Fermi Level Position Research Articles

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications.

The Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena. In this study, contactless electroreflectance (CER) was utilized for the first time to investigate the built-in electric field in MXene/GaN structures with the goal of understanding the carrier transfer across the MXene/GaN interface. Five MXenes with high work functions were examined: Cr2C, Mo2C, V2C, V4C3, and Ti3C2. The physicochemical properties of the MXene/GaN structures were analyzed by using X-ray and UV photoelectron spectroscopies. It was shown that upon the coverage of the GaN surface by all investigated MXenes, a shift in the position of the surface Fermi level occurs, consequently raising the interface barrier. Additionally, the physicochemical stability of MXenes on the GaN surface was studied after annealing the structures at 750 °C. Our findings indicate that the annealing process increases the barrier height and the ionization energies of all studied structures. Furthermore, it has been shown that removing excess MXene material from the surface did not significantly impact the built-in electric field, emphasizing the robust physicochemical stability of the MXenes on the GaN surface. To validate the potential of engineering of MXene/GaN interface barrier, Schottky diodes with MXenes exhibiting the highest barrier height (Mo2C and V2C) were demonstrated.

Ultrathin SiONC passivation of c-Si by UHV thermal annealing in O₂/N₂: Chemical composition, morphology, and photoluminescence insights

This study investigates the impact of Ultra-High Vacuum (UHV) Thermal annealing in a N₂/O₂ atmosphere on the passivation of Ar ion etched crystalline silicon (c-Si) surfaces. A comprehensive analysis of the resulting ultrathin Silicon OxyNitride Carbide layer (SiONC) was conducted using X-ray Photoelectron Spectroscopy (XPS), Ultra-Violet Spectroscopy (UPS), Photoluminescence Spectroscopy (PL), and Atomic Force Microscopy (AFM). XPS revealed a significant transformation in chemical composition from a carbon-rich contaminated surface SiO1.02C2.98 to an oxygen- and nitrogen-containing passivated layer SiO0.13N0.10C0.28. UPS measurements elucidated changes in the electronic structure and Fermi level position at the c-Si/SiONC interface. AFM imaging demonstrated the formation of non-uniform SiONC islands, influencing surface morphology. Notably, PL spectroscopy indicated enhanced orange and red luminescence with energies of 2.0 and 1.73 eV, respectively, attributed to the SiONC layer. The enhanced luminescence, coupled with improved thermal stability and oxidation resistance, positions the SiONC layer as a promising material for advancing the performance of silicon-based optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). This study provides fundamental insights into the correlation between the chemical, electronic, and morphological properties of the SiONC layer and its potential for improving c-Si device performance.

The use of 1D carbon nanotube interacting with caffeine molecules for applications in solar cells: structure optimisation, Raman analysis and optoelectronic properties

This study proposes a promising candidate for organic solar cells through the creation of a novel nano-hybrid system composed of caffeine molecules encapsulated within a semiconducting single-walled carbon nanotube known as NT14 (14,0). The stability and optoelectronic properties of this hybrid system, designated as CA@NT14, were thoroughly investigated. We determined the optimal diameter for the NT14 nanotube using molecular mechanics, Density Functional Theory, spectral moment’s method, and bond polarizability model, finding it to be approximately 1.18 nm. The encapsulation’s impact on the Raman-active modes, specifically the radial breathing mode and tangential mode, was analyzed through Raman spectra calculations, revealing structural stability and charge transfer from CA to NT14. Notably, the NT14’s Fermi level position increased upon encapsulation, indicating charge transfer and a type-II band alignment. The study further examined the bandgap characteristics of the hybrid system, finding that the encapsulation of CA within semiconducting NT14 nanotubes minimally impacts the nanotube’s bandgap, thus retaining its excellent visible light absorption properties. Conversely, encapsulating CA within metallic nanotubes significantly reduces their bandgap, limiting their light absorption range. The nonresonant Raman responses of NT14 pre- and post-encapsulation corroborated the charge transfer between CA and NT14. Future research will focus on computing the electronic transport characteristics, transmission spectra, I-V characteristics, and yield of CA@NT14 using DFT and Non-Equilibrium Green’s Function ( formalism. An experimental study will be conducted to validate these theoretical findings. These results indicate the potential of CA@NT14 hybrids as effective active layers in organic solar cells, highlighting their significance in advancing optoelectronic applications.

