Electron Gas Research Articles

Physical understanding of a normally off p-GaN/AlGaN/GaN HEMT gate stack and a review of VTH measurement techniques

Abstract In this report a comprehensive review of the variations in threshold voltage (VTH) resulting from diverse VTH measurement bias conditions employed by leading manufacturers, as well as VTH extraction techniques is made. Notably, a standard deviation of 15% is observed in threshold voltage values due to variations in measurement bias conditions. This variation is attributed to the change in the lateral electic field conditions across gate and drain which occurs due to the change in bias conditions. Additionally, a simplified physical interpretation of the gate stack in p-GaN gate normally-off AlGaN/GaN on Si HEMTs is made. The formation of the two-dimensional electron gas (2DEG), the charge balance within the pGaN/AlGaN/GaN gate stack, and an analytical expression for threshold voltage are examined. Furthermore, various trapping mechanisms within the gate stack are reviewed to comprehend the dynamic conditions potentially contributing to threshold voltage instability during nominal operation.

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

AbstractThe interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Exciting the Higgs Mode in a Strongly Interacting Fermi Gas by Interaction Modulation.

We study the Higgs mode of a strongly interacting Fermi gas in the crossover regime between a fermionic and bosonic superfluid. By periodically modulating the interaction strength of the gas, we parametrically excite the Higgs mode and study its resonance frequency and line width as a function of both interaction strength and temperature. We find that the resonance frequency at low temperature agrees with a local-density approximation of the pairing gap. Both frequency and line width do not exhibit a pronounced variation with temperature, which is theoretically unexpected, however, in qualitative agreement with a different recent study.

Bioinspired recognition in metal-organic frameworks enabling precise sieving separation of fluorinated propylene and propane mixtures

The separation of fluorinated propane/propylene mixtures remains a major challenge in the electronics industry. Inspired by biological ion channels with negatively charged inner walls that allow selective transport of cations, we presented a series of formic acid-based metal-organic frameworks (MFA) featuring biomimetic multi-hydrogen confined cavities. These MFA materials, especially the cobalt formate (CoFA), exhibit specific recognition of hexafluoropropylene (C3F6) while facilitating size exclusion of perfluoropropane (C3F8). The dual-functional adsorbent offers multiple binding sites to realize intelligent selective recognition of C3F6, as supported by theoretical calculations and in situ spectroscopic experiments. Mixed-gas breakthrough experiments validate the capability of CoFA to produce high-purity (>5 N) C3F8 in a single step. Importantly, the stability and cost-effective scalable synthesis of CoFA underscore its extraordinary potential for industrial C3F6/C3F8 separations. This bioinspired molecular recognition approach opens new avenues for the efficient purification of fluorinated electronic specialty gases.

Characterization of key aroma compounds of tomato quality under enriched CO2 coupled with water and nitrogen based on E-nose and GC–MS

To investigate the impact of CO2 enrichment coupled with water and nitrogen on the formation of key aroma compounds in tomato quality, researchers characterized tomatoes from two consecutive seasons using electronic nose and gas chromatography-mass spectrometry techniques. The E-nose technique indicated W3C, W1C, W5C, W3S, and W6S being the main sensors distinguishing growth seasons. GC–MS technique identified 51 and 49 typical compounds in spring and autumn, respectively. In spring,1-Octen-3-ol and Benzyl alcohol were mainly affected by CO2, followed by I. In autumn, Hexyl alcohol, Leaf alcohol, (E)-2-Hexen-1-ol and 1-Heptanol are mainly affected by I, followed by N. Cluster analysis identified 28 different tomato aroma substances mainly in floral, grassy, and sweet compounds. Phenylethanol, β-ionone, and (E,E)-2,4-nonadienal had odor activity values exceeding 100 in both seasons. The combined application of 80 % N and 50 % ET at enriched CO2 increased the levels of characteristic volatile organic compounds in tomato.

Pseudogap Effects in the Strongly Correlated Regime of the Two-Dimensional Fermi Gas.

The two-species Fermi gas with attractive short-range interactions in two spatial dimensions provides a paradigmatic system for the understanding of strongly correlated Fermi superfluids in two dimensions. It is known to exhibit a BEC to BCS crossover as a function of ln(k_{F}a), where a is the scattering length, and to undergo a Berezinskii-Kosterlitz-Thouless superfluid transition below a critical temperature T_{c}. However, the extent of a pseudogap regime in the strongly correlated regime of ln(k_{F}a)∼1, in which pairing correlations persist above T_{c}, remains largely unexplored with controlled theoretical methods. Here, we use finite-temperature auxiliary-field quantum MonteCarlo methods on discrete lattices in the canonical ensemble formalism to calculate thermodynamical observables in the strongly correlated regime. We extrapolate to continuous time and the continuum limit to eliminate systematic errors and present results for particle numbers ranging from N=42 to N=162. We estimate T_{c} by a finite-size scaling analysis, and observe clear pseudogap signatures above T_{c} and below a temperature T^{*} in both the spin susceptibility and free-energy gap. We also present results for the contact, a fundamental thermodynamic property of quantum many-body systems with short-range interactions.

