Femtosecond Time-resolved Photoemission Research Articles

Lifetime mapping using femtosecond time-resolved photoemission electron microscopy.

Time-resolved photoemission electron microscopy (PEEM) has established itself as a versatile experimental technique to unravel the ultrafast electron dynamics of materials with nanometer-scale resolution. However, the approach of performing PEEM-based, pixel-by-pixel lifetime mapping has not been reported thus far. Herein, we describe in detail the data pre-processing procedure and an algorithm to perform time-trace fittings of each pixel. We impose an energy cutoff for each pixel prior to spectral integration to enhance the robustness of our approach. With the energy cutoff, the energy-integrated time traces show improved statistics and lower fitting errors, thus resulting in a more accurate determination of the fit parameters, e.g., decay time constants. Our work allows us to reliably construct PEEM-based lifetime maps, which potentially shed light on the effects of local microenvironment on the ultrafast processes of the material and allow spatial distributions of lifetimes to be correlated with observables obtained from complementary microscopic techniques, hence enabling a more comprehensive characterization of the material.

Photoinduced Dynamics at the Water/TiO_{2}(101) Interface.

We present a femtosecond time-resolved optical pump-soft x-ray probe photoemission study in which we follow the dynamics of charge transfer at the interface of water and anatase TiO_{2}(101). By combining our observation of transient oxygen O 1s core level peak shifts at submonolayer water coverages with Ehrenfest molecular dynamics simulations we find that ultrafast interfacial hole transfer from TiO_{2} to molecularly adsorbed water is completed within the 285fs time resolution of the experiment. This is facilitated by the formation of a new hydrogen bond between an O_{2c} site at the surface and a physisorbed water molecule. The calculations fully corroborate our experimental observations and further suggest that this process is preceded by the efficient trapping of the hole at the surface of TiO_{2} by hydroxyl species (-OH), that form following the dissociative adsorption of water. At a water coverage exceeding a monolayer, interfacial charge transfer is suppressed. Our findings are directly applicable to a wide range of photocatalytic systems in which water plays a critical role.

Flexible manipulation of plasmon dephasing time via the adjustable Fano asymmetric dimer

It is highly desirable to flexibly and actively manipulate the dephasing time of a plasmon in many potential applications; however, this remains a challenge. In this work, by using femtosecond time-resolved photoemission electron microscopy, we experimentally demonstrated that the Fano resonance mode in the asymmetric nanorod dimer can greatly extend the dephasing time of a femtosecond plasmon, whereas the non-Fano resonance results in a smaller dephasing time due to the large radiative damping, and flexible manipulation of the dephasing time can be realized by adjusting one of the nanorods in the Fano asymmetric dimer. Interestingly, it was found that plasmon resonance wavelengths both appeared red-shifted as the length of the upper or lower nanorods increased individually, but the dephasing time varied. Furthermore, it also indicated that the dephasing time can be prolonged with a smaller ascending rate by increasing the length of both the nanorods simultaneously while keeping the dimer asymmetry. Meanwhile, the roles of radiative and nonradiative damping in dephasing time are unveiled in the process of nanorod length variation. These results are well supported by numerical simulations and calculations.

Two-color laser PEEM imaging of horizontal and vertical components of femtosecond surface plasmon polaritons

Explicit visualization of different components of surface plasmon polaritons (SPPs) propagating at dielectric/metal interfaces is crucial in offering chances for the detailed design and control of the functionalities of plasmonic nanodevices in the future. Here, we reported independent imaging of the vertical and horizontal components of SPPs launched from a rectangular trench in the gold film by a 400-nm laser-assisted near-infrared (NIR) femtosecond laser time-resolved photoemission electron microscopy (TR-PEEM). The experiments demonstrate that distinct imaging of different components of SPPs field can be easily achieved by introducing the 400-nm laser. It can circumvent the risk of sample damage and information loss of excited SPPs field that is generally confronted in the usual NIR laser TR-PEEM scheme. The underlying mechanism for realizing distinct imaging of different components of the SPPs field with two-color PEEM is revealed via measuring the double logarithmic dependence of photoemission yield with the 800-nm and 400-nm pulse powers of different polarizations. Moreover, it is found that the PEEM image quality of the vertical and horizontal components of the SPPs field is nearly independent of the 400-nm pulse polarization. These results pave a way for SPPs-based applications and offer a possible solution for drawing a space–time field of SPPs in three dimensions.

