Ferromagnetic Metal Layers Research Articles

Thickness dependence on dynamical spin injection driven by thermal effects in CoFeB/Pt bilayer

In ferromagnetic metal (FM)/non-magnetic metal (NM) bilayer structures, dynamical spin injection is primarily attributed to spin pumping at the interface. However, thermal effects, such as the spin (dependent) Seebeck effect (S(d)SE) caused by FMR heating effect, are also expected to contribute, particularly farther from the interface within the FM layer. In this study, the detailed mechanism of dynamical spin injection in CoFeB/Pt bilayer films has been investigated. We demonstrate the proper evaluation of the CoFeB thickness dependence of inverse spin Hall voltage by subtracting the signal from single CoFeB system. The dynamical spin injection and FMR heating effect were observed to significantly depend on thickness. Additionally, we separated the contributions of SSE and SdSE by focusing on their diffusion properties and found that SSE is larger than SdSE in the CoFeB/Pt bilayer film.

Generation of femtosecond spin-polarized current pulses at Fe/MgO interface by quasi-static voltage

The generation of short spin-current pulses is essential for fast spintronic devices. So far, spin current pulses are generated by femtosecond laser pulses which drive spins from a ferromagnetic metal layer. However, the need for miniaturization, simplicity and energy efficiency favour electric-field control of spintronic devices over optic or thermal control. Here, we combine ab initio calculations of electronic density of states at MgO/Fe interface with continuous model for charge transport to investigate the dynamics of the spin-dependent potential. We demonstrate that the voltage-driven instability of the electronic band structure due to the electronic resonant states at the Fe/MgO interface results in the generation of the femtosecond spin-polarized current pulse with the spin polarization up to P=7 00 % that propagates from the interface to the bulk. The dynamics of the current pulses driven by the Stoner instability depends neither on the dielectric relaxation time nor on the details of how the instability is achieved by changing the voltage, i.e. as long as the voltage changes are slow (quasi-static) with respect to the time determined by the spin diffusion constant, being of the order of fs. The presence of the instability can be detected by THz time-domain spectroscopy or pump-probe techniques.

Growth of thin-film magnetic nanostructures promising for spintronics applications

Multilayered metallic nanostructures are promising for the fabrication of spin valves based on the giant magnetoresistive effect and for studies of the nature of topological magnetism, aimed at the development of new nanoscale data storage and transfer devices, e.g. those based on magnetic skyrmions. It is still an important task to develop methods of synthesis and configuration of thin-film nanostructures and control of spin textures in those nanostructures under electric and spin currents generated as a result of the spin Hall effect in external electric fields. Thin-film polycrystalline ferromagnetic / heavy metal Ru(10nm)/Co(0,8)/Ru(2), Ru(10)/Co(0,8)/Ru(2)/W(4), Pt(5)/Co(0,8)/MgO(2)/Pt(2) and Pt(15)/Co(0,8)/MgO(2)/Pt(2) nanostructures have been synthesized using magnetron sputtering. Electric contacts and Hall structures with different conductive bridge thicknesses have been synthesized on the specimens using electron beam photolithography. Experimental vibration magnetometric data have been utilized to calculate magnetic parameters of the specimens, i.e., saturation magnetization, magnetic anisotropy energy and field and coercive force as functions of ferromagnetic and heavy metal layer types. The domain structure of the specimens has been studied using Kerr microscopy. The electrical resistivity has been simulated and the critical current and current density of the nanostructures have been assessed. We show that all the film specimens exhibit perpendicular magnetic anisotropy and can be used in the studies of current-induced phenomena and spin moment transfer processes in nanostructures.

Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet.

