Fe3GeTe2 Research Articles

All-in-One Magneto-optical Memory Arrays Based on a Two-Dimensional Ferromagnetic Metal.

Two-dimensional (2D) van der Waals (vdW) magnetic materials with atomic-scale thickness and smooth interfaces promise the possibility of developing high-density, energy-efficient spintronic devices. However, it remains a challenge to effectively control the perpendicular magnetic anisotropy (PMA) of 2D vdW ferromagnetic materials, as well as the integration of multiple memory cells. Here, we report highly efficient magneto-optical memory arrays by utilizing the huge spin-orbit torques (SOT) induced by the in-plane current in Fe3GeTe2 (FGT) flake. The device is constructed from individual FGT flakes without heavy metal assistance and allows for a low current density. The magneto-optical memory arrays implement nonvolatile memories for three bits and can be repeatedly scrubbed for "writing" and "reading". Besides, we show that FGT nanoflakes possess current-controlled volatile switching behavior at zero magnetic field. These results provide a solution for the next generation of all-vdW-scalable, high-performance spintronic logic devices and SOT-Magnetic Random Access Memory (MRAM).

Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet

AbstractThe discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all‐van der Waals FGT/O‐FGT/hBN heterostructure is demonstrated. The antiferromagnetic O‐FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage‐controlled magnetization switching, highlighting the potential of FGT‐based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high‐performance magnetic devices.

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe3GeTe2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT’s Curie temperature, TC, through adjustments in quintuple layer numbers (QL) and carrier concentrations, n. However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.

Opening the Hysteresis Loop in Ferromagnetic Fe3GeTe2 Nanosheets Through Functionalization with TCNQ Molecules.

Ferromagnetic metal Fe3GeTe2 (FGT), whose structure exhibits weak van-der-Waals interactions between 5-atom thick layers, was subjected to liquid-phase exfoliation (LPE) in N-methyl pyrrolidone (NMP) to yield a suspension of nanosheets that were separated into several fractions by successive centrifugation at different speeds. Electron microscopy confirmed successful exfoliation of bulk FGT to nanosheets as thin as 6 nm. The ferromagnetic ordering temperature for the nanosheets gradually decreased with the increase in the centrifugation speed used to isolate the 2D material. These nanosheets were resuspended in NMP and treated with an organic acceptor, 7,7,8,8-tetracyano-quinodimethane (TCNQ), which led to precipitation of FGT-TCNQ composite. The formation of the composite material is accompanied by charge transfer from the FGT nanosheets to TCNQ molecules, generating TCNQ•- radical anions, as revealed by experimental vibrational spectra and supported by first principles calculations. Remarkably, a substantial increase in magnetic anisotropy was observed, as manifested by the increase in the coercive field from nearly zero in bulk FGT to 1.0 kOe in the exfoliated nanosheets and then to 5.4kOe in the FGT-TCNQ composite. The dramatic increase in coercivity of the composite suggests that functionalization with redox-active molecules provides an appealing pathway to enhancing magnetic properties of 2D materials.

Opening the Hysteresis Loop in Ferromagnetic Fe3GeTe2 Nanosheets Through Functionalization with TCNQ Molecules

Ferromagnetic metal Fe3GeTe2 (FGT), whose structure exhibits weak van‐der‐Waals interactions between 5‐atom thick layers, was subjected to liquid‐phase exfoliation (LPE) in N‐methyl pyrrolidone (NMP) to yield a suspension of nanosheets that were separated into several fractions by successive centrifugation at different speeds. Electron microscopy confirmed successful exfoliation of bulk FGT to nanosheets as thin as 6 nm. The ferromagnetic ordering temperature for the nanosheets gradually decreased with the increase in the centrifugation speed used to isolate the 2D material. These nanosheets were resuspended in NMP and treated with an organic acceptor, 7,7,8,8‐tetracyano‐quinodimethane (TCNQ), which led to precipitation of FGT‐TCNQ composite. The formation of the composite material is accompanied by charge transfer from the FGT nanosheets to TCNQ molecules, generating TCNQ•– radical anions, as revealed by experimental vibrational spectra and supported by first principles calculations. Remarkably, a substantial increase in magnetic anisotropy was observed, as manifested by the increase in the coercive field from nearly zero in bulk FGT to 1.0 kOe in the exfoliated nanosheets and then to 5.4 kOe in the FGT‐TCNQ composite. The dramatic increase in coercivity of the composite suggests that functionalization with redox‐active molecules provides an appealing pathway to enhancing magnetic properties of 2D materials.