(Invited) Silicon Nanocrystals and Electrum Nanoclusters with High Quantum Yield for Light Converting Applications

While QDs are typically made of semiconductors, metals at low dimensions also turn to discrete electronic structure. The characteristic transition size from bulk to nanodot is lower, because Fermi level position is at the band middle, while discretization of levels starts from the band edge. Therefore, only for sizes of a metal entity ~ 1 nm a QD-like behavior manifests.Here we show that metal nanoclusters Au16Ag7 of an electrum alloy (gold-silver) with adamantanethiolate ligands possess PL quantum yield of ~ 70% in a thiol-ene polymer matrix [1]. PL is in NIR range with a large Stokes shift. Due to parity-forbidden transition the PL lifetime is in microseconds. These characteristics are similar to silicon QDs, where optical transition is also partly forbidden. Luminescence from Si QDs (5-10 nm size) may also feature high quantum efficiency when a defect-free core with good surface passivation is prepared. We have demonstrated a new synthesis method, which can reduce precursor cost by an order of magnitude from the established HSQ-based technique [2]. Si QDs prepared in this way have near-unity internal and > 50% external (quantum yield) efficiency with a large Stokes shift. In both nanomaterials the re-absorption is suppressed, which is of value for several applications.One such application is a semi-transparent photovoltaics for glazing in building-integration. It is based on a luminescent solar concentrator concept, where high efficiency and a large Stokes shift are necessary requirements for nanophosphors. In this configuration absorbed solar light is re-emitted and a large fraction of it is guided by total internal reflection to the edges for collection by standard solar cells. As a proof-of-concept we fabricated 20x20 cm2 prototypes, where Si QD-doped polymer layer is sandwiched between glass plates in a triplex geometry. Such “solar windows” feature high transparency (>80%), low haze (<3%), high color rendering index (~ 88) and, at the same time, deliver up to 0.6 W of electrical peak power under one sun [3]. Original measurement techniques were developed to characterize large-area devices [4,5].

Lifshitz Transition in a Single-Atom-Thick GdxYb1-xPb3 Kagome Compound on Si(111).

Lanthanide (Ln) elements Gd and Yb alloyed with a Pb monolayer on the Si(111) substrate form LnPb3 compounds having the same crystal structure. They comprise a single-atom-thick Pb layer arranged in a slightly distorted kagome lattice with Ln atoms filling the hexagonal voids. They have similar electronic band structures except for the Fermi level position, which varies between the divalent Yb- and trivalent Gd-containing compounds by ∼0.47 eV. The ability to create a 2D solid solution with the unified continuous Pb layer and hexagonal voids randomly filled with either Gd or Yb atoms allows precise control of the Fermi level position. Small alteration of the Fermi level triggers drastic changes in the Fermi surface topology due to the Lifshitz transition, hence in the physical properties. In particular, the sheet resistance of the GdxYb1-xPb3/Si(111) system can be controllably varied over an order of magnitude range.

Boosting photoelectron transfer by Fermi and doping levels regulation in carbon nitride towards efficient solar-driven hydrogen production

The exploration of efficient photosystems with fast carrier dynamics is an important pursuit for solar conversion into hydrogen energy, while tremendous challenges remain since the intrinsic relationship between the band structure and the charge transfer behavior in semiconductors is still elusive. Towards this, P doped graphitic carbon nitride (P-g-C3N4) is fabricated as a prototype photocatalyst with P existing in P − N = C state. Through tuning the content of P to modulate the electronic donor concentration, the Fermi level of g-C3N4 is unidirectionally regulated from below to above the doping level induced by P. And it is revealed that the relative position of Fermi level vs. doping level plays a crucial role in determining the charge migration dynamics, where only a doping state near the Fermi level can act as the most efficient electron trap to prolong carrier lifetime. Accordingly, the precisely tailored P-g-C3N4 achieves a superior apparent quantum efficiency (AQE) of 5.7 % at 420 nm in overall water splitting that is among the highest levels of current photosystems. Our findings offer an innovative strategy for band structure regulation toward efficient photocatalysis.

First-principles study of defects and doping limits in CaO

Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide bandgap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit Fermi-level positions and doping in CaO. We find calcium and oxygen vacancies to be the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevailing under O-rich conditions and act as compensating donors. Due to compensation by these defects, O-poor conditions are required to dope CaO n-type, while O-rich conditions are required for p-type doping. We find that, at room temperature, intrinsic CaO can only achieve Fermi-level positions between 1.76 eV above the valence-band maximum (VBM) and 1.73 eV below the conduction-band minimum (CBM). If suitable shallow dopants are found, the allowed range of Fermi levels would increase to between VBM + 0.53 eV and CBM − 0.27 eV and is set by the compensating intrinsic defects. Additionally, we study hydrogen impurities, and show that hydrogen will not only limit p-type doping but can also act as shallow donor when substituting oxygen (HO defects).

