Coexistence Of Ferromagnetism Research Articles

Magnetic ferroelectric metal in bilayer Fe3GeTe2 under interlayer sliding

The inherent interlayer freedom in van der Waals stacked materials provides an excellent opportunity to investigate ferroelectric-like behavior through interlayer translation. Based on first-principles calculations, we find that the interlayer sliding in Fe3GeTe2 (FGT) bilayer enables the coexistence of polarization, metallicity, and ferromagnetism. We find that the polarization is induced by the uncompensated vertical interlayer charge transfer, and can be switched by an in-plane interlayer sliding. A moderate biaxial strain can reverse the polarization direction of the sliding FGT bilayer. The vertical polarization disentangles with the in-plane conductivity as was previously seen in the sliding ferroelectric WTe2 bilayer. Our work proposes an extremely rare magnetic ferroelectric metal phase that is useful for magnetoelectric and spintronic applications.

In Situ Local Imaging of Ferromagnetism and Superconductivity in RbEuFe4As4.

The coexistence of superconductivity and ferromagnetism is an intrinsically interesting research focus in condensed matter physics, but the study is limited by low superconducting (Tc) and magnetic (Tm) transition temperatures in related materials. Here, we used a scanning superconducting quantum interference device to image the in situ diamagnetic and ferromagnetic responses of RbEuFe4As4 with high Tc and Tm. We observed significant suppression of the superfluid density in the vicinity of the magnetic phase transition, signifying fluctuation-enhanced magnetic scatterings between Eu spins and Fe 3d conduction electrons. Intriguingly, we observed multiple ferromagnetic domains that should be absent in an ideal magnetic helical phase. The formation of these domains demonstrates a weak c-axis ferromagnetic component probably arising from the Eu spin-canting effect, indicative of possible superconductivity-driven domain Meissner and domain vortex-antivortex phases, as revealed in EuFe2(As0.79P0.21)2. Our observations highlight that RbEuFe4As4 is a unique system that includes multiple interplay channels between superconductivity and ferromagnetism.

Coexistence of ferromagnetism and antiferromagnetic dimers in topological insulators

Coexistence of ferromagnetism and antiferromagnetic dimers in topological insulators

Coexistence of Ferromagnetism and Superconductivity at KTaO3 Heterointerfaces.

The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.

Two-Dimensional Os2Se3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism.

Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.

Competitive coexistence of ferromagnetism and metal–insulator transition of VO2 nanoparticles

We investigated the magnetic and electric properties of nanometer-sized vanadium dioxide (VO2) particles. VO2 nanoparticles were formed by milling VO2 powder. We measured the magnetic field dependence of the magnetization of the VO2 powder and nanoparticles. The VO2 powder did not exhibit ferromagnetism, whereas the VO2 nanoparticles exhibited ferromagnetism. In addition, we fabricated samples by bridging between electrodes with the VO2 nanoparticles, and the temperature dependence of their resistance was measured. Metal-insulator transitions (MITs) were observed, and the temperature range where the MIT occurred was wider than that in a typical bulk VO2. The VO2 nanoparticles exhibited these properties of ferromagnetism and MIT possibly because of the surface and size effects of the VO2 nanoparticles. These results indicate the first observation of the competitive coexistence of ferromagnetism and MIT of VO2 nanoparticles.

Piezoelectric response and ferromagnetic order in 2D Janus FeGeN3

Two-dimensional (2D) materials with ferromagnetism and piezoelectricity have drawn great attention due to their promising application and fundamental significance. Using first-principles swarm structure search calculations, we have predicted a 2D Janus FeGeN3, with quintet atomic layers of N–Fe–N–Ge–N, demonstrating a desirable coexistence of ferromagnetism and piezoelectricity. It has an out-of-plane piezoelectric response of −0.31 pm/V, a robust ferromagnetic order with a Curie temperature (TC) of 302 K, and an excellent semiconductivity with a bandgap of 1.99 eV. Its ferromagnetic coupling is derived from the super-exchange interaction between Fe atoms mediated by multi-type N atoms. Moreover, the biaxial tensile strain is in the favor of the enhancement of ferromagnetism. These intriguing properties make Janus FeGeN3 an attractive candidate for spintronic devices with multifunctionality.

Coexistence of Ferromagnetism and Ferroelectricity in Cu-Intercalated Bilayer CrI3.

