Ferroelectric Hysteresis Loops Research Articles

A study on BaTiO3 – NiFe2O4 composite; microstructure, multiferroic and magnetodielectric properties

The lead-free x NiFe2O4 – (1-x) BaTiO3 (x = 0, 0.05, 0.1, 0.15) multiferroic composites were prepared via the solid-state sintering technique. Microstructure, multiferroic, and magnetodielectric properties of composites were investigated. According to the XRD data (from x = 5 to 15 wt%), the tetragonality factor (cT/aT) and unit cell volume of the BaTiO3 (BTO) crystal system diminished. Based on SEM images, ferromagnetic NiFe2O4 (NFO) grains are uniformly dispersed in the ferroelectric BTO matrix without additional reaction in the interfaces of two phases. The highest values of dielectric (dielectric constant (εr) ∼ 1905 and dielectric loss factor (tan δ) ∼ 0.049) and ferroelectric properties (saturation polarization (PS) ∼ 13 μC/cm2 and remnant polarization (Pr) ∼ 10 μC/cm2) are attained for x = 5 wt% due to the lowest NFO (non-ferroelectric) concentration. Also, with increasing ferrite concentration (up to 15 wt%), the ferroelectric properties of the composites show a gradual decrease. The saturation magnetization (MS) values rise due to increasing ferrite concentration (from 2 to 5 emu/g for x = 5 to 15 wt%). Moreover, coercivity (HC) drops from 150 to 110 Oe. The simultaneous observation of the ferroelectric and ferromagnetic characteristic hysteresis loops confirmed the multiferroic effect for x = 5, 10, and 15 wt%. The highest magnetodielectric constant (3 %) is obtained for x = 15 wt% multiferroic composite at the applied magnetic field of 6 kOe.

Effect of unsaturated or saturated ferroelectric polarization on electrocaloric effect

The pursuit of high-efficiency and zero-emission refrigeration technologies has spurred interest in electrocaloric (EC) refrigeration utilizing ferroelectric (FE) materials, where accurate characterization of the EC effect is crucial for comprehending its underlying physical mechanisms and for developing high-performance EC materials. In this study, we investigate the influence of unsaturated vs saturated FE polarization characteristics on EC effects using Pb0.99Nb0.02[(Zr0.6Sn0.4)0.85Ti0.15]0.98O3 ceramics. Direct EC measurement reveals that unsaturated loops can introduce substantial errors and even fake negative EC effects when employing the Maxwell approach for indirect EC measurement. In contrast, relatively accurate indirect EC results can be obtained using saturated FE hysteresis loops. Furthermore, it also highlights the necessity for saturated polarization conditions to achieve optimal EC performance in FEs. This work not only emphasizes the importance of carefully selecting polarization data for indirect EC measurements, but also presents a universal strategy to enhance EC effects in various materials.

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of-plane ferroelectric polarization in trilayer NiI2 device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

Above-Room-Temperature Ferroelectricity and Giant Second Harmonic Generation in 1D vdW NbOI3.

The realization of spontaneous ferroelectricity down to the one-dimensional (1D) limit is both fundamentally intriguing and practically appealing for high-density ferroelectric and nonlinear photonics. However, the 1D vdW ferroelectric materials are not discovered experimentally yet. Here, the first 1D vdW ferroelectric compound NbOI3 with a high Curie temperature TC>450K and giant second harmonic generation (SHG) is reported. The 1D crystalline chain structure of the NbOI3 is revealed by cryo-electron microscopy, whereas the 1D ferroelectric order originated from the Nb displacement along the Nb-O chain (b-axis) is confirmed via obvious electrical and ferroelectric hysteresis loops. Impressively, NbOI3 exhibits a giant SHG susceptibility up to 1572pmV-1 at a fundamental wavelength of 810nm, and a further enhanced SHG susceptibility of 5582pmV-1 under the applied hydrostatic pressure of 2.06GPa. Combing in situ pressure-dependent X-ray diffraction, Raman spectra measurements, and first-principles calculations, it is demonstrated that the O atoms shift along the Nb─O atomic chain under compression, which can lead to the increased Baur distortion of [NbO2I4] octahedra, and hence induces the enhancement of SHG. This work provides a 1D vdW ferroelectric system for developing novel ferroelectronic and photonic devices.

