Fast Switching Speed Research Articles

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

AbstractIn the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001> orientation using tight-binding models have been analyzed. The fast algorithm based on the tight-binding model for Trigate Silicon nanowires yielded a remarkable ION/IOFF ratio of 1.49 × 1010 and leakage current (ILeak or IOFF) of 3.7 × 10−17μA. Furthermore, a maximum conduction band energy level (Ecmax) of −0.003 eV and a Subthreshold Slope (SS) of 120 mV has been obtained for a channel length of 15 nm. At an energy level of 3 eV, a high Transmission coefficient, T(ε), of 4 has been attained using the E-k dispersion method. This analysis also involved the calculation of three ∆ valleys pertinent to the channel’s effectiveness in <001> orientation, with proximity nearer to 1 m0. The Schrodinger-Poisson equation has been analyzed with the Ballistic transport along the [001] z-direction in channel potential. A comparative assessment has been also performed between the lateral dimensions of rectangular nanowires with equal energy levels, utilizing both the tight-binding model and Density Functional Theory (DFT) techniques. In some high-frequency applications, a high transmission coefficient is beneficial to maximize the amount of energy or information that gets transmitted. Reducing leakage current would offer a technological pathway for performance improvement of high-frequency applications. The high ON-current (ION) has been obtained through the DFT approach between source and drain terminals is particularly desirable for applications demanding for fast switching speeds and high-performance computing. The strengths of both methods in hybrid approaches is a common strategy to achieve simulations that are both accurate and efficient. Notably, the nanowires subjected to hydrostatic strain, exhibiting enhanced mobility and exceptional electrostatic integrity, emerged as pivotal components for forthcoming technology nodes. This research augments the potential feasibility of strain-based Si nanowires, even at the 3 nm scale, in subsequent technological advancements.

Pd-Catalysed Direct Arylation of Distyrylbenzene: Strong Dual-state Fluorescence and Electrochromism.

Distyrylbenzenes (DSBs) are well-known for their strong multicolour fluorescence. Fluorescence tuning of DSB via further functionalization/arylation, on the other hand, is uncommon. This paper reports a Pd-catalysed direct arylation approach for introducing different aryl groups onto fluorobenzene-containing DSB moiety (7) in high yields (67-72 %). The versatile methodology allows the substitution of neutral [tolyl (1)], electron-deficient [p-formyl benzene (2), p-acetyl benzene (3), p-nitrobenzene (4)] and electron-rich [carbazole (5), triphenylamine (6)] aryl groups. The electron-deficient aryls render mono-substitution, while the electron-rich counterparts promote di-substitution. The compounds (1-6) show blue, green, and yellow fluorescence in both the solution and solid states; the fluorescence quantum yields reach >98 % and the peak maxima span from 425 to 560 nm. The mono-carbazole DSB (5) exhibit white light emission (WLM) in polar solvents (acetone, DMF, CH3CN, DMSO and NMP) with very high fluorescence quantum yields (φf) of 60-80 %. For WLM, such high efficiency (φf) is somewhat uncommon. Moreover, visible-to-NIR reversible electrochromism is demonstrated by the TPA-integrated DSB (6). The colour of 6 changes from pristine light yellow to orange, and the absorption maxima shifts from 372 to 1500 nm when a positive potential of 1.0 V vs Ag/Ag+ is applied. Moreover, the system shows high colouration efficiency in the NIR region with fast switching speeds for colouration and decolouration as fast as 0.98 s and 1.05 s.

Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications

In this paper, a SiGe/Si heterojunction inductive line tunneling tunnel field-effect transistor with source Schottky contact (SC HJLT-iTFET) is proposed and investigated by the Sentaurus Technology Computer Aided Design (TCAD) simulator. By utilizing an appropriate source Schottky metal, the need for multiple ion implantation and annealing steps required for traditional P–I–N TFETs can be avoided, and the problems of self-alignment and random dopant fluctuations (RDF) during ion implantation can be solved. A high ON-state current (I ON) is obtained as fully overlapping the source and gate by line tunneling mechanism dominated, the appropriate Si1−x Ge x mole fraction material in the source region and high-k gate dielectric employed can further improve I ON. The incorporation of the block layer effectively decreases the lateral electric field at the drain end to reduce the OFF-state current (I OFF). Furthermore, the proposed charge enhancement layer (CEL) on the SiGe channel can suppress the Fermi level pinning effect (FLP) and enhance the charge of the source region. Based on the feasibility of the practical fabrication process, and the rigorous simulations indicate that the device has an SSavg of 19.8 mV/dec and SSmin of 6.8 mV/dec at V D = 0.2 V, I ON of 2.27 × 10−6 A μ m−1, and an I ON/I OFF ratio of 1.02 × 1010, with extremely fast switching speed. These features make the device suitable for future ultra-low power applications on the internet of things, artificial intelligence, and related fields.

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge4Sb6Te7), to achieve record-low power density ≈ 5 MW/cm2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 108 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge4Sb6Te7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology

Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios (105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${10}^{5}$$\\end{document}) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 μm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\mu m}^{2}$$\\end{document}.

Optical sensing and computing memory devices using nanostructured WO3

This paper presents microfabrication, characterization, optical sensing and memory testing using nanostructured tungsten trioxide (WO3). Different experiments were performed to realize the integrated sensing and computing memory (ISCM) functionality on the same device. These ISCM devices were fabricated using standard wafer-scale microfabrication processes on 2-inch silicon (Si) substrate. First, the devices were tested to detect the broad wavelength spectrum ranging ultraviolet (UV) to near infrared (NIR). These photosensing devices were shown repeatable, reproducible and reliable results with fast switching speed (rise time (0.05 s)/fall time (0.08 s)) at 880 nm. Further, the memory functionality was realized using the electrical and optical stimuli at room temperature. The optically stimulated device has shown higher sensitivity for 880 nm and mimics the human brain's functional characteristics. The developed ISCM devices have shown enhanced performance parameters like paired pulse facilitation (PPF) index 171.2 %, retention time 300 s, resistance switching ratio 1.5 × 102 over electrical stimulation. The tested devices are able to demonstrate ISCM features and the developed process pathway for mass production.

High Speed Dual‐Band Photodetector for Dual‐Channel Optical Communications in Wavelength Division Multiplexing and Security Enhancement

AbstractThe forthcoming wireless networks must integrate to a high density of end‐user devices while ensuring a superior quality of service. It is imperative to devise solutions that reduce the density of wireless access points and associated costs, while simultaneously ensuring security and privacy throughout propagation. Herein, a novel dual‐band photodetector with high selective responsivities in distinct visible and near‐infrared (NIR) band is developed as an optical signal receiver. The receiver has an unprecedented fast switch speed > 500 kHz between different operation modes. Leveraging this fast switch speed, a high‐speed Multiple‐Input‐Single‐Output (MISO) system is developed, fusing spectrum resources from visible to infrared bands. The system achieves a data rate of 600 Kbps in the visible channel and 500 Kbps in the NIR channel, with a sum rate of 1.1 Mbps. This is the highest single‐channel data rate and sum rate among reported dual‐band photodetectors. Additionally, two previously overlooked mechanisms, the Subtraction and Addition modes, are studied in detail. The four operation modes are developed to establish a novel physical encryption method in terms of arithmetic relation. The dual‐channel coupled link can support a data rate of 200 Kbps, significantly enhancing communication security.

Precise weight tuning in quantum dot-based resistive-switching memory for neuromorphic systems.

In this study, nonvolatile bipolar resistive switching and synaptic emulation behaviors are performed in an InGaP quantum dots (QDs)/HfO2-based memristor device. First, the physical and chemical properties of InGaP QDs are investigated by high-resolution transmission electron microscopy and spectrophotometric analysis. Through comparative experiments, it is proven that the HfO2 layer improves the variations in resistive switching characteristics. Additionally, the Al/QDs/HfO2/ITO device exhibits reversible switching performances with excellent data retention. Fast switching speeds in the order of nanoseconds were confirmed, which could be explained by trapping/detrapping and quantum tunneling effects by the trap provided by nanoscale InGaP QDs. In addition, the operating voltage is decreased when the device is exposed to ultraviolet light for low-power switching. Biological synapse features such as spike-timing-dependent plasticity are emulated for neuromorphic systems. Finally, the incremental step pulse using proven algorithm method enabled the implementation of four-bit states (16 states), markedly enhancing the inference precision of neuromorphic systems.

