FeGa Layers Research Articles

Magnetoelastic coupling for Fe–Ga thin films epitaxially grown on different substrates

This paper reports the systematic study on the structure, magnetic properties and magnetoelastic properties for the Fe100−x Ga x (001) thin films epitaxially grown on the different substrates of GaAs(001) and MgO(001) using the sputtering technique. The alloy composition dependence of effective magnetoelastic coupling coefficient B eff along the FeGa [110] direction indicated that the largest magnetoelastic coupling was obtained for the Fe–Ga layer with x = 30 grown on the MgO substrate, which was evaluated to be B eff = − 9.4 × 107 erg cm−3. Considering the results of structural analysis and magnetization measurement, the different crystallite sizes depending on the kind of substrate may give rise to the different magnetoelastic coupling strengths between the Fe–Ga layers on the MgO and the GaAs. The magnetostriction along the Fe–Ga [111] direction λ 111 was also estimated with the assumption of plausible elastic property of Fe–Ga, and showed the values comparable to the reported value of bulk Fe–Ga. This means the large magnetostriction can be obtained even for the Fe–Ga thin films epitaxially grown not only on the GaAs(001) but also on the MgO(001). The findings in this work will give a guideline for designing spintronic applications with a Fe–Ga layer exhibiting a large magnetoelastic coupling.

Enhancement of magnetoelectric coupling in laminate composites of textured Fe–Ga thin sheet and PZT

Magneto-mechano-electric (MME) generators consisting of piezoelectric and magnetostrictive materials can convert the stray magnetic noise to useful electric energy for the wireless sensor networks utilizing the magnetoelectric coupling effect and magnetic interactions. In this paper, a scalable engineering approach was proposed to fabricate the laminate MME generator composed of a PZT/Fe–Ga/PZT sandwich structure. The Goss-oriented Fe81Ga19 thin sheet with a large magnetostriction of 244 ppm was produced by a simple and low-cost approach, and the commercial polycrystalline piezoelectric ceramic products (PZT-5H) were used as the PZT layers. The effect of grain orientation, device structure, magnetic field amplitude, and resonance frequency on the electrical output of the PZT/Fe–Ga/PZT MME generator was investigated. The electrical output of the MME generator containing the Goss-oriented Fe81Ga19 thin sheet reached an AC voltage of 4.58 V and the ME coefficient of 76.33 V/cm·Oe under a low excitation magnetic field of 26 Oe at a low resonance frequency of 26 Hz. The MME generator with a Goss-oriented Fe–Ga layer shows 4.7 times higher output voltage and ME coupling coefficient than that with the no-oriented polycrystalline Fe–Ga layer, but only 81% of the latter’s resonance frequency. This is related to the significant increase in magnetostriction due to the texture transition after secondary recrystallization annealing at the temperature of 950 °C. This paper provides a very promising solution to meet the self-power supply needs of the Internet of Things utilizing low-value and low-frequency magnetic fields.

Multilayering FeGa with NiFe and Al2O3 to enhance the soft magnetic properties

In this study, the impact of insulating Al2O3 interlayers on the static and dynamic magnetic properties of FeGa/NiFe multilayers was investigated. A multilayer structure consisting of ten (10 nm FeGa)/(2.5 nm NiFe) bilayers was first established to show a reduction in coercivity and high frequency losses compared to a single (100 nm FeGa)/(2.5 nm NiFe) bilayer, which itself shows better performance than a single 100 nm FeGa film. By strategically placing 2.5 nm Al2O3 interlayers in the FeGa/NiFe multilayers (after the FeGa layer but before the next NiFe layer), the composite displayed a reduced coercivity down to 3 Oe while retaining a strong uniaxial anisotropy. Due to the effectiveness of these ultra-thin Al2O3 layers in reducing the eddy current losses across the FeGa/NiFe multilayer stack, this multilayer structure exhibited excellent performance at high frequency, including a gilbert damping coefficient of 0.0081 and an inhomogeneous linewidth of 38 Oe. These results demonstrate that Al2O3 interlayers can improve the soft magnetic properties of (FeGa/NiFe)-based multilayers to enable integration in magnetoelastic and high frequency applications.

Magnetic properties of FeGa/FeCo bilayer

In this work, we investigated a series of polycrystalline FeGa/FeCo bilayers with different FeGa thicknesses fabricated by radio-frequency magnetron sputtering. The bilayers exhibit an in-plane anisotropy since an external magnetic field is applied in the plane of bilayers when FeGa layer is deposited. The grain size and the total saturation magnetization (4πMS) of FeGa/FeCo bilayers change with the increase of the thickness of the FeGa layer. In addition, the in plane and out-of-plane angle variation of resonance spectra are obtained by electron spin resonance measurement, indicating that the magnetic resonance field and the saturation magnetization of the FeGa and FeCo layer can be affected by the thickness of the FeGa layer respectively.