Multiferroic properties and local ferroelectricity of polycrystalline LuFeO3 thin films with triangular grains on glass substrates

Polycrystalline LuFeO3 (LFO) thin films were prepared on multilayer Pt/Ta/glass substrates. The ferroelectric hysteresis loop of the LFO thin film exhibited a remanent polarization of about 5.7 μC/cm2. The ferroelectric hysteresis loop of the LFO thin film deposited at a relatively slow rate provides valuable information about its recoverable energy density (8.8 J/cm3) and loss energy density (9.3 J/cm3), resulting in an estimated energy storage efficiency of around 49%. The LFO thin film had triangular grains with a diameter of approximately 90 nm, which well reflects the crystallinity of hexagonal LFO. From the local piezoelectric d33 hysteresis loops of a triangular grain, it was confirmed that the edge of a triangular grain had a remanent d33 value larger than the center of a triangular grain. Additionally, a mosaic domain structure of the LFO thin film was well correlated with the AFM image. By applying the Landau, Lifshitz, and Kittel (LLK) scaling law, it was confirmed that the LFO thin films have a domain wall energy lower than that of PbTiO3 thin films.

Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

For the in-memory computation architecture, a ferroelectric semiconductor field-effect transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic and memory in a single device. The emerging group III nitride material Al1−xScxN provides an excellent platform to explore FeSFET, as this material has significant electric polarization, ferroelectric switching, and high carrier mobility. However, steps need to be taken to reduce the large band gap of ∼5 eV of Al1−xScxN to improve its transport property for in-memory logic applications. By state-of-the-art first principles analysis, here we predict that alloying a relatively small amount (less than ∼5%) of Sb impurities into Al1−xScxN very effectively reduces the band gap while maintaining excellent ferroelectricity. We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of ∼1.76 eV and a large polarization parameter ∼0.87 C/m2, in the quaternary Al1−xScxSbyN1−y compounds. The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport. Based on the Landau-Khalatnikov model, the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds. These findings indicate that Al1−xScxSbyN1−y is an excellent candidate as the channel material of FeSFET.

A Comprehensive Comparison of the Structural, Ferroelectric, Energy Storage, and Photocatalytic Properties of Chemical Composition-Tailored Perovskite Ceramics

This article reports on the structural, ferroelectric, energy density, and photocatalytic properties of (Pb0.50Ba0.35Ca0.15)(Fe0.25Nb0.25Ti0.50)O3 [PBCTO] and (Pb0.50Ba0.50)(Fe0.25Nb0.25Zr0.1Ti0.40)O3 [PBZTO] ceramics synthesized by the solid synthesis route. X-ray diffraction and Raman spectra confirmed peaks corresponding to perovskite crystalline structure with tetragonal phase for both PBCTO and PBZTO ceramics. Slim ferroelectric hysteresis was observed in polarization-electric field measurements. Remnant polarization (Pr), and coercive field (Ec) values are ∼3.63 μC cm−2, ∼25.4 kV cm−1, and ∼1.39 μC cm−2 and 17.9 kV cm−1 for PBCTO and PBZTO, respectively. Energy densities were obtained from ferroelectric hysteresis loops. For PBCTO ceramics, the largest unreleased energy density is 0.72 J cm−3 @ 200 kV cm−1; for PBZTO ceramics, the largest unreleased energy density is 0.60 J cm−3 @200 kV cm−1. Photocatalytic performance was studied on methylene blue (MB) and methyl orange (MO) dyes under visible irradiation. The degradation percentage of MB dye in the presence of PBCTO and PBZTO was found to be 56% and 98% in 80 min with irradiation. The degradation percentage of MO dye in the presence of PBCTO and PBZTO at their respective wavelength was 48% and 97% in 120 min with irradiation. These bulk ceramics under study have shown interesting multifunctional properties useful for various potential applications.

