Failure Analysis Of Semiconductor Devices Research Articles

Terahertz near-field imaging of buried structures.

We report a characterization of the spatial resolution of terahertz (THz) apertureless near-field imaging of metal lines deeply buried beneath a silicon dioxide layer. We find a good resolution for edge contrast, even in the case where the capping layer is considerably thicker than the tip radius. We find that contrast and resolution depend on demodulation frequency, thickness of the capping layer, and radius of the tip. Furthermore, we observe a distinct dependence of the contrast on the direction of the incoming radiation, in both experiments and simulations. Characterization of buried features can be a valuable tool in non-contact failure analysis of semiconductor devices.

Scanning Nitrogen Vacancy Magnetometry: A Quantum Technology for Device Failure Analysis

Abstract This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.

Sensitivity improvement of ultrasonic beam induced resistance change (SOBIRCH) method with ultrasound resonance inside mold resin

In some cases of the failure analysis of semiconductor devices, package state analysis without decapsulation of mold resin is required. The ultrasonic beam induced resistance change (SOBIRCH) method has been proposed as an alternative without need for the decapsulation. The sensitivity of SOBIRCH depends on the quality of the equipment of its measurement system. After a system is fixed, its sensitivity cannot be upgraded easily. However, if it is possible to improve sensitivity even after the system is fixed, it will be easier to localize faults. By means of numerical analysis, recent research suggested that ultrasound resonance inside the mold resin can improve the sensitivity of SOBIRCH significantly. Our research reported here experimentally verified the ultrasound resonance inside the mold resin improved the sensitivity of SOBIRCH by appropriate tuning of the ultrasound frequency to thinned mold resin. Additionally, this research demonstrated that a fault in a practical device could be more clearly observed by using the expected effect of ultrasound resonance in SOBIRCH observation.

Scanning Probe Microscopy Applications in Failure Analysis of Semiconductor Devices

Abstract Scanning probe microscopy (SPM) is widely used for fault isolation as well as diagnosing leakage current, detecting open circuits, and characterizing doping related defects. In this article, the author presents two SPM applications that are fairly uncommon but no less important in the scope of failure analysis. The first case involves the discovery of nano-steps on the surface of high-voltage NFETs, a phenomenon associated with stress-induced crystalline shift along the (111) silicon plane. In the second case, the author uses an AFM probe in the conductive mode to correlate tunneling current distribution with hot spots in high-k gate oxide films, which is shown to be a better indicator of oxide quality than rms surface roughness.

IEEE-CPMT Special Topic: Advances in Tools/Techniques for Microelectronic Package Failure Analysis

Recent advances in microelectronic package technologies such as 2.5-D, 3-D, and wafer-level packaging have delivered rapid breakthroughs in the semiconductor industry by providing better device performance, power efficiency, and cost reduction. Reduction of feature sizes for these technologies has also required advancements in tools and techniques necessary to observe and investigate failures seen in these complex devices. The complexity of these devices has challenged researchers to modify conventional tools and invent smart methods for enhanced fault isolation (FI) and failure analysis (FA) capabilities. This Special Topics Section is a collection of various fault isolation and failure analysis advances made by research groups active in this area. Dissemination of all this research in one Special Topics Issue will greatly benefit the researchers working in the area of failure analysis of semiconductor devices. We capture the highlights of this Special Topic below.

Local thickness and composition analysis of TEM lamellae in the FIB

High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB–SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and discuss its application to the failure analysis of semiconductor devices. The local thickness in different device regions is accurately measured based on the X-ray emission excited by the electron beam in the FIB–SEM. Examples using this method to guide FIB–SEM preparation of high quality lamellae and to characterise redeposition are shown for Si and III–V semiconductor devices.

Energy-Filtered Transmission Electron Microscopy (EFTEM) of Semiconductor Devices

Abstract Energy-filtered transmission electron microscopy (EFTEM) is an imaging technique that uses inelastically scattered electrons and energy filters to produce high-quality images and elemental maps. This article reviews the measurement physics of EFTEM, compares and contrasts it with other imaging and chemical analysis techniques, and presents several application examples to demonstrate its use in semiconductor device failure analysis.

