carbon vacancy at the Cu/diamond interface

Effective heat dissipation of semiconductor devices is crucial for their extended lifespan and operational stability, and the interface of semiconductors provides an effective window for thermal design and management. In this work, we have systematically investigated the effect of the carbon vacancy on the thermal conductivity of diamond and the interface thermal conductance (ITC) of Cu/diamond by using both first-principles calculation and molecular dynamics methods. Although the carbon vacancy leads to a decrease in the thermal conductivity of diamond, a marked increase in ITC from 37.98 MWm−2K−1 to about 177 MWm−2K−1 for diamond (1 1 1) plane and from 78.8 MWm−2K−1 to about 241 MWm−2K−1 for diamond (0 0 1) plane is observed between Cu and diamond with carbon vacancy. The increase of the ITC is mainly due to the anharmonic phonon scattering, revealed by the phonon density of states and phonon participation ratio.

Coexistence of Ferromagnetism and Ferroelectricity in Cu-Intercalated Bilayer CrI3.

Design of two-dimensional (2D) multiferroic materials with two or more ferroic orders in one structure is highly desired in view of the development of next-generation electronic devices. Unfortunately, experimental or theoretical discovery of 2D intrinsic multiferroic materials is rare. Using first-principles calculation methods, we report the realization of multiferroics that couple ferromagnetism and ferroelectricity by intercalating Cu atoms in bilayer CrI3, Cux@bi-CrI3 (x = 0.03, 0.06, and 0.25). Our results show that the intercalation of Cu atoms leads to the inversion symmetry breaking of bilayer CrI3 and produces intercalation density-dependent out-of-plane electric polarization, around 18.84-90.31 pC·cm-2. Moreover, the switch barriers of Cux@bi-CrI3 in both polarization states are small, ranging from 0.31 to 0.69 eV. Furthermore, the magnetoelectric coupling properties of Cux@bi-CrI3 can be modulated via varying the metal ion intercalation density, and half-metal to semiconductor transition can be occurred by decreasing the intercalation density of metal ions. Our work paves a practical path for 2D magnetoelectron coupling devices.

Theoretical investigation of the effect of mole fraction on the electronic and optical properties of a binary armchair antimonene−phosphorene nanoribbon

In this work, the electronic and optical properties of a binary armchair antimonene-phosphorene nanoribbon have been studied with a variation of the P mole fraction by first-principles calculation method based on density functional theory. The calculated cohesive energy shows that the stability of the binary SbP nanoribbon increases by increasing the molar fraction of phosphorus to 100%. We have demonstrated that the band gap of SbP nanoribbons can be modified by applying different mole fractions. The band gap value of SbP nanoribbon increases firstly up to mole fractions of approximately 50% and decreases up to 80% and then increases. A direct-to-indirect and an indirect-to-direct gap transitions occur at 5 to 75% (except for 35%) and 80 to 100% mole fractions, respectively. The optical properties of the mentioned structures with different mole fractions are analyzed, and it is found that the optical properties of binary SbP nanoribbons changed by P mole fraction; and also, the light absorption peak is mainly concentrated in the ultraviolet region. Compared with the pure antimonene, the light absorption is significantly enhanced after increasing the mole fraction of phosphorus to 100%. From a theoretical point of view, our results can offer promising applications in electronic and optical nanodevices.

Origin of the Nonmonotonic Pressure Dependence of the Band Gap in the Orthorhombic Perovskite CsPbBr3.

The perovskite CsPbBr3 exhibits an unusual nonmonotonic dependence of the band gap on increasing pressure to about 2.0 GPa as compared to conventional semiconductors. Using the first-principles calculation method, we show that under pressure, isotropic volume deformation induces considerable compression of the Pb-Br bond length and thus an enhanced interaction between atomic orbitals of the antibonding valence band maximum states and the mostly nonbonding conduction band minimum states, resulting in a monotonic decrease in the band gap. On the other hand, structural relaxation tends to reduce the strain energy by decompressing the Pb-Br bond length and simultaneously compressing the Pb-Br-Pb bond angle, which increases the band gap energy. We find that the competition between the volume deformation effect and structural relaxation effect is the origin of the nonmonotonic behavior of the dependence of the band gap on pressure.

First-principles calculations on mechanical and electronical properties of AlB[formula omitted]-type CaB[formula omitted]

In the present study, we focused on studying the properties of CaB2 in the hexagonal AlB2-phase. To determine the characteristics of the material, it is crucial to use first-principles calculation methods. Therefore, we used the Density Functional Perturbation Theory to calculate the elastic constants, phonon frequencies, and electron–phonon coupling properties of CaB2, which are important for understanding its superconducting and mechanical behaviors. Additionally, we analyzed Fermi surfaces and electronic band structures and compared them to those of MgB2. Our calculations showed that there is a close relationship between electron–phonon coupling and the superconducting properties of the material. We discovered that the critical superconducting transition temperature value is 24.71 K. In a remarkable finding, the presence of a Dirac cone at the Fermi level was observed in the electronic band structure, which may indicate that the material may be a topological semi-metal.