Effects of doping with magnetic cations on the hybrid improper ferroelectricity in Sr3Sn2O7

We here report the structural, magnetic and electrical properties of Sr2.9La0.1Sn1.9M0.1O7 (M= Cr, Mn or Fe) compounds. This La/M codoping of the hybrid improper ferroelectric Sr3Sn2O7, allows introducing magnetic cations into the perovskite layers of this Ruddlesden-Popper phase. The doping induces minor structural changes, preserving the polar structure with space group A21am of the undoped compound. The perovskite tolerance factor of all doped samples is slightly lower than in Sr3Sn2O7, which preserves the tilts and rotations of SnO6 octahedra. Doped samples exhibit a paramagnetic behavior down to 5 K and obey the Curie-Weiss law above 200 K. The effective paramagnetic moments agree with the expected spin-only values of the respective magnetic M3+ cations. All samples show a ferroelectric hysteresis loop at room temperature, but the doped samples show larger coercive fields. Additionally, the doping with magnetic cations has important effects on the dielectric properties: a strong decrease of the temperature of the ferroelectric transition together with a smoothing of the anomaly in the dielectric permittivity. These results suggest that the disorder produced by the two aliovalent substitutions is detrimental for the ferroelectric properties due to point charge defects but, at the same time, the prevalence of the structural distortion (tilts and rotations) preserves the ferroelectricity in the investigated doping regime.

Negative slope polarization in ferroelectric hysteresis loop engineered by defect dipoles

The power dissipation in conventional microelectronic devices is facing a fundamental barrier of Boltzmann Tyranny. The negative capacitance (NC) effect in ferroelectric materials provides possible solution to overcome this impending problem and gets a lot of attention. Here we report a novel method to design negative capacitance in ferroelectrics by the introduction of defect-dipole engineering. In the molecular dynamics simulations of a first principles-based effective Hamiltonian, an abnormal polarization with negative slope and corresponding differential capacitance are observed in the polarization-electric field (P-E) hysteresis loops when the applied electric field is perpendicular to the direction of the defect dipoles in acceptor-doped BaTiO3 single crystals. This phenomenon is attributed to the fact that the polarization overshoots, oscillates and finally gradually switches to the direction of defect dipoles by their restoring forces during the polarization switching near the coercive field. The P-E loop exhibits abnormal NC response only at a certain range of defect levels, and there are double loops at high level and typical square-shaped loops at low level. Moreover, in the experiments of poled 1 mol.% Mn-doped BaTiO3 ceramics, the abnormal negative slope polarization in P-E loops is confirmed, which are in good agreement with the simulation results.

Enhancement of ferroelectric properties of the Ga0.6Fe1.4O3 films by Zn,N co-doping

Multiferroic materials have attracted considerable interests due to their scientific and technological importance in advanced devices. Ga0.6Fe1.4O3 thin film exhibits ferrimagnetism above room temperature but suffers from large leakage current. To reduce the charge conduction and enhance the ferroelectric properties of Ga0.6Fe1.4O3 film, ion doping is a useful technique. In this study, we fabricated Ga0.6Fe1.4-xZnxO3/N films by substituting Zn2+ and N3- ions in Ga0.6Fe1.4O3 for Fe and O, respectively. The influence of Zn, N co-doping on the structure, leakage current, magnetic and ferroelectric properties of the films were investigated. The results indicated that the films exhibited the orthorhombic structure with the incorporation of Zn and N. All Ga0.6Fe1.4-xZnxO3/N films showed above room temperature ferrimagnetism, and the magnetization and transition temperature values decreased with Zn,N co-doping. The microscopic and macroscopic ferroelectric measurements have demonstrated the ferroelectric polarization switching of the films. The ferroelectric hysteresis loops of the Ga0.6Fe1.38Zn0.02O3/N film showed the remnant polarization of ∼0.46 μC/cm2 with the coercive field of ±2 V at room temperature. The leakage current significantly reduced from ∼3.27×10−1 A/cm2 for pure Ga0.6Fe1.4O3 film to ∼1.48×10−5 A/cm2 for Ga0.6Fe1.35Zn0.05O3/N film, by four orders of magnitude. This may be attributed to the incorporation of Zn2+ and N3-, providing charge compensation to valence fluctuations of Fe between Fe3+ and Fe2+. These results provide an effective method to improve the ferroelectricity of Ga0.6Fe1.4O3 film, and open a wide perspective for the potential application in magnetoelectric devices.