Enhanced magnetism derived from pore-edge spins in thin Fe3GeTe2 nanomeshes

The growth of two-dimensional van der Waals magnetic materials presents attractive opportunities for exploring new physical phenomena and valuable applications. Among these materials, Fe3GeTe2(FGT) exhibits a variety of remarkable properties and has garnered significant attention. Herein, we have for the first time created a nanomesh structure-a honeycomb-like array of hexagonal nanopores-with the zigzag pore-edge atomic structure on thin FGT flakes with and without oxidation of the pore edges. It is revealed that the magnitude of ferromagnetism (FM) significantly increases in both samples compared with bulk flakes without nanomeshes. Critical temperature annealing results in the formation of zigzag pore edges and interpore zigzag-edge nanoribbons. We unveil that the non-oxide (O) termination of the Fe dangling bonds on these zigzag edges enhances FM behavior, while O-termination suppresses this FM by introducing antiferromagnetic behavior through edge O-Fe coupling. FGT nanomeshes hold promise for the creation of strong FM and their effective application in magnetic and spintronic systems.

Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spintronic devices are regarded as prime candidates for addressing the demands of emergent applications such as in-memory computing and the Internet of Things, characterized by requirements for high speed, low energy consumption, and elevated storage density. Among these, spin valves, serving as fundamental structures of magnetic random-access memory, have garnered substantial attention in recent years. This study introduces an all van der Waals (vdW) heterostructure composed of Fe3GeTe2 (FGT)/tellurene/FGT, wherein a thin layer of Weyl semiconductor Te is interposed between two ferromagnetic FGT layers. The proposed configuration exhibits a characteristic spin valve effect at temperatures below 160 K. This effect is attributed to spin-dependent transport and spin-dependent scattering phenomena occurring at the interfaces of the constituent materials. Furthermore, as temperature decreases, the magnetoresistance ratio (MR) of the device increases, indicative of the heightened polarization ratio of FGT, with an MR of 0.43% achievable as the temperature approaches 5 K. This investigation elucidates the underlying operational mechanisms of two-dimensional spin valve devices and lays the groundwork for the realization of spin-based integrated circuits.

Magnetic ferroelectric metal in bilayer Fe3GeTe2 under interlayer sliding

The inherent interlayer freedom in van der Waals stacked materials provides an excellent opportunity to investigate ferroelectric-like behavior through interlayer translation. Based on first-principles calculations, we find that the interlayer sliding in Fe3GeTe2 (FGT) bilayer enables the coexistence of polarization, metallicity, and ferromagnetism. We find that the polarization is induced by the uncompensated vertical interlayer charge transfer, and can be switched by an in-plane interlayer sliding. A moderate biaxial strain can reverse the polarization direction of the sliding FGT bilayer. The vertical polarization disentangles with the in-plane conductivity as was previously seen in the sliding ferroelectric WTe2 bilayer. Our work proposes an extremely rare magnetic ferroelectric metal phase that is useful for magnetoelectric and spintronic applications.

The effects of thickness, polarization, and strain on vibrational modes of 2D Fe3GeTe2

In this study, we investigated the effects of thickness, light polarization, and strain on the Raman spectra of two-dimensional (2D) Fe3GeTe2 (FGT) crystals synthesized via chemical vapor transport. The crystals are thoroughly characterized using a combination of microscopic, diffraction, and spectroscopic techniques. Particularly, a systematic angle-resolved polarized Raman spectroscopy study reveals a clear polarization dependence of the Raman intensity in both parallel and crossed polarization directions, with the Ag1 mode completely disappearing in the crossed polarization direction. The angle-dependent intensity of both the Ag1 and E2g2 modes in parallel polarization and the intensity of the E2g2mode in the crossed polarization remain constant at all angles. These findings align with predictions from Raman tensor analysis, providing compelling evidence for the unambiguous assignment of the Ag1 and E2g2 modes to specific peaks observed in the Raman spectrum of FGT, resolving existing confusion in the literature regarding their assignment. Furthermore, we examined the effect of strain on the Raman spectrum of 2D FGT in-situ using a bending device. Our study, conducted on a monolayer to few-layer 2D FGT deposited onto polyethylene terephthalate and subjected to outward (inward), i.e., tensile (compressive) bending, demonstrates appreciable downshifting (upshifting) of the Raman peak position of both Ag1 and E2g2 modes. These findings are particularly significant given that strain engineering represents an effective approach to modulate the magnetic properties of FGT and other 2D magnetic materials.