All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9×106Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: and heterostructure

We have studied the spin-pumping phenomenon in ferromagnetic metal (FM) ()/topological insulator (TI) () bilayer system to understand magnetization dynamics of FM in contact with a TI. TIs embody a spin–momentum-locked surface state that spans the bulk band gap. Due to this special spin texture of the topological surface state, the spin-charge interconversion efficiency of TI is even higher than that of heavy metals. We evaluated the parameters like effective damping coefficient (), spin-mixing conductance () and spin current density () to demonstrate an efficient spin transfer in heterostructure. To probe the effect of the topological surface state, a systematic low-temperature study is crucial as the surface state of TI dominates at lower temperatures. The exponential increase of for all different thickness combinations of FM/TI bilayers and the enhancement of effective damping coefficient () with lowering temperature confirms that the spin chemical potential bias generated from spin-pumping induces spin current into the TI surface state. Furthermore, low-temperature measurements of effective magnetization () and magnetic anisotropy field (Hk ) showed anomaly around the same temperature region where the resistivity of TI starts showing metallic behavior due to the dominance of conducting TI surface state. The anomaly in Hk can result from the emerging exchange coupling between the TI surface state and the local moments of the FM layer at the interface without any long-range ferromagnetic order in TI at the interface.

Modeling spintronic terahertz emitters as a function of spin generation and diffusion geometry

Spintronic THz emitters (STE) are efficient THz sources constructed using thin heavy-metal (HM) and ferromagnetic-metal (FM) layers. To improve the performance of the STE, different structuring methods (trilayers, stacked bilayers) have been experimentally applied. A theoretical description of the overall THz emission process is necessary to optimize the efficiency of STE. In particular, geometry, composition, pump laser frequency, and spin diffusion will be significant in understanding the pathways for further research developments. This work will apply a generalized model based on a modified Transfer Matrix Method (TMM). We will consider the spin generation and diffusion in the FM and HM layers and explain the spintronic THz emission process. This model is suitable for calculating emitted THz signal as a function of FM and HM thicknesses for different geometrical configurations. We will investigate a bilayer geometry as a test case, but the extension to a multi-layer configuration is straightforward. We will show how the different configurations of the sample will influence the THz emission amplitude.

Space-Charge Control of Magnetism in Ferromagnetic Metals: Coupling Giant Magnitude and Robust Endurance.

Ferromagnetic metals show great prospects in ultralow-power-consumption spintronic devices, due to their high Curie temperature and robust magnetization. However, there is still a lack of reliable solutions for giant and reversible voltage control of magnetism in ferromagnetic metal films. Here, a novel space-charge approach is proposed which allows for achieving a modulation of 30.3 emu/g under 1.3V in Co/TiO2 multilayer granular films. The robust endurance with more than 5000 cycles is demonstrated. Similar phenomena exist in Ni/TiO2 and Fe/TiO2 multilayer granular films, which shows its universality. The magnetic change of 107% in Ni/TiO2 underlines its potential in a voltage-driven ON-OFF magnetism. Such giant and reversible voltage control of magnetism can be ascribed to space-charge effect at the ferromagnetic metals/TiO2 interfaces, in which spin-polarized electrons are injected into the ferromagnetic metal layer with the adsorption of lithium-ions on the TiO2 surface. These results open the door for a promising method to modulate the magnetization in ferromagnetic metals, paving the way toward the development of ionic-magnetic-electric coupled applications.

Atomic‐Scale Modulation of Synthetic Magnetic Order in Oxide Superlattices

Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit Ruderman-Kittel-Kasuya-Yosida interaction through a nonmagnetic metallic spacer; however, they face issues arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer will lead to the development of spin-related devices with a completely different concept. Herein, the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers is reported. The atomically controlled superlattice exhibits an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state can move the field one step further to actual spintronic applications.

Pollen‐Based Magnetic Microrobots are Mediated by Electrostatic Forces to Attract, Manipulate, and Kill Cancer Cells

AbstractNaturally occurring micro/nanoparticles provide an incredible array of potential sources when preparing hybrid micro/nanorobots and their intrinsic properties can be exploited as multitasking functionalities of modern robotics as well as ensuring their mass production availability. Herein, magnetic biological bots (BioBots) prepared from defatted sunflower pollen microparticles by ferromagnetic metal layer evaporation on one side of its surface are described. It is demonstrated that the methodology employed introduces magnetic properties to sunflower pollen microparticles‐based BioBots and enable their magnetic actuation. Interestingly, as‐prepared magnetic sunflower pollen‐based BioBots can naturally attract cancer cells due to their opposite charges (positive and negative, respectively). Such attracted cancer cells can then be transported by microrobots. This strong attraction also allows the delivery of drugs intended to kill the cancer cells. Sunflower‐based BioBots can be fabricated in large quantities, and are naturally programmable, making them promising candidates for cancer cell therapy.

