Crystal engineering is critical for improving the crystal quality and tuning the optoelectronic properties of metal-organic frameworks (MOFs) materials. Doping MOFs is one of the practical approaches to improve the optoelectronic properties of MOFs. Here, a simple and effective method is used to grow MOF nanoparticles as films on the surface of the material. MOF-5 and ZIF-8 nanoparticles can be uniformly grown as films on the Si substrates. The crystalline quality of MOF films is improved after doping with Tb. Meanwhile, two-dimensional conducting photodetectors and photodetector arrays were prepared with perovskite films. Meanwhile, planar conducting photodetector arrays were prepared with MOF films. The photoluminescence (PL) intensity of the Tb-ZIF-8 and Tb-MOF-5 films shows an improvement compared to both ZIF-8 and MOF-5 layers, which leads to improved charge carriers transfer. The maximum photocurrents were about 4 × 10−8 A and 3 × 10−8 A of exposed light at 525 and 425 nm, respectively, at a fixed bias of 10 V for Tb-ZIF-8. The highest photo response of approximately 2.4 × 10−7 and 1.2 × 10−7 A was measured under 525 and 450 nm for the Tb-MOF-5-based device, respectively. The photocurrent behavior is optimized in the visible range due to the increased number of photo-generated carriers at 525 nm. The Tb-MOF-5 based device is a more powerful photodetector than the Tb-ZIF-8 based device under the same conditions. In addition, the stability of Tb-MOF-5 and Tb-ZIF-8 based photodetectors was obtained 77 % and 30 %, respectively. The photodetectors of Tb-MOF-5 have higher stability and better performance than Tb-ZIF-8.
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