Investigation of the physical properties of the metal (Co, Cr, Mn, Sc) doped TiAl3 compounds: A DFT study

In this paper, the elastic and electronic properties of Metal (M = Co, Cr, Mn, Ni, Sc) - TiAl3 are compared based on the first-principles calculation method based on density functional theory, and the Metal-TiAl3 Mechanical, thermodynamic and electronic properties of TiAl3 intermetallic compounds. The results of mechanical property calculations show that the structures of Sc-TiAl3 and V-TiAl3 are the most stable. The ability of Sc-TiAl3 to resist volume deformation and shear deformation is larger. The Poisson's ratio ν is less than 0.33, and it can be determined that the calculated compounds are brittle materials (except Ni-TiAl3). Cr-TiAl3 has the largest intrinsic Vickers hardness, while Ni-TiAl3 has the smallest intrinsic Vickers hardness. This study has a significant impact on adjusting the mechanical properties of TiAl3.

Calculation of positron annihilation lifetime in diamond doped with B, Cr, Mo, Ti, W, Zr

Metal-matrix diamond composites have been extensively used and studied, but vacancies, doping, and other defects caused by the pretreatment of the diamond surface significantly affect the interface property between the metal base and diamond. Although techniques like transmission electron microscopy and spectroscopy analysis have been used to detect defects, they present certain limitations. Calculating the positron annihilation lifetime in diamond provides an accurate assessment of interface defect in the diamond. This study uses first-principles calculation methods and adopts various positron annihilation algorithms and enhancement factors, to compute the positron annihilation lifetimes in ideal diamond crystals, single vacancies, and diamond crystals doped with B, Cr, Mo, Ti, W, and Zr. The results, obtained by using local density functional in combination with Boronski & Nieminen algorithms and random-phase approximation restriction as annihilation enhancement factors, indicate that the computed positron annihilation lifetime of diamond is 119.87 ps, which is consistent closely with the experimental result in the literature. Furthermore, after B, Cr, Mo, Ti, W, and Zr atoms are doped into diamond (doping atomic concentration of 1.6%), the positron annihilation lifetimes change from a single vacancy 119.87 ps to 148.57, 156.82, 119.05, 116.5, 117.62, and 115.74 ps respectively. This implies that the defects due to doped atoms in diamond change their positron annihilation lifetimes, with the influence varying according to the different atoms doped. Based on the calculated electron density in diamond vacancies and doped atom areas, it is discovered that doping atoms do not cause severe distortion in the diamond lattice. However, after B and Cr atoms are doped, the positron annihilation lifetime increases significantly. The primary reason is that the relatively low positron affinity of B and Cr atoms results in an extended positron residence time in the vacancy, thereby increasing the annihilation lifetime. Overall, vacancies and doped atom defects in diamond will cause its positron annihilation lifetime to change. The above conclusions provide crucial theoretical references for detecting and identifying interface defects caused by doping treatment on the diamond surface during the preparation of metal-matrix diamond composites.

Silicon carbide single crystals for high-temperature supercapacitors.

Designing advanced electrode materials that can be reliably cycled at high temperatures and used for assembling advanced energy storage devices remain a major challenge. As a representative of novel wide bandgap semiconductors, silicon carbide (SiC) single crystals have broad prospects in high-temperature energy storage due to their excellent characteristics such as low thermal expansion coefficient, high temperature radiation resistance and stable chemical properties. In this work, an N-type SiC single-crystal material with a high-density porous structure was successfully designed and prepared by using an improved electrochemical anodic oxidation strategy. Besides, the N-type SiC single crystals were used in electrochemical energy storage as an integrated electrode material, exhibiting superior electrochemical performance. In addition, the high-temperature supercapacitor device assembled with ionic liquids has a wide operating temperature range and maintains a capacity of 88.24% after 5000 cycles at 150 °C. The reasons for its high energy storage performance are discussed through electrochemical tests and first-principles calculation methods. This study proves that the application of SiC single crystals in supercapacitor devices has great potential in the field of high-temperature energy storage, providing a reference for the further development of novel semiconductors in the field of energy storage and optoelectronic devices.