Emission Microscopy: A Historical Review

Abstract This article discusses some of the early uses of emission microscopy in semiconductor device failure analysis and the challenges that were overcome to make it the invaluable tool it is today. One of the impediments early on was a misconception that silicon cannot emit light when, in fact, it has several light emission mechanisms that have proven useful in electron microscopy. One such mechanism, avalanche luminescence, occurs in junctions during reverse breakdown and is useful for resolving low breakdown voltage and problems with ESD protection circuits. Other light emission mechanisms discussed in the article include forward bias emission, MOS transistor saturation, and dielectric luminescence, which is used to examine oxide test structures and detect oxide defects.

Failure Analysis Using Voltage Contrast and Ebic

AbstractAs ULSI device critical dimensions continue to shrink to submicron sizes, electron microscopy techniques such as electron beam induced current (EBIC) and voltage contrast are finding more applications towards pinpointing failure sites for subsequent cross sectioning or deprocessing. In addition to the traditional use of EBIC for junction delineation, EBIC has been applied to locate leakage sites in capacitor structures and silicon-on-insulator (SOI) devices as well. Similarly, voltage contrast has been applied to identify single or multiple opens in via chains which consist of thousands of vias. In addition to a brief revisit of the basic principles of EBIC and voltage contrast, focus will be placed on the application of EBIC and voltage contrast in failure analysis of semiconductor devices. Examples of using voltage contrast combined with precision cross section focused ion beam (XFIB) for identifying the failure mechanism of 0.8μm vias will be presented. Also, the use of EBIC for identifying leakage sites in SOI and bipolar devices and subsequent FIB/scanning electron microscopy (SEM) analysis will be presented.

Demonstration of a focused ion-beam cross-sectioning technique for ultrastructural examination of resin-dentin interfaces

Objectives. Focused ion-beam (FIB) etching, commonly used as a cross-sectioning technique for failure analysis of semiconductor devices, has recently been applied to biological tissues to expose their ultrastructure for examination. It was the aim of this investigation to determine the practical utility of FIB to cross-section resin-dentin interfaces in order to morphologically evaluate the completeness of resin penetration into the exposed collagen scaffold at the resin-dentin bond interface. Methods. Two representative commercially available dentin adhesive systems were bonded to mid-coronal dentin. After appropriate fixation and dehydration of the resin-bonded dentin samples, a scanned focused ion-beam of a few tens of nano-meters in diameter was used to cross-section the resin-dentin interface. Examination of the interfacial ultrastructure was accomplished using a field-emission SEM. Results. Results indicate possible artifact production at the cross-sectioned interface, hiding its actual ultrastructure, probably due to a heat-effect with possible recrystallization. Further studies of FIB are needed to optimize its usefulness for resin-dentin interface examinations and other biological tissue applications. Significance. Complete resin saturation of the demineralized dentin surface-layer has been claimed to be the key factor for a long-lasting resin-dentin bond. A “clean” artifact-free micro-cross-sectioning technique may provide indisputable ultra-structural information about the depth of resin penetration into the demineralized zone. Such a test would be useful in the development of dentin adhesive systems.

The uses of scanning electron microscopy for studying semiconductor devices†

The continuing increase in complexity and the reductions in the dimensions of semiconductor devices have created the need for ever improving techniques to analyse these devices. Over the past two decades scanning electron microscopy (SEM) and its associated techniques have proved essential for the study and failure analysis of semiconductor devices. This paper describes the more commonly used techniques, including basic imaging modes, voltage contrast, electron beam induced currents and microanalysis and offers recent practical examples where the techniques have solved problems within the telecommunications industry.

光による半導体の動作・故障解析

光による半導体の動作・故障解析

Detection of metallization failures by photo-emission and electron-beam testing

Photo-emission and electron-beam microscopy have been used to detect metallization failures in very large scale integrated (VLSI ) circuits associated with current leakage. These techniques, used as complementary tools can help reduce the debug time for failure analysis of semiconductor devices.