Ferromagnetic Order Research Articles

Unveiling exotic magnetic phase diagram of a non-Heisenberg quasicrystal approximant

A magnetic phase diagram of the non-Heisenberg Tsai-type 1/1 Au-Ga-Tb approximant crystal (AC) has been established across a wide electron-per-atom (e/a) range via magnetization and powder neutron diffraction measurements. The diagram revealed exotic ferromagnetic (FM) and antiferromagnetic (AFM) orders that originate from the unique local spin icosahedron common to icosahedral quasicrystals (iQCs) and ACs; The noncoplanar whirling AFM order is stabilized as the ground state at the e/a of 1.72 or less whereas a noncoplanar whirling FM order was found at the larger e/a of 1.80, with magnetic moments tangential to the Tb icosahedron in both cases. Moreover, the FM/AFM phase selection rule was unveiled in terms of the nearest neighbour (J1) and next nearest neighbour (J2) interactions by numerical calculations on a non-Heisenberg single icosahedron. The present findings will pave the way for understanding the intriguing magnetic orders of not only non-Heisenberg FM/AFM ACs but also non-Heisenberg FM/AFM iQCs, the latter of which are yet to be discovered.

Delving into the anisotropic interlayer exchange in bilayer CrI3

Bilayer CrI3 attracted much attention due to stacking-induced switching between the layered ferromagnetic and antiferromagnetic order. This discovery brought under the spotlight the interlayer Cr–Cr exchange interaction, which despite being much weaker than the intralayer exchange, plays an important role in shaping the magnetic properties of bilayer CrI3. In this work we delve into the anisotropic part of the interlayer exchange with the aim to separate the contributions from the Dzyaloshinskii–Moriya (DMI) and the Kitaev interactions (KI). We leverage the density functional theory calculations with spin Hamiltonian modeling and develop an energy mapping procedure to assess these anisotropic interactions with accuracy. After inspecting the rhombohedral and monoclinic stacking sequences of bilayer CrI3, we reveal a considerable DMI and a weak interlayer KI between the sublattices of a monoclinic bilayer. We explain the dependence of DMI and KI on the interlayer distance, stacking sequence, and the spin–orbit coupling strength, and we suggest the dominant superexchange processes at play. In addition, we demonstrate that the single-ion anisotropy in bilayer CrI3 is highly stacking-dependent, increasing by 50% from monoclinic to rhombohedral bilayer. Remarkably, our findings prove that iodines are highly efficient in mediating the DMI across the van der Waals gap, much owing to spatially extended 5p orbitals which feature strong spin–orbit coupling. Our study gives promise that the interlayer chiral control of spin textures, demonstrated in thin metallic films where the DMI is with a much longer range, can be achieved with similar efficiency in semiconducting two-dimensional van der Waals magnets.

Model' spinovogo stekla dlya kvantovykh yam GaAs/AlGaAs, legirovannykh nemagnitnymi primesyami, vblizi perekhoda metall–izolyator

In a previous report, we presented experiments which suggested that ferromagnetic ordering of the spins of localized holes in GaAs/AlGaAs quantum wells could be observed when doped with shallow (Be) acceptors at impurity concentrations near the metal-insulator transition. The compensating impurity (Si) was introduced into a narrow region at the center of the barriers [4]. In this paper, we present results from magnetotransport experiments performed on similar structures, but without the compensating impurity (Si). In these samples, the compensation degree is expected to be controlled by the background defects located at the edges of the quantum wells and within the barriers. At low temperatures T ≤ 10 K, we observed isotropic, linear magnetoresistance, anomalous behavior of the Hall effect as a function of the magnetic field, and slow relaxation of resistance after the application of a magnetic field. We explain this anomalous magnetotransport as the manifestation of a ferromagnetic transition or spin glass, originating from indirect spin exchange between localized holes on impurities near the metal-insulator transition. However, we note that perfect disorder, including signs of interspin interactions, leads to unstable configurations. In what follows, we present a model in which we start with this perfect disorder, but apply a procedure to obtain a stable configuration. We show that the resulting spin structure, a “closely packed” structure of “droplets,” can reproduce the features observed in the experiment, particularly isotropic, linear magnetoresistance.

