Continuous Film Based on Zeolitic Imidazole Framework-8 for an Enhanced Resistive Memory Property

Abstract

Although metal-organic frameworks attract much attention in electronic devices, the discontinuity at and weak interfacial contact with the substrate are still challenging. In this paper, an $\mathrm{Ag}$/(polyethylene glycol + zeolitic imidazole framework-8) @ (polyvinyl alcohol + 2-methylimidazole)/fluorine-doped tin oxide [$\mathrm{Ag}$/(PEG + ZIF8) @ (PVA + 2MIM)/FTO] structured resistive memory is fabricated. The interfacial contact and active site are enhanced by modifying FTO with (PVA + 2MIM). The continuity of ZIF-8 film is enhanced by compositing PEG. The resistive memory exhibits a lower set voltage of 1.3 V, a higher endurance of more than 140 cycles, and a longer retention time of over 10 000 s, in comparison with control devices of $\mathrm{Ag}$/ZIF-8/FTO and $\mathrm{Ag}/$ZIF-8 @ (PVA + 2MIM)/FTO. The mechanism of the resistive switching behavior is analyzed by conduction models, and explained by redox reactions of the top active electrode to form and rupture conductive filaments under the electric field. This study suggests a facial and general technology for synthesizing a continuous film with strong contact with the substrate, benefiting electronic devices.