About electron transport and spin control in semiconductor devices

As the scaling of CMOS-based technology displays signs of an imminent saturation, employing the second intrinsic electron characteristics – the electron spin – is attractive to further boost the performance of integrated circuits and to introduce new computational paradigms. A single electron spin forms a qubit and is suitable for quantum applications. In digital applications, the spin promises to offer an additional functionality to charge-based CMOS circuitry. Recently, spin injection into a semiconductor and spin manipulation by the gate voltage were successfully demonstrated providing a vision that devices using spin in addition to charge may appear in significant numbers on the market in the non-distant future.On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin–orbit torque (SOT) magnetoresistive random access memories (MRAMs) are already competing with flash memory and SRAM for embedded applications. A combination of nonvolatile elements with CMOS circuitry allows to shift the data processing into the nonvolatile segment, paving the way for a novel low power computational paradigm based on logic-in-memory and in-memory computing architectures.To model MRAM, we innovatively extend the spin and charge transport equations to multi-layered structures consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by modeling the magnetization dynamics in ultra-scaled MRAM cells.

Magneto-optical measurements of mesoscopic Nb superconducting structures using a ferromagnetic metal indicator layer

Imaging local magnetic fields produced by nano- and micrometer-scale superconductors has become a vital tool that can not only reveal crucial information on the vortex dynamics and order parameters of the superconducting materials but also visualize the working mechanism of superconducting devices made for quantum information. Here, we performed measurements of the magnetic field distributions of mesoscopic superconducting structures with various geometries by combining a thin ferromagnetic metal layer as a magneto-optical sensing element that responds to the environmental magnetic fields and a custom-made sensitive Sagnac interferometer. The sensitivity of the technique enables the observation of magnetic flux jumps due to individual vortex entries into nanostructured superconductors. In addition, with the control of incident power at a focused laser spot, we induce thermally driven movement of vortices that leaves a trace of a microscopic optical heating pattern.

Comprehensive Study of the Current-Induced Spin-Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers.

The spin–orbit torques (SOTs) in the heavy metal (HM)/ferromagnetic metal (FM) structure hold promise for next-generation low-power and high-density spintronic memory and logic applications. For the SOT switching of a perpendicular magnetization, an external magnetic field is inevitable for breaking the mirror symmetry, which is not practical for high-density nanoelectronics applications. In this work, we study the current-induced field-free SOT switching and SOT perpendicular effective field () in a variety of laterally asymmetric multilayers, where the asymmetry is introduced by growing the FM layer in a wedge shape. We show that the design of structural asymmetry by wedging the FM layer is a universal scheme for realizing field-free SOT switching. Moreover, by comparing the FM layer thickness dependence of () in different samples, we show that the efficiency (β = /J, J is the current density) is sensitive to the HM/FM interface and the FM layer thickness. The sign of β for thin FM thicknesses is related to the spin Hall angle (θSH) of the HM layer attached to the FM layer. β changes its sign with the thickness of the FM layer increasing, which may be caused by the thickness dependence of the work function of FM. These results show the possibility of engineering the deterministic field-free switching by combining the symmetry breaking and the materials design of the HM/FM interface.