Oxygen vacancies mediated changes in ferromagnetic, optical, Photoluminescent and electronic structure properties of Ho-doped CeO2 nanoparticles

The undoped CeO2 and Ce1-xHoxO2 (x = 0.03, 0.05 and 0.07) nanoparticles prepared using microwave assisted co-precipitation route are investigated using X-Ray Diffraction (XRD), UV–Vis–NIR, Raman, photoluminescence, X-ray Photoelectron Spectroscopy (XPS) and SQUID-VSM magnetometer. The XRD validates the inclusion of Ho3+ at the Ce3+/Ce4+ site while maintaining the crystal structure with development of defects and oxygen vacancies with expansion of the CeO2 nanolattice. The composition of the elements with desired stoichiometry is confirmed by Energy Dispersive X-ray spectra analysis. The absorption spectroscopy analysis reports the Urbach energy along with refractive index increases with Ho3+ doping and the optical band gap is decreased indicating red shift. All the nanoparticles are subjected to PL investigations to ascertain the oxygen vacancy and defect structure of nanoparticles. Raman active modes at ∼500 - 630 cm−1 verifies the existence of oxygen vacancies (Vo)., which are seen to rise with concentration of Ho-doping in the CeO2 lattice. When Ce4+ transforms into Ce3+, oxygen vacancies are generated in the lattice to maintain the charge neutrality, as can be seen by the Ce-3d, O-1s, and Ho-4d core level XPS spectra. To demonstrate that Ho3+ doping favours ferromagnetic ordering in the CeO2 lattice, the magnetic properties using the Bound Magnetic Polaron model and F centre exchange mechanism are discussed. The development of various complexes that involve host and doped cations are mediated by Vo suggests the existence of F0, F+, and F2+ centres. The weak ferromagnetic behaviour in Ho3+-doped CeO2 nanoparticles reinforce the relationship between Vo to explain the observed magnetic properties of nanoparticles.

Fe doping induced cluster/spin glass state and metamagnetic transition in phase separated La0.5Sr0.5Mn1−xFexO3

We report the impurity doping effects in manganites La0.5Sr0.5Mn1−xFexO3 (0 ≤ x ≤ 0.2) and the field-induced metamagnetic transition in which the antiferromagnetic insulating phase transforms into ferromagnetic metallic phase. The Rietveld refined results of XRD data display no obvious structure change with a significant degree of Fe3+ doping on Mn sites. Significant ferromagnetism suppression and magnetic inhomogeneity tendency upon Fe3+-doping are evidenced, phase separated and spin-glass like states are identified. With applying a pulsed high magnetic field up to 50 T, a metamagnetic transition was induced, especially clear for x ≥ 0.1 compounds, which exhibited an irreversible phase transition from antiferromagnetic to ferromagnetic phase, and a saturation magnetization was obtained. The replacement of Mn3+ by Fe3+ ions eliminates the effects of lattice structure change on the magnetic and electronic properties because of the very similar ionic size of Mn3+ and Fe3+, but reduces the Mn3+/Mn4+ ratio and depopulates the number of available hopping sites and the hopping electrons, thus weakens the double exchange interaction. The occurrence of the AFM superexchange interaction via Fe3+–O2−–Fe3+ and Fe3+–O2−–Mn3+ bonds may bring about the competition between the antiferromagnetic ordering and the ferromagnetic ordering, leading to a cluster/spin-glass behavior in the samples with high Fe dopants concentration.

An Ab-initio study on spin gapless semiconducting in novel quaternary heusler alloys RhCoVZ (Z = Al, Ga, and In): Insights into stability, electronic, magnetic, thermoelectric, and optical properties