Quantum turbulence, superfluidity, non-Markovian dynamics, and wave function thermalization

While quantum turbulence has been addressed both experimentally (predominantly for superfluid He4 and He3) and theoretically, the dynamics of various ensembles of quantized vortices has been followed in time only until the vortices have decayed into phonons. How this “thermalization” is achieved is still an unaddressed and thus an unelucidated question. The unitary Fermi gas (UFG) is a unique quantum system, which has no classical counterpart and is of relevance to neutron stars, cold atoms, condensed-matter and nuclear many-body systems. The non-Markovian evolution of an isolated UFG is put in evidence and its entire nonequilibrium evolution can be studied theoretically within a unified theoretical framework. The initial lattice of quantum vortices and antivortices evolves through a couple of vortex tangles and excitation of Kelvin waves, where vortices cross and reconnect, until very slowly thermalization sets in. Published by the American Physical Society 2024

Accelerating the convergence of coupled cluster calculations of the homogeneous electron gas using Bayesian ridge regression.

The homogeneous electron gas is a system that has many applications in chemistry and physics. However, its infinite nature makes studies at the many-body level complicated due to long computational run times. Because it is size extensive, coupled cluster theory is capable of studying the homogeneous electron gas, but it still poses a large computational challenge as the time needed for precise calculations increases in a polynomial manner with the number of particles and single-particle states. Consequently, achieving convergence in energy calculations becomes challenging, if not prohibited, due to long computational run times and high computational resource requirements. This paper develops the sequential regression extrapolation (SRE) to predict the coupled cluster energies of the homogeneous electron gas in the complete basis limit using Bayesian ridge regression and many-body perturbation theory correlation energies to the second order to make predictions from calculations at truncated basis sizes. Using the SRE method, we were able to predict the coupled cluster double energies for the electron gas across a variety of values of N and rs, for a total of 70 predictions, with an average error of 5.20 × 10-4 hartree while saving 88.9h of computational time. The SRE method can accurately extrapolate electron gas energies to the complete basis limit, saving both computational time and resources. Additionally, the SRE is a general method that can be applied to a variety of systems, many-body methods, and extrapolations.

Exploring penta-ZnS2 monolayer as potential gas sensor for toxic gases based on first principles

To gain a deeper understanding of the application of ZnS2 monolayer in gas sensors, this paper predicts the electronic properties and gas sensing performance of CO, CH4, Cl2, H2S, NO and NH3 gas molecules adsorbed on ZnS2 monolayer based on first principles research. The results show that ZnS2 is sensitive to CO, Cl2, H2S, NO and NH3 by chemisorption and to CH4 by strong physisorption. The adsorption of gases effectively changes the electronic properties and gas sensing properties on ZnS2, and the bandgap of the adsorbed system changes significantly compared with the intrinsic ZnS2, and the characteristics of the work function can effectively distinguish various gases. Our calculations are of great significance for exploring the sensing applications of ZnS2 monolayer as a new member of the gas sensor family, and we expect that this work will provide new perspectives and theoretical foundations for the possible applications of ZnS2 monolayer in the sensing and processing of CO, CH4, Cl2, H2S, NO and NH3 gases.

Engineered Josephson diode effect in kinked Rashba nanochannels

The superconducting diode effect, reminiscent of the unidirectional charge transport in semiconductor diodes, is characterized by a nonreciprocal, dissipationless flow of Cooper pairs. This remarkable phenomenon arises from the interplay between symmetry constraints and the inherent quantum behavior of superconductors. Here, we explore the geometric control of the diode effect in a kinked nanostrip Josephson junction based on a two-dimensional electron gas (2DEGs) with Rashba spin-orbit interaction. We provide a comprehensive analysis of the diode effect as a function of the kink angle and the out-of-plane magnetic field. Our analysis reveals a rich phase diagram, showcasing a geometry and field-controlled diode effect. The phase diagram also reveals the presence of an anomalous Josephson effect related to the emergence of trivial zero-energy Andreev bound states, which can evolve into Majorana bound states. Our findings indicate that the exceptional synergy between geometric control of the diode effect and topological phases can be effectively leveraged to design and optimize superconducting devices with tailored transport properties.

