Field-effect Transistor Devices Research Articles

Prediction of Electrical Characteristics of Fin Field-effect Transistor Devices Based on Simulation Using Deep Learning Method

Prediction of Electrical Characteristics of Fin Field-effect Transistor Devices Based on Simulation Using Deep Learning Method

Machine Learning‐Guided Design of 10 nm Junctionless Gate‐All‐Around Metal Oxide Semiconductor Field Effect Transistors for Nanoscaled Digital Circuits

In this paper, we introduce an innovative design approach based on combined numerical simulations and machine learning (ML) analysis to investigate the design key parameters of ultra‐low scale junctionless gate‐all‐around (JLGAA) field‐effect transistor (FET) devices. To this end, precise 3D numerical models that incorporate quantum effects and ballistic transport are employed to simulate the current–voltage (I–V) characteristics of 10 nm‐scale JLGAA FET devices. The influence of design parameter variations and high‐k dielectric material on the subthreshold characteristics is thoroughly examined. Various ML algorithms were employed to analyze and classify the key design parameters influencing the subthreshold figures‐of‐merit (FoMs), the subthreshold swing (SS) factor and ION/IOFF ratio. The obtained results highlight that channel radius and channel doping design parameters are particularly important for affecting swing factor behavior. Similarly, these features also play a significant role in predicting and affecting ION/IOFF current ratio values. Additionally, machine learning is used to determine the optimal design parameters for each figure of merit (FoM) output value. In this context, the models effectively predicted both ION/IOFF current ratios and SS classification, with Naive Bayes achieving an accuracy of 90.8% for ION/IOFF and 92.6% for SS, showcasing the model's robustness in these classification tasks.

Dry Transfer of van der Waals Junctions of Two-Dimensional Materials onto Patterned Substrates Using Plasticized Poly(vinyl chloride)/Kamaboko-Shaped Polydimethylsiloxane.

Two-dimensional (2D) materials can be transferred onto substrates with various surface structures, opening up multiple functions and applications for 2D materials in the form of suspended membranes. In this paper, we present a method for transferring exfoliated 2D crystal flakes from SiO2 substrates onto patterned substrates using a poly(vinyl chloride) (PVC) layer mounted on a polydimethylsiloxane (PDMS) stamp structure. 2D crystal flakes can be transferred onto various patterned structures such as grooves, round holes, and periodic hole or groove patterns. Our method can also be used to fabricate suspended van der Waals (vdW) heterostructures by assembling 2D crystal flakes on the PVC/PDMS stamp and then transferring them onto patterned substrates. The adhesiveness and curvature of the PVC/PDMS stamp were tuned, and a high successful transfer rate was realized due to the use of kamaboko-shaped (semicylindrical) PDMS and the addition of an appropriate amount of a high-viscosity plasticizer to the PVC layer. Taking advantage of this method, we demonstrate the facile fabrication, simply by transferring a vdW heterostructure onto an Au-coated groove substrate, of a suspended vdW field-effect transistor device with the carrier density tuned using ionic gating. This method enables the transfer of 2D crystal flakes and vdW heterostructures onto various patterned substrates, and hence it should help to advance suspended 2D materials research.

A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs

ABSTRACTThis paper presents a novel method for nonlinear modeling GaAs field‐effect transistors (FETs) in a common gate (CG) configuration, which is crucial for the effective design and thorough assessment of RF switch circuits. By focusing solely on a CG‐based GaAs FET for RF switch device characterization and modeling, the modeling process is streamlined compared to traditional methods that involve both CG and common source (CS) devices. The direct measurement of both DC and RF characteristics using the CG device enhances the accuracy of model parameter extraction. This approach ensures consistency in model and simulation applications as the CG topology aligns with devices commonly found in RF switch circuits. Moreover, to enhance predictive accuracy regarding the dispersion effect, an improved equation of drain‐source current has been incorporated. The empirical validation of the model reveals good agreements in terms of insertion loss, isolation, and output power performance for the CG GaAs FET device, including a wide band single‐pole double‐throw (SPDT) switch Monolithic Microwave Integrated Circuit (MMIC).