The stability and half-metallic ferromagnetic properties of recently developed gapless semiconductor alloys, RhCoVZ (Z = Al, Ga, and In), were the subject of investigation in this research study. Three different non-equivalent structural configurations, namely type I, type II, and type III structures, have been examined. Among these compounds, Type I is characterized as the most stable phase in the ferromagnetic order, as opposed to the non-magnetic order. Through calculations of cohesive energies, formation energies, phonon dispersion curves, and elastic constants, we have demonstrated that RhCoVZ (Z = Al, Ga, and In) exhibits thermodynamic stability, as well as dynamic and mechanical. Using modified Becke-Johnson (mBJ) calculations, it has been revealed that RhCoVZ (Z = Al, Ga, and In) are spin gapless semiconductor half-metallic ferromagnets with an indirect bandgap. Additionally, it was observed that the electrons at the Fermi level (EF) are entirely spin-polarized. The total magnetic moment in all three compounds was determined to be an integer value of 2.00 µB per formula, in accordance with the Slater-Pauling rule (Mt = Zt - 24). All the calculations in this study were performed using density functional theory (DFT) based on the full-potential linearized augmented plane wave (FP-LAPW) method, which was implemented in the WIEN2k code. The effective mass of electrons/holes is (0.167/0.385) for RhCoVAl, (0.454/0.322) for RhCoVGa, and (0.604/0.242) for RhCoVIn. The thermoelectric properties of the three compounds were explored using the semi-classical Boltzmann transport theory. It was discovered that all three compounds exhibit high power factors and high Seebeck coefficients, with values reaching up to 1.5 mV/K for RhCoVAl and 1.25 mV/K for RhCoVGa. Based on the results, the highest observed ZT values for RhCoVZ (Z = Al, Ga, and In) are 0.95, 0.97, and 0.93, respectively. The study's findings indicate that these compounds possess stable characteristics, making them promising candidates for various device applications in fields like spintronics, thermoelectricity, shape memory, and spin filters. Furthermore, the investigation of their optical properties, including the dielectric function and absorption coefficient, suggests potential implications for optoelectronic applications. Overall, these materials exhibit diverse and valuable properties, opening up exciting opportunities for future technological advancements in multiple domains.

Multiferroic and magnetic characterization of nickel ferrite- barium titanate nanocomposites

Nickel ferrite (NiFe2O4) samples were prepared by the modified sol–gel technique which is an effective, simple, and rapid synthesis method. Multiferroic composites of nickel ferrite and barium titanate (NiFe2O4-BaTiO3) in the ratio 1:1, 1:2, 2:1 as well as composites of nickel zinc ferrite and barium titanate (Ni1-xZnxFe2O4-BaTiO3) in the ratio 2:1 were synthesized by solid-state reaction method. The formation of nickel ferrite and barium titanate heterogeneous composites was identified using X-ray diffraction analysis (XRD). Magnetic properties were studied using vibrating sample magnetometer at 300 K. The coexistence of ferroelectric and ferromagnetic order confirmed through Magneto-electric (ME) coupling measurement.

Electronic Structure of Above-Room-Temperature van der Waals Ferromagnet Fe3GaTe2.

Fe3GaTe2, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature (TC). In this study, we reveal the electronic structure of Fe3GaTe2 in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction (Jex) and magnetic anisotropy energy to the development of the high-TC ferromagnetic ordering in Fe3GaTe2. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-TC ferromagnetic ordering in Fe3GaTe2.

Advancing understanding of structural, electronic, and magnetic properties in 3d-transition-metal TM-doped α-Ga2O3 (TM = V, Cr, Mn, and Fe): A first-principles and Monte Carlo study

In this paper, we investigated the properties of transition metal (TM)-doped α-Ga2O3 using first-principles calculations and Monte Carlo simulations. α-Ga2O3 is a wide-bandgap semiconductor material with enhanced performance and lower fabrication costs on sapphire substrates compared to β-Ga2O3. Doping with TMs can modify electrical transport, optical absorption, and magnetic properties, yet theoretical studies on this are scarce. Our study focused on V, Cr, Mn, and Fe impurities. We introduced a newly proposed scheme for efficiently determining the ground-state defect configuration during structural relaxation. We adopt a recent, novel image charge correction method to accurately calculate formation enthalpy and thermodynamic transition levels for spin-polarized transition metal ion doping, without employing the empirical dielectric constant. Results showed Cr ions tend to neutral substitutional Ga, while V, Mn, and Fe impurity ions tend to carry a negative charge in common n-type α-Ga2O3. Magnetic moments and spin-splitting impurity levels primarily arise from transition metal impurities and their d orbitals. We used the generalized four-state method to calculate exchange interaction constants between substitution lattice sites and identified (anti) ferromagnetic couplings at specific distances in a 120-atom supercell, which are negligible in total energy calculations. Monte Carlo simulations indicated a Curie temperature of 360 K in n-type α-Ga2O3: Mn system with 12.5% doping, suggesting intrinsic ferromagnetic ordering based on the Heisenberg model. Our study contributes to understanding TM-doped α-Ga2O3 electronic structure and magnetic properties through improved methodologies. The approach can be applied in research involving other TM-doped oxides or wide-bandgap semiconductors.