Design of two-dimensional (2D) multiferroic materials with two or more ferroic orders in one structure is highly desired in view of the development of next-generation electronic devices. Unfortunately, experimental or theoretical discovery of 2D intrinsic multiferroic materials is rare. Using first-principles calculation methods, we report the realization of multiferroics that couple ferromagnetism and ferroelectricity by intercalating Cu atoms in bilayer CrI3, Cux@bi-CrI3 (x = 0.03, 0.06, and 0.25). Our results show that the intercalation of Cu atoms leads to the inversion symmetry breaking of bilayer CrI3 and produces intercalation density-dependent out-of-plane electric polarization, around 18.84-90.31 pC·cm-2. Moreover, the switch barriers of Cux@bi-CrI3 in both polarization states are small, ranging from 0.31 to 0.69 eV. Furthermore, the magnetoelectric coupling properties of Cux@bi-CrI3 can be modulated via varying the metal ion intercalation density, and half-metal to semiconductor transition can be occurred by decreasing the intercalation density of metal ions. Our work paves a practical path for 2D magnetoelectron coupling devices.

Interface-induced superconductivity in magnetic topological insulators

The interface between two different materials can show unexpected quantum phenomena. In this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer—the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics.

Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr2S3/WS2 Vertical Heterostructures.

Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.

Effect of Fermi surface topology change on the Kagome superconductor CeRu2 under pressure

The cubic Laves phase compound CeRu2 with a Kagome substructure of Ru has been investigated to understand myriad fascinating phenomena resulting from competition among its various physical and geometric features. Such phenomena include flat bands, van Hove singularities, Dirac cones, reentrant superconductivity, magnetism, the Fulde–Ferrell–Larkin–Ovchinnikov state, valence fluctuations, time-irreversible anisotropic s-state superconductivity, etc. Extensive studies have thus been carried out since 1958 when the highly unusual coexistence of superconductivity and ferromagnetism was proposed for the mixed compounds (Ce,Gd)Ru2. Activity has accelerated in recent years due to increasing interest in topological states in superconductors. However, there has been little investigation of the mutual influence of these fascinating states. Therefore, we systematically investigated the superconductivity and possible Fermi surface topological change in CeRu2via magnetic, resistivity, and structural measurements under pressure up to ∼168 GPa. An unusual phase diagram that suggests an intriguing interplay between the compound's superconducting order and Fermi surface topological order has been constructed. A resurgence in its superconducting transition temperature was observed above 28 GPa. Our experiments have identified a structural transition above 76 GPa and a few tantalizing phase transitions driven by high pressure. Our high-pressure results further suggest that superconductivity and Fermi surface topology in CeRu2 are strongly intertwined.

The Type-II/Type-I Crossover in Dirty Ferromagnetic Superconductors.

In this work, we investigate the intertype (IT) domain in strongly disordered ferromagnetic superconductors with a Curie temperature lower than the superconducting critical temperature. In such unique materials, the coexistence of superconductivity and ferromagnetism allows for the exploration of both unconventional superconductivity and the interplay between magnetism and superconductivity. The study utilizes an extended Ginzburg-Landau model for the dirty limit to calculate the boundaries of the IT domain, which is characterized by a complex vortex-vortex interaction and exotic vortex configurations. The analysis reveals that the IT domain in dirty ferromagnetic superconductors is not qualitatively different from that in the clean case and remains similarly large, suggesting that disorder does not hinder the exploration of the rich variety of IT superconductivity in ferromagnetic superconductors. This work expands our understanding of the interplay between superconductivity and magnetism in complex materials and could guide future experimental studies.

Direct observation of intrinsic room-temperature ferroelectricity in 2D layered CuCrP2S6

Multiferroic materials have ignited enormous interest owing to their co-existence of ferroelectricity and ferromagnetism, which hold substantial promise for advanced device applications. However, the size effect, dangling bonds, and interface effect in traditional multiferroics severely hinder their potential in nanoscale device applications. Recent theoretical and experimental studies have evidenced the possibility of realizing two-dimensional (2D) multiferroicity in van der Waals (vdW) layered CuCrP2S6. However, the incorporation of magnetic Cr ions in the ferroelectric framework leads to antiferroelectric and antiferromagnetic orderings, while macroscopic spontaneous polarization is always absent. Herein, we report the direct observation of robust out-of-plane ferroelectricity in 2D vdW CuCrP2S6 at room temperature with a comprehensive investigation. Modification of the ferroelectric polarization states in 2D CuCrP2S6 nanoflakes is experimentally demonstrated. Moreover, external electric field-induced polarization switching and hysteresis loops are obtained in CuCrP2S6 down to ~2.6 nm (4 layers). By using atomically resolved scanning transmission electron microscopy, we unveil the origin of the emerged room-temperature ferroelectricity in 2D CuCrP2S6. Our work can facilitate the development of multifunctional nanodevices and provide important insights into the nature of ferroelectric ordering of this 2D vdW material.