Modelling of Cut-off Frequency of Armchair Graphene Nanoribbon Tunnel Field Effect Transistor Using Transfer Matrix Method

Graphene is considered as a promising two-dimensional material for electronic device applications due to its high charge carrier mobility and it is extremely thin in size. As a material, graphene has great potential for the development of high-speed nano electric devices. Graphene can be used as a channel material in Tunnel Field Effect Transistor (TFET). In this study, the cut-off frequency of the armchair graphene nanoribbon tunnel field effect transistor (AGNR-TFET) device was modelled quantum mechanically. The solution of the Dirac-like Hamiltonian and Poisson equations self-consistently is used to determine the potential profile of device and the transmittance is calculated using the transfer matrix method (TMM). The Landauer formulation with the help of Gauss Legendre Quadrature Method (GLQM) is used to calculate the tunnelling current and the cut-off frequency of AGNR-TFET. The calculation results showed that the cut-off frequency increased as the drain voltage increased, while the increase in channel length and the N-index graphene made the cut-off frequency decreased. Moreover, the thicker the oxide layer could increase the cut-off frequency and the higher the temperature on the device would reduce the cut-off frequency.

First-principles prediction of high carrier mobility for β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers

The recently synthesized monolayer MoSi2N4 (Science 2020, 369, 367) exhibits exceptional environmental stability, a moderate band gap, and excellent mechanical properties, presenting exciting opportunities for the exploration of two-dimensional (2D) MX2Z4 materials. However, the low carrier mobility of α-phase MoSi2N4 significantly limits its potential applications in field-effect transistor (FET) devices. In this study, we systematically investigate the structural stability, elastic properties, and carrier mobility of a novel family of β-phase MX2N4 (M = Mo, W; X = Si, Ge) monolayers through first-principles calculations. Our findings reveal that these β-phase MX2N4 monolayers demonstrate remarkable dynamic, thermal, and mechanical stability. Specifically, we identify the MoSi2N4, MoGe2N4, WSi2N4, and WGe2N4 monolayers as semiconductors with band gaps of 2.70 eV, 1.57 eV, 3.12 eV, and 1.93 eV, respectively, as calculated using the HSE06 functional. Moreover, the MX2N4 monolayers exhibit significant elastic anisotropy, characterized by high ideal tensile strengths and a critical tensile strain exceeding 25%. Notably, the WGe2N4 monolayer displays exceptional anisotropic in-plane charge transport, achieving mobility levels of up to 104 cm2V− 1S− 1, surpassing those of the α-phase MX2N4 monolayers. These novel ternary monolayer structures have the potential to broaden the 2D MX2Z4 material family and emerge as promising candidates for applications in field-effect transistors.

The Many Facets of RuII(dppe)2 Acetylide Compounds.

In this contribution, we describe the various research domains in which RuII alkynyl derivatives are involved. Their peculiar molecular properties stem from a strong and intimate overlap between the metal centered d orbitals and the π system of the acetylide ligands, resulting in plethora of fascinating properties such as strong and tunable visible light absorption with a strong MLCT character essential for sensing, photovoltaics, light-harvesting applications or non-linear optical properties. Likewise, the d/π mixing results in tunable redox properties at low potential due to the raising of the HOMO level, and making those compounds particularly suited to achieve redox switching of various properties associated to the acetylide conjugated ligand, such as photochromism, luminescence or magnetism, for charge transport at the molecular level and in field effect transistor devices, or charge storage for memory devices. Altogether, we show in this review the potential of RuII acetylide compounds, insisting on the molecular design and suggesting further research developments for this class of organometallic dyes, including supramolecular chemistry.

(Keynote) Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices

After a short description of the evolution of metal-oxide-semiconductor (MOS) device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-layer stacks used for complementary field effect transistor (CFET) devices. They contain two different Ge concentrations and have been grown using conventional process gases. A relatively high growth temperature is used to obtain acceptable Si and SiGe growth rates. Still island growth has been suppressed for Ge concentrations up to 40%. Excellent structural and optical material properties of the Si/SiGe multi-layer stack will be reported, with up to 3 + 3 Si channels in the top and bottom part of the stack, respectively. The absence/presence of lattice defects has been verified by room temperature photoluminescence measurements. Photoluminescence measurements at low temperatures are used to study band-to-band luminescence from individual sub-layers and to illustrate the optical material quality of the CFET stack.

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

High-Performance Semiconducting Carbon Nanotube Transistors Using Naphthalene Diimide-Based Polymers with Biaxially Extended Conjugated Side Chains.

