Film Density Research Articles

Polyvinyl alcohol covalently grafted perylene imide for high-performance light-conversion film

To suppress the aggregation caused quenching of perylene diimide (PDI) derivatives, and improve photostability of PDI derivatives, a polyvinyl alcohol grafted copolymer (PVA-PDIE) was prepared by transesterification of a perylene imide derivative (PDIE) and polyvinyl alcohol (PVA). PDIE was characterized by H-NMR and HR-MS, and PVA-PDIE was confirmed by IR, water resistance, and control experiments. PVA-PDIE film showed high quantum yield (0.75), and matching emission maxima (620 nm). More importantly, PVA-PDIE film had excellent thermal stability and photostability, high transmittance and light conversion quality. Furthermore, the decomposition temperature of PVA-PDIE film was up to 240 °C, while emission intensity maintained at 95 % and 96 % of the initial value in turn after intensified ultraviolet radiation of 40 h and sunlight radiation of 40 days. Compared with the PVA blank film, photosynthetic photon flux density (PFD) of PVA-PDIE film increased by 25 % and 34 % for red orange light and near-infrared light respectively, and decreased by 39 %, 27 %, and 24 % for ultraviolet light, blue violet light, and yellow-green light in sequence, indicating outstanding light conversion performance. Meanwhile, PVA-PDIE film had excellent transparency.

Electrochemical behavior and passivation film characterization of TiZrHfNb multi-principal element alloys in NaCl-containing solution

In this work, the electrochemical behavior and passivation film characteristics of a TiZrHfNb multi-principal element alloy (MPEA) with an equal atomic ratio in Cl− solution were studied. The effect of constituent metals on the overall corrosion resistance of alloys focused on different aspects. Ti could reduce the point defect density of the passivation film, while Nb kept the passivation film stable at a high potential, Hf and Zr provided high resistance and charge transfer resistance to the passivation film, and hydroxides enhanced the repair ability of the passivation film. There was also a synergistic effect between the alloying elements.

Study on the repair behavior of passive film of iron-based amorphous coatings by eco-friendly phosphate inhibitors

The passivation ability of the coating can be improved by adjusting the elements proportion in the Iron-based Amorphous Coating and the spraying process, but the process is complicated and costly. In this study, it was found for the first time that Iron-based Amorphous Coatings can quickly form passive films in phosphate atmosphere, which simplifies the coating strengthening process. Electrochemical measurements, XPS, AFM, FTIR, and SEM-EDS were used to investigate the inhibition mechanism of eco-friendly phosphates on the dynamic dissolution of passive film of Fe-based amorphous coating. When the coating was soaked in 3.5 wt% NaCl + 0.1 M solution, the iron phosphate compound on the coating surface promoted the repair and growth of the passive film, and the film thickness increased by more than 32.9 %. The increase of Fe2+/Fe3+ and (O2-+H2O)/OH- in the passive film means that more insoluble Fe-Cr compound growth significantly reduces the donor density (Nd) in the passive film and inhibits the degradation rate of the passive film in the corrosive environment.

The Effect of Temperature and Film Thickness on Domain Wall Energy Density, Coercivity Force, and Magnetostriction of Galfenol Films

The Effect of Temperature and Film Thickness on Domain Wall Energy Density, Coercivity Force, and Magnetostriction of Galfenol Films

Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations

Antiferroelectric materials represented by PbZrO3(PZO) have excellent energy storage performance and are expected to be candidates for dielectric capacitors. It remains a challenge to further enhance the effective energy storage density and efficiency of PZO-based antiferroelectric films through domain engineering. In this work, the effects of three variables, misfit strain between the thin film and substrate, defect dipoles doping, and film thickness, on the domain structure and energy storage performance of PZO-based antiferroelectric materials are comprehensively investigated via phase-field simulations. The results show that applying tensile strain to the films can effectively increase the transition electric field from antiferroelectric to ferroelectric. In addition, the introduction of defect dipoles while applying tensile strain can significantly reduce the hysteresis and improve energy storage efficiency. Ultimately, a recoverable energy density of 38.3 J/cm3 and an energy storage efficiency of about 89.4% can be realized at 1.5% tensile strain and 2% defect dipole concentration. Our work provides a new idea for the preparation of antiferroelectric thin films with high energy storage density and efficiency by domain engineering modulation.