(Invited) Discovering Bottlenecks and Opportunities in Hybrid Solar Light Harvesting Systems By Ultrafast X-Ray Spectroscopy

A prerequisite for advancing hybrid solar light harvesting systems is a comprehensive understanding of photoinduced electronic dynamics across a wide range of spatial and temporal scales. Time-resolved spectroscopy techniques in the optical domain have proven instrumental in identifying critical timescales of fundamental processes, such as interfacial charge transfer, charge migration, and carrier lifetimes, which are intimately linked to a system's performance. New light source and instrument developments open opportunities to extend such studies into the X-ray regime. Due to their inherent elemental specificity and sensitivity to local electronic environments, time-domain X-ray spectroscopy techniques are uniquely suited to gain a microscopic picture of dynamics from well-defined reporter sites within often complex nanoscale light harvesting architectures. We will present new insights into fundamental photoinduced dynamics in several archetypical heterostructures based on femtosecond and picosecond time-resolved X-ray photoemission spectroscopy (TRXPS).The photoinduced transient charge redistribution in the model hybrid system of nanoporous zinc oxide (ZnO) sensitized by ruthenium bipyridyl chromophores is probed independently from the viewpoints of the molecular electron donor and the semiconductor acceptor.[1] Charge injection from the chromophore into the semiconductor is found to proceed via a transiently populated interfacial charge transfer (ICT) complex on an overall timescale of ~300 ps. Our results show that, even after release from the ICT states into the ZnO conduction band, the injected electrons remain localized within less than 6 nm from the interface, due to enhanced downward band-bending by the photo-injected charge carriers. This spatial confinement suggests that light-induced charge generation and transport in nanoscale ZnO photocatalytic devices proceeds predominantly within the defect-rich surface region, which may lead to enhanced surface recombination and explain their lower performance compared to titanium dioxide (TiO2)-based systems. The quantitative nature and surface sensitivity of TRXPS also provides direct access to the spatial separation of the holes remaining on the bipyridyl chromophores after charge injection from the semiconductor surface with sub-nm precision.Complementary femtosecond and picosecond TRXPS studies of photoinduced dynamics in copper-phthalocyanine(CuPc)-C60 heterojunctions provide a deeper understanding of both exciton migration pathways toward the interface as well as the absolute efficiency by which ICT states dissociate into separate charges.[2] The measurements reveal surprisingly efficient charge generation from triplet excitons and from the lowest lying ICT states, both of which were previously believed to be inactive during light-to-charge conversion.Photoinduced charge transfer dynamics between spherical gold nanoparticles (AuNPs) and a nanoporous film of TiO2 is monitored by picosecond TRXPS, providing direct access to the absolute photon-to-charge conversion efficiency and subsequent electron-hole recombination dynamics.[3] Preliminary results will be presented for the extension of the measurements into the ambient pressure regime, taking a first step toward the study of photoinduced interfacial chemistry by TRXPS in this model system for nanoplasmonic light harvesting applications.[1] S. Neppl et al., “Nanoscale Confinement of Photo-Injected Electrons at Hybrid Interfaces”, J. Phys. Chem. Lett. 12, 11951 (2021).[2] F. Roth et al., “Direct observation of charge separation in an organic light harvesting system by femtosecond time-resolved XPS”, Nat. Commun. 12, 1196 (2021).[3] M. Borgwardt et al., “Photoinduced Charge Carrier Dynamics and Electron Injection Efficiencies in Au Nanoparticle-Sensitized TiO2 Determined with Picosecond Time-Resolved X-ray Photoelectron Spectroscopy”, J. Phys. Chem. Lett. 11, 5476 (2020). Figure 1

Spatially heterogeneous ultrafast interfacial carrier dynamics of 2D-MoS2 flakes

Understanding the ultrafast carrier dynamics of transition metal dichalcogenides is critical for future applications in high-speed electronic and optoelectronic devices. In this work, we used a combination of femtosecond (fs) time-resolved micro-area photoelectron spectroscopy and photoemission electron microscopy (PEEM) to obtain the space-resolved surface photovoltage (SPV) and photoelectron intensity dynamics of two-dimensional (2D) molybdenum disulfide (MoS2) flakes, both of which exhibited high spatial heterogeneity and defect effects. Additionally, surface S vacancy defects were characterized by spatially resolved X-ray photoelectron spectroscopy. The SPV relaxation dynamics indicated that the charge carrier lifetime in the space-charge layer (SCL) ranged from several to tens of nanoseconds and was dominated by the thermionic emission process. The defects, which acted as electron-hole recombination centers, greatly shortened the charge carrier lifetime by almost one order of magnitude. Furthermore, three relaxation processes were observed in the photoelectron intensity dynamics, namely, two fast processes with rates of 3–6 ps (ps) and 60–100 ps, which were largely affected by the defect density, and one slow relaxation process with a rate of 2–5 ns (ns). However, these were not related to the defect density and were attributed to the transportation of electrons towards the bulk. Therefore, our results provide a deeper understanding of the interfacial carrier dynamics of 2D-MoS2 materials and the effects of defects on charge carrier lifetime in the SCL.

