AbstractInverted perovskite solar cells (PSCs) have attracted considerable attention due to their distinct advantages, including minimal hysteresis, cost‐effectiveness, and suitability for tandem applications. Nevertheless, the solution processing and the low formation energy of perovskites inevitably lead to numerous defects formed at both the bulk and interfaces of the perovskite layer. These defects can act as non‐radiative recombination centers, significantly impeding carrier transport and posing a substantial obstacle to stability and further enhancing power conversion efficiency (PCE). This review delves into a detailed discussion of the nature and origin of defects and the characterization techniques employed for defect identification. Furthermore, it systematically summarizes methods for defect detection and approaches for passivating interface and bulk defects within the perovskite film in inverted PSCs. Finally, this review offers a perspective on employing upscaling defect passivation engineering for perovskite modules. It is hoped this review provides insights into defect passivation in inverted PSCs and solar modules.
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