Field Hall Effect Research Articles

Crystalline electric field and large anomalous Hall effect in NdGaGe single crystals

We grew NdGaGe single crystals and investigated their magnetic and electrical transport properties. The magnetic susceptibility data revealed that NdGaGe orders magnetically at Tm≈ 8.8 K; also confirmed by heat capacity and electrical resistivity data. In ordered state, the heat capacity and electrical resistivity data exhibit a gapped-magnon behavior with an energy gap of ∼ 4.7 K. Our detailed crystalline electric field analysis of magnetic susceptibility, magnetization, and heat capacity data indicates that the (2J+1) degenerate energy levels of Nd3+ ion split into five doublets with an overall splitting of ∼ 123 K. We observe a large anomalous Hall conductivity (AHC) ∼ 530 Ω−1 cm−1 at 2 K, which is close to the theoretical expected value due to intrinsic Berry-curvature. Moreover, the scaling parameter between anomalous Hall resistivity and magnetoresistivity together with the linear relationship between AHC and saturation magnetization suggests that the origin of large AHC in NdGaGe is due to the intrinsic Berry curvature.

Influence of ferromagnetic interlayer exchange coupling on current-induced magnetization switching and Dzyaloshinskii-Moriya interaction in Co/Pt/Co multilayer system.

This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable control over the coupling strength. Employing Brillouin Light Scattering to quantify the effective DMI, we explore its potential role in magnetization dynamics and multilevel magnetization switching. Experimental findings show four distinct resistance states under an external magnetic field and spin Hall effect related spin current. We explain this phenomenon based on the asymmetry between Pt/Co and Co/Pt interfaces and the interlayer coupling, which, in turn, influences the DMI and subsequently impacts the magnetization dynamics. Numerical simulations, including macrospin, 1D domain wall, and simple spin wave models, further support the experimental observations of multilevel switching and help uncover the underlying mechanisms. Our proposed explanation, supported by magnetic domain observation using polar-magnetooptical Kerr microscopy, offers insights into both the spatial distribution of magnetization and its dynamics for different IECs, thereby shedding light on its interplay with DMI, which may lead to potential applications in storage devices.

Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility

AbstractHighcarrier concentration and low mobility in Bi2Se3 hide thetopological surface states (TSS). In the 2D ternary topological insulator (TI) Bi2–xSbxSe3,compensatory Sb doping regulates the carrier concentration and mobility withambipolar performance, together with the ultrathin thickness; these factorsmake the TSS in the 2D ternary TI Bi2–xSbxSe3 more observable. Here, a chemical vapor deposition (CVD) method is provided for synthesizing ultrathin Sb‐doped Bi2Se3 nanoplates with dimensions of 2–126 nm in thickness, 3–100 µm in lateral size, and an average Sb doping ranging from 0.15 ≤ x ≤ 0.75. Bi2–xSbxSe3 field effect transistors and Hall devices are manufactured to determine the carrier concentration and mobility of the obtained Bi2–xSbxSe3 nanoplates. These findings demonstrate that the 2D carrier concentration for Bi2–xSbxSe3 nanoplates can decrease up to 1.6 × 1012 cm–2. Furthermore, field‐effect mobility and Hall mobility of up to 3411 cm2 V–1s–1 and 6462 cm2 V–1 s–1, respectively, are realized. A strong ambipolar field effect is found in low‐carrier‐density Bi2–xSbxSe3 nanoplates, proving that these nanostructures may be freely controlled in terms of carrier type and concentration. The synthesis of high‐quality Bi2–xSbxSe3 nanoplates with low‐carrier concentration and high‐mobility provides a platform for investigating TI characteristics more clearly.