Polymer-wrapped single-walled carbon nanotubes (SWNTs) are a potential method for obtaining high-purity semiconducting (sc) SWNT solutions. Conjugated polymers (CPs) can selectively sort sc-SWNTs with different chiralities, and the structure of the polymer side chains influences this sorting capability. While extensive research has been conducted on modifying the physical, optical, and electrical properties of CPs through side-chain modifications, the impact of these modifications on the sorting efficiency of sc-SWNTs remains underexplored. This study investigates the introduction of various conjugated side chains into naphthalene diimide-based CPs to create a biaxially extended conjugation pattern. The CP with a branched conjugated side chain (P3) exhibits reduced aggregation, resulting in improved wrapping ability and the formation of larger bundles of high-purity sc-SWNTs. Grazing incidence X-ray diffraction analysis confirms that the potential interaction between sc-SWNTs and CPs occurs through π-π stacking. The field-effect transistor device fabricated with P3/sc-SWNTs demonstrates exceptional performance, with a significantly enhanced hole mobility of 4.72 cm2 V-1 s-1 and high endurance/bias stability. These findings suggest that biaxially extended side-chain modification is a promising strategy for improving the sorting efficiency and performance of sc-SWNTs by using CPs. This achievement can facilitate the development of more efficient and stable electronic devices.

Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach.

One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.

Algorithm prediction of single particle irradiation effect based on novel TFETs

In order to predict the single particle irradiation of tunnel field effect transistor (TFET) devices, a deep learning algorithm network model was built to predict the key characterization parameters of the single particle transient. Computer aided design (TCAD) technique is used to study the influence of single particle effect on the novel stacked source trench gate TFET device. The results show that with the increase of drain voltage, incident width of heavy ions (less than 0.04μm), and linear energy transfer, the drain transient current and collected charge also increase. The prediction results of deep learning algorithm show that the relative error percentage of drain current pulse peak (IDMAX) and collected charge (Qc) is less than 10%, and the relative error percentage of most predicted values is less than 1%. Comparison experiments with five traditional machine learning methods (support vector machine, decision tree, K-nearest algorithm, ridge regression, linear regression) show that the deep learning algorithm has the best performance and has the smallest average error percentage. This data-driven deep learning algorithm model not only enables researchers who are not familiar with semiconductor devices to quickly obtain the transient data of a single particle under any conditions; at the same time, it can be applied to digital circuit design as a data-driven device model reflecting the reliability of single particle transient. The application of deep learning in the field of device irradiation prediction has a highly promising prospect in the future.

Linear Non-benzenoid Isomer of Acene Fusing Chrysene with Azulene Units.

Non-benzenoid polycyclic aromatic hydrocarbons (PAHs) have received considerable attention owing to their distinctive optical and electrical properties. Nevertheless, the synthesis and optoelectronic application of non-benzenoid PAHs remain challenging. Herein, we present a facile synthesis of linear non-benzenoid PAH with an armchair edge, diACh, by fusing chrysene with two azulene units. We systematically investigated the optical and electrical properties, which were also compared to its isomers, including benzenoid and non-benzenoid zigzag edge isomers. diACh exhibits global aromaticity, good planarity, and suitable highest occupied molecular orbital/lowest unoccupied molecular orbital energy levels. The protonation of diACh in solution successively forms a stable tropylium cation and dication. Moreover, the neutral, cationic, and dicationic states of diACh can be transformed with remarkable reversibility during the protonation-deprotonation process, as confirmed by ultraviolet-visible absorptions, fluorescence spectra, 1H nuclear magnetic resonance, and theoretical calculations. Additionally, we fabricate p-type organic field-effect transistor (OFET) devices based on diACh with hole mobility up to 0.026 cm2 V-1 s-1, and we further develop OFET-based acid vapor sensors with good sensitivity, recyclability, and selectivity. These findings underscore the unique properties of linear non-benzenoid PAHs with an armchair edge engendered by the fusion of azulene with the acene backbone, showcasing prospective applications in organic optoelectronics.