Engineering room temperature multiferroicity and temperature dependent dielectric properties of Cr doped BaTiO3 ceramics

The coexistence of ferroelectricity, ferromagnetism, and piezoelectricity at room temperature in BaTi1-xCrxO3 (0 ≤ x ≤ 0.06) nanostructures is interesting and leads to the multiferroic nature of system. Sol-gel auto-combustion technique has been used for the synthesis of nanostructures. The XRD patterns along with Rietveld refinement analysis, confirm that the samples possess parent tetragonal perovskite structure in the P4mm space group. The oxygen vacancies stoichiometry ratio was estimated through XPS studies. The scanning electron microscopy (SEM) confirms the large grain size in the doped sample. The study of leakage current density reveals an increase in its value with the increase in Cr content due to defects induced in the system. P-E measurements confirm the ferroelectric nature of the samples that diminishes in the doped samples due to the high leakage current. Moreover, the estimated value of energy efficiency (η) was found to be maximum for the undoped sample. The undoped BaTiO3 has a diamagnetic character that is partially altered into weak ferromagnetic under the Cr-doping at the expense of decreasing polarization parameters. The temperature-dependent dielectric constant shows all characteristics of phase transitions in the samples. The doping of Cr enhances the ferroelectric to paraelectric phase transition temperature (Tc). The piezoelectricity remains preserved in the doped samples. Thus, the coexistence of ferroelectricity, ferromagnetism, and piezoelectricity at room temperature finalizes the multiferroic nature of the synthesized samples.

Escalated Phase Separation Driven Enhanced Magnetoresistance in Manganite/Iridate Epitaxial Heterostructures

AbstractPhase separation in manganites leads to unique magnetic and electronic properties. 50% Ca‐doped LaMnO3 (LCMO), at the boundary of ferromagnetic (FM) and antiferromagnetic (AFM) states in La1‐xCaxMnO3 (0 ≤ x ≤ 1), is an ideal system to study phase separation behavior. The investigation reveals the effect of a 5d‐metal perovskite SrIrO3 (SIO) on the phase separation, magnetic, and magnetoresistance (MR) properties of LCMO. Single‐layer and bilayer LCMO films, both appear purely ferromagnetic along the in‐plane (IP) magnetic field direction, but show the tendency of temperature‐dependent ferromagnetic and antiferromagnetic or charge‐ordered (CO) phase separation with the out‐of‐plane (OOP) applied field. The MR, and colossal magnetoresistance (CMR), observed in LCMO/SIO bilayers are two orders and an order of magnitude (in %) larger, respectively than that in the single‐layer film. The coexistence of FM and AFM/CO phases is responsible for the CMR and MR enhancement in the LCMO/SIO bilayer, pointing toward the importance of the phase separation and competition of both the individual materials in enhancing their magnetic and electronic properties.

Room temperature multiferroicity in a transition metal dichalcogenide

The coexistence of multiple ferroic orders, i.e., multiferroicity, is a scarce property to be found in materials. Historically, this state has been found mainly in 3-dimensional complex oxides, but so far, this state has still been elusive for the most widely studied and characterized family of 2-dimensional compounds, the transition metal dichalcogenides. In this study, we report the experimental realization of multiferroic states in this family of materials, at room temperature, in bulk single crystals of Te-doped WSe2. We observe the coexistence of ferromagnetism and ferroelectricity, evidenced in the presence of magnetization and piezoresponse force microscopy hysteresis loops. These findings open the possibility of widening the use and study of van der Waals-based multifunctional devices for nanoelectronics and spintronics applications.