Exposure Factors for Flexible Digital Detector Arrays

Exposure factors (R factors) provide guidance in gamma radiography applications. The exposure time is calculated for a specific source type, activity, thickness of steel, desired exposure factor for a target film density or pixel value, and source-to-detector distance (SDD). R factors to produce target film densities of 2.0, 2.5, 3.0, and 3.5 were published for M100, MX125, T200, AA400, and HS800 films. Digital R factors are now published for Carestream rigid and flexible digital detector array (DDA) products. The flexible DDA’s are bent repeatedly around curved surfaces for single wall viewing, as radiography codes and standards require that the detector be in direct contact with the weld whenever practical. The R factor tables are published along with the supporting data used to calculate them, which are provided in graphical format for each condition. Iridium, selenium, and cobalt radioisotope sources were utilized for the generation of the data. Radiographers utilize the tables provided to enter the R factor into a commercially available phone-based calculator to determine the exposure time required to obtain the target optical density or grey value through the base metal. R factors are meant to be a starting point only, as other factors related to the part geometry and technique impact the required exposure.

Acceleration of radiative recombination for efficient perovskite LEDs

The increasing demands for more efficient and brighter thin-film light-emitting diodes (LEDs) in flat-panel display and solid-state lighting applications have promoted research into three-dimensional (3D) perovskites. These materials exhibit high charge mobilities and low quantum efficiency droop1–6, making them promising candidates for achieving efficient LEDs with enhanced brightness. To improve the efficiency of LEDs, it is crucial to minimize nonradiative recombination while promoting radiative recombination. Various passivation strategies have been used to reduce defect densities in 3D perovskite films, approaching levels close to those of single crystals3. However, the slow radiative (bimolecular) recombination has limited the photoluminescence quantum efficiencies (PLQEs) of 3D perovskites to less than 80% (refs. 1,3), resulting in external quantum efficiencies (EQEs) of LED devices of less than 25%. Here we present a dual-additive crystallization method that enables the formation of highly efficient 3D perovskites, achieving an exceptional PLQE of 96%. This approach promotes the formation of tetragonal FAPbI3 perovskite, known for its high exciton binding energy, which effectively accelerates the radiative recombination. As a result, we achieve perovskite LEDs with a record peak EQE of 32.0%, with the efficiency remaining greater than 30.0% even at a high current density of 100 mA cm−2. These findings provide valuable insights for advancing the development of high-efficiency and high-brightness perovskite LEDs.

Effect of GaAs Substrate Micropatterning on Threading Dislocation Density in Solution-Deposited Lead Sulfide Thin Films

Effect of GaAs Substrate Micropatterning on Threading Dislocation Density in Solution-Deposited Lead Sulfide Thin Films

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films.

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to formAs8clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using 'defect analysis technology' and 'diamond structure identification' in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number ofAs8clusters decreases and film density increases. Increasing incident velocity increases the irregular movement ofAs8clusters in air, and their deposition on the film surface affects the morphology of the film, and the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number ofAs8clusters in the film decreases or the As8clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

Impact of Oxygen Stoichiometry on the Thermoelectric Properties of Bi2Sr2Co2Oy Thin Films.

In this study, we present a comprehensive analysis of the thermoelectric (TE) properties of highly c-axis-oriented thin films of layered misfit cobaltates Bi2Sr2Co2Oy. The films exhibit a high c-axis orientation, facilitating precise measurements of electronic transport and TE properties along the a-b crystallographic plane. Our findings reveal that the presence of nearly stoichiometric oxygen content results in high thermopower with metallic conductivity, while the annealing of the films in a reduced oxygen atmosphere eliminates their metallic behavior. According to the well-established Heike's limit, the thermopower tends to become temperature independent when the thermal energy significantly exceeds the bandwidth, which provides a rough estimation of charge carrier density by using the Heike's formula. This observation suggests that the dominant contribution to the thermopower comes from the narrow Co-t2g bands near the Fermi energy. Our study demonstrates that the calculated thermopower value using Heike's formula, based on the Hall electron density of the Bi2Sr2Co2Oy thin films at 300 K, aligns well with the experimental results, shedding light on the intriguing TE properties of this family of layered cobaltate oxide films.