Single-Walled Carbon Nanotube Based Field-Effect Transistors Functionalized with Odorant Receptors for Biosensing Applications

Bioelectronic detection of volatile organic compounds (VOC) has been demonstrated in a wide range of applications, with early reports focusing on environmental exogenous VOCs due to their adverse effects on human health; bacterial VOC signatures used as disease biomarkers, etc. Carbon nanotube field-effect transistors (CNT-FETs) are considered promising devices for bioelectronic detection due to their sensitivity, robustness and compatibility with microelectronic fabrication technologies. However, implementation of CNT-FETs still faces many challenges. Current VOCs detection approaches rely on separation techniques coupled with mass spectrometry, necessitating expensive equipment, labor-intensive preparation steps and trained personnel, and are not suitable for field use. Overcoming the challenges in the development of bioelectronic CNT-FET sensors holds great promise for high-throughput screening of VOCs.The natural insect odorant receptors (ORs) are highly attractive probes, potentially allowing ultrahigh specificity for VOC biosensing. Insect ORs exhibit remarkable sensitivities and the ability to selectively detect a vast number of VOCs. We have recently developed OR-functionalized carbon nanotube field-effect transistor (FET) devices. These FET devices comprise an isolated single-walled carbon nanotube (SWCNT), serving as the conducting channel material, functionalized with multiple insect ORs. These hybrid devices are capable of transducing ligand binding into an electronic current, without amplification. The insect OR-functionalized CNT FET were applied for the detection of several markers of environmental and clinical importance including Indole, Skatole, Octen-3-ol and Nonyl-aldehyde.We have developed a bioelectronic assay platform that contains a chip with 61 ORs-functionalized CNT-FET devices. Our unique functionalization method is based on directing the attachment of a native ORs-containing nanovesicles (which we have exogenously expressed and functionally characterized) to a generated CNT-FET point defect. Target binding-induced ionic current and conformational changes of ORs affect an electric field that modulates the device conductance.

Investigation of Neuromorphic Behaviors in Access Regions-Integrated Van Der Waals Heterostructures

The emergence of neuromorphic devices has disrupted the traditional von Neumann architecture, providing a solution to the challenges of simulating neural parallel processing and power consumption in conventional computer architectures [1]. Access regions (ARs) are strategically created and positioned in proximity to source and drain electrodes, resulting in a channel that does not overlap with the floating gate (FG) [2]. In this study, we investigated ARs integrated van der Waals heterostructural field-effect transistor (AR-VH-FET) device, constructed by vertically stacking several 2D materials. Specifically, molybdenum disulfide (MoS2) served as a channel, hexagonal boron nitride (h-BN) as a tunneling layer, and graphene (Gr) as the FG. We conducted measurements on the transfer and output characteristics to characterize the electrical performance of the AR-VH-FET. Under a fixed VDS, with the application of positive and negative VBG as programming and erasing voltages respectively, we measured device retention and endurance. AR-VH-FET devices not only emulate basic neuromorphic functions but also replicate biological characteristics.

Solution Processable Carbon Nanotube-Perovskite Nanohybrids

Carbon nanotubes (CNTs) based nanohybrids have attracted considerable interest for their potential in the design of innovative low-dimensional heterostructures. These nanohybrids can offer unique properties, including enhanced electronic transport and tunability, with a diverse range of optoelectronic applications.Here we present a novel approach for the synthesis of solution-processable nanohybrids made of single-walled carbon nanotubes (SWCNTs) and methylammonium-lead-iodide (MAPI) perovskites, where the CNTs act as templates for the facile and tuneable formation of anisotropic perovskite nanocrystals.We will present the structural characterization and electronic properties of the developed CNT-perovskite nanohybrids and demonstrate their integration (from solution) in field-effect transistor device configurations. By harnessing the synergistic properties of carbon nanotubes and perovskite nanocrystals, we will discuss pathways for the development of photoresponsive devices displaying sensitivity to a broad range of illumination wavelengths.The strategy presented here is of general applicability for the templated synthesis of perovskite nanocrystals toward the fabrication of solution processable in nanoscale optoelectronic devices.

Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors

Two-dimensional (2D) materials holding appropriate bandgaps, high carrier mobility, and long carrier lifetime require to be urgently explored as electronic devices such as field effect transistors (FETs) become more and more miniaturized. Herein, single-layer (SL) InGeS is thoroughly investigated using first-principles calculations. Theoretical results confirm SL InGeS has nice thermal and dynamical stability at 300 K. SL InGeS holds a direct bandgap of 1.28 eV by HSE06, and its electrons and holes are inherently located at different atomic regions. In the visible range, SL InGeS displays a maximum optical absorption of ∼ 5 × 105 cm−1, surpassing that of most known 2D materials. Furthermore, SL InGeS possesses high electron mobility (∼11100 cm2 V−1 s−1) and relatively low hole mobility (∼1000 cm2 V−1 s−1), and its carrier lifetime is as long as 4.99 ns. In addition, an Ohmic contact is designed in the graphene/InGeS heterojunction, implying small current resistance. In brief, all these scientific findings promise SL InGeS is a hopeful candidate in ultrathin FET devices.