Janus monolayer ScXY (X≠Y = Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction

Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X≠Y = Cl, Br and I) monolayers are predicted to be piezoelectric ferromagnetic semiconductors with dynamical, mechanical and thermal stabilities. They all show an in-plane easy axis of magnetization by calculating magnetic anisotropy energy (MAE) including magnetocrystalline anisotropy energy and magnetic shape anisotropy energy. The MAE results show that they intrinsically have no spontaneous valley polarization. The predicted piezoelectric strain coefficients d 11 and d 31 (absolute values) are higher than ones of most 2D materials. Moreover, the d 31 (absolute value) of ScClI reaches up to 1.14 pm V−1, which is highly desirable for ultrathin piezoelectric device application. To obtain spontaneous valley polarization, charge doping are explored to tune the direction of magnetization of ScXY. By appropriate hole doping, their easy magnetization axis can change from in-plane to out-of-plane, resulting in spontaneous valley polarization. Taking ScBrI with 0.20 holes per f.u. as an example, under the action of an in-plane electric field, the hole carriers of K valley turn towards one edge of the sample, which will produce anomalous valley Hall effect, and the hole carriers of Γ valley move in a straight line. These findings could pave the way for designing piezoelectric and valleytronic devices.

Terahertz Spin Current Pulses in Antiferromagnetic Oxide: The Role of Vacancy‐Induced Ferromagnetism

Antiferromagnetic oxides have attracted increasing attention for their outstanding peculiarities in spintronics. Crystal lattice defects that are present in antiferromagnetic oxides can influence their physical properties, such as vacancy‐induced ferromagnetism. Meanwhile, the generation and manipulation of ultrafast spin currents of antiferromagnetic insulators are highly desired. Although the generation and detection of terahertz spin current pulses in antiferromagnetic oxides have been realized, the effect of vacancy‐induced ferromagnetism on spin current in antiferromagnetic oxides is not yet known. Herein, the role of vacancy‐induced ferromagnetism on the terahertz spin current in antiferromagnetic nickel oxide thin films is reported. Structural and magnetic characterizations reveal that nickel vacancies effectively break the strong antiferromagnetic exchange coupling, giving rise to the coexistence of antiferromagnetism and ferromagnetism in NiO thin films. Notably, the enhancement of terahertz radiation associated with the photo‐induced ultrafast spin current of NiO thin film with the strongest ferromagnetism is the most significant. Besides, the nonlinear susceptibility tensor parameters related to the antiferromagnetic property of NiO thin films also change distinctly. The findings indicate that the defects of antiferromagnetic materials play a decisive role in the application of antiferromagnetic spintronics in the terahertz field.

Coexistence of Ferroelectricity and Ferromagnetism in Fullerene-Based One-Dimensional Chains.

One-dimensional (1D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized sensors, actuators, and memories. However, 1D materials with both ferroelectricity and ferromagnetismare quite rare. Herein, using first-principles calculations, a series of fullerene-based 1D chains, namely U2 C@C80 -M (M=Cr, Mn, Mo, and Ru) 1D chains with both ferroelectric (FE) and ferromagnetic (FM)properties is designed. Compared to individual U2 C@Ih (7)-C80 , the spontaneous polarization (Ps) in 1D chains is enhanced by about two to four times owing to the interaction between U2 C@Ih (7)-C80 fullerene and M (M=Cr, Mn, Mo, and Ru) atoms. Meanwhile, the introduction of transition metal atoms dopes electrons into U's 5f orbitals, leading to numerous intriguing magnetic properties, such as U2 C@C80 -Cr and U2 C@C80 -Mo as 1D ferromagneticsemiconductors, U2 C@C80 -Ru as 1D ferrimagnetic (FiM) semiconductor, and U2 C@C80 -Mn as 1D antiferromagnetic (AFM) semiconductor. Excitingly, it is found that magnetic ordering and electrical polarization can be modulated independently by linking different transition metal atoms. These findings not only broaden the range of 1D multiferroic materials, but also provide promising candidates for novel electronic and spintronic applications.

Terahertz Spin Current Dynamics in Antiferromagnetic Hematite.

An important vision of modern magnetic research is to use antiferromagnets (AFMs) as controllable and active ultrafast components in spintronic devices. Hematite (α-Fe2 O3 ) is a promising model material in this respect because its pronounced Dzyaloshinskii-Moriya interaction leads to the coexistence of antiferromagnetism and weak ferromagnetism. Here, femtosecond laser pulses are used to drive terahertz (THz) spin currents from α-Fe2 O3 into an adjacent Pt layer. Two contributions to the generation of the spin current with distinctly different dynamics are found: the impulsive stimulated Raman scatting that relies on the AFM order and the ultrafast spin Seebeck effect that relies on the net magnetization. The total THz spin current dynamics can be manipulated by a medium-strength magnetic field below 1 T. The control of the THz spin current achieved in α-Fe2 O3 opens the pathway toward tailoring the exact spin current dynamics from ultrafast AFM spin sources.