Field Effects In Organic Semiconductors Research Articles

High-Field Magnetoresistance of Organic Semiconductors

The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Land\'e g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called {\Delta}g mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.

Spectroscopic evidence for trap-dominated magnetic field effects in organic semiconductors

Polaron traps are ubiquitous in organic semiconductors and recent evidence suggests they might be crucial for the large observed magnetic field effects (MFEs) in organic semiconductors. Here we measure MFEs in polymer thin-film devices with engineered, radiative trap sites in order to spectroscopically investigate the influence of the traps. Surprisingly, the luminescence at the trap sites and the polymer backbone is found to have an opposite response to a magnetic field. All our results are compatible with a mechanism in which spin mixing at the traps can create the large MFEs observed on the backbone. This scenario is quantitatively confirmed by numerical drift-diffusion modeling with magnetic-field-dependent exciton densities at the traps. These insights solve an outstanding controversy within the research field.

Intrinsic magnetic field effects in organic semiconductors

Abstract

Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.

Large magnetic field effects in electrochemically doped organic light-emitting diodes

Large negative magnetoconductance (MC) of \ensuremath{\sim}12$%$ is observed in electrochemically doped polymer light-emitting diodes at sub-band-gap bias voltages (${V}_{\mathrm{bias}}$). Simultaneously, a positive magnetoefficiency (M\ensuremath{\eta}) of 9$%$ is observed at ${V}_{\mathrm{bias}}$ $=$ 2 V. At higher bias voltages, both the MC and M\ensuremath{\eta} diminish while a negative magnetoelectroluminescence (MEL) appears. The negative MEL effect is rationalized by triplet-triplet annihilation that leads to delayed fluorescence, whereas the positive M\ensuremath{\eta} effect is related to competition between spin mixing and exciton formation leading to an enhanced singlet:triplet ratio at nonzero magnetic field. The resultant reduction in triplet exciton density is argued to reduce detrapping of polarons in the recombination zone at low-bias voltages, explaining the observed negative MC. Regarding organic magnetoresistance, this study provides experimental data to verify existing models describing magnetic field effects in organic semiconductors, which contribute to better understanding hereof. Furthermore, we present indications of strong magnetic field effects related to interactions between trapped carriers and excitons, which specifically can be studied in electrochemically doped organic light-emitting diodes (OLEDs). Regarding light-emitting electrochemical cells (LECs), this work shows that delayed fluorescence from triplet-triplet annihilation substantially contributes to the electroluminescence and the device efficiency.

Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways

Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.

Time-resolved spin-dependent processes in magnetic field effects in organic semiconductors

We investigated the time-resolved magnetic field effects (MFEs) in tri-(8-hydroxyquinoline)-aluminum (Alq3) based organic light-emitting diodes (OLEDs) through the transient electroluminescence (EL) method. The values of magneto-electroluminescence (MEL) decrease with the time, and the decreasing slope is proportional to the driving voltage. Specifically, negative MELs are seen when the driving voltage is high enough (V > 11 V). We propose a model to elucidate the spin-dependent processes and theoretically simulate the time-resolved MELs. In particular, this dynamic analysis of time-resolved MELs reveals that the intersystem crossing between singlet and triplet electron-hole pairs and the triplet-triplet annihilation are responsible for the time-resolved MELs at the beginning and enduring periods of the pulse, respectively.

The effect of Au Nanoparticle on Metal Organic Semiconductor Field effect Transistor on Plastic Substrate by Transfer Method

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Electrical dipole-dipole interaction effects on magnetocurrent in organic phosphorescent materials

This letter reports the experimental studies on electrical dipole-dipole interaction effects on magnetocurrent (MC) and magneto-electroluminescence (MFEEL) based on two phosphorescent dyes: heavy-metal complex Ir(ppy)3 and Ir(ppy)2(acac) with strong spin-orbital coupling but different electrical dipole moments. We find that the Ir(ppy)3 with strong electrical dipole moment shows negligible MC and MFEEL. However, the Ir(ppy)2(acac) with weak dipole moment exhibits appreciable MC and MFEEL. The experimental results suggest that the electrical dipole-dipole interaction can change the MC and MFEEL from capture-based regime, where charge carriers are captured through spin-dependent process at short distance, to intersystem crossing-based regime, where charge carriers are captured through spin random process at long distance. As a result, changing electrical dipole-dipole interaction presents a new pathway to tune magnetic field effects in organic semiconductors.