Development of Self-Doped Monolayered 2D MoS2 for Enhanced Photoresponsivity.

Transition metal dichalcogenides (TMDs) exist in two distinct phases: the thermodynamically stable trigonal prismatic (2H) and the metastable octahedral (1T) phase. Phase engineering has emerged as a potent technique for enhancing the performance of TMDs in optoelectronics applications. Nevertheless, understanding the mechanism of phase transition in TMDs and achieving large-area synthesis of phase-controlled TMDs continue to pose significant challenges. This study presents the synthesis of large-area monolayered 2H-MoS2 and mixed-phase 1T/2H-MoS2 by controlling the growth temperature in the chemical vapor deposition (CVD) method without use of a catalyst. The field-effect transistors (FETs) devices fabricated with 1T/2H-MoS2 mixed-phase show an on/off ratio of 107. Photo response devices fabricated with 1T/2H-MoS2 mixed-phase show ≈55 times enhancement in responsivity (from 0.32 to 17.4AW-1) and 102 times increase in the detectivity (from 4.1×1010 to 2.48×1012cmHzW-1) compare to 2H-MoS2. Introducing the metallic 1T phase within the 2H phase contributes additional carriers to the material, which prevents the electron-hole recombination and thereby increases the carrier density in the 1T/2H-MoS2 mixed-phase in comparison to 2H-MoS2. This work provides insights into the self-doping effects of 1T phase in 2H MoS2, enabling the tuning of 2D TMDs properties for optoelectronic applications.

Investigating the effect of scaling and temperature on the performance of improved junctionless nanowire FET through simulation analysis

An Improved Junctionless Nanowire Field Effect Transistor (I-JL-NWFET) device is proposed in this paper to address the limitations of conventional JL-NWFET. This research paper initially, comprehensively analyzes the impact of channel length (L) and channel thickness (t si ) scaling on the electrical, analog/RF, and linearity performance of I-JL-NWFET and JL-NWFET. The results suggest that the specific design features in I-JL-NWFET contribute to a more robust and less sensitive response to variations in scaling compared to its counterpart, JL-NWFET. Furthermore, an exploration into the impact of temperature on the electrical, analog/RF, and linearity performance is also conducted for both I-JL-NWFET and JL-NWFET. The electrical performance of I-JL-NWFET showcases a significantly reduced temperature sensitivity in parameters like drain current (I D ), Subthreshold Slope (SS) and Drain Induced Barrier Lowering (DIBL) compared to JL-NWFET. Subsequently, analyzing the analog/RF performance in the context of parameters such as transconductance (g m ), Transconductance Gain Factor (TGF), output conductance (g d ), early voltage (V EA ), total gate capacitance (C GG ), and cut-off frequency (f T ) under temperature variation, a lower degree of variability in I-JL-NWFET is observed compared to JL-NWFET. Furthermore, the linearity performance of I-JL-NWFET, assessed through parameters such as second and third-order transconductance (g m2 , g m3 ), second and third-order input voltage intercept points (VIP2, VIP3), and third-order intermodulation distortion (IIP3 and IMD3) is improved at the higher temperature than that of JL-NWFET.

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

In this paper, using a self-developed silicon carbide epitaxial reactor, we obtained high-quality 6-inch epitaxial wafers with doping concentration uniformity less than 2%, thickness uniformity less than 1% and roughness less than 0.2 nm on domestic substrates, which meets the application requirements of high-quality Schottky Barrier Diode (SBD) and Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) devices. We found that increasing the carrier gas flow rate can minimize source gas depletion and optimize the doping uniformity of the 6-inch epitaxial wafer from over 5% to less than 2%. Moreover, reducing the C/Si ratio significantly can suppress the “two-dimensional nucleation growth mode” and improve the wafer surface roughness Ra from 1.82 nm to 0.16 nm.