High-temperature Néel skyrmions in Fe3GaTe2 stabilized by Fe intercalation into the van der Waals gap

Two-dimensional (2D) van der Waals (vdW) magnets that exhibit ferromagnetism at ambient temperature show great promise for spintronic applications. However, until now, only a few pristine or doped 2D magnets have demonstrated the ability to host non-collinear spin textures, thereby limiting their potential applications. Here we directly observe Néel-type skyrmions in the metallic vdW magnetic compound Fe3GaTe2 (FGaT) up to temperatures well above room temperature (≈340 K) in the absence of any external magnetic field. We show that the presence of defects in the structure of FGaT make its structure acentric and therefore compatible with hosting skyrmions that would otherwise not be possible. Indeed, in this regard it is very similar to the closely related compound Fe3GeTe2 (FGT), whose structure with the same space group P3m1 is also realized by defects. Interestingly, however, FGaT accommodates a significantly higher concentration of Fe within the vdW gaps, likely accounting for its enhanced Curie temperature (TC). In addition to the Néel skyrmions observed in the temperature range of 250–340 K, we also detect type-I and -II Bloch-type skyrmionic bubbles in the temperature range of 100–200 K due to an enhanced magnitude of dipole-dipole interactions relative to the Dzyaloshinskii-Moriya exchange interaction. Self-intercalation is thus a highly interesting property of vdW magnets that considerably modifies their fundamental properties.

Field-free spin–orbit torque switching of magnetic tunnel junction structure based on two-dimensional van der Waals WTe2

In recent years, two-dimensional van der Waals (2D vdWs) heterostructures have attracted great research interest due to their great potential in fundamental physics research and spintronic devices (such as MTJs). Due to its excellent scalability, controllable magnetism and out-of-plane anisotropy, the compact nonvolatile memory controller (NV-MC) based on spintronics is expected to solve the memory bottle-neck problem. At present, a series of in-depth studies have been conducted on advanced 2D vdWs materials, such as MoS2, WSe2, and Fe3GeTe2 (FGT). The results show that the 2D vdWs materials have great TMR value and high SOT switching efficiency, both theoretically reported and experimentally verified. In the paper, a novel MTJ device based on the FGT/WTe2 heterostructure is proposed. In the absence of an external magnetic field, the magnetization direction of the MTJ free layer can still be reversed with certainty when the unipolar write current reaches about 5 mA. Moreover, the DMI effect generated between 2-D material/FM interfaces is also considered, which can promote the performance of SOT-MTJ without the external field. The reading reliability of SOT-MRAM is improved in comparison with the traditional CoFeB-based MTJ device.

Tuning d-Orbital Electronic Structure via Au-Intercalated Two-Dimensional Fe3GeTe2 to Increase Surface Plasmon Activity.

While extensive research has been dedicated to plasmon tuning within non-noble metals, prior investigations primarily concentrated on markedly augmenting the inherently low concentration of free carriers in materials with minimal consideration given to the influence of electron orbitals on surface plasmons. Here, we achieve successful intercalation of Au atoms into the layered structure of Fe3GeTe2 (FGT), thereby exerting control over the orbital electronic states or structure of FGT. This intervention not only amplifies the charge density and electron mobility but also mitigates the loss associated with interband transitions, resulting in increased two-dimensional FGT surface plasmon activity. As a consequence, Au-intercalated FGT detects crystal violet molecules as a surface-enhanced Raman scattering substrate, and the detection lines are 3 orders of magnitude higher than before Au intercalation. Our work provides insight for further studies on plasmon effects and the relation between surface plasmon resonance behavior and electronic structures.

Scanning tunneling microscopy study of epitaxial Fe3GeTe2 monolayers on Bi2Te3

Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows triangular lattices of 390 ± 10 pm for FGT and 430 ± 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 ± 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignment. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a 3 x 3R30∘ reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism measurements confirm these thin FGT films are ferromagnetic with T C ∼190 K.