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Conformationally Twisted Semiconducting Polythiophene Derivatives with Alkylthiophene Side Chain: High Solubility and Air Stability

We report the synthesis of polythiophene derivatives that contain decylthiophenyl side chains, using synthetic strategies that achieve high organic semiconductor field effect mobilities by enhancing the π-conjugation in the side-chain conjugated system. With increased charge densities, we obtained high field effect mobilities, up to 0.050 and 0.003 cm2/(V s) from poly(3,4′′′-di(decylthiophenyl) sexithiophene) (PDTST) and poly(3,4′′′-di(decylthiophenyl) quaterthiophene) (PDTQT), respectively. PDTQT and PDTST are characterized by UV−vis, DSC, AFM images, and GIXD patterns. Increased conformational rotation in the main backbone, caused by intramolecular repulsion between neighboring thiophene units, lowers the HOMO level and introduces remarkable chemical stability in the presence of air as well as increases processability due to high solubility. The high solubility and oxidative stability of PDTST and PDTQT indicate that these side-chain conjugation system strategies have the potential for improving other thiophene-based semiconducting polymers.

Transient Charge Carrier Transport Effects in Organic Field Effect Transistor Channels

AbstractTransient phenomena that impact the speed of electron devices fabricated from organic semiconductor materials are of critical importance for the development of this new technology. Here we investigate theoretically and experimentally the effects of traps on the establishment and the depletion of the conducting channel in organic semiconductor field effect transistors (OFETs). The device structures explored resemble typical organic thin-film transistors with one of the channel contacts removed. The channel length is varied, and generally is longer than in typical OFETs, in order to vary the carrier transit time. By measuring the displacement current associated with charging and discharging of the channel in these capacitors, transient effects on the carrier transport in organic semiconductors may be studied. When carriers are injected into the device, a conducting channel is established with traps that are initially empty. Gradual filling of the traps then modifies the transport characteristics of the injected charge carriers. In contrast, DC experiments as they are typically performed to characterize the transport properties of organic semiconductor channels investigate a steady state with traps partially filled. Numerical and approximate analytical models of the formation of the conducting channel and the resulting displacement currents are presented. Two simple scenarios are considered first: the spatially-averaged carrier density model neglects carrier dynamics but shows the salient trapping/detrapping effects. Second: a simple geometric model neglects traps but elucidates the effect of carrier dynamics and is used to define an effective mobility that can be extracted from experiments. Finally, numerical simulations are used to study the dynamical and trap effects together. Comparing the average trapping time with the time scale of the current transient sheds light on the influence of traps on the effective mobility. If the average trapping time is very long the effect of traps is negligible and the mobility is largely unaffected by traps on the timescale of the experiment. If the average trapping time is short the effective mobility is reduced but it is time-independent. However, the effective mobility changes with time if the average trapping time is comparable to the current transient interval, eventually reaching a constant value once the trapping and detrapping events balance. Furthermore, the temperature dependence of the effective mobility arising from the temperature dependence of the trap emission rate is explored. Experimental data for pentacene based devices of different channel length and obtained over in the temperature range 120K < T < 300K support the concepts of the physical model.

Study on the corner effect in new grooved-gate nMOSFET

The function and influence of the corner effect in groovedgate MOSFET is simulated using classical twodimensional device simulator PISCESⅡ. The electric field of the channel in groovedgate metalorganic semiconductor field effect transistor(MOSFET) and impact on the threshold and hot carrier effect are studied. The corner effect is very favorable to suppressing short channel effects and hot carrier effects. The impact of corner effect on groovedgate MOSFET is changed with the change of the corner, and is the largest at about 45°. Therefore， the groovedgate MOSFET has a very great application prospect in deep submicro device architecture.