Direct observation of charge separation in an organic light harvesting system by femtosecond time-resolved XPS

The ultrafast dynamics of photon-to-charge conversion in an organic light-harvesting system is studied by femtosecond time-resolved X-ray photoemission spectroscopy (TR-XPS) at the free-electron laser FLASH. This novel experimental technique provides site-specific information about charge separation and enables the monitoring of free charge carrier generation dynamics on their natural timescale, here applied to the model donor-acceptor system CuPc:C60. A previously unobserved channel for exciton dissociation into mobile charge carriers is identified, providing the first direct, real-time characterization of the timescale and efficiency of charge generation from low-energy charge-transfer states in an organic heterojunction. The findings give strong support to the emerging realization that charge separation even from energetically disfavored excitonic states is contributing significantly, indicating new options for light harvesting in organic heterojunctions.

Femtosecond time-resolved spectroscopic photoemission electron microscopy for probing ultrafast carrier dynamics in heterojunctions

The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a time-resolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.

Femtosecond time-resolved photoemission electron microscopy operated at sample illumination from the rear side.

We present an advanced experimental setup for time-resolved photoemission electron microscopy (PEEM) with sub-20 fs resolution, which allows for normal incidence and highly local sample excitation with ultrashort laser pulses. The scheme makes use of a sample rear side illumination geometry that enables us to confine the sample illumination spot to a diameter as small as 6 µm. We demonstrate an operation mode in which the spatiotemporal dynamics following a highly local excitation of the sample is globally probed with a laser pulse illuminating the sample from the front side. Furthermore, we show that the scheme can also be operated in a time-resolved normal incidence two-photon PEEM mode with interferometric resolution, a technique providing a direct and intuitive real-time view onto the propagation of surface plasmon polaritons.

Excitation and Relaxation Dynamics of the Photo-Perturbed Correlated Electron System 1T-TaS2

We investigate the perturbation and subsequent recovery of the correlated electronic ground state of the Mott insulator 1T-TaS 2 by means of femtosecond time-resolved photoemission spectroscopy in normal emission geometry. Upon an increase of near-infrared excitation strength, a considerable collapse of the occupied Hubbard band is observed, which reflects a quench of short-range correlations. It is furthermore found that these excitations are directly linked to the lifting of the periodic lattice distortion which provides the localization centers for the formation of the insulating Mott state. We discuss the observed dynamics in a localized real-space picture.

Unraveling Spatially Heterogeneous Ultrafast Carrier Dynamics of Single-Layer WSe2 by Femtosecond Time-Resolved Photoemission Electron Microscopy.

Studies of the ultrafast carrier dynamics of transition metal dichalcogenides have employed spatially averaged measurements, which obfuscate the rich variety of dynamics that originate from the structural heterogeneity of these materials. Here, we employ femtosecond time-resolved photoemission electron microscopy (TR-PEEM) with sub-80 nm spatial resolution to image the ultrafast subpicosecond to picosecond carrier dynamics of monolayer tungsten diselenide (WSe2). The dynamics observed following 2.41 eV pump and 3.61 eV probe occurs on two distinct time scales. The 0.1 ps process is assigned to electron cooling via intervalley scattering, whereas the picosecond dynamics is attributed to exciton-exciton annihilation. The 70 fs decay dynamics observed at negative time delay reflects electronic relaxation from the Γ point. Analysis of the TR-PEEM data furnishes the spatial distributions of the various time constants within a single WSe2 flake. The spatial heterogeneity of the lifetime maps is consistent with increased disorder along the edges of the flake and the presence of nanoscale charge puddles in the interior. Our results indicate the need to go beyond spatially averaged time-resolved measurements to understand the influence of structural heterogeneities on the elementary carrier dynamics of two-dimensional materials.

フェムト秒域時間分解光電子分光法によるグラフェンの超高速キャリアダイナミクスの追跡

フェムト秒域時間分解光電子分光法によるグラフェンの超高速キャリアダイナミクスの追跡

Femtosecond time-resolved photoemission electron microscopy for spatiotemporal imaging of photogenerated carrier dynamics in semiconductors.

