Photonic and optoelectronic devices may offer the opportunity to realize efficient signal processing at speeds higher than in conventional electronic devices. Switches form the building blocks for circuits, and fast photonic switches have been realized1,2,3,4,5,6. Recently, a proof of principle demonstration of exciton optoelectronic devices was reported7,8. The potential advantages of excitonic devices include high operation and interconnection speed, small dimensions and the opportunity to combine many elements into integrated circuits. Here, we demonstrate experimental proof of principle for the operation of excitonic switching devices at temperatures around 100 K. The devices are based on an AlAs/GaAs coupled quantum well structure and include the exciton optoelectronic transistor (EXOT), the excitonic bridge modulator (EXBM), and the excitonic pinch-off modulator (EXPOM). A two orders of magnitude increase in the operation temperature compared to earlier devices (1.5 K; refs 7,8) is achieved. Exciton optoelectronic devices have been demonstrated previously at an operating temperature of 1.5 K. Here, experimental proof-of-principle for excitonic switching devices at approximately 100 K is demonstrated. Excitonic devices promise high operation speed and optoelectronic integration in compact dimensions.