Printable silicate and RuO2 composite with wide-range linear PTC for high-temperature sensors

3D printing has revolutionised the design and manufacturing of high-temperature thin/thick-film sensors (TFSs). However, existing printable high-temperature materials face cost-performance trade-offs. This study proposes a silicate and RuO2 composite for the 3D printing of TFSs. A silicate compound (SiO2–Al2O3–CaO, SAC) was used as a sintering aid to reduce the sintering temperature of RuO2, forming a silicate glass phase that enhanced film density and substrate adhesion. The SAC also minimised RuO2 particle volatilisation at high temperatures, thus enhancing the stability of the SAC/RuO2 composite. The SAC/RuO2 TFSs demonstrated exceptional performance, with a positive temperature coefficient (502 ppm/°C) from room temperature to 800 °C, high linearity, and stability (resistance drift rate of 0.1 %/h at 800 °C), extending the application temperature of RuO2 by nearly 200 °C from the previous application temperature of 600 °C. Therefore, the SAC/RuO2 composite offers a new low-cost and high-performance solution for using 3D printing technology in harsh environmental sensors such as turbine blades.

Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere

AbstractChemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO2 films suitable for piezoelectric applications. Control of processing parameters is of utmost importance to obtain high‐quality functional films. However, the impact of the annealing atmosphere on ferroelectric properties of solution‐processed HfO2 films is not clear. In this work, the influence of annealing atmosphere and growth methods on orientation, density and electrical properties of La:HfO2 films is studied. The 45 nm‐thick films are grown by two routes, conventional (crystallization of the final 45 nm‐thick film) and layer‐by‐layer (intermediate crystallizations of 5 nm‐thick films). Annealing is performed in N2:O2 and Ar atmosphere. Films grown by layer‐by‐layer method in an oxygen‐rich atmosphere tend to have higher density (87% of theoretical density) and remanent polarization (15 µC cm–2) than the conventional films (density and remanent polarization of 80% and 7.5 µC cm‐2). Secondary ion mass spectrometry reveals higher amounts of carbon presence in the conventional films annealed in Ar. For layer‐by‐layer films, the ability to control the preferential out‐of‐plane orientation from (111) to (002) simply by changing the annealing atmosphere, is demonstrated. The results can guide the path toward high‐quality thicker films for piezoelectric applications.

Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors.

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin film transistor (MOTFT). Due to the poor negative bias illumination stress (NBIS) stability of indium gallium zinc oxide thin film transistor (IGZO-TFT) devices, terbium-doped Tb:In2O3 material was selected as the target of this study. The XPS test revealed the presence of both Tb3+ and Tb4+ ions in the Tb:In2O3 film. It was hypothesized that the peak of the laser thermal effect was reduced and the action time was prolonged by the f-f jump of Tb3+ ions and the C-T jump of Tb4+ ions during the laser treatment. Studies related to the treatment of Tb:In2O3 films with different laser energy densities have been carried out. It is shown that as the laser energy density increases, the film density increases, the thickness decreases, the carrier concentration increases, and the optical band gap widens. Terbium has a low electronegativity (1.1 eV) and a high Tb-O dissociation energy (707 kJ/mol), which brings about a large lattice distortion. The Tb:In2O3 films did not show significant crystallization even under laser energy density treatment of up to 250 mJ/cm2. Compared with pure In2O3-TFT, the doping of Tb ions effectively reduces the off-state current (1.16 × 10-11 A vs. 1.66 × 10-12 A), improves the switching current ratio (1.63 × 106 vs. 1.34 × 107) and improves the NBIS stability (ΔVON = -10.4 V vs. 6.4 V) and positive bias illumination stress (PBIS) stability (ΔVON = 8 V vs. 1.6 V).

Implementation of a Multi-Functional-Group Strategy for Enhanced Performance of Perovskite Solar Cells through the Incorporation of 3-Amino-4-Phenylbutyric Acid Hydrochloride.