Structural, electrical, and magnetic characteristics of eco-friendly Dy modified BiFeO3 ceramics

The study of basic crystal structure, dielectrics, magnetic and electrical characteristics of a high temperature sintered dysprosium (Dy) substituted bismuth ferrite (BFO) ceramic material, Bi(Fe0.90Dy0.10)O3 (abbreviated as BFDO10) has been reported in this work. The solid-state reaction (SSR) technique is adopted for synthesizing the material. Study of the X-ray diffraction (XRD) data shows an orthorhombic symmetry. The approximate crystallite size is found to be 29 nm. The field emission scanning electron micrograph (FESEM) shows a high density grains of the sample and energy dispersive X-ray micro-analysis (EDXMA) reveals the presence of its basic components. The extensive analysis of the dielectric and electrical properties of the sample was carried out within a frequency from 1 kHz to 1000 kHz and temperature ranges from 25 to 500 °C. A study of the impedance spectroscopy reveals a negative temperature coefficient of resistance (NTCR) behavior and a non-Debye type of dielectric relaxation process of the compound. The ac-conductivity (σac ) of the material follows Jonscher’s universal power law. A study of the electric field polarization confirms the enhancement in remnant polarization and coercive field. The magnetic property shows an enhancement in ferromagnetic orders by virtue of this doping. Moreover, several other interesting features which could be utilized for modern device applications also specified in this article.

Surface‐Sensitive Detection of Magnetic Phase Transition in Van Der Waals Magnet CrSBr

Abstract2D magnets have recently drawn enormous interest. As an air‐stable A‐type van der Waals antiferromagnet (AFM), CrSBr has attracted great attention but has also led to controversies about its large‐span ordering temperatures. Herein, a systematic study of the magnetic phase transition in single‐crystalline CrSBr with ultrahigh‐quality through surface‐sensitive X‐ray magnetic linear dichroism and X‐ray magnetic circular dichroism measurements combined with vibrating sample magnetometry for characterization of bulk magnetization is reported. The interlayer AFM order of both surface and bulk CrSBr is revealed to maintain a similar Néel temperature within the range of 132–142 K. However, the intralayer ferromagnetic (FM) order of surface CrSBr is found to sustain up to ≈238 K, 70 K higher than the value obtained from the bulk CrSBr, demonstrating a dramatically different surface and bulk Curie temperature in CrSBr. Moreover, a half‐filled t2g electronic state for Cr3+ ions with magnetic moment of ≈3 µB/Cr in CrSBr is clearly identified. These results enrich the understanding of the electronic structure and magnetism in CrSBr, providing this material as a promising building block for future spintronic devices.

Fe dopant controlled the ferromagnetic, structural, thermal, optical, and electrical characteristics of CdO nanoparticles

This research paper presents a study on (Fe) doped CdO nanoparticles focusing on their structural (XRD), thermal (TGA and DTA), optical (UV–vis), magnetic (VSM and ESR), and electrical characteristics. The synthesis of Cd1-xFexO with (x = 0.0, 0.01, 0.05, 0.10, 0.15, and 0.20) nanoparticles was carried out using the co– precipitation technique. Fe dopants showed a great impact on the structural parameters and the thermal stabilities of obtained nanomaterials. SEM and TEM imaging techniques are employed to investigate the morphology, size, and distribution of the Cd1-xFexO nanoparticles. UV spectroscopy was employed to better understand the electronic transitions and optical characteristics. Furthermore, magnetization measurements from ESR and VSM showed a weak ferromagnetic order with a high Fe concentration. For instance, the Ac electrical conductivity measurements were used to determine the electrical properties, dielectric losses, and charge transport mechanisms between the Fe-dopants and CdO. The structural, thermal, optical, magnetic, and electrical characteristics data are complemented to better understand for Cd1-xFexO materials for employing them in magnetic storage and sensors, photocatalysis, other future applications.