Growth of thin-film magnetic nanostructures promising for spintronics applications

Multilayered metallic nanostructures are promising for the fabrication of spin valves based on the giant magnetoresistive effect and for studies of the nature of topological magnetism, aimed at the development of new nanoscale data storage and transfer devices, e.g. those based on magnetic skyrmions. It is still an important task to develop methods of synthesis and configuration of thin-film nanostructures and control of spin textures in those nanostructures under electric and spin currents generated as a result of the spin Hall effect in external electric fields. Thin-film polycrystalline ferromagnetic / heavy metal Ru(10nm)/Co(0,8)/Ru(2), Ru(10)/Co(0,8)/Ru(2)/W(4), Pt(5)/Co(0,8)/MgO(2)/Pt(2) and Pt(15)/Co(0,8)/MgO(2)/Pt(2) nanostructures have been synthesized using magnetron sputtering. Electric contacts and Hall structures with different conductive bridge thicknesses have been synthesized on the specimens using electron beam photolithography. Experimental vibration magnetometric data have been utilized to calculate magnetic parameters of the specimens, i.e., saturation magnetization, magnetic anisotropy energy and field and coercive force as functions of ferromagnetic and heavy metal layer types. The domain structure of the specimens has been studied using Kerr microscopy. The electrical resistivity has been simulated and the critical current and current density of the nanostructures have been assessed. We show that all the film specimens exhibit perpendicular magnetic anisotropy and can be used in the studies of current-induced phenomena and spin moment transfer processes in nanostructures.

Non-Hermitian chiral anomalies in interacting systems

The emergence of chiral anomaly entails various fascinating phenomena such as anomalous quantum Hall effect and chiral magnetic effect in different branches of (non-)Hermitian physics. While in the single-particle picture, anomalous currents merely appear due to the coupling of massless particles with background fields, many-body interactions can also be responsible for anomalous transport in interacting systems. In this Letter, we study anomalous chiral currents in systems where interacting massless fermions with complex Fermi velocities are coupled to complex gauge fields. Our results reveal that incorporating non-Hermiticity and many-body interactions gives rise to additional terms in anomalous relations beyond their Hermitian counterparts. We further present that many-body corrections in the subsequent non-Hermitian chiral magnetic field or anomalous Hall effect are nonvanishing in nonequilibrium or inhomogeneous systems. Our findings advance efforts in understanding anomalous transport in interacting non-Hermitian systems. Published by the American Physical Society 2024

Spin-orbit optical Hall effect in π-vector fields.

Given the tremendous increase of data in digital era, vector vortex light with strongly coupled spin and orbital angular momenta of photons have attracted great attention for high-capacity optical applications. To fully utilize such rich degrees of freedom of light, it is highly anticipated to separate the coupled angular momentum with a simple but powerful method, and the optical Hall effect becomes a promising scheme. Recently, the spin-orbit optical Hall effect has been proposed in terms of general vector vortex light using two anisotropic crystals. However, angular momentum separation for π-vector vortex modes, another important part in vector optical fields, have not been explored and it remains challenging to realize broadband response. Here, the wavelength-independent spin-orbit optical Hall effect in π-vector fields has been analyzed based on Jones matrices and verified experimentally using a single-layer liquid-crystalline film with designed holographic structures. Every π-vector vortex mode can be decoupled into spin and orbital components with equal magnitude but opposite signs. Our work could enrich the fields of high-dimensional optics.

Quantum Hall Effect and Geometric Phase Factor in Strong Magnetic Fields

Quantum Hall Effect and Geometric Phase Factor in Strong Magnetic Fields

Micro-structuration effects on local magneto-transport in [Co/Pd]IrMn thin films

We measured the local magneto-transport (MT) signal with an out-of-plane magnetic field, including magneto-resistance (MR) and Extraordinary Hall effect (EHE), in exchange-biased [Co/Pd]IrMn thin multilayers that are micro-structured with a 100 μm window. We found that when measured locally around the window, the MT signal deviate from the expected behavior. We studied possible causes, including film micro-structuration, electrical contact geometry as well as magnetic field angular tilt. We found that tilting the magnetic field direction with respect to the normal direction does not significantly affect the MT signal, whereas the positioning and geometry of the contacts seem to highly affect the MT signal. For comparison purposes, we carried these MT measurements using the Van-der-Pauw method on a set of four microscopic contacts directly surrounding the window, and on another set of micro-contacts located outside the window, as well as a set of four contacts positioned several millimeters away of each other at the corners of the wafer. If the contacts are sufficiently far apart, the EHE and MR signals have the expected shape and are not significantly affected by the presence of the window. If, on the other hand, the contacts are micro-positioned, the shape of the EHE signal is drastically deformed, and may be modeled as a mix of the standard EHE and MR signals measured on the outer contacts. Furthermore, if the micro-contacts are located directly around the window, the deformation is amplified, and the weight of the MR signal in the mix is further increased by about 40 %. This suggests that the electron path in the Hall geometry is disturbed by both the proximity of the electrodes and by the presence of the window, which both contribute to the deformation for about two-third and one third, respectively.

