Thin silicon nitride/oxynitride films were deposited on silicon substrates by a soft vacuum electron beam plasma assisted deposition in a triad gas feedstock mixture of silane, ammonia, and nitrogen. Fourier transform infrared spectra, x-ray photoelectron spectra, Auger electron spectra, and secondary ion mass spectra of these thin films were analyzed and compared to determine both the bulk chemical composition and the interfacial properties. Film composition varied from SiO2 to Si3N4 as the substrate temperature (Ts) varied from 50 to 450 °C. Between 150 and 350 °C a stable SiOxNyHz structure formed. The films deposited with NH4–SiH4–N2 mixtures contained large (20%–60%) amounts of N–H bonds, but no detectable Si–H bonds (<0.5%). The total hydrogen content of deposited films decreased by a factor of 10 (to 2%–3%) when only nitrogen and silane were used as source gases, in comparison with that obtained using the triad feedstock mixture.
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