Revealing Fermi surface evolution and Berry curvature in an ideal type-II Weyl semimetal

In type-II Weyl semimetals (WSMs), the tilting of the Weyl cones leads to the coexistence of electron and hole pockets that touch at the Weyl nodes. These electrons and holes experience the Berry curvature generated by the Weyl nodes, leading to an anomalous Hall effect that is highly sensitive to the Fermi level position. Here we have identified field-induced ferromagnetic MnBi2-xSbxTe4 as an ideal type-II WSM with a single pair of Weyl nodes. By employing a combination of quantum oscillations and high-field Hall measurements, we have resolved the evolution of Fermi-surface sections as the Fermi level is tuned across the charge neutrality point, precisely matching the band structure of an ideal type-II WSM. Furthermore, the anomalous Hall conductivity exhibits a heartbeat-like behavior as the Fermi level is tuned across the Weyl nodes, a feature of type-II WSMs that was long predicted by theory. Our work uncovers a large free carrier contribution to the anomalous Hall effect resulting from the unique interplay between the Fermi surface and diverging Berry curvature in magnetic type-II WSMs.

Study of silicon surface passivation by ZnOx/AlOx stack prepared using super-cycle approach in thermal ALD process

High quality surface passivating films are essential for high efficiency solar cells. In this work, we present our study about the silicon surface passivation performance of thermal atomic layer deposited (T-ALD) ZnOx/AlOx stack deposited using super-cycle approach. Super-cycle approach is composed of three cycles of DEZ-DI water system followed by one cycle of TMA-DI water system. The number of super-cycles is varied to change the film thickness. Excellent passivation with surface recombination velocity ∼ 7 cm/s was achieved under this study for hydrogen annealed films. The passivation mechanism is related to the saturation of defects by hydrogen after annealing and further improvement in fixed oxide charges by one order of magnitude (1010 to 1011 cm−2). Hydrogenation at the optimum temperature (450⁰C) involves the transport of hydrogen atoms towards the interface and their interaction with dangling bonds at the Si surface leading to the effective passivation. The optical transmittance of the film in the visible region of the spectrum is found to be >95 % for all the deposited films. XPS data reveals that deposited films are Al rich which is possible due to ligand exchange reactions during the growth process. Annealing of ZnOx/AlOx stacks in hydrogen ambient and their Al-rich behavior helps in the realization of good passivation performance. XPS study also shows that Al-O bond improves with film thickness. According to valence band spectra, a relative shift in Fermi level position with regard to the valence band improves band bending, which improves field effect passivation. Such high-quality ZnOx/AlOx passivating films may improve the device efficiency.

Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures.

Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

Imparting Chemiresistor with Humidity-Independent Sensitivity toward Trace-Level Formaldehyde via Substitutional Doping Platinum Single Atom.

The modification of metal oxides with noble metals is one of the most effective means of improving gas-sensing performance of chemiresistors, but it is often accompanied by unintended side effects such as sensor resistance increases up to unmeasurable levels. Herein, a carbonization-oxidation method is demonstrated using ultrasonic spray pyrolysis technique to realize platinum (Pt) single atom (SA) substitutional doping into SnO2 (named PtSA-SnO2). The substitutional doping strategy can obviously enhance gas-sensing properties, and meanwhile decrease sensor resistance by two orders of magnitude (decreased from ≈850 to ≈2 MΩ), which are attributed to the tuning of band gap and fermi-level position, efficient single atom catalysis, and the raising of adsorption capability of formaldehyde, as validated by the state-of-the-art characterizations, such as spherical aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM), in situ diffuse reflectance infrared Fourier transformed spectra (in situ DRIFT), CO temperature-programmed reduction (CO-TPR), and theoretical calculations. As a proof of concept, the developed PtSA-SnO2 sensor shows humidity-independent (30-70% relative humidity) gas-sensing performance in the selective detection of formaldehyde with high response, distinguishable selectivity (8< Sformaldehyde/Sinterferant <14), and ultra-low detection limit (10 ppb). This work presents a generalized and facile method to design high-performance metal oxides for chemical sensing of volatile organic compounds (VOCs).