Single Charged Particle Motion in a Flat Surface with Static Electromagnetic Field and Quantum Hall Effect

Taking into account the non separable solution for the quantum problem of the motion of a charged particle in a flat surface of lengths Lx and Ly with transversal static magnetic field B and longitudinal static electric field E, the quantum current, the transverse (Hall) and longitudinal resistivities are calculated for the state n = 0 and j = 0. We found that the transverse resistivity is proportional to an integer number, due to the quantization of the magnetic flux, and longitudinal resistivity can be zero for times t >> LxB/cE. In addition, using a modified periodicity of the solution, a modified quantization of the magnetic flux is found which allows to have IQHE and FQHE of any filling factor of the form v = k/l, with k, l ∈ Z.

The Detector Control System for the magnetic field sensors in New Small Wheel phase I upgrade of ATLAS detector

In conjunction with the High Luminosity upgrade of the Large Hadron Collider accelerator at CERN, the ATLAS detector is also undergoing an upgrade to handle the significantly higher data rates. The muon end-cap system upgrade in ATLAS, lies with the replacement of the Small Wheel. The New Small Wheel (NSW) is expected to combine high tracking precision with upgraded information for the Level-1 trigger. To accomplish this, small Thin Gap Chamber (sTGC) and MicroMegas detector technologies are being deployed. Due to their installation location in ATLAS, the effects of Barrel Toroid and End-Cap Toroid magnets on NSW must be measured. For the final experiment at ATLAS, each sTGC large double wedge will be equipped with magnetic field Hall effect sensors to monitor the magnetic field near the NSW. The readout is done with an Embedded Local Monitor Board (ELMB) called MDT DCS Module (MDM). For the integration of this hardware in the experiment, first, a detector control system was developed to test the functionality of all sensors before their installation on the detectors. Subsequently, another detector control system was developed for the commissioning of the sensors. Finally, a detector control system based on the above two is under development for the expert panels of ATLAS experiment. In this paper, the sensor readout, the connectivity mapping and the detector control systems will be presented.

Systematic Investigation of Solution-State Aggregation Effect on Electrical Conductivity in Doped Conjugated Polymers

Systematic Investigation of Solution-State Aggregation Effect on Electrical Conductivity in Doped Conjugated Polymers

Impurity band conduction in Si-doped β -Ga2O3 films

By combining temperature-dependent resistivity and Hall effect measurements, we investigate donor state energy in Si-doped β-Ga2O3 films grown using metal-organic vapor phase epitaxy. High-magnetic field (H) Hall effect measurements (–90 kOe ≤ H ≤ +90 kOe) showed non-linear Hall resistance for T < 150 K, revealing two-band conduction. Further analyses revealed carrier freeze out characteristics in both bands yielding donor state energies of ∼33.7 and ∼45.6 meV. The former is consistent with the donor energy of Si in β-Ga2O3, whereas the latter suggests a residual donor state. This study provides critical insight into the impurity band conduction and the defect energy states in β-Ga2O3 using high-field magnetotransport measurements.

