Abstract
The function and influence of the corner effect in groovedgate MOSFET is simulated using classical twodimensional device simulator PISCESⅡ. The electric field of the channel in groovedgate metalorganic semiconductor field effect transistor(MOSFET) and impact on the threshold and hot carrier effect are studied. The corner effect is very favorable to suppressing short channel effects and hot carrier effects. The impact of corner effect on groovedgate MOSFET is changed with the change of the corner, and is the largest at about 45°. Therefore， the groovedgate MOSFET has a very great application prospect in deep submicro device architecture.
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