Enhancement of spin–orbit torques by change in uniaxial in-plane magnetic anisotropy of Py/Pt bilayers on single crystal 128° Y-Cut LiNbO3 substrate

We have investigated the correlations between the in-plane uniaxial magnetic anisotropy (Ku) and spin–orbit torque (SOT) of Ni80Fe20 (Py)/Pt thin films sputtered on a single-crystal 128° Y-Cut LiNbO3 (LNO) substrate by performing second-harmonic voltage measurements. The results show that the value of the damping-like (DL) SOT torque varies with the angle χ between Ku and the applied current and increases with χ from 0° to 90°. The effective spin Hall angle θSH, Pteff = 0.073 and 0.123 for χ = 0 and 90°, respectively, indicate a difference of approximately 1.7 times. The θSH,Pteff at χ = 90° is greater because the direction of the DL-SOT on the magnetization is the same as the Ku direction. This result implies that the effective spin Hall angle can be controlled by the Ku direction of the ferromagnetic metal layer induced on the LNO substrate, thereby providing valuable insight for the development of spin devices using SOT.

Separation of emission mechanisms in spintronic terahertz emitters

Spintronic thin films were shown to be promising high-performance broadband terahertz (THz) emitters. For spintronic ferromagnet/heavy metal heterostructures, THz emission arises from three mechanisms: the magnetic dipolar radiation due to the ultrafast demagnetization, the transient current radiation due to spin-charge conversion, and anomalous Hall effect. Here, we demonstrate that the three mechanisms show distinct dependences on the thickness of the ferromagnetic layer. With the insertion of an ultrathin ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ layer between the ferromagnetic and heavy metal layer, the spin-charge conversion is suppressed when the ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ thickness exceeds 1 nm. Our results agree with the theoretical predictions based on a simple spin-diffusion model.

Interface Driven Effects in Magnetization-Induced Optical Second Harmonic Generation in Layered Films Composed of Ferromagnetic and Heavy Metals.

Properties of nanolayers can substantially differ from those of bulky materials, in part due to pronounced interface effects. It is known that combinations of layers of heavy and ferromagnetic metals leads to the appearance of specific spin textures induced by interface-induced Dzyaloshinskyi–Moria interaction (DMI), which attracts much interest and requires further studies. In this paper, we study magneto-optical effects in two- and three-layer films composed of a few nanometer thick Co layer adjacent to nanofilms of non-magnetic materials (Pt, W, Cu, Ta, MgO). For experimental studies of the interface magnetization-induced effects, we used the optical second harmonic generation (SHG) technique known for its high sensitivity to the symmetry breaking. We found that the structural asymmetry leads to the increase of the averaged SHG intensity, as well as to the magnetic field-induced effects in SHG. Moreover, by choosing the proper geometry of the experiment, we excluded the most studied linear in magnetization SHG contributions and, thus, succeeded in studying higher order in magnetization and non-local magnetic effects. We revealed odd in magnetization SHG effects consistent with the phenomenological description involving inhomogeneous (gradient) magnetization distribution at interfaces and found them quite pronounced, so that they should be necessarily taken into account when analyzing the non-linear magneto-optical response of nanostructures.

Electron-Phonon Coupling Parameter of Ferromagnetic Metal Fe and Co.

The electron-phonon coupling (g) parameter plays a critical role in the ultrafast transport of heat, charge, and spin in metallic materials. However, the exact determination of the g parameter is challenging because of the complicated process during the non-equilibrium state. In this study, we investigate the g parameters of ferromagnetic 3d transition metal (FM) layers, Fe and Co, using time-domain thermoreflectance. We measure a transient increase in temperature of Au in an FM/Au bilayer; the Au layer efficiently detects the strong heat flow during the non-equilibrium between electrons and phonons in FM. The g parameter of the FM is determined by analyzing the temperature dynamics using thermal circuit modeling. The determined g values are 8.8–9.4 × 1017 W m−3 K−1 for Fe and 9.6–12.2 × 1017 W m−3 K−1 for Co. Our results demonstrate that all 3d transition FMs have a similar g value, in the order of 1018 W m−3 K−1.

Low-Temperature Tunneling Electroresistance in Ferromagnetic Metal/Ferroelectric/Semiconductor Tunnel Junctions.