Odnovremennoe nablyudenie tsiklotronnogo rezonansa dyrok i elektronov v dvoynoy kvantovoy yame HgTe/CdHgTe v usloviyakh effekta “opticheskogo zatvora”

Spectral studies of the photoconductivity in the temperature range of T = 5–70 K, as well as studies of the magneto-absorption and magnetotransport at T = 4.2 K, have been performed in a HgTe/CdHgTe heterostructure with a double quantum well under an “optical gate” effect. Studies of magneto-absorption spectra under the controlled optical exposure have made it possible to observe absorption lines caused by both the cyclotron resonances of electrons and holes simultaneously. The coexistence of electrons and holes in the HgTe/CdHgTe double quantum well with a relatively large bandgap (~80 meV) indicates the appearance of a strongly inhomogeneous light-induced distribution of charge carriers in the plane of the structure. Experimental results obtained clearly demonstrate disadvantages of the control of the Fermi level positions in heterostructures with HgTe/CdHgTe quantum wells by means of the optical gate.

Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under “Optical Gate” Effect

Spectral studies of the photoconductivity in the temperature range of T = 5–70 K, as well as studies of the magneto-absorption and magnetotransport at T = 4.2 K, have been performed in a HgTe/CdHgTe heterostructure with a double quantum well under an “optical gate” effect. Studies of magneto-absorption spectra under the controlled optical exposure have made it possible to observe absorption lines caused by both the cyclotron resonances of electrons and holes simultaneously. The coexistence of electrons and holes in the HgTe/CdHgTe double quantum well with a relatively large bandgap (~80 meV) indicates the appearance of a strongly inhomogeneous light-induced distribution of charge carriers in the plane of the structure. Experimental results obtained clearly demonstrate disadvantages of the control of the Fermi level positions in heterostructures with HgTe/CdHgTe quantum wells by means of the optical gate.

Obviating Ligand Exchange Preserves the Intact Surface of HgTe Colloidal Quantum Dots and Enhances Performance of Short Wavelength Infrared Photodetectors.

A large volume, scalable synthesis procedure of HgTe quantum dots (QDs) capped initially with short-chain conductive ligands ensures ligand exchange-free and simple device fabrication. An effective n- or p-type self-doping of HgTe QDs is achieved by varying cation-anion ratio, as well as shifting the Fermi level position by introducing single- or double-cyclic thiol ligands, that is, 2-furanmethanethiol (FMT) or 2,5-dimercapto-3,4-thiadiasole (DMTD) in the synthesis. This allows for preserving the intact surface of the HgTe QDs, thus ensuring a one order of magnitude reduced surface trap density compared with HgTe subjected to solid-state ligand exchange. The charge carrier diffusion length can be extended from 50 to 90nm when the device active area consists of a bi-layer of cation-rich HgTe QDs capped with DMTD and FMT, respectively. As a result, the responsivity under 1340nm illumination is boosted to 1 AW-1 at zero bias and up to 40 AW-1 under -1V bias at room temperature. Due to high noise current density, the specific detectivity of these photodetectors reaches up to 1010 Jones at room temperature and under an inert atmosphere. Meanwhile, high photoconductive gain ensures a rise in the external quantum efficiency of up to 1000% under reverse bias.

Band offsets and point-defect charges of the aluminum and hafnium oxides in contact with the Cu(In,Ga)Se2 chalcopyrite

Surface passivation of CuInSe2 (CIS) and related Cu(In,Ga)Se2 (CIGS) chalcopyrite materials by depositing selected dielectric layers has been a major research activity aiming to reduce interface recombination and increase the electrical efficiency of chalcopyrite-based thin-film solar cells. The present study reports calculations based on density-functional theory and ab-initio thermodynamics that examine the origin of field-effect passivation from alumina and hafnia two wide-gap, predominantly ionic insulators that have exhibited promising passivation qualities in silicon-based microelectronics. The source of fixed charges within the bulk lattices of both oxides was studied by determining the thermodynamically most favorable charge states of their native defects within the admissible ranges of the metal and oxygen chemical potentials. An alignment of the electron bands based on the branch-point energies was performed in order to correctly place the defect charge-transition levels with respect to the band edges of the CIS and the CIGS materials. The trends and predictions of the sign of the fixed charges in either insulator were obtained as a function of temperature, oxygen partial pressure and Fermi-level position inside the band gaps of CIS and CIGS. The findings are discussed in connection with existing experimental studies that extracted the magnitude and polarity of the fixed charges of both alumina and hafnia by analyzing the electrical properties of the CIGS/insulator interfaces.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion.

