Abstract
We propose to use 1.55 µm intersubband transitions as a key mechanism for novel photonic devices such as fast photonic switches which are applicable to current optical communication systems. The calculation of carrier relaxation times shows a few picosecond switching time for 1.55 µm intersubband transitions. The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied to realize 1.55 µm intersubband transitions.
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