Ferroelectric tunnel junctions (FTJs) as artificial synaptic devices are promising candidates for the building block of nonvolatile data storage devices. However, a small ON/OFF ratio of FTJs limits their application in low-temperature operations. In this work, the influence of quantum interference effects on tunneling electroresistance in the La0.7Sr0.3MnO3/BaTiO3/Nb:SrTiO3 (ferromagnetic metal/ferroelectric/semiconductor) FTJ at low temperatures is investigated. The Current-voltage curves are observed in the tunnel junction from 300 to 10 K with a six-unit-cell thick BaTiO3 film by the ferroelectric polarization effect. First, the ON/OFF current ratio increases from 300 to 30 K due to the increase of polarization in the ferroelectric barrier, and then, it gradually decreases when the temperature drops below 30 K. An anomalous ON/OFF current ratio of ∼105 is obtained at 30 K. The low-temperature tunneling properties in the FTJ are associated with a low-temperature resistivity minimum in the ferromagnetic metal layer by the electron-electron interaction, which increases the La0.7Sr0.3MnO3/BaTiO3 interface resistance, leading to a higher resistance state and lower IOFF for the OFF state. As a result, the ON/OFF current ratio is abruptly enhanced at 30 K. Our results emphasize the crucial role of transport properties of La0.7Sr0.3MnO3 in FTJs and pave the way for the design and application of FTJs at low temperatures.

Giant Magnetoresistance and Magneto-Thermopower in 3D Interconnected NixFe1-x/Cu Multilayered Nanowire Networks.

The versatility of the template-assisted electrodeposition technique to fabricate complex three-dimensional networks made of interconnected nanowires allows one to easily stack ferromagnetic and non-magnetic metallic layers along the nanowire axis. This leads to the fabrication of unique multilayered nanowire network films showing giant magnetoresistance effect in the current-perpendicular-to-plane configuration that can be reliably measured along the macroscopic in-plane direction of the films. Moreover, the system also enables reliable measurements of the analogous magneto-thermoelectric properties of the multilayered nanowire networks. Here, three-dimensional interconnected NiFe/Cu multilayered nanowire networks (with ) are fabricated and characterized, leading to large magnetoresistance and magneto-thermopower ratios up to 17% and −25% in NiFe/Cu, respectively. A strong contrast is observed between the amplitudes of magnetoresistance and magneto-thermoelectric effects depending on the Ni content of the NiFe alloys. In particular, for the highest Ni concentrations, a strong increase in the magneto-thermoelectric effect is observed, more than a factor of 7 larger than the magnetoresistive effect for NiFe/Cu multilayers. This sharp increase is mainly due to an increase in the spin-dependent Seebeck coefficient from −7 µV/K for the NiFe/Cu and NiFe/Cu nanowire arrays to −21 µV/K for the NiFe/Cu nanowire array. The enhancement of the magneto-thermoelectric effect for multilayered nanowire networks based on dilute Ni alloys is promising for obtaining a flexible magnetic switch for thermoelectric generation for potential applications in heat management or logic devices using thermal energy.

Soft Tooling-Friendly Inductive Mold Heating-A Novel Concept.

In order to economize injection molded prototypes, additive manufacturing of, e.g., curable plastics based tools, can be employed, which is known as soft tooling. However, one disadvantage of such tools is that the variothermal process, which is needed to produce polymeric parts with small features, can lead to a shorter lifespan of the tooling due to its thermally impaired material properties. Here, a novel concept is proposed, which allows to locally heat the mold cavity via induction to circumvent the thermal impairment of the tooling material. The developed fabrication process consists of additive manufacturing of the tooling, PVD coating the mold cavity with an adhesion promoting layer and a seed layer, electroplating of a ferromagnetic metal layer, and finally patterning the metal layer via laser ablation to enhance the quality and efficiency of the energy transfer as well as the longevity by geometric measures. This process chain is investigated on 2D test specimens to find suitable fabrication parameters, backed by adhesion tests as well as environmental and induction tests. The results of these investigations serve as proof of concept and form the base for the investigation of such induction layers in actual soft tooling cavities.

Quantifying Power Flow Processes Mediated by Spin Currents

The power flow process mediated by spin current in the bilayer device consisting of ferromagnetic metal (FM) and nonmagnetic metal (NM) layers is examined by realizing experimental evaluations for ...