Starting from the Kane-Mele Hamiltonian, Dirac cone approximation and self-consistent Born approximation (SCBA), the effects of dilute charged impurity doping on electronic heat capacity (EHC) and magnetic susceptibility (MS) of a two-dimensional material ferromagnetic graphene’s silicon analog, silicene, are investigated within the Green’s function approach that allows the accurate assessment of dynamic of carriers. Also, we have studied the behavior of these quantities in the presence of applied external electric field (AEEF). Our results show that the inversion symmetry is broken by impurity doping. According to EHC behaviors, the band gap is decreased with impurity concentration (IC), impurity scattering strenght (ISS), and AEEF. As a remarkable point, a phase transition from ferromagnetic to paramagnetic and antiferromagnetic has been observed. On the other hand, there is a critical impurity concentration for maximum response to the temperature and magnetic field. The effect of AEEF leads to the decrease of band gap and phase transition depends on the direction of AEEF.