Magnetic anisotropy and reversal in epitaxial FeGa/IrMn bilayers with different orientations of exchange bias

Epitaxial FeGa/IrMn bilayers with exchange biases along the FeGa[100] and [110] directions are prepared on MgO(001) single crystal substrates by magnetron sputtering through controlling the orientation of the external field <i>in situ</i> applied during growth. The effect of the exchange bias orientation on the magnetic switching process and the magnetic switching field are studied. The X-ray <i>φ</i>-scan indicates that the FeGa layer is epitaxially grown with a 45° in-plane rotation on the MgO(001) substrate along the FeGa(001)[110] direction and the MgO(001)[100] direction. The measurements of the angular dependence of the ferromagnetic resonance field and the corresponding fitting to the Kittel equation show that the samples have a superposition of fourfold symmetric magnetocrystalline anisotropy <inline-formula><tex-math id="M4">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.png"/></alternatives></inline-formula>, unidirectional magnetic exchange bias anisotropy <inline-formula><tex-math id="M5">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.png"/></alternatives></inline-formula>, and uniaxial magnetic anisotropy <inline-formula><tex-math id="M6">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.png"/></alternatives></inline-formula> with configuration of <inline-formula><tex-math id="M7">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.png"/></alternatives></inline-formula> or <inline-formula><tex-math id="M8">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.png"/></alternatives></inline-formula>. The combined longitudinal and transverse magneto-optical Kerr effect measurements show that sample with <inline-formula><tex-math id="M9">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.png"/></alternatives></inline-formula> exhibits square loops, asymmetrically shaped loops, and one-sided two-step loops in different external magnetic field directions. In contrast, the sample with <inline-formula><tex-math id="M10">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.png"/></alternatives></inline-formula> exhibits one-sided two-step and two-sided two-step loops as the magnetic field orientation changes. Because the <inline-formula><tex-math id="M11">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.png"/></alternatives></inline-formula> is superimposed by <inline-formula><tex-math id="M12">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.png"/></alternatives></inline-formula> and <inline-formula><tex-math id="M13">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.png"/></alternatives></inline-formula>, the in-plane fourfold symmetry of the magnetic anisotropy energy is broken. The local minima are no longer strictly along the in-plane <inline-formula><tex-math id="M14">\begin{document}$ \left\langle{100}\right\rangle $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.png"/></alternatives></inline-formula> directions, but make a deviation angle which depends on the relative orientation and strength of magnetic anisotropy. A model based on the domain wall nucleation and propagation is proposed with considering the different orientations of <inline-formula><tex-math id="M15">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.png"/></alternatives></inline-formula>, which can nicely explain the change of the magnetic switching route with the magnetic field orientation and fit the angular dependence of the magnetic switching fields, indicating a significant change of domain wall nucleation energy as the orientation of <inline-formula><tex-math id="M16">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.png"/></alternatives></inline-formula> changes.

Synthetic domain walls in [TbFeGa/TbFe]2 multilayers

Here we report the possibility of creating synthetic domain walls in nominal [Fe72Ga28/Tb33Fe67]2 multilayers. The magnetization as a function of the temperature reveals the absence of Compensation temperature in the samples which can be understood considering an interdiffusion process that results in the formation of TbFeGa alloys at the nominal FeGa layers. Therefore, samples actually comprise TbFeGa and TbFe layers. The hysteresis loops exhibit magnetization steps related to the nucleation of domain walls formed because of the competition between different interactions: (i) the antiferromagnetic exchange coupling between the heavy rare earth (Tb) and the transition magnetic metal (Fe) inside each layer, (ii) the antiferromagnetic coupling between Tb and Fe at the interfaces, and (iii) the Zeeman energy. In good agreement with the experimental values, the nucleation field of the domain walls has been theoretically calculated taking into account the tilt of the magnetization with respect to the sample plane. Our experimental results indicate that by a proper thickness adjustment, it can be tuned, both the value of the nucleation field and the layer in which this firstly occurs. Experimental values for the exchange bias field have also been calculated.