Impedance spectroscopy and electrical conductivity of 0.7Bi(1−x)NdxFeO3–0.3BaTiO3 ferroelectric ceramics

0.7Bi[Formula: see text]NdxFeO3–0.3BaTiO3 (BNFO–BTO, [Formula: see text], 0.010, 0.020 and 0.050) ceramics were fabricated using the high-temperature solid-state reaction method. The X-ray diffraction (XRD) patterns revealed that the primary phase in these ceramics was pseudocubic. The Scanning Electron Microscopy (SEM) micrographs exhibited dense microstructures throughout all BNFO–BTO ceramics. Furthermore, the temperature dependence of dielectric behaviors and ferroelectric hysteresis loop shapes suggested the occurrence of a relaxor ferroelectric-type phase transition in BNFO–BTO ceramics. Additionally, the frequency dispersion characteristics and remnant polarization were enhanced with increasing substitution of Bi[Formula: see text] by Nd[Formula: see text]. Conducted impedance analysis on 0.7Bi[Formula: see text]NdxFeO3–0.3BaTiO3 ceramics and two dielectric responses of the grain at high frequency and grain boundary at low frequency were illustrated, respectively. The combination of imaginary impedance ([Formula: see text] and imaginary modulus ([Formula: see text] versus log[Formula: see text]f plots revealed that the charge carriers’ motion was not entirely long-range, short-range migration also exists. Through calculations based on Curie–Weiss Law, the relaxation activation energy ([Formula: see text] and conductance activation energy ([Formula: see text] were investigated, confirming that doping Nd[Formula: see text] effectively mitigates the concentration of oxygen vacancies (OVs) and prevents the formation of oxygen vacancies clusters, ultimately suppressing conductivity in BNFO–BTO ceramics.

Chromium‐substituted bismuth titanate–niobate exhibiting superior piezoelectric performance for high‐temperature applications

AbstractHigh‐temperature piezoelectric ceramics with excellent piezoelectric properties are key materials for high‐temperature piezoelectric devices. In this context, bismuth titanate–niobate (Bi3TiNbO9) is one of the most promising candidates, owing to its high Curie temperature (TC) > 900°C. However, the relatively low piezoelectric response of prototype Bi3TiNbO9 does not satisfy the requirements of high‐precision and high‐sensitivity applications. Herein, chromium‐substituted Bi3TiNbO9 with a nominal composition, Bi3Ti1−xCrxNbO9 (BTN‐100xCr), was prepared using the solid‐state reaction method. Raman spectroscopy and X‐ray diffraction refinements revealed structural distortions induced by the substitution of chromium. Piezo‐response force microscopy and ferroelectric hysteresis loops showed facile polarization reversal and domain wall movement in chromium‐substituted Bi3TiNbO9. The resultant structural distortion and domain wall movement served as intrinsic and extrinsic contributions to the enhancement of the piezoelectric properties, respectively. Consequently, BTN‐1.5Cr exhibits a high piezoelectric constant (d33) of 17.7 pC/N, which is four times that of Bi3TiNbO9 (4.2 pC/N), a high TC of 908°C, and an excellent thermal stability of piezoelectric and electromechanical coupling properties up to 500°C. These results indicate that chromium substitution enhances the high‐temperature piezoelectric properties of Bi3TiNbO9, and chromium‐substituted Bi3TiNbO9 is a promising candidate for high‐temperature piezoelectric applications.

