Novel CPU cache architecture based on two-dimensional MTJ device with ferromagnetic Fe3GeTe2

Abstract

With the development of Artificial Intelligence (AI) in recent years, the fields of computer, biology, medicine, and aerospace have demanded higher requirements for the processing and storage of information. In this paper, a novel Magnetic Tunnel Junction (MTJ) based Spin-Orbital Torque Magnetic Random Access Memory (SOT-MRAM) composed of Fe3GeTe2 (FGT) is employed as a storage medium in the computer architecture. On the basis of the analysis of the fundamentals, model configuration, characteristics and performance advantages of the FGT based SOT device, a hybrid storage (L1, L2, Last Level Cache) is constructed, with FGT-SOT-MRAM, conventional SOT-MRAM and STT-MRAM replacing the original static random access memory (SRAM) in the novel triple-level CPU cache architecture. This can override the increasing leakage problem of SRAM, while opening up the application of two-dimensional van der Waals ferromagnets in computer systems at the L1 cache level. Meanwhile, an innovative cache optimization scheme is put forward for magnetic memory to better match the performance of FGT-SOT-MRAM to CPU. The simulation results demonstrate that the FGT-based MRAM can achieve up to 38.03% IPC optimization and 53.41% power optimization in the CPU cache system in contrast to the conventional ones.