Reducing the defect density of perovskite films during the crystallization process is critical in preparing high-performance perovskite solar cells (PSCs). Here, a multi-functional molecule, 3-phenyl-4-aminobutyric acid hydrochloride (APH), with three functional groups including a benzene ring, ─NH3 + and ─COOH, is added into the perovskite precursor solution to improve perovskite crystallization and device performance. The benzene ring increases the hydrophobicity of perovskites, while ─NH3 + and ─COOH passivate defects related to I- and Pb2+, respectively. Consequently, the power conversion efficiency (PCE) of the optimal device increased to 24.65%. Additionally, an effective area of 1 cm2 with a PCE of 22.45% is also prepared using APH as an additive. Furthermore, PSCs prepared with APH exhibit excellent stability by 87% initial PCE without encapsulation after exposure at room temperature under 25% humidity for 5000 h and retaining 70% of initial PCE after aging at 85°C in an N2 environment for 864 h.

Effects of 3-Bromo-N-methylbenzylamine modification on CsPbI2Br perovskite films and perovskite solar cells

In this work, 3-Bromo-N-methylbenzylamine (3-B-N-MB) was designed to modify CsPbI2Br/hole transport layer interface to reduce the interfacial non-radiative recombination loss of all-inorganic CsPbI2Br perovskite solar cells (PSCs). The effects of 3-B-N-MB modification on the morphology, structure, optical absorption, defect concentration, carrier lifetime, energy level, hydrophobicity of CsPbI2Br perovskite film and device performance, and carrier dynamics, as well as their mechanisms were systematically studied. The results show that the lone pair electrons in the N atom of N-H group in strongly alkaline 3-B-N-MB is more conducive to coordinate with uncoordinated Pb2+/Cs+ in CsPbI2Br, meanwhile the H atom of N-H group in 3-B-N-MB can react with I−/Br− in CsPbI2Br through hydrogen bonding, passivating interface defects to increase grain size and enhance the crystallinity and density of CsPbI2Br films, optimizing interface energy level matching to promote carrier transport, thus suppressing interfacial non-radiative recombination to improve device performance. As a result, the PCE of the 3-B-N-MB modified PSCs significantly enhanced ∼32.5 % as compared to that of the pristine one and the air stability of the device has also improved. The 3-B-N-MB modification provides a new strategy to enhance the efficiency and stability of all-inorganic perovskite solar cells.

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Using plasma-enhanced atomic layer deposition (PEALD), we achieved the low-temperature growth of aluminum nitride (AlN) films on GaAs substrate. The effect of in-situ plasma pre-treatment on AlN films growth has been thoroughly investigated in detail. After in-situ plasma pre-treatment, the surface roughness closely matched that of the substrate, the interfaces between AlN films and GaAs substrate were extremely sharp, and the film density increased from 3.05 g/cm3 to 3.15 g/cm3. Additionally, the oxygen content in the AlN films decreased from 35.5 % to 18.8 %. This indicates that in-situ plasma pre-treatment is an effective method for reducing impurity content and improving film quality.

The use of He buffer gas for moderating the plume kinetic energy during Nd:YAG-PLD growth of EuxY2−xO3 phosphor films

We have investigated the He buffer gas process of moderating the kinetic energy of the pulsed laser deposition (PLD) plume during EuxY2−xO3 phosphor film growth. When using a neodymium yttrium aluminum garnet laser for PLD thin film growth, the kinetic energy of the ablation plumes can be high enough to cause the formation of point defects in the film. The buffer gas pressure is an important process parameter in PLD film growth. We find that the presence of the He buffer gas reduces the kinetic energy of the laser deposition plume through many low-angle collisions in the gas phase by a factor of 7 without reducing the deposition rate. This is because He is much lighter than any of the elements in the plume and it does not affect the composition of the oxide films. Consequently, the resputtering of the Y2O3 film surface by the plume was significantly suppressed in the presence of the He gas moderator, leading to a decrease of the defect density in the Y2O3 films. The improvement of the film quality was verified by a systematic analysis of time-resolved photoluminescence (PL) data for EuxY2−xO3 composition–gradient films. The PL lifetime and intensity of Eu0.2Y1.8O3, which shows the highest PL intensity, increased by 13.3% and 36.4%, respectively, when the He gas moderation process was used. The He buffer gas process is applicable to the PLD growth of the other oxide materials as well, where the reduction of the kinetic energy of the plume would bring the PLD process closer to the molecular beam epitaxy growth condition.