Characterization of polycrystalline BiFeO3 films prepared by magnetic-field-assisted 90° off-axis pulsed laser deposition

Polycrystalline BiFeO3 (BFO) films were prepared on a Pt/TiO2/SiO2/Si substate using magnetic field-assisted 90° off-axis pulsed laser deposition (PLD). We have successfully obtained polycrystalline BFO films owing to a high deposition rate derived by the confinement of the plume under a magnetic field. The obtained polycrystalline BFO films have a droplet-free surface morphology and a columnar-like microstructure. A RT ferroelectric hysteresis loop is obtained, and at the same time, the remanent polarization of 90 μC cm−2 and the reduced coercive field of 178 kV cm−1 are confirmed. Also, an evolution of the polarization switching is observed by the piezoresponse force microscopy. In this study, we provide a possible route to realize the polycrystalline film growth which has a good quality in a 90° off-axis deposition system using magnetic field-assisted PLD.

Sintering-induced multiferroicity in 0.93(Na0.5Bi0.5)TiO3–0.07BaTiO3 ceramics

Two 0.93(Na[Formula: see text]Bi[Formula: see text]TiO3–0.07BaTiO3 ceramics were sintered for 2[Formula: see text]h and 3 h, respectively, by a conventional solid reaction method. The ceramic sintered for 2[Formula: see text]h showed a normal ferroelectric hysteresis loop and paramagnetic behavior, while the ceramic sintered for 3[Formula: see text]h showed a pinched ferroelectric hysteresis loop, weak ferromagnetism, and enhanced magnetoelectric coupling. The origins of the sintering time-related multiferroic properties are discussed in detail. The work offers a new way to induce multiferroicity in ceramics by tuning sintering time.

Strong magnetodielectric effect in Bi(La)Fe(Cr)O3 multiferroic nanomaterials

The Bi1-xLaxFe1-yCryO3 (x = 0.00, 0.06; y = 0.00, 0.03, 0.06, 0.09, 0.12) nanomaterials have been synthesized using the simple solvo-thermal technique. The Rietveld refinement of XRD analysis using FullProf Software confirms that all synthesized materials follow rhombohedral perovskite crystal structure of R3C space group. The dielectric and ac conductivity data are analyzed to understand the role of grain and grain boundary contributions. The enhancement of magnetic properties has been observed from SQUID measurement for the co-doped samples at room temperature. Also, a significant improvement in polarization has been observed for the doped nanocompounds from the ferroelectric hysteresis loop. The magneto-dielectric study reveals a large improvement in our co-doped BFO nanomaterials and the value is nearly three times of those reported earlier. The calculated energy storage efficiency for the co-doped samples are found to have as high as 51 %. The sample with x = 0.06 and y = 0.09 with a magneto dielectric coefficient of around 30 % and energy storage efficiency of 35 % is the most suitable for both spintronic and energy storage devices.

Enhanced energy storage performance in Bi4Ti3O12 thin films with oxygen depletion layers

The imprint effect in ferroelectric materials can significantly enhance the performance of energy storage devices. Bi4Ti3O12 (BTO) and oxygen-deficient Bi4Ti3O11.2 (DBTO) thin films were deposited on single-crystal Nb-doped SrTiO3 substrates using pulsed laser deposition. In stark contrast, multilayer DBTO/BTO thin films incorporating an oxygen-deficient layer were also fabricated, with the DBTO layers having thicknesses of 5 nm and 10 nm, respectively. Both BTO and DBTO thin films exhibited epitaxial growth and c-axis-oriented crystallinity. Regarding ferroelectric properties, DBTO/BTO capacitors with an oxygen-deficient layer demonstrated a pronounced imprint effect in their ferroelectric hysteresis loops, compared to the BTO and DBTO capacitors. This effect was particularly noticeable in the DBTO/BTO capacitor with a 10 nm oxygen-deficient layer, as opposed to the thin film with a 5 nm oxygen-deficient layer. We suggest that the imprint effect can be attributed to localized electric field variations and imbalances in charge transport at the interface between the oxygen-depleted layer and the remaining thin film. Consequently, the imprint effect observed in the DBTO/BTO capacitors contributed to an enhancement in energy storage density and efficiency, compared to BTO and DBTO capacitors. This study demonstrates the potential of multilayer DBTO/BTO thin films in advancing capacitive energy storage systems.