Unveiling the Different Physical Origins of Magnetic Anisotropy and Magnetoelasticity in Ga-Rich FeGa Thin Films

The aim of this work is to clarify how in-plane magnetic anisotropy and magnetoelasticity depend on the thickness of Ga-rich FeGa layers. Samples with an Fe72Ga28 composition were grown by sputtering in the ballistic regime in oblique incidence. Although for these growth conditions uniaxial magnetic anisotropy could be expected, in-plane anisotropy is only present when the sample thickness is above 100 nm. By means of differential X-ray absorption spectroscopy, we have determined the influence of both Ga pairs and tetragonal cell distortion on the evolution of the magnetic anisotropy with the increase of FeGa thickness. On the other hand, we have used the cantilever beam technique with capacitive detection to also determine the evolution of the magnetoelastic parameters with the thickness increase. In this case, experimental results can be understood considering the grain distribution. Therefore, the different physical origins for anisotropy and magnetoelasticity open up the possibility to independently tune these two characteristics in Ga-rich FeGa films.

Strain gradient mediated magnetoelectricity in Fe-Ga/P(VDF-TrFE) multiferroic bilayers integrated on silicon

The primary advantage of magnetoelectric heterostructures exhibiting direct magnetoelectric effect is the possibility to induce and modulate the electrical response of the ferroelectric phase directly with an external magnetic field (i.e., wirelessly, without applying electric field). Nevertheless, the magnetoelectric coupling in such heterostructures is commonly limited by substrate clamping which hinders effective strain propagation. In this work, 1 μm thick ferromagnetic Fe-Ga layers were electrodeposited onto rigid Si/Cu substrates and subsequently coated with ferroelectric P(VDF-TrFE). Under magnetic field, the (110) textured Fe-Ga alloy is compressed along the z-direction by 0.033%, as demonstrated by X-ray diffraction. The experimental results suggest that while the bottom of the Fe-Ga layer is clamped, its air side exhibits a pronounced tetragonal deformation thanks to the residual nanoporosity existing between the columnar grains, that is, a strain gradient develops across the thickness of the Fe-Ga film. This strain gradient in Fe-Ga induces a change in the piezoresponse of the adjacent ferroelectric P(VDF-TrFE) layer. These results pave the way to the design of high-performance microelectromechanical systems (MEMS) with magnetoelectric response integrated on rigid substrates.

Enhancement of ultrafast demagnetization rate and Gilbert damping driven by femtosecond laser-induced spin currents in Fe81Ga19/Ir20Mn80 bilayers

In spintronics applications, ultrafast spin dynamics have to be controlled at femtosecond (fs) timescales via fs-laser radiation. At such ultrafast timescales, the effect of the Gilbert damping factor {\alpha} on ultrafast demagnetization time should be considered. In previous explorations for the relationship between these two parameters, it was found that the theoretical calculations based on the local spin-flip scattering model do not agree with the experimental results. Here, we find that in Fe81Ga19(FeGa)/Ir20Mn80(IrMn) bilayers, the unconventional IrMn thickness dependence of {\alpha} results from the competition between spin currents pumped from the ferromagnetic (FM) FeGa layer to the antiferromagnetic (AFM) IrMn layer and those pumped from the AFM layer to the FM layer. More importantly, we establish a proportional relationship between the change of the ultrafast demagnetization rate and the enhancement of Gilbert damping induced by the spin currents via interfacial spin chemical potential . Our work builds a bridge to connect the ultrafast demagnetization time and Gilbert damping in ultrafast photo-induced spin currents dominated systems, which not only explains the disagreement between experimental and theoretical results in the relation of {\tau}_M with {\alpha}, but provides further insight into ultrafast spin dynamics as well.

Tuning the magnetic anisotropy of Ga-rich FeGa thin films deposited on rigid substrates

We have investigated the possibility of growing on outward bent rigid substrates to create an in-plane magnetic anisotropy in Ga-rich FeGa layers grown in the diffusive flow that in principle are expected to be magnetically isotropic in the sample plane when using non-bent rigid substrates. In this work, samples were grown by sputtering in the diffusive regime in rigid outward bent substrates, i.e. substrates under tensile stress. After the growth of the layers, the release of the substrate promotes a compression in the sample plane confirmed by x-ray diffractometry. This compression strain induces a uniaxial magnetic anisotropy axis in the sample plane perpendicular to the mechanical stress as expected for a material with a positive magnetostriction. Moreover, a value of 73 ppm for the magnetostriction constant has been inferred from the magnetic anisotropy measurements in the as-grown layer. A thermal treatment at a moderate temperature of 300 °C partially release the strain, but it does not modify the magnetic anisotropy either in magnitude or direction.