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Photoemission Study of the Thermoelectric Group IV‐VI van der Waals Crystals (GeS, SnS, and SnSe)

AbstractGroup IV‐VI van der Waals crystals (MX, where M = Ge, Sn, and X = S, Se) are receiving increasing attention as semiconducting thermoelectric materials with nontoxic, earth‐abundant composition. Among them, SnSe is considered the most promising as it exhibits a remarkably high thermoelectric figure of merit (ZT), initially attributed to its low lattice thermal conductivity. However, it has been shown that the electronic band structure plays an equally important role in thermoelectric performance. A certain band shape, described as a “pudding mold” and characteristic for all MXs, has been predicted to significantly improve ZT by combining good electrical conductivity with high Seebeck coefficient. This subtle feature is explored experimentally for GeS, SnS, and SnSe by means of angle‐resolved photoemission spectroscopy. The technique also allows for the determination of the effective mass and Fermi level position of as‐grown undoped crystals. The findings are supported by ab initio calculations of the electronic band structure. The results greatly contribute to the general understanding of the valence band dispersion of MXs and reinforce their potential as high‐performance thermoelectric materials, additionally giving prospects for designing systems consisting of van der Waals heterostructures.

Physical properties of LaBO3 (B = Mn, Fe, Co) thin films grown on SrTiO3 by pulsed laser deposition technique

Realizing an oxide thin film with proper stoichiometry is one of the most challenging objects in materials science. Owing to the growth dynamics as well as kinetics, the physical properties of thin films often differ from their bulk counterparts. Here, we report pulsed laser-deposited thin films of LaBO3 (B = Mn, Fe, Co) grown on a SrTiO3 (001) substrate under various thermodynamic conditions. Structural, magnetic, and optical studies have been carried out. The x-ray diffraction study confirms that an appropriate choice of growth thermodynamics may help one to realize epitaxially grown films on the SrTiO3 substrate with out-of-plane lattice parameters 3.976, 3.984, and 3.825 Å for LaMnO3 (LMO), LaFeO3 (LFO), and LaCoO3 (LCO), respectively. A mixed valence state of Mn2+, 3+, 4+ for LMO, a Fe3+ state for LFO, and a mixed state of Co2+, 3+ for LCO have been confirmed by x-ray photoelectron spectroscopy, which is in good agreement with the Ellingham diagram. The optical study showed a bandgap of 1.2, 2.5, and 1.5 eV for LMO, LFO, and LCO, respectively. Ultraviolet photoelectron spectroscopy (UPS) shows a glimpse of the valence band maximum and Fermi level position. UV, UPS, and photoconductive study simultaneously results in a type II band bending, i.e., staggered type bending is observed at these interfaces. Room temperature weak ferromagnetism along with the insulating nature and a sign of photovoltaic application of these thin films fascinate to carry forward rigorous study from fundamental as well as technological points of view.

Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study

Optically active spin defects in semiconductors can serve as spin-to-photon interfaces, key components in quantum technologies. Silicon carbide (SiC) is a promising host of spin defects thanks to its wide bandgap and well-established crystal growth and device technologies. In this study, we investigated the oxygen-vacancy complexes as potential spin defects in SiC by means of ab initio calculations. We found that the OCVSi defect has a substantially low formation energy compared with its counterpart, OSiVC, regardless of the Fermi level position. The OCVSi defect is stable in its neutral charge state with a high-spin ground state (S = 1) within a wide energy range near the midgap energy. The zero-phonon line (ZPL) of the OCVSi0 defect lies in the near-infrared regime, 1.11–1.24 eV (1004–1117 nm). The radiative lifetime for the ZPL transition of the defect in kk configuration is fairly short (12.5 ns). Furthermore, the estimated Debye–Waller factor for the optical transition is 13.4%, indicating a large weight of ZPL in the photoluminescence spectrum. All together, we conclude that the OCVSi0 defect possesses desirable spin and optical properties and thus is potentially attractive as a quantum bit.

N-type CdTe:In for photovoltaics: in situ doping, type verification and compensation effects

We explored the in-situ doping of cadmium telluride thin films with indium to produce n-type absorbers as an alternative to the near-universal choice of p-type for photovoltaic devices. The films were grown by close space sublimation from melt-synthesised feedstock. Transfer of the indium during film growth was limited to 0.0014%–0.014%—unless reducing conditions were used which yielded 14%–28% efficient transport. While chunks of bulk feedstock were verified as n-type by the hot probe method, carrier type of thin film material was only able to be verified by using hard x-ray photoelectron spectroscopy to determine the Fermi level position within the band gap. The assignment of n-type conductivity was consistent with the rectification behaviour of a p-InP/CdTe:In junction. However, chloride treatment had the effect of compensating n-CdTe:In to near-intrinsic levels. Without chloride, the highest dopant activation was 20% of the chemical concentration of indium, this being for a film having a carrier concentration of n = 2 × 1015 cm−3. However, the activation was often much lower, and compensation due to over-doping with indium and native defects (stoichiometry) are discussed. Results from preliminary bifacial devices comprising Au/P3HT/ZnTe/CdTe:In/CdS/FTO/glass are presented.