Energy storage properties influenced by relaxor ferroelectric properties dependent on the growth direction of epitaxial Bi2SiO5 thin films

Ferroelectric Bi2SiO5 (BSO) thin films were deposited by pulsed laser deposition on Nb-doped (100), (110) and (111) SrTiO3 (Nb:STO) substrates, resulting in (001)-, (113)- and (204)-oriented epitaxial films. Due to the crystallinity of BSO, in which the Bi2O2 layers are formed perpendicular to the c-axis direction, the (001)-oriented epitaxial BSO thin film showed the lowest remanent polarization and the best leakage current characteristics. On the other hand, the (113)- and (204)-oriented films showed an increase in remanent polarization due to the improvement of a-oriented crystallinity. Through experiments using vertical and lateral piezoresponse force microscopy, it has been confirmed that the distribution of in-plane-oriented domains reducing remanent polarization decreases in the order of (001)-, (113)- and (204)-oriented epitaxial BSO thin films. The epitaxial BSO thin films that exhibit ferroelectric hysteresis loops similar to the relaxor ferroelectric thin films tended to have improved energy storage characteristics as a result of improved remanent polarization and saturation polarization. In particular, the (113)-oriented epitaxial BSO thin film showed a high recoverable energy density of about 41.6 J cm−3 and an energy storage efficiency of about 85.6%.

On the Lanthanide Effect on Functional Properties of 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 Ceramic.

The beneficial effects of lanthanide incorporation into 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 (BNT-BT) matrix on its functional properties were investigated. The conventional solid-state method was used for synthesizing samples. The structural refinement revealed that all samples crystallized in R3c rhombohedral symmetry. Raman spectroscopy study was carried out using green laser excitation and revealed that no clear perceptible variation in frequency is observed. Dielectric measurements unveiled that the introduction of rare earth obstructed the depolarization temperature promoted in BNT-BT, the diffusive phase transition decreasing with increasing lanthanide size. Only dysprosium addition showed comparable diffusion constant and dielectric behavior as the unmodified composition. Further, the comparison of the obtained ferroelectric hysteresis and strain-electric field loops revealed that only Dy-phase exhibited interesting properties comparing parent composition. In addition, the incorporation of lanthanides Ln3+ into the BNT-BT matrix led to the development of luminescence characteristics in the visible and near infrared regions, depending on the excitation wavelengths. The simultaneous occurrence of photoluminescence and ferroelectric/piezoelectric properties opens up possibilities for BNT-BT-Ln to exhibit multifunctionality in a wide range of applications.

Electromechanical and ferroelectric hysteresis in dense and porous PZT-type piezoceramics

In the present study, particular aspects of the large-signal switching properties and electromechanical hysteresis of the lead zirconate titanate (PZT)-type porous piezoceramics were studied in comparison with the dense piezoceramics of the same composition. Large-signal ferroelectric polarization and strain hysteresis loops were recorded at the bipolar electric fields in the range of 0 ÷ 5 kV/mm and in the frequency range of 0.01 ÷ 5 Hz. Measurements and analysis were performed by means of the electromechanical measurement system (STEPHV) and electromechanical response characterization program (STEP), combining large-signal modeling of the mechanical and electrical behavior of ferroelectric materials.

Endowing Ferroelectric Properties of Tetragonal Lysozyme Crystals through C60 Doping

The inherent nonpolarity of tetragonal lysozyme crystals excludes a ferroelectricity response. Herein, we present a demonstration of achieving measurable ferroelectricity in tetragonal lysozyme crystals through C60 doping. Ferroelectric characterizations revealed that C60-doped tetragonal lysozyme crystals exhibited typical characteristic ferroelectric hysteresis loops. Crystallographic structural analysis suggested that C60 doping may induce a reduction in the overall symmetry of tetragonal Lys@C60, leading to the observed ferroelectricity response. Moreover, the introduction of C60 facilitates efficient electron transport inside the crystal and influences the polarization of Lys@C60, further contributing to the observed ferroelectricity response. This work verifies that C60 doping can serve as a simple strategy to bestow novel ferroelectric properties to non-ferroelectric lysozyme crystals, potentially rendering them suitable for biocompatible and biodegradable application in implantable and wearable bioelectronics.