This letter presents a novel short-circuit protection (SCP) for medium-voltage (MV) SiC MOSFETs, that utilizes the turn-on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dv/dt</i> of SiC MOSFET within a predetermined interval to monitor SC faults. Unlike conventional methods that detect the fault current/voltage magnitude, proposed turn-on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dv/dt</i> detection and protection timing sequence enable a very fast fault response time as well as enhance the noise immunity to fast switching of MV SiC MOSFETs. Furthermore, the proposed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dv/dt</i> sensing based SCP can be integrated with DESAT circuit to provide over-current (OC) protection (OCP) under the fault-under-load (FUL) condition. The proposed integrated implementation can respond to SC faults without the blanking-time limitation and eliminates the need for the extra high-voltage sensing capacitor to lower cost. Experimental results on 3.3-kV SiC MOSFETs are provided to validate the effectiveness of proposed SCP method.