Application of multi-layered composite fiber films with enhanced piezoelectric performance in flexible energy harvesting devices

Flexible electronic components such as wearable sensors, energy harvesting devices, and human health monitoring systems based on piezoelectric materials have garnered significant attention within the scientific community. In this study, PZT nanofibers were modified with dopamine hydrochloride prior to their integration into PVDF fibers, serving as piezoelectric reinforcements to enhance the mechanical and piezoelectric characteristics of composite fiber films. Subsequently, a facile hot-pressing method was employed to fabricate multilayered films characterized by a densely packed surface fiber arrangement and a loosely organized internal fiber orientation, which markedly improved the self-supporting ability and fiber density of the electrospun fiber films. A detailed investigation into the micro-morphology, crystallinity, and enhanced piezoelectric properties of the films was conducted. Notably, the composite fiber film containing 6 wt% PZT NFs exhibited a peak piezoelectric coefficient (d33) of 29 pC/N, resulting in an output voltage of 13.8 V. This represents a 2.23-fold enhancement in d33 value and a 4.6-fold increase in output voltage when compared to the pristine PVDF fiber film, which had a d33 of 13 pC/N and an output voltage of 3 V. The power density achieved by the sensor is 0.73 μW/cm2. This performance is underpinned by a high piezoelectric coefficient, outstanding output characteristics, and robust stability, which collectively enhance the sensor's efficacy in various applications. This research presents an effective approach for augmenting the piezoelectric performance of PVDF-based composite films and paves the way for the advancement of piezoelectric energy harvesting applications.

Tailoring indium oxide film characteristics through oxygen reactants in atomic layer deposition with highly reactive liquid precursor

Indium oxide (InOx) films were deposited via atomic layer deposition (ALD) using a novel liquid indium precursor, dimethyl[N1-(tert-butyl)–N2,N2-dimethylethane-1,2-diamine]indium (DMITN). In this process, the reactant (H2O, O3, or O2 plasma) and substrate temperature (100–250 ℃) were varied. The DMITN precursor showed excellent reactivity with all three reactants. The growth characteristics (ALD window, growth per cycle, and step coverage) and film properties (impurities, stoichiometry, oxygen bonding state, crystallinity, film density, and electrical properties) differed based on the ALD process employed, ascribed to the distinct thermal energies and inherent reactivities of the chosen oxidants. As the oxidation energy of the reactants increased (H2O < O3 < O2 plasma), the growth per cycle (GPC) and the oxygen–indium bond ratio of InOx increased. Crystallinity analysis also revealed significant differences depending on the reactants, where the Hall mobility was predominantly influenced by the crystal alignment. The step coverage at an aspect ratio of 40:1 was markedly superior with the use of H2O and O3 reactants (approximately 95 %) compared to that with O2 plasma (approximately 74 %). These findings highlight the capability of controlling the growth and properties of InOx films by judiciously selecting the reactant, emphasizing the versatility of the DMITN precursor in ALD processes.

Crystallization Control Assists Annealing‐Free Fabrication of Printable Mesoscopic Perovskite Solar Cells with Power Conversion Efficiency over 17%

The one‐step drop‐casting for preparing perovskite films in three‐layer mesoporous for printable mesoscopic perovskite solar cells always results in insufficient filling of mesopores. A binary solvent based on 2‐methoxyethanol (2‐ME) and 1‐methyl‐2‐pyrrolidone (NMP) offers a method suitable for annealing‐free to prepare dense perovskite films in mesopores. The crystallization process of perovskite films in mesopores can be adjusted by the content of NMP in the solvent. The introduction of NMP enhances the density of the perovskite film based on the binary solvent system, optimizing the contact between the perovskite film and the mesoporous scaffold. When the ratio of 2‐ME to NMP is 9:1, the optimal device achieves impressive performance metrics, including a power conversion efficiency (PCE) of 17.28%, an open‐circuit voltage of 0.98 V, a short‐circuit current of 23.80 mA cm−2, and a fill factor of 74.08%. This represents the highest PCE achieved to date in the annealing‐free preparation of perovskite films for printable mesoscopic perovskite solar cells. Furthermore, devices based on this binary solvent system exhibit remarkable stability, with almost no loss in efficiency even after 120 days of storage in an air environment without encapsulation.