We constructed an instrument for time-resolved photoemission electron microscopy (TR-PEEM) utilizing femtosecond (fs) laser pulses to visualize the dynamics of photogenerated electrons in semiconductors on ultrasmall and ultrafast scales. The spatial distribution of the excited electrons and their relaxation and/or recombination processes were imaged by the proposed TR-PEEM method with a spatial resolution about 100 nm and an ultrafast temporal resolution defined by the cross-correlation of the fs laser pulses (240 fs). A direct observation of the dynamical behavior of electrons on higher resistivity samples, such as semiconductors, by TR-PEEM has still been facing difficulties because of space and/or sample charging effects originating from the high photon flux of the ultrashort pulsed laser utilized for the photoemission process. Here, a regenerative amplified fs laser with a widely tunable repetition rate has been utilized, and with careful optimization of laser parameters, such as fluence and repetition rate, and consideration for carrier lifetimes, the electron dynamics in semiconductors were visualized. For demonstrating our newly developed TR-PEEM method, the photogenerated carrier lifetimes around a nanoscale defect on a GaAs surface were observed. The obtained lifetimes were on a sub-picosecond time scale, which is much shorter than the lifetimes of carriers observed in the non-defective surrounding regions. Our findings are consistent with the fact that structural defects induce mid-gap states in the forbidden band, and that the electrons captured in these states promptly relax into the ground state.

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.

Electron–phonon coupling in 122 Fe pnictides analyzed by femtosecond time-resolved photoemission

Based on the results from femtosecond time-resolved photoemission, we compare three different methods for the determination of the electron–phonon coupling constant λ in Eu- and Ba-based 122 FeAs compounds. We find good agreement between all three methods, which reveal a small λ < 0.2. This makes simple electron–phonon-mediated superconductivity unlikely in these compounds.

Ultrafast Dynamics of Photo-Excited Nano-Structured Metal Surfaces by Femtosecond Time-Resolved Photoemission Electron Microscopy

Ultrafast Dynamics of Photo-Excited Nano-Structured Metal Surfaces by Femtosecond Time-Resolved Photoemission Electron Microscopy

Electron solvation and solvation-induced crystallization of an ammonia film on Ag(111) studied by 2-photon photoemission

Intermolecular interaction plays a crucial role in electron solvation in the condensed phase. Here, we present a femtosecond time-resolved and angle-resolved 2-photon photoemission (2PPE) study on the dynamics of electron solvation in a 2-dimensional ammonia film on a metal substrate. While the weakly chemisorbed first monolayer (ML) supports delocalized image-potential (IP) states that resemble those of the bare Ag(111) substrate, an additional monolayer localizes the IP state with a larger binding energy obtained through a pre-solvation process. Structural disorder in the metastable ammonia films (>2 ML) leads to a prominent photoelectron peak that is attributed to the long-lived trapped electron state (e(T)) located at 1.5 eV above the Fermi level. Photoinduced crystallization of the metastable phase, verified by the recovery of a delocalized IP state, is suggested to result from inelastic scattering between interfacial electrons and disordered ammonia molecules.

Ultrafast Melting of a Charge-Density Wave in the Mott Insulator1T−TaS2

Femtosecond time-resolved core-level photoemission spectroscopy with a free-electron laser is used to measure the atomic-site specific charge-order dynamics of the charge-densitywave in the Mott insulator 1T-TaS2. After strong photoexcitation, a prompt loss of charge order and subsequent fast equilibration dynamics of the electron-lattice system are observed. On the time scale of electron-phonon thermalization, about 1ps, the system is driven across a phase transition from a long-range charge ordered state to a quasiequilibrium state with domainlike short-range charge and lattice order. The experiment opens the way to study the nonequilibrium dynamics of condensed matter systems with full elemental, chemical, and atomic-site selectivity.

Dynamics of the Self-Energy of the Gd(0001) Surface State Probed by Femtosecond Photoemission Spectroscopy

Transient changes of the complex self-energy of the 5d(z2) surface state on Gd(0001) after intense optical excitation are investigated by femtosecond time-resolved photoemission. We observe an ultrafast (<100 fs) broadening of the linewidth due to e-e scattering followed by a decrease of the binding energy due to thermal expansion of the lattice. In addition, we resolve a periodic breathing of the band structure which originates from a coherent phonon. An amplitude of 1 pm is derived from the binding energy shift upon lattice displacement calculated by density functional theory.

Time Evolution of the Electronic Structure of1T−TaS2through the Insulator-Metal Transition

Femtosecond time-resolved photoemission is used to investigate the time evolution of electronic structure in the Mott insulator 1T-TaS2. A collapse of the electronic gap is observed within 100 femtoseconds after optical excitation. The photoemission spectra and the spectral function calculated by dynamical mean field theory show that this insulator-metal transition is driven solely by hot electrons. A coherently excited lattice displacement results in a periodic shift of the spectra lasting for 20 ps without perturbing the insulating phase. This capability to disentangle electronic and phononic excitations opens new directions to study electron correlation in solids.