Topological phase transition driven by magnetic field and topological Hall effect in an antiferromagnetic skyrmion lattice

The topological Hall effect (THE), given by a composite of electric and topologically non-trivial spin texture is commonly observed in magnetic skyrmion crystals. Here we present a study of the THE of electrons coupled to antiferromagnetic Skyrmion lattices (AF-SkX). We show that, in the strong Hund coupling limit, topologically non-trivial phases emerge at specific fillings. Interestingly, at low filling an external field controlling the magnetic texture, drives the system from a conventional insulator phase to a phase exhibiting THE. Such behavior suggests the occurrence of a topological transition which is confirmed by a closing of the bulk-gap that is followed by its reopening, appearing simultaneously with a single pair of helical edge states. This transition is further verified by the calculation of the the Chern numbers and Berry curvature. We also compute a variety of observables in order to quantify the THE, namely: Hall conductivity and the orbital magnetization of electrons moving in the AF-SkX texture.

Study of SOI Field-Effect Hall Sensors in the Partial Depletion Mode

Earlier, when studying with the help of instrument-technological simulation of the silicon-on-insulator field-effect Hall sensor (SOI FEHS) in the partial depletion mode, the effect of increasing its magnetic sensitivity was discovered. In this paper, we study the parameters of SOI-FEHS samples in various operation modes to experimentally confirm the discovered effect. To increase the measurement accuracy in the partial depletion mode, the FEHS design with a split drain is used. The optimal values ​​of the load resistances of the bridge circuit are determined. An analysis of the results of studying the experimental SOI-FEHS samples shows that the peak of the increased magnetic sensitivity is observed in the partial depletion mode. At a load resistance of 1 MΩ and a supply voltage of –9 V, the maximal magnetically induced signal approximately triples in the partial depletion mode compared with the full depletion mode. When recalculating the ΔU voltage difference on the load resistances to the magnetic sensitivity, the specific magnetic sensitivity of the FEHS in the partial depletion mode can reach values ​​of about 105 V/(A T), which is significantly higher than that of semiconductor Hall elements.

Tunable frequency response of topologically protected interface modes for membrane-type metamaterials via voltage control

The analogy of quantum spin Hall effect in phononic fields has received enormous attentions these years. A significant hallmark of quantum spin Hall effect is that it can support interface modes that are protected by topology and robust to structural disturbance. However, researches on this topic are often limited to the passive structures that manifest topologically protected interface modes at fixed and narrow frequency ranges. In view of the shortage of non-passive topological metamaterial systems, this work has a primary motive to study the active control of quantum spin Hall effect in soft membrane-type metamaterials (MAM). After introducing sandwiched membrane-type acoustic metamaterials, the plane wave expansion method is adopted to analytically capture the system dispersion properties. A finite element model is further developed and a very good convergence with analytical result is presented. Further, by adjusting locations of spraying discs in the honeycomb lattice without violating the C6v symmetry, topological phase inversion is observed around a double Dirac cone at the center of the Brillouin zone, separating the topologically trivial state from the nontrivial counterpart. The topologically protected interface modes (TPIMs) around the interface between metamaterials of trivial and nontrivial states are observed. Additionally, to actively control working frequency of the TPIM, an electrical voltage that lies within the locking-up limit is applied to MAM. It is concluded that the topological interface state and the topological bandgaps are very sensitive to the applied voltage, while the system localization behavior is not influenced by the voltage. Utilizing this topologically protected interface state analysis, a straight path and a zig-zag path are designed to control wave propagation in the structure. Conclusively, a voltage-controlled topological metamaterial system is designed to broaden the working frequency range of TPIM.

Low field hall effect for differentiating between the single- and double-layer graphenes

There is a number of powerful but costly and involved experimental techniques able to distinguish between the single- and double-layer graphene films. Here we suggest a less rigorous but easier test, which can be performed on a suspended or hexagonal boron nitride encapsulated graphene in low magnetic fields and at room temperatures. The test is based on the same physical property that is responsible for the unconventional quantum Hall effect in single-layer graphene—the cyclotron frequency dependence on the Fermi energy.