Controlling the magnetic properties of layered Cr2Te3 thin films via ex-situ annealing

We present a post-growth ex-situ annealing method to control the Curie temperature and magnetic anisotropy of Cr2Te3 van der Waals ferromagnetic thin films. The as-grown Cr2Te3 films exhibit a Curie temperature ∼ 170 K with an out-of-plane magnetic easy axis. Upon high temperature (300 – 400 °C) ex-situ annealing, the magnetic phase of the film changes: the Curie temperature is significantly increased to ∼ 300 K and the magnetic easy axis is reoriented to the in-plane direction. Electronic, chemical, and structural analyses suggest that the c-axis lattice constant expansion, accompanying the annealing process, is the origin of the ex-situ-annealing-induced modulation of the Cr2Te3 film magnetic properties. These results demonstrate that a practical ex-situ annealing process can be effectively used to control the magnetic properties of van der Waals ferromagnetic thin films. Furthermore, the room temperature ferromagnetic ordering emerging upon annealing, along with its robustness against post-growth thermal processes, suggests that the Cr2Te3 thin film is a promising magnetic material candidate for potential application in van-der-Waals-material-based spintronic devices.

First-principles prediction of a two-dimensional semiconductor ferromagnetism in Cr2X2Se6 (X = Al, Ga, In) materials

Based on first-principles calculations, I have predicted the existence of a new class of two-dimensional (2D) transition-metal tri-chalcogenides (TMTCs) materials with the chemical formula Cr2X2Se6 (X = Al, Ga, In). The molecular dynamics and phonon dispersion calculations showed that these materials are thermally and dynamically stable, suggesting that they can be synthesized in the laboratory. Cr2X2Se6 structures are all semiconductors with an indirect bandgap, and the bandgap sizes decrease as the X atom changes from Al to Ga to In. For instance, the bandgaps of Cr2Al2Se6, Cr2Ga2Se6, and Cr2In2Se6 are 1.29, 0.91, and 0.86 eV, respectively. The Cr2X2Se6 monolayer structures exhibit ferromagnetic order and possess an out-of-plane magnetic anisotropy energy (MAE), which increases in magnitude from Al to In along the periodic table. The Curie temperature (Tc) of Cr2X2Se6 monolayers was determined using Monte Carlo simulations based on Heisenberg's model. The Tc exhibited the expected dependence on X atoms. The Cr2X2Se6 monolayers exhibit strong absorption and reflection coefficients in the visible region, with an absorption coefficient of about 105 cm−1. Overall, the discovery and development of new 2D materials with interesting electronic, magnetic, and optical properties offer many opportunities for developing new spintronic and magneto-optical devices that can be used in many different applications.

Mn impurity band and the effects of Mn position in III–V lattice: Pivotal contributions of Władek Walukiewicz to the understanding of ferromagnetism in semiconductors

This paper describes the contributions made by Władysław (Władek) Walukiewicz and his colleagues to the field of ferromagnetic semiconductor (FMS) alloys, such as (Ga,Mn)As. We focus on two key accomplishments. First, this team has predicted the formation of Mn interstitials in these materials, which have a profound effect on ferromagnetism in semiconductors. Additionally, identifying the conditions at which interstitials form has provided grounds for optimizing their ferromagnetic properties. Second, by applying the approach of band anticrossing to ferromagnetic semiconductors, this team has mapped out the properties of an Mn-derived impurity band in these materials. This is of particular importance in the field, because holes, which reside in the Mn-derived impurity band, are the very mechanism responsible for ferromagnetic order in FMSs. We discuss the effect that these accomplishments have on our understanding of FMSs and how they have contributed to progress in this area. We then describe the pathways that these achievements have opened up toward further progress in both basic and applied fronts of ferromagnetism in semiconducting systems; and we present our perspective on where additional work along the lines initiated by Władek Walukiewicz should be extended to further benefit this field.

Ferromagnetic Elements in Two‐Dimensional Materials: 2D Magnets and Beyond

AbstractFerromagnetism in 2D materials has attracted tremendous interest from the scientific community thanks to its potential for the design of magnetic materials with unique properties. The presence of a ferromagnetic element in a 2D material can improve the existing properties and offer new ones, giving rise to the development of manifold applications. This review focuses on recent advances and perspectives of 2D materials that bear at least one ferromagnetic element (iron, cobalt, nickel) as i) structural constituent, ii) dopant atom, or iii) adjacent atom through proximity effect. By describing in detail the magnetic properties that have emerged so far, their potential to form next‐generation 2D magnets is discussed. Moreover, the contribution of such 2D materials is analyzed in various applications (electrochemical, photochemical, optical, and electronic), aiming to explore further functionalities and capabilities of ferromagnetic elements, apart from their magnetic nature. Special attention is given to gadolinium and other rare earth elements that display a ferromagnetic order even at ultra‐low temperatures and form part of 2D structured materials, with particularly appealing properties deriving from their 4f electrons.