Deep purification of perfluorinated electronic specialty gas with a scalable metal–organic framework featuring tailored positive potential traps

The sequestration of trace hexafluoropropylene (C3F6) is a critical yet formidable task in the production of high-purity perfluoropropane (C3F8), an important perfluorinated electronic specialty gas (F-gas) in the advanced electronics industry. Traditional adsorbents struggle with uneven, low-pressure uptake and compromises in selectivity. This work utilizes aperture size-electrostatic potential matching within a robust metal–organic framework (Al-PMA) to facilitate selective, reversible binding of C3F6 while excluding larger C3F8 molecules. The presence of bridging hydroxyl groups (μ2-OH) in Al-PMA creates positive electrostatic potential traps that securely anchor C3F6 through strong hydrogen bonding, evidenced by in-situ infrared and 19F magic angle spinning nuclear magnetic resonance spectroscopy. Breakthrough experiments demonstrate the efficient removal of trace C3F6 from C3F8 under ambient conditions, achieving C3F8 purity exceeding 99.999%. The scalability of Al-PMA synthesis, remarkable stability, and exceptional performance highlight its potential as a promising adsorbent for industrial C3F6/C3F8 separations.

Baryonification extended to thermal Sunyaev Zel’dovich

Baryonification algorithms model the impact of galaxy formation and feedback on the matter field in gravity-only simulations by adopting physically motivated parametric prescriptions. In this paper, we extend these models to describe gas temperature and pressure, allowing for a self-consistent modelling of the thermal Sunyaev-Zel’dovich effect, weak gravitational lensing, and their cross-correlation, down to small scales. We validate our approach by showing that it can simultaneously reproduce the electron pressure, gas, stellar, and dark matter power spectra as measured in all BAHAMAS hydrodynamical simulations. Specifically, with only two additional free parameters, we can fit the electron pressure auto- and cross-power spectra at 10% while reproducing the suppression in the matter power spectrum induced by baryons at the per cent level, for different active galactic nuclei (AGN) feedback strengths in BAHAMAS. Furthermore, we reproduce BAHAMAS convergence and thermal Sunyaev Zel’dovich angular power spectra within 1% and 10% accuracy, respectively, down to ℓ = 5000. When used jointly with cosmological rescaling algorithms, the baryonification presented here allows for a fast and accurate exploration of cosmological and astrophysical scenarios. Therefore, it can be employed to create mock catalogues, lightcones, and large training sets for emulators aimed at interpreting forthcoming multi-wavelength observations of the large-scale structure of the Universe.

Spin-dependent conductance and magnetoresistance ratio in two magnetic-barrier structures

An improved transfer matrix method is developed with modular matrices for rectangular electric and magnetic vector potentials, as well as the δ-function like potentials. As an example, the spin-dependent conductance in two-dimensional electron gas under modulation of two magnetic barriers are recalculated and compared with those illustrated in (Wang et al. Chin. Phys. B 19, 037301(2010)). The previous results are found inaccurate, their transfer matrix was derived for slowly varying magnetic vector potential, which is inappropriate for δ-function like Zeeman interaction potentials. Furthermore, the last transfer matrix of eq. (4) is also found incorrect, and the Zeeman interaction is wrongly expressed and mistakenly enhanced about (1/0.067 ≈ 15) times. Our improved method here is general and is demonstrated very fast forevaluating various spin-dependent transport properties in complex hybrid magnetic–electric structures.

Pseudo-proper two-dimensional electron gas formation

Abstract In spite of the interest in the two-dimensional electron gases (2DEGs) experimentally found at surfaces and interfaces, important uncertainties remain about the observed insulator–metal transitions (IMTs). Here we show how an explicit pseudo-proper coupling of carrier sources with a relevant soft mode significantly affects the transition. The analysis presented here for 2DEGs at polar interfaces is based on group theory, Landau–Ginzburg theory, and illustrated with first-principles calculations for the prototypical case of the LaAlO 3 / SrTiO 3 interface, for which such a structural transition has recently been observed. This direct coupling implies that the appearance of the soft mode is always accompanied by carriers. For sufficiently strong coupling an avalanche-like first-order IMT is predicted.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor (TFT) using the elevated-metal metal-oxide (EMMO) architecture and indium−zinc oxide (InZnO). The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas (2DEG) at the interface quantum well, as verified using a metal−insulator−semiconductor (MIS) device. Although the 2DEG indeed contributes to a higher mobility than the monolayer channel, the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect, originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well. Benefited from the proper energy-band engineering, a high mobility of 84.3 cm2·V−1·s−1, a decent threshold voltage (V th) of −6.5 V, and a steep subthreshold swing (SS) of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta doping

Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising route to advance microwave and power electronics with nitride semiconductors. The electron mobility in thin GaN quantum wells embedded in AlN is limited by high internal electric field and the presence of undesired polarization-induced two-dimensional hole gases (2DHGs). To enhance the electron mobility in such heterostructures on AlN, previous efforts have resorted to thick, relaxed GaN channels with dislocations. In this work, we introduce n-type compensation δ-doping in a coherently strained single-crystal (Xtal) AlN/GaN/AlN heterostructure to counter the 2DHG formation at the GaN/AlN interface, and simultaneously lower the internal electric field in the well. This approach yields a δ-doped XHEMT structure with a high 2DEG density of ∼3.2×1013 cm−2 and a room temperature (RT) mobility of ∼855 cm2/Vs, resulting in the lowest RT sheet resistance 226.7 Ω/□ reported to date in coherently strained AlN/GaN/AlN HEMT heterostructures on the AlN platform.

Gate tunable edge magnetoplasmon resonators

AbstractQuantum Hall systems are platforms of choice to study topological properties of condensed matter systems and anyonic exchange statistics. In this work we have developed a tunable radiofrequency edge magnetoplasmonic resonator controlled by both the magnetic field and a set of electrostatic gates, meant to serve as a versatile platform for future interferometric devices designed to evidence non-abelian anyons. In our device, gates allow us to change both the size of the resonant cavity and the electronic density of the two-dimensional electron gas. We show that we can continuously control the frequency response of our resonator, making it possible to develop an edge magnetoplasmon interferometer. As we reach smaller sizes of our resonator, finite size effects caused by the measurement probes manifest. In the future, such device will be a valuable tool to investigate the properties of non-abelian anyons in the fractional quantum Hall regime.

A Novel Isolation Approach for GaN-Based Power Integrated Devices.

This paper introduces a novel technology for the monolithic integration of GaN-based vertical and lateral devices. This approach is groundbreaking as it facilitates the drive of high-power GaN vertical switching devices through lateral GaN HEMTs with minimal losses and enhanced stability. A significant challenge in this technology is ensuring electrical isolation between the two types of devices. We propose a new isolation method designed to prevent any degradation of the lateral transistor's performance. Specifically, high voltage applied to the drain of the vertical GaN power FinFET can adversely affect the lateral GaN HEMT's performance, leading to a shift in the threshold voltage and potentially compromising device stability and driver performance. To address this issue, we introduce a highly doped n+ GaN layer positioned between the epitaxial layers of the two devices. This approach is validated using the TCAD-Sentaurus simulator, demonstrating that the n+ GaN layer effectively blocks the vertical electric field and prevents any depletion or enhancement of the 2D electron gas (2DEG) in the lateral GaN HEMT. To our knowledge, this represents the first publication of such an innovative isolation strategy between vertical and lateral GaN devices.

Enhanced non-equilibrium Peltier cooling through electron gas expansion: A Monte Carlo simulation study

We demonstrate enhanced Peltier cooling at the nanoscale using geometrical constriction. This nozzle structure leads to electron expansion under an applied bias, which in turn results in additional cooling. This extra cooling enhances the overall Peltier effect when the electrons are out of equilibrium with the lattice. An ensemble Monte Carlo simulation is used to demonstrate the non-equilibrium expansion of an electron gas using nanoscale trapezoidal geometric confinement. The proposed device operates under steady-state conditions, providing enhanced cooling compared to a one-dimensional flat geometry. We observe a five-fold increase in both the maximum cooling temperature and cooling power density, reaching more than 5 kW/cm2, when comparing the trapezoidal geometry to the regular flat geometry.

Measurement of fast neutron induced (n,γ) reaction cross-section of 68Zn, 96Zr, 121Sb and 123Sb in the energy range of 1 to 2 MeV

The (n,γ) reaction cross-section for the elements 68Zn, 96Zr, 121Sb and 123Sb, present in the reactor structural/shielding materials, was measured by neutron activation technique in the neutron energy region of 1–2 MeV as very limited data is available in this energy range. Further, the neutron spectrum peaks in this energy region for the fast breeder reactors and proposed accelerator driven sub-critical systems. The natural strontium (natSr) element was used as a neutron flux monitor by considering effective combined reaction cross-section for 86Sr(n,γ)87Srm and 87Sr(n,n′)87Srm reactions. The pellets of mixture of sample and monitor were irradiated by a quasi-mono energetic fast neutron beam, generated by 7Li(p,n)7Be reaction at FOTIA, Bhabha Atomic Research Centre, Mumbai, India. The activity of activation products was measured by off-line gamma-ray spectrometry using High Purity Germanium Detector (HPGe). The present data with improved uncertainty and covariance analysis enhance the cross-section data base for better constraining the evaluated data and theoretical models. The theoretical (n,γ) reaction cross-sections were calculated using TALYS 1.96, which could reasonably explain the present data with the Fermi gas level density prescription.