Properties of ITO thin films rapid thermally annealed in different exposures of nitrogen gas

Indium tin oxide (ITO) thin films were rapid thermal annealed (RTA) for 5 min at a temperature of 550 °C in different exposures of nitrogen gas. Effects of these exposures on the structural, morphological, electrical, and optical properties of these films were investigated using X-ray diffraction, atomic force microscopy and field emission-scanning electron microscopy, four-point probe and hall effect measurements, and ultraviolet–visible-near-infrared (UV–VIS–NIR) spectrophotometer, respectively. The un-exposed RTA ITO films maintained (400) plane preferential orientation similar to the un-annealed sample. However, this plane preferential orientation was reduced relative to (222) plane for exposed RTA sample. The grains and surface roughness parameters were reduced for exposed and enhanced for un-exposed RTA samples as compared to the un-annealed sample. Relatively higher electrical conductivity, average solar transmittance, and bandgap values were observed for ITO films annealed while exposed to nitrogen gas. The exposed RTA ITO films showed sheet resistance of 7.91 Ω sq−1, average solar transmittance of 83%, and bandgap of 3.93 eV. Findings from this study suggest that RTA exposure have the potential to control ITO thin films properties, hence, extending its potential applications.

Magnetic field and thermal Hall effect in a pyrochlore U(1) quantum spin liquid

The antiferromagnetic system on a rare-earth pyrochlore has been focused as a strong candidate of U(1) quantum spin liquid. Here, we study the phase transitions driven by external magnetic field and discuss the thermal Hall effect due to emergent spinon excitations with staggered gauge fields. Despite the spinons, the charge excitations of the effective action that carry spin-1/2 quantum number, do not couple to the external field, the emergent U(1) gauge field is influenced in the presence of external magnetic field. In particular, along the [111] and [110] directions, we discuss the possible phase transitions between U(1) spin liquids with different gauge fluxes are stabilized in fields. Beyond the cases where the gauge flux per plaquette is fixed to be either 0 or $\ensuremath{\pi}$, there exists a regime where the staggered gauge fluxes are stabilized without time-reversal symmetry. In such a phase, the thermal Hall conductivity ${\ensuremath{\kappa}}_{xy}/T\ensuremath{\sim}4.6\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}3}\phantom{\rule{4pt}{0ex}}\text{W}/({\text{K}}^{2}\phantom{\rule{0.16em}{0ex}}\text{m})$ is expected to be measurable below 1 K.

Numerical modelling of the performance-limiting factors in CZGSe solar cells

Numerical models are proposed that are able to describe the current–voltage (I-V) behaviour of two Cu2ZnGeSe4 (CZGSe) solar cells measured under different illuminations at 300 K. In the model, the doping density of the CZGSe layer and the mobility of carriers are determined by capacitance-voltage (C-V) profiling and AC field Hall effect measurement, respectively. Some of the other parameters in the solar cells, including the series and the shunt resistance, the metal work function of the back contact, defect properties and absorption coefficient in the absorber layer, are determined using a differential evolution algorithm by fitting of the model with the experimentally measured I-V curves. Sensitivity analysis of our proposed model with SCAPS-1D demonstrates that the low metal work function, which results in a hole barrier at the back contact, the low shunt resistance and the high series resistance of the cell can explain the low fill factor and the low efficiency in these cells.

P-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam Epitaxy

We have grown nonpolar nitrogen (N) doped a-plane zinc oxide (ZnO) films on r-plane sapphire substrates in order to eliminate the self-polarization component in the growth direction, which decreases the doping efficiency of N acceptors. Nonpolar a-ZnO:N films were grown by plasma-assisted molecular beam epitaxy (PA-MBE) using Zn metal and a plasma source of O2 and NO mixed gas. It was confirmed by reflection high-energy electron diffraction and x-ray diffraction that single phase a-plane ZnO:N films were grown on the r-plane sapphire substrates. After the PA-MBE growth, the post-annealing was performed in an oxygen atmosphere. Photoluminescence experiments showed donor–acceptor pair emissions increase with increasing the annealing temperature (≤ 700°C). AC magnetic field Hall effect measurements revealed that n-type conduction of the as-grown films clearly changed to the p-type at the annealing temperature of 650°C. The resistivity, hole concentration, and mobility were ρ = 3.4 Ω cm, p = 8.0 × 1017 cm−3, and μ = 2.3 cm2/Vs, respectively.