Affective computing for human-machine interaction via a bionic organic memristor exhibiting selective in situ activation.

Affective computing, representing the forefront of human-machine interaction, is confronted with the pressing challenges of the execution speed and power consumption brought by the transmission of massive data. Herein, we introduce a bionic organic memristor inspired by the ligand-gated ion channels (LGICs) to facilitate near-sensor affective computing based on electroencephalography (EEG). It is constructed from a coordination polymer comprising Co ions and benzothiadiazole (Co-BTA), featuring multiple switching sites for redox reactions. Through advanced characterizations and theoretical calculations, we demonstrate that when subjected to a bias voltage, only the site where Co ions bind with N atoms from four BTA molecules becomes activated, while others remain inert. This remarkable phenomenon resembles the selective in situ activation of LGICs on the postsynaptic membrane for neural signal regulation. Consequently, the bionic organic memristor network exhibits outstanding reliability (200 000 cycles), exceptional integration level (210 pixels), ultra-low energy consumption (4.05 pJ), and fast switching speed (94 ns). Moreover, the built near-sensor system based on it achieves emotion recognition with an accuracy exceeding 95%. This research substantively adds to the ambition of realizing empathetic interaction and presents an appealing bionic approach for the development of novel electronic devices.

Solid State Pulsed Power Modulator With High Repetition Rate and Short Pulse Width for High-Speed Pulsed Lasers

This paper proposes a modular pulsed power modulator (PPM) with a short pulse width and high repetition rate for pulsed lasers. The presented PPM is based on the modular structure to use semiconductor switches with low voltage ratings since these switches have fast switching speed which is an essential requirement to generate short pulses. In addition, to make a short gate signal which is also needed to generate short pulses, a gate driver circuit which applies positive and negative voltages asymmetrically is proposed. Moreover, a heatsink structure to minimize the parasitic capacitances is presented for the high repetition rate. Furthermore, a DC-DC converter for the modular PPM is developed, which connects transformers in parallel at the primary side to achieve voltage balance without any compensation circuit. Experimental results from a 5 kV PPM with the pulse width below 20 ns and repetition rate of 1 MHz are presented to verify the proposed works.

Strain Analysis of Vacuum Interrupter Bellows

Abstract The vacuum interrupter (VI) is the main part of the vacuum circuit breaker (VCB), and an essential component of its design is the bellows. In future high-voltage VCBs, faster switching speeds will lead to higher dynamic impact-type loads, and the oscillation of the bellows after the contact opening and closing could shorten the mechanical life of the bellows. This article provides a 1D computer-aided engineering (CAE) analysis of the strain of the bellows oscillation in a VI caused by the axial load from the impact of the contact. A formula for the oscillation is derived using the longitudinal vibration response of a mass-spring 1D model, calculated by the convolution integral of the input and the impulse response function of the vibration modes. The proposed 1D analysis was verified and shown to be effective under four different experimental conditions. This article also provides a 1D CAE analysis of the mechanical life of the bellows. These 1D analyses estimate the effect of stress reducing countermeasures on the bellows' lifetime without increasing its size.

Influence of the TiN diffusion barrier on the leakage current and ferroelectricity in an Al-doped HfOx ferroelectric memristor and its application to neuromorphic computing.