Interlayer engineering of Fe3GeTe2: From 3D superlattice to 2D monolayer

The discoveries of ferromagnetism down to the atomically thin limit in van der Waals (vdW) crystals by mechanical exfoliation have enriched the family of magnetic thin films [C. Gong et al., Nature 546, 265-269 (2017) and B. Huang et al., Nature 546, 270-273 (2017)]. However, compared to the study of traditional magnetic thin films by physical deposition methods, the toolbox of the vdW crystals based on mechanical exfoliation and transfer suffers from low yield and ambient corrosion problem and now is facing new challenges to study magnetism. For example, the formation of magnetic superlattice is difficult in vdW crystals, which limits the study of the interlayer interaction in vdW crystals [M. Gibertini, M. Koperski, A. F. Morpurgo, K. S. Novoselov, Nat. Nanotechnol. 14, 408-419 (2019)]. Here, we report a strategy of interlayer engineering of the magnetic vdW crystal Fe3GeTe2 (FGT) by intercalating quaternary ammonium cations into the vdW spacing. Both three-dimensional (3D) vdW superlattice and two-dimensional (2D) vdW monolayer can be formed by using this method based on the amount of intercalant. On the one hand, the FGT superlattice shows a strong 3D critical behavior with a decreased coercivity and increased domain wall size, attributed to the co-engineering of the anisotropy, exchange interaction, and electron doping by intercalation. On the other hand, the 2D vdW few layers obtained by over-intercalation are capped with organic molecules from the bulk crystal, which not only enhances the ferromagnetic transition temperature (TC), but also substantially protects the thin samples from degradation, thus allowing the preparation of large-scale FGT ink in ambient environment.

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching.

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30K.

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve.

The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information. In this paper, a novel Magnetic Tunnel Junction (MTJ) based Spin-Orbital Torque Magnetic Random Access Memory (SOT-MRAM) composed of Fe3GeTe2 (FGT) is employed as a storage medium in the computer architecture. On the basis of the analysis of the fundamentals, model configuration, characteristics and performance advantages of the FGT based SOT device, a hybrid storage (L1, L2, Last Level Cache) is constructed, with FGT-SOT-MRAM, conventional SOT-MRAM and STT-MRAM replacing the original static random access memory (SRAM) in the novel triple-level CPU cache architecture. This can override the increasing leakage problem of SRAM, while opening up the application of two-dimensional van der Waals ferromagnets in computer systems at the L1 cache level. Meanwhile, an innovative cache optimization scheme is put forward for magnetic memory to better match the performance of FGT-SOT-MRAM to CPU. The simulation results demonstrate that the FGT-based MRAM can achieve up to 38.03% IPC optimization and 53.41% power optimization in the CPU cache system in contrast to the conventional ones.

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.

The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer's superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics' properties and the achievement of spin-based integrated circuits.

Modulating the ferromagnetism of Fe3GeTe2 with 3d transition metal adsorption and strain-engineering

Two-dimensional ferromagnetic materials hold great promise to develop energy-efficient magnetoelectric memory devices and next-generation spintronics. However, one of the crucial challenges for these materials is the realization of tunable magnetocrystalline anisotropy (MCA) to balance thermal stability and energy efficiency. Here, we systematically study the adsorption effects of 3d transition metals (3d-TMs) on the electronic structure and magnetic property of the Fe3GeTe2 (FGT) monolayer. The adsorption systems exhibit different ground state configurations depending on the adatoms, while the controlled perpendicular magnetic anisotropy has also been achieved. Notably, the Mn/FGT system can maintain the out-of-plane magnetic orientation with a changing amplitude of MCA energy up to 3.057 erg/cm2 as the external strain varies from −4% to 1%. In contrast, the Fe/FGT structure undergoes spin reorientation from in-plane to out-of-plan magnetization with a distinct modification behavior of MCA. We elucidate that the underlying atomistic mechanism mainly arises from the alteration of Fe-derived 3d-orbital states in response to the strain effect, leading to competitive changes in the different coupling states. These findings can not only provide useful guidance to optimize two-dimensional magnets for fundamental research but also reveal the promising potential of TMs/FGT materials for the development of ultra-low energy spintronic devices.

Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2

As a promising van der Waals (vdW) magnet, Fe3GeTe2 (FGT) has an inversion symmetry in structure, thus nominally prohibiting the generation of the Dzyaloshinskii–Moriya interaction and the resultant topological Hall effect (THE), which is manifested as hump-like features in transport. By virtue of doping, like the method of fabricating heterostructures, the crystal inversion symmetry of FGT could be broken artificially; therefore, humps of Hall resistance due to the THE are expected. However, alternative interpretations indicate inhomogeneity-induced multi-channel anomalous Hall effect (AHE) could also give rise to these humps. Here, besides the magnetic properties modified by Co doping, we report emergent humps in (Fe0.74Co0.26)3GeTe2 (FCGT) nanodevices. By scanning minor loops, partial anomalous Hall loops exceeding the full loop cannot be attributed to the THE, while it is in line with the multi-channel AHE scenario. These channels likely develop as a result of the Co atoms in FGT being randomly distributed, leading to multiple spatially separated magnetic regions with distinct coercive fields and magnetizations. By combing these AHE channels, the hump features in FCGT are effectively reproduced. Our work implies that the underlying multi-channel transport could also facilitate the development of versatile nanodevices utilizing the doped vdW ferromagnets.