Electromagnetic induced voltage signal to magnetic variation through torquing textured Fe81Ga19 alloy

The results of a study on the suitability of Fe-Ga alloys for torque sensor applications are presented. A Fe81Ga19 rod with a ⟨100⟩ preferred orientation along the length direction is prepared for the torque shaft and as the electromagnetic induction sensitive element, which is wound with three coils for signal excitation, signal pickup, and applied bias magnetic field, respectively. An apparent decrease in the induced voltage signal (peak voltage) of 3.88 mV is observed as the torque loading is 50 N m in the presence of a sine excitation signal (10 V, 1 kHz) and a bias current of 0.5 A. Meanwhile, a good repeatability and stress sensitivity are obtained, especially in the low torque range. These behaviors stem from the stress induced decrease in the magnetic permeability and the rotation of the arranged magnetic moment. Here, we use the Fe81Ga19 alloy as the shaft material; nevertheless, in practical use, the same effect can be achieved by forming a Fe-Ga layer with large magnetostriction on the surface of the torsion shaft. This work shows the prospect of Fe-Ga alloys for non-contact torque sensing, for the large magnetostriction and high sensitivity of magnetization to stress.

Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

In this paper we analyze the structure of Fe-Ga layers with a Ga content of \ensuremath{\sim}30 at.% deposited by the sputtering technique under two different regimes. We also studied the correlation between the structure and magnetic behavior of the samples. Keeping the Ar pressure fixed, we modified the flow regime from ballistic to diffusive by increasing the distance between the target and the substrate. X-ray diffraction measurements have shown a lower structural quality when growing in the diffusive flow. We investigated the impact of the growth regime by means of x-ray absorption fine structure (XAFS) measurements and obtained signs of its influence on the local atomic order. Full multiple scattering and finite difference calculations based on XAFS measurements point to a more relevant presence of a disordered $A2$ phase and of orthorhombic Ga clusters on the Fe-Ga alloy deposited under a diffusive regime; however, in the ballistic sample, a higher presence of $D{0}_{3}/B2$ phases is evidenced. Structural characteristics, from local to long range, seem to determine the magnetic behavior of the layers. Whereas a clear in-plane magnetic anisotropy is observed in the film deposited under ballistic flow, the diffusive sample is magnetically isotropic. Therefore, our experimental results provide evidence of a correlation between flow regime and structural properties and its impact on the magnetic behavior of a rather unexplored compositional region of Fe-Ga compounds.

Giant magnetoimpedance effect in Fe75.5Cu1Nb3Si13.5B7 ribbon/FeGa film composite

Optimized giant magnetoimpedance effect of Fe75.5Cu1Nb3Si13.5B7 amorphous ribbon/Fe80Ga20 film composites has been investigated. FeCuNbSiB amorphous ribbons as the substrates are commercially available, magnetostrictive FeGa films are deposited on one or both sides of the ribbons by ion-beam sputtering. Compared with the GMI curves without FeGa layer, the GMI effect of FeCuNbSiB amorphous ribbon has been obviously improved with FeGa film covered (from 4% to 16%). Moreover, the details exhibit an interesting phenomenon: at a certain frequency, when the FeGa film covered on one side of the ribbon, the GMI ratio decreases with the thickness of the FeGa film; however, when the FeGa films covered on both sides of the ribbon, the GMI ratio increases with the thickness of the FeGa film. We mainly attribute the reason to strain-induced anisotropy, which is induced by magnetostrictive effect under a longitudinal applied magnetic field.

Surface morphology and magnetic property of wrinkled FeGa thin films fabricated on elastic polydimethylsiloxane

We investigated the surface morphology and the magnetic property of wrinkled Fe81Ga19 (FeGa) thin films fabricated in two different processes onto elastic polydimethylsiloxane (PDMS) substrates. The films obtained by directly depositing Ta and FeGa layers on a pre-strained PDMS substrate display a sinusoidally wrinkled surface and a weak magnetic anisotropy. The wavelength and amplitude of the sinusoidal morphology linearly increase with the metallic layer thickness, while the magnetic anisotropy decreases with increasing FeGa thickness. The other films grown by depositing FeGa layer on a wrinkled Ta/PDMS surface show a remarkable uniaxial magnetic anisotropy. The strength of magnetic anisotropy increases with increasing FeGa thickness. The magnetic anisotropy can be ascribed to the surface anisotropy, the magnetostrictive anisotropy, and the shape anisotropy caused, respectively, by the magnetic charges on wavy morphology, the residual mechanical stress, and the inhomogeneous thickness of FeGa films.

