Tunable electronic structure and optical properties of GaN monolayer via substituted doping and strain

Abstract

In this study, the stability, optical properties and electronic structure of transition metal (TM) (Cr, Mn, Fe) doped GaN monolayers is investigated within the first-principles calculation methods. Additionally, the influence of biaxial strain on the aforementioned system is explored. The results demonstrate that substitutional doping effectively adjusts the electronic structure of GaN monolayer, enhancing its performance. The TM-doped GaN monolayer structures exhibit strong dynamic stability: doping with Cr and Fe bring magnetic properties, while Mn doping results in a half-metallicity property. In terms of optical absorption, the GaN:Mn system exhibits significant absorption in the infrared region, while GaN:Cr and GaN:Fe systems show stronger absorption in the visible light and ultraviolet regions compared to the pristine GaN monolayer. Under the biaxial strain from −3% to +12%, with increments of 3%, the band gap types of GaN:Cr, GaN:Fe, and GaN:Mn systems undergo minimal changes, with gradual reduction in gap values. Meanwhile, the optical absorption of doped systems exhibits systematic growth and redshift, particularly evident in the infrared-visible-ultraviolet spectral regions for the GaN:Mn system. These results indicate the controllability and variability of two-dimensional GaN materials, providing new avenues for the potential use of GaN as a material for optoelectronic devices.