DFT calculations for electronic and magnetic properties of full Heusler Fe2MnAs alloy in perfect and defect structures

First-principles calculations within the framework of the density functional theory were conducted using the FP-LAPW method to investigate the electronic and magnetic properties of the Full-Heusler Fe2MnAs alloy. The study encompassed the examination of its perfect structure as well as the variation of lattice constants around the ground state. The negative value of the calculated formation energy suggests that the alloy may form spontaneously. From a magnetic perspective, Fe2MnAs exhibit a ferromagnetic order. The alloy also shows a high spin-polarization that may be increased, transforming the alloy into a half-metal, with the contraction of the lattice constant. Furthermore, the investigation delved into the effect of point defect formation. The calculated formation energies for vacancies, antisite, and exchange defects suggest the likely occurrence of some of these defects within the Fe2MnAs compound. Significantly, certain defects contribute to the spin-polarization of the alloy, effectively rendering it a fully half-metallic material.

Ferromagnetic ordering of magnetic impurities mediated by supercurrents in the presence of spin-orbit coupling

Ferromagnetic ordering of magnetic impurities mediated by supercurrents in the presence of spin-orbit coupling

Selective occupancy of Fe substitution enhance the room-temperature ferromagnetism of (FexNi1-x)2P nanocrystals: Experimental and theoretical studies

Understanding the heteroatoms occupancy in metal phosphides is significant to regulate their properties. (FexNi1-x)2P (0 ≤ x ≤ 0.5) nanocrystals were prepared by thermal decomposition. Effects of Fe substitution on structure, morphology and magnetic properties were studied. As the Fe content increases, (FexNi1-x)2P maintain hexagonal structure with morphologies changing from sphere to irregular sheet. Atomic HAADF-STEM image reveals that the atom configuration matches well with [001] crystallographic orientation. (FexNi1-x)2P nanocrystals show room-temperature ferromagnetism. The Ms values and magnetocrystalline anisotropy are enhanced by increasing Fe substitution. The Ms value of (Fe0·5Ni0.5)2P reaches 2.092 emu/g, 19.5 times larger than Ni2P. XPS and Mössbauer spectra show that Fe2+/Fe3+ selectively occupy tetrahedral and pyramidal positions due to the difference of ionic radius, resulting in enhanced room-temperature ferromagnetism. First-principles calculations show that Fe substitution can induce ferromagnetic ordering in Ni2P, and Fe substitution in pyramidal positions induces larger magnetic moment, further confirming the experimental results.

Nickel doped zinc selenide nanoparticles for spin based dilute magnetic semiconductor applications

For spin based applications, Zn1-xNixSe nanoparticles were synthesised by co-precipitation method at room temperature with various compositions (x = 0.03, 0.05, 0.07, 0.09, 0.1, 0.15, 0.2). Structural and morphological studies of the least explored Zn1-xNixSe nanoparticles have been accomplished with the help of X-ray diffractometer (XRD), Field Emission Scanning Electron (FESEM) and Transmission-Electron Microscopy (TEM) measurement. The nano-crystallite size is obtained in range 11–18 nm with cubic phase of Zn1-xNixSe. Morphological study indicates formation of nanospheres and occurrence of some agglomeration in nanoparticles. Thermogravimetric (TG/DTA) analysis shows the two step degradation process in as prepared undoped ZnSe and Ni doped ZnSe nanoparticles. UV–visible spectroscopy is employed for optical analysis and energy band gap of Ni doped ZnSe nanomaterials is found in range greater than bulk ZnSe (2.8 eV). Fourier Transfom Infrared (FTIR) study confirmed doping of Ni ions in ZnSe nanoparticles. Magnetic properties of Ni-doped ZnSe nanoparticles are investigated using vibrating-sample magnetometer (VSM) at 300 K and electron spin resonance (ESR) spectra and analysis confirms Ni induced ferromagnetism tuning in the prepared samples. Induced ferromagnetic ordering indicates that Ni spins in the doped Zn1-xNixSe can be successfully tuned for static-spins and spin dynamics applications.