Two-dimensional ferromagnetism induced by Jahn-Teller distortion and orbital order

As the dimension of the system decreases, the quantum confinement effect and electronic correlation interaction inside the material will be correspondingly enhanced, often resulting in some novel physical properties. Recently, the freestanding perovskite oxide films down to the monolayer limit have been successfully prepared and can be transferred to any desired substrate, providing a great opportunity to explore the functional properties of two-dimensional perovskites. In perovskite materials, Jahn-Teller distortion and orbital order often cause a variety of correlated electronic behaviors. However, unlike van der Waals materials that retain their structural and chemical bonding characteristics when reduced to the monolayer limit, perovskite materials may undergo structural reconstruction when reduced to two dimensions. Therefore, whether Jahn-Teller distortion and related effects exist in the perovskite monolayer limit, and whether two-dimensional perovskite can exhibit some new properties different from its bulk phase, have become urgent issues to be solved. In this work, perovskite fluoride KCuF<sub>3</sub> and its monolayer have been comparatively studied by means of first-principles calculation, symmetry analysis, and Monte Carlo simulation methods, to reveal the change in lattice dynamics, structural, electronic, and magnetic properties caused by dimensionality reduction in perovskites. The results show that the cooperative Jahn-Teller distortion and the in-plane staggered orbital order occurring in the KCuF<sub>3</sub> bulk can be retained to the monolayer limit. However, unlike the bulk phase, the Jahn-Teller distortion mode appears as a soft mode of the prototype phase in the monolayer, and the insulating property of the monolayer does not rely on the emergence of the Jahn-Teller distortion, but is related to the enhancement of the electronic correlation effect. The staggered orbital order causes the nearest-neighbor exchange interaction to be ferromagnetic, resulting in the monolayer being a two-dimensional ferromagnetic insulator, different from the antiferromagnetic phase in the bulk. Monte Carlo simulations predict that the Curie temperature of the monolayer is about 5 K, which is much lower than the Néel temperature of the bulk phase, indicating that the disappearance of interlayer coupling leads to a significant reduction in the magnetic phase transition temperature. This work provides guidance and reference for the study of two-dimensional perovskite materials and the design of perovskite-based two-dimensional ferromagnets.

First-principles study of Cs/O deposited Na<sub>2</sub>KSb photocathode surface

Na<sub>2</sub>KSb photocathodes have many applications in vacuum optoelectronic devices, such as photomultiplier tubes, image intensifiers, and streak image tubes for high-speed detection and imaging in extremely weak light environments, due to their advantages of high temperature resistance, small dark current, low vacuum requirement, low fabrication cost and high fabrication flexibility. In addition, this type of photocathode has important application prospect in high brightness accelerator photoinjectors. To guide the fabrication of high-sensitivity Na<sub>2</sub>KSb photocathodes, Na<sub>2</sub>KSb surfaces with different surface orientations and atom terminations are investigated by the first-principles calculation method based on the density functional theory to obtain the most stable and most favorable surface for electron emission. From the perspectives of surface energy, adsorption energy, and work function before and after Cs adsorption, it is revealed that the Na<sub>2</sub>KSb (111) K surface exhibits superior surface stability and electron emission capability. Furthermore, the electronic structure and optical properties of Cs adsorption and Cs/O co-adsorption on the Na<sub>2</sub>KSb (111) K surface under different Cs coverages are analyzed, and the mechanism of Cs/O deposition on Na<sub>2</sub>KSb surface is studied. The adsorption energy of Cs in the Cs/O adsorption model is much larger than that in the single Cs adsorption model, indicating that the adsorption of O atoms on the Na<sub>2</sub>KSb surface can make the adsorption of Cs atoms on the surface stronger, and thus increasing the adhesion of Cs atoms on the surface. After adsorption of Cs on the Na<sub>2</sub>KSb (111)K surface, the surface work function only decreases by 0.02 eV, while the maximum work function decrease for the Cs/O adsorbed surface is 0.16 eV, with the Cs coverage of 2/4 ML and the O coverage of 1/4 ML. The adsorption of Cs/O atoms on the surface facilitates the charge transfer above the surface and results in charge accumulation, which can form the effective surface dipole moment. The magnitude of the surface dipole moment is directly related to the change of work function. Furthermore, through the analysis of the electronic band structure and density of states, it is found that the adsorbed Cs atoms have additional contribution to the band structure near the conduction band minimum. After the introduction of O atoms, the valence band moves up, also the bottom of the conduction band and the top of the valence band become flat. The Cs/O deposition is beneficial to increasing the absorption of near-infrared light on the Na<sub>2</sub>KSb surface, but it will reduce the absorption of ultraviolet light and visible light, and the refractive index will also decrease. This work has a certain reference significance for understanding the optimal emission surface of Na<sub>2</sub>KSb photocathode and the mechanism of surface Cs/O deposition.