Magnetization reversal in epitaxial exchange-biased IrMn/FeGa bilayers with anisotropy geometries controlled by oblique deposition

We fabricated epitaxial exchange biased (EB) IrMn/FeGa bilayers by oblique deposition and systematically investigated their magnetization reversal. Two different configurations with the uniaxial magnetic anisotropy ${K}_{u}$ parallel and perpendicular to the unidirectional anisotropy ${K}_{eb}$ were obtained by controlling the orientation of the incident FeGa beam during deposition. A large ratio of ${K}_{u}/{K}_{eb}$ was obtained by obliquely depositing the FeGa layer to achieve a large ${K}_{u}$ while reducing the IrMn thickness to obtain a small ${K}_{eb}$. Besides the previously reported square loops, conventional asymmetrically shaped loops, and one-sided and two-sided two-step loops, unusual asymmetrically shaped loops with a three-step magnetic transition for the descending branch and a two-step transition for the ascending branch and biased three-step loops were observed at various field orientations in the films of both IrMn (${t}_{\mathrm{IrMn}}=1.5$ to 20 nm)/FeGa (10 nm) with ${K}_{u}\ensuremath{\perp}{K}_{eb}$ and IrMn (${t}_{\mathrm{IrMn}}\ensuremath{\le}2$ nm)/FeGa (10 nm) with ${K}_{u}||{K}_{eb}$. Considering the geometries of anisotropies, a model based on domain wall nucleation and propagation was employed to quantitatively describe the angular dependent behaviors of IrMn/FeGa bilayers. The biased three-step magnetic switching was predicted to take place when $|{K}_{u}|>{\ensuremath{\varepsilon}}_{{90}^{\ensuremath{\circ}}}+{K}_{eb}$, where ${\ensuremath{\varepsilon}}_{{90}^{\ensuremath{\circ}}}$ is the 90\ifmmode^\circ\else\textdegree\fi{} domain wall nucleation energy, and the EB leads to the appearance of the unusual asymmetrically shaped hysteresis loops.

Evaluation of high‐sensitivity FeGa/PZT stacked‐layer magnetic sensor

AbstractAn FeGa/PZT stacked‐layer magnetic sensor was studied. The prototype sensor was 15 mm long and 6 mm wide with two 880‐μm‐thick FeGa layers and a 590‐μm‐thick PZT layer. The theoretical sensitivity using a simple model was calculated to be 69.6 mV/Oe. The resonant modes were analyzed using an FEM simulator, resulting in a fundamental resonant frequency of 5.38 kHz. A magnetic field was applied to the longitudinal direction of the fabricated sensor to cause longitudinal stress magnetostrictively, which produced a piezoelectric output voltage in the PZT layer. The dependence of the magnetic sensitivity on the DC bias magnetic field was evaluated, together with the frequency characteristics and the temperature dependence. The measured sensitivity roughly agreed with the calculated one. A prototype with a single magnetostrictive layer was also fabricated and evaluated to investigate the possibility of operation as a resonant sensor. © 2012 Wiley Periodicals, Inc. Electron Comm Jpn, 95(5): 1–7, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.11392

Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

We have analyzed the structural and magnetic properties of as-grown and annealed [TbFe2/Fe3Ga]n heterostructures grown by sputtering. Evidence of the bcc structure in the Fe3Ga layers has been found. The diffraction peak related to this structure shifts to high angles with the annealing temperature. Also, we have observed a change in the microstructure of the Tb-Fe layers when the thickness layer is reduced in the as-grown heterostructures. Moreover, the Tb content is lower than 33% of the TbFe2 Laves phase and it depends on the layer thickness. The thermal treatments promote the increase of the Tb content, but only in the heterostructures with thick layers. The strong lattice mismatch between the Tb-Fe and Fe-Ga layers seems to prevent a complete Tb diffusion upon the annealing process. Thus, the crystallization of the TbFe2 Laves phase is inhibited in the heterostructures with thin layers, although our experimental results indicate the presence of potential magnetostrictive TbFeGa alloys.

Evaluation of High-Sensitivity FeGa/PZT Stacked-Layer Magnetic Sensor

The FeGa/PZT stacked-layer magnetic sensor was studied. The prototype sensor is 15mm long and 6mm wide with two 880μm-thick FeGa layers and a 590μm-thick PZT layer. The theoretical sensitivity using a simple model was calculated to be 69.6mV/Oe. The resonant modes were analyzed using a FEM simulator, resulting in the fundamental resonant frequency of 5.38kHz. A magnetic field was applied to the longitudinal direction of the sensor to cause a longitudinal stress magnetostrictively, which produces a piezoelectric output voltage in the PZT layer. The dependences of the magnetic sensitivity on the DC bias magnetic field were evaluated, together with the frequency characteristics and the temperature dependences. The measured sensitivity agreed roughly with the calculated one. A prototype with a single magnetostrictive layer was also fabricated and evaluated for investigating the possibility of the resonant sensor.