The HfOx-based ferroelectric memristor is in the spotlight due to its complementary metal-oxide-semiconductor compatibility and scaling compared to existing perovskite-based ferroelectric memory. However, ferroelectric properties vary depending on the coefficient of thermal expansion of the top electrode, which is caused by strain engineering. When tungsten (W) with a small coefficient of thermal expansion is used as an electrode, the ferroelectric properties are improved, although the reliability is poor due to the diffusion of W atoms. Here, TiN can be used to prevent the diffusion of W. This metal nitride successfully suppresses the leakage current and induces a larger remanent polarization of 19.7 μC cm-2, a smaller coercive voltage of 9.26 V, and a faster switching speed. W/TiN/HAO/n+ Si can also exhibit multi-level characteristics and achieve a 10% read margin in 320 × 320 arrays. Ferroelectrics can also be applied to neuromorphic computing by imitating synaptic properties such as potentiation, depression, paired-pulse facilitation, and excitatory postsynaptic current. Using short-term plasticity, successful implementation in reservoir computing is also realized, achieving 95% classification accuracy. This paper shows promise for the use of memristors in artificial neural networks.

Review of: "Reproduction (electrical nano memories) by the method combined nanolithography (۱۲ V), Fast switching speed (۱ microsecond)"

Review of: "Reproduction (electrical nano memories) by the method combined nanolithography (۱۲ V), Fast switching speed (۱ microsecond)"

Study of Ultra-Broadband Synthesizer of Fast Indirect Type in a 0.5–18 GHz Range for SIGINT System

In the present study, a new structure (0.5–18 GHz) with excellent phase noise characteristics and a fast switching speed is proposed. Ultra-wideband synthesizers with low phase noises and less spurious signals have been developed to be used as local oscillators and for built-in test (BIT) functions in the field of electronic warfare systems (EW), in which synthesizers are installed at the front-end of devices; this is accomplished by applying an SMT process using a packaged-type device. This paper compares the advantages and disadvantages of PLVCO (old) and DDS reference sources (new) based on two types of frequency synthesizers. At this time, different frequencies can be output from the two ports by different FPGA coding of the internal frequency plan according to the operating frequency. The main RF line will be made a dielectric substrate, RO4350, with a relative dielectric constant of 3.38 and a dielectric thickness of 0.508 mm. In the ultra-broadband synthesizer module, the phase noise of the DDS output (1.25 GHz) was −131 dBc/Hz at 10 KHz offset. The phase noise in the 18 GHz output is expected to be −105.9 dBc/Hz at 1 KHz offset. In particular, by proposing a structure for obtaining a wideband frequency using a single source (DDS), the structure secures reliability from the point of view of a system operating for a long time by implementing a similar circuit within a predictable range.

Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention.

Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration-based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high-performance memristor based on the structure of ITO/Ni single-atoms (NiSAs/N-C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well-distributed trapping sites , small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100ns, ultralong retention capability of 106 s, a low set voltage (Vset ) of ≈0.7V, a substantial ON/OFF ration of 103 , and low spatial variation in cycle-to-cycle (500 cycles) and device-to-device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic-based combinational memristor array to realize the one-bit full adder is further implemented.

Mode-Independent Switching Stabilizing Control for Continuous-Time Linear Markovian Switching Systems

We present a switching control approach to studying the stabilization problem of linear Markovian switching systems. The switching signal in feedback loop is generated independently of the underlying switching signal. Moreover, the closed-loop switching signal can be accelerated to show the influence of its stationary distribution. As a result, the transition matrix of the closed-loop system approximates such an operator semigroup that its infinitesimal generator exactly is the combination of the closed-loop subsystem matrices with respect to this stationary distribution. Therefore, endowing this infinitesimal generator with certain stable structure may allow us to make the closed-loop system exponentially stable at the expense of fast switching speed.

2D router chip design, analysis, and simulation for effective communication

<p class="Correspondencedetails"><span lang="EN-US">The router is a network device that is used to connect subnetwork and packet-switched networking by directing the data packets to the intended IP addresses. It succeeds the traffic between different systems and allows several devices to share the internet connection. The router is applicable for the effective commutation in system on chip (SoC) modules for network on chip (NoC) communication. The research paper emphasizes the design of the two dimensional (2D) router hardware chip in the Xilinx integrated system environment (ISE) 14.7 software and further logic verification using the data packets transmitted from all input/output ports. The design evaluation is done based on the pre-synthesis device utilization summary relating to different field programmable gate array (FPGA) boards such as Spartan-3E (XC3S500E), Spartan-6 (XC6SLX45), Virtex-4 (XC4VFX12), Virtex-5 (XC5VSX50T), and Virtex-7 (XC7VX550T). The 64-bit data logic is verified on the different ports of the router configuration in the Xilinx and Modelsim waveform simulator. The Virtex-7 has proven the fast-switching speed and optimal hardware parameters in comparison to other FPGAs.</span></p>

Self‐assembled vapor-transport-deposited SnS nanoflake-based memory devices with synaptic learning properties

The most salient features of resistive switching (RS) devices are low energy consumption, fast switching speed, and high-density integration, which render them promising candidates for realizing non-volatile memory and artificial synaptic devices. However, the growth of functional switching layers for RS devices needs innovative deposition techniques. Herein, we utilize a high-throughput vapor-transport-deposition (VTD) technique for synthesizing self-assembled tin-sulfide (SnS) nanoflakes, which are then used as a switching layer to fabricate an RS device. First principle calculations are conducted to understand the optoelectronic properties of SnS by employing density functional theory. The proposed Ag/SnS/Pt memory device exhibits substantial merits, including low-switching voltages (VSET: 0.22 V and VRESET: −0.20 V), suitable ON/OFF ratio (∼259), excellent endurance (106), and extended memory retention (106 s) characteristics. In addition, RS stochasticity is modeled using statistical time-series analysis via Holt’s exponential smoothing. Interestingly, the device can emulate multiple synaptic functionalities, including potentiation, depression, paired-pulse facilitation, paired-pulse depression, excitatory postsynaptic current, inhibitory postsynaptic current, and advanced spike-timing dependent plasticity rules. Moreover, the proposed synaptic device can detect the edge of images by utilizing a convolutional neural network. The unique and efficient VTD-SnS-based device will be a potential candidate for high-density non-volatile memory and neuromorphic computing applications.

High‐Performance Memristors Based on Few‐Layer Manganese Phosphorus Trisulfide for Neuromorphic Computing

AbstractWhile transition‐metal thiophosphate (MPX3) materials have been a subject of extensive research in recent years, experimental studies on MPX3‐based memristors are still in their early stages, with device performance being less than ideal. Here, the successful fabrication of high‐yield, high‐performance, and uniform memristors are demonstrated to possess desired characteristics for neuromorphic computing using a single‐crystalline few‐layered manganese phosphorus trisulfide (MnPS3) as a resistive switching medium. The Ti/MnPS3/Au memristor exhibits small switching voltage (<1 V), long memory retention (104 s), fast switching speed (≈20 ns), high On/Off ratio (nearly two orders of magnitude), and simultaneously achieves emulation of synaptic weight plasticity. The microscopic investigation of the structural and chemical characteristics of the few‐layer MnPS3 reveals the presence of structural defects and residual Ti throughout the stacked layer following the application of voltage, which contributes to the uniformity of switching with a low set voltage. With highly linear and symmetric analog weight updates coupled with the capability of accurate decimal arithmetic operations, a high accuracy of 95.15% in supervised learning using the MNIST handwritten recognition dataset is achieved in the artificial neural network. Furthermore, convolutional image processing can be implemented using hardware multiply‐and‐accumulate operation in an experimental memristor crossbar array.

Synchronous micromechanically resonant programmable photonic circuits

Programmable photonic integrated circuits (PICs) are emerging as powerful tools for control of light, with applications in quantum information processing, optical range finding, and artificial intelligence. Low-power implementations of these PICs involve micromechanical structures driven capacitively or piezoelectrically but are often limited in modulation bandwidth by mechanical resonances and high operating voltages. Here we introduce a synchronous, micromechanically resonant design architecture for programmable PICs and a proof-of-principle 1×8 photonic switch using piezoelectric optical phase shifters. Our design purposefully exploits high-frequency mechanical resonances and optically broadband components for larger modulation responses on the order of the mechanical quality factor Qm while maintaining fast switching speeds. We experimentally show switching cycles of all 8 channels spaced by approximately 11 ns and operating at 4.6 dB average modulation enhancement. Future advances in micromechanical devices with high Qm, which can exceed 10000, should enable an